ES3D R7G Equivalent & Substitute Parts

Part Overview

The ES3D R7G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 3 A average rectified current in a DO-214AB (SMC) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement. The ES3D R7G operates across a junction temperature range of -55°C to 150°C and complies with RoHS3 and REACH standards.

Substiute Parts

ES3D R7G
Taiwan Semiconductor CorporationIn Stock: 1051ES3D R7G Datasheet
ES3D R7G
Current Part
ES3DH
Taiwan Semiconductor CorporationIn Stock: 3802ES3DH Datasheet
ES3DH
Parametric Equivalent
CGRC503-G
Comchip TechnologyIn Stock: 793CGRC503-G Datasheet
CGRC503-G
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CSFC303-G
Comchip TechnologyIn Stock: 757CSFC303-G Datasheet
CSFC303-G
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ER3D-TP
Micro Commercial CoIn Stock: 16893ER3D-TP Datasheet
ER3D-TP
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ES3D-13-F
Diodes IncorporatedIn Stock: 45290ES3D-13-F Datasheet
ES3D-13-F
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ES3DB-13-F
Diodes IncorporatedIn Stock: 32160ES3DB-13-F Datasheet
ES3DB-13-F
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MURS320-13-F
Diodes IncorporatedIn Stock: 7725MURS320-13-F Datasheet
MURS320-13-F
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MURS320-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 2777MURS320-E3/57T Datasheet
MURS320-E3/57T
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MURS320-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 3620MURS320-E3/9AT Datasheet
MURS320-E3/9AT
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MURS320-M3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1014MURS320-M3/57T Datasheet
MURS320-M3/57T
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MURS320-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 995MURS320-M3/9AT Datasheet
MURS320-M3/9AT
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MURS320HE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 875MURS320HE3_A/H Datasheet
MURS320HE3_A/H
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MURS320HE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 923MURS320HE3_A/I Datasheet
MURS320HE3_A/I
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RS3D-13-F
Diodes IncorporatedIn Stock: 5268RS3D-13-F Datasheet
RS3D-13-F
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RS3DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 764RS3DHE3_A/H Datasheet
RS3DHE3_A/H
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RS3DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1242RS3DHE3_A/I Datasheet
RS3DHE3_A/I
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S3D-13-F
Diodes IncorporatedIn Stock: 295114S3D-13-F Datasheet
S3D-13-F
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S3D-TP
Micro Commercial CoIn Stock: 24448S3D-TP Datasheet
S3D-TP
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S3DB-13-F
Diodes IncorporatedIn Stock: 70205S3DB-13-F Datasheet
S3DB-13-F
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S3DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 873S3DHE3_A/H Datasheet
S3DHE3_A/H
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S3DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 14203S3DHE3_A/I Datasheet
S3DHE3_A/I
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S5DC-13-F
Diodes IncorporatedIn Stock: 7999S5DC-13-F Datasheet
S5DC-13-F
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S5DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 965S5DHE3_A/H Datasheet
S5DHE3_A/H
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S5DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 873S5DHE3_A/I Datasheet
S5DHE3_A/I
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S5DL-TP
Micro Commercial CoIn Stock: 3957S5DL-TP Datasheet
S5DL-TP
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SMLJ60S2-TP
Micro Commercial CoIn Stock: 12915SMLJ60S2-TP Datasheet
SMLJ60S2-TP
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STTH302S
STMicroelectronicsIn Stock: 25236STTH302S Datasheet
STTH302S
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STTH3R02S
STMicroelectronicsIn Stock: 10149STTH3R02S Datasheet
STTH3R02S
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STTH4R02S
STMicroelectronicsIn Stock: 17612STTH4R02S Datasheet
STTH4R02S
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STTH4R02SY
STMicroelectronicsIn Stock: 3203STTH4R02SY Datasheet
STTH4R02SY
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U3D-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 12367U3D-E3/57T Datasheet
U3D-E3/57T
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U3D-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 2918U3D-E3/9AT Datasheet
U3D-E3/9AT
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ER3D_R1_00001
Panjit International Inc.In Stock: 2896ER3D_R1_00001 Datasheet
ER3D_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 3 A mV
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V
Capacitance @ Vr, F 45 pF @ 4V, 1MHz
Package / Case DO-214AB, SMC
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the ES3D R7G are classified based on strict electrical and mechanical parameter matching:

Parametric Equivalent (Direct Replacement): Parts that match all critical electrical specifications (200 V reverse voltage, 3 A average rectified current, fast recovery ≤ 500ns, 35 ns reverse recovery time) and package type (DO-214AB SMC). These parts are interchangeable without circuit modification.

Similar Parts (Functional Equivalents): Parts that maintain the same voltage and current ratings with DO-214AB SMC packaging but may differ in forward voltage, reverse recovery time, reverse leakage current, or operating temperature range. These parts function in the same application but require verification of specific parameter tolerances.

Key Parameters for Substitution:

  • Voltage - DC Reverse (Vr) (Max): 200 V (mandatory match)
  • Current - Average Rectified (Io): 3 A (mandatory match)
  • Package / Case: DO-214AB, SMC (mandatory match for surface mount compatibility)
  • Speed: Fast Recovery ≤ 500ns, > 200mA (Io) (preferred for switching applications)
  • Reverse Recovery Time (trr): 35 ns (preferred specification)
  • Operating Temperature Range: -55°C to 150°C minimum (application dependent)

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [mV] Speed trr [ns] Ir @ Vr [µA] Package Tj Range [°C] Status
ES3D R7G Taiwan Semiconductor Corporation 200 3 950 @ 3A Fast Recovery ≤ 500ns 35 10 @ 200V DO-214AB, SMC -55 to 150 Discontinued
ES3DH Taiwan Semiconductor Corporation 200 3 950 @ 3A Fast Recovery ≤ 500ns 35 10 @ 200V DO-214AB, SMC -55 to 150 Active
CSFC303-G Comchip Technology 200 3 950 @ 3A Fast Recovery ≤ 500ns 35 5 @ 200V DO-214AB, SMC -55 to 150 Active
ER3D-TP Micro Commercial Co 200 3 950 @ 3A Fast Recovery ≤ 500ns 35 5 @ 200V DO-214AB, SMC -50 to 175 Active
ES3D-13-F Diodes Incorporated 200 3 900 @ 3A Fast Recovery ≤ 500ns 25 10 @ 200V DO-214AB, SMC -55 to 150 Active
MURS320-13-F Diodes Incorporated 200 3 875 @ 3A Fast Recovery ≤ 500ns 25 5 @ 200V DO-214AB, SMC -65 to 175 Active
MURS320-E3/57T Vishay General Semiconductor - Diodes Division 200 3 875 @ 3A Fast Recovery ≤ 500ns 35 5 @ 200V DO-214AB, SMC -65 to 175 Active
MURS320-E3/9AT Vishay General Semiconductor - Diodes Division 200 3 875 @ 3A Fast Recovery ≤ 500ns 35 5 @ 200V DO-214AB, SMC -65 to 175 Active
MURS320-M3/57T Vishay General Semiconductor - Diodes Division 200 3 875 @ 3A Fast Recovery ≤ 500ns 35 5 @ 200V DO-214AB, SMC -65 to 175 Active
CGRC503-G Comchip Technology 200 5 1150 @ 5A Standard Recovery > 500ns 10 @ 200V DO-214AB, SMC -55 to 150 Active
ES3DB-13-F Diodes Incorporated 200 3 900 @ 3A Fast Recovery ≤ 500ns 25 10 @ 200V DO-214AA, SMB -55 to 150 Active

Engineering Selection Recommendations

Parametric Equivalent (Recommended Primary Substitutes):

ES3DH is the direct parametric equivalent to ES3D R7G, manufactured by the same supplier (Taiwan Semiconductor Corporation) with identical electrical specifications and operating temperature range. This part is currently active and available in volume. ES3DH differs only in packaging format (Tape & Reel versus bulk) and includes AEC-Q101 automotive qualification.

CSFC303-G (Comchip Technology) and ER3D-TP (Micro Commercial Co) are functionally equivalent with matching voltage, current, and fast recovery specifications. Both maintain the -55°C to 150°C operating range. ER3D-TP offers extended upper temperature capability to 175°C and higher inventory availability (16,840 pcs).

Secondary Substitutes (Acceptable with Parameter Verification):

ES3D-13-F (Diodes Incorporated) maintains all critical electrical parameters with improved forward voltage (900 mV vs. 950 mV) and faster reverse recovery time (25 ns vs. 35 ns). This part is suitable for applications where lower forward voltage drop is beneficial.

MURS320 series parts (Diodes Incorporated and Vishay) provide superior reverse leakage current (5 µA vs. 10 µA) and extended operating temperature range (-65°C to 175°C). Forward voltage is lower (875 mV), and reverse recovery time is 25 ns or 35 ns depending on variant. These parts are suitable for high-reliability and wide-temperature applications.

Not Recommended as Direct Substitute:

CGRC503-G is rated for 5 A average rectified current and exhibits standard recovery characteristics (>500ns), making it unsuitable for direct substitution in circuits designed for 3 A fast recovery operation.

ES3DB-13-F uses DO-214AA (SMB) package instead of DO-214AB (SMC), requiring PCB layout modification and is not a direct mechanical substitute.

Frequently Asked Questions (FAQ)

Q: Can ES3DH be used as a direct replacement for ES3D R7G?

A: Yes. ES3DH is a parametric equivalent with identical voltage (200 V), current (3 A), forward voltage (950 mV @ 3 A), reverse recovery time (35 ns), and operating temperature range (-55°C to 150°C). The primary difference is packaging format (Tape & Reel versus bulk). Both parts are RoHS3 compliant and MSL 1.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes have reverse recovery time ≤ 500ns and are designed for high-frequency switching applications. Standard recovery diodes have reverse recovery time >500ns and are suitable for lower-frequency rectification. ES3D R7G is a fast recovery diode. CGRC503-G is standard recovery and not interchangeable for switching applications.

Q: Can MURS320-13-F replace ES3D R7G in all applications?

A: MURS320-13-F is electrically compatible with lower forward voltage (875 mV vs. 950 mV), lower reverse leakage (5 µA vs. 10 µA), and extended temperature range (-65°C to 175°C). It is suitable for most applications. However, the lower forward voltage may affect circuit behavior in precision rectification or voltage reference circuits. Verify forward voltage tolerance requirements before substitution.

Q: Why does ER3D-TP have a different operating temperature range (-50°C to 175°C) compared to ES3D R7G (-55°C to 150°C)?

A: Different manufacturers specify different maximum junction temperatures and minimum operating temperatures based on their design and qualification standards. ER3D-TP offers higher maximum temperature capability (175°C vs. 150°C) but a higher minimum temperature (-50°C vs. -55°C). Select based on application temperature requirements.

Q: Is package type critical for substitution?

A: Yes. ES3D R7G uses DO-214AB (SMC) package. ES3DB-13-F uses DO-214AA (SMB) package, which has different physical dimensions and PCB footprint. Direct substitution requires matching package type unless PCB redesign is acceptable. All recommended substitutes use DO-214AB (SMC) package.

Q: What does RoHS3 compliance mean?

A: RoHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates the part does not contain restricted substances including lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls, or polybrominated diphenyl ethers. All listed substitute parts are RoHS3 compliant.

Q: Can I use CGRC503-G (5 A rated) instead of ES3D R7G (3 A rated)?

A: CGRC503-G is rated for higher current (5 A) but exhibits standard recovery characteristics (>500ns) instead of fast recovery (≤500ns). It is not suitable for direct substitution in fast recovery switching applications. Additionally, the higher current rating does not provide functional benefit in 3 A circuits and may introduce unnecessary cost.

Q: What is reverse leakage current and why does it matter?

A: Reverse leakage current (Ir) is the small current that flows through a reverse-biased diode. ES3D R7G specifies 10 µA @ 200 V. Lower reverse leakage (5 µA in MURS320 and ER3D-TP) reduces power dissipation and improves circuit performance in precision applications. Higher leakage is acceptable in standard rectification circuits.

Q: Are all substitute parts available in the same packaging formats?

A: No. ES3D-13-F is available in Cut Tape (CT) & Digi-Reel format. ER3D-TP, MURS320-E3/9AT, and MURS320-M3/57T are available in Tape & Reel (TR). ES3DH is available in Tape & Reel (TR). Verify packaging availability with your supplier for procurement requirements.

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