ES3D M6G Equivalent & Substitute Parts

Part Overview

The ES3D M6G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 3 A average rectified current in a DO-214AB (SMC) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design and procurement requirements. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives within acceptable parameter variations for the application category.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 3 A	mV
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	10	µA @ 200 V
Capacitance @ Vr, F	45	pF @ 4V, 1MHz
Package / Case	DO-214AB, SMC	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the ES3D M6G is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain 200 V DC reverse voltage (Vr) maximum to ensure equivalent reverse bias capability.

Current Rating: The 3 A average rectified current (Io) is the primary current specification. Parts rated at 3 A are direct equivalents; parts rated at 5 A are functional substitutes with higher current capacity.

Speed Classification: Fast recovery diodes with reverse recovery time ≤ 500 ns and > 200 mA (Io) are equivalent. Standard recovery diodes (> 500 ns) represent functional alternatives with different switching characteristics.

Package Type: DO-214AB (SMC) and SMC packages are mechanically and electrically equivalent. DO-214AA (SMB) packages differ in physical dimensions and are considered package variants rather than direct substitutes.

Forward Voltage: Forward voltage drop at rated current ranges from 875 mV to 1.15 V across the substitute population. Variations within this range are acceptable for general-purpose rectification applications.

Reverse Leakage Current: Leakage current specifications range from 5 µA to 10 µA at 200 V, representing acceptable variation in reverse bias characteristics.

Temperature Range: Operating junction temperature ranges from -50°C to 175°C across the substitute population. The ES3D M6G operates -55°C to 150°C; substitutes with extended ranges provide additional margin.

Compliance & Certifications: RoHS3 compliance is universal across all parts. Automotive-grade parts (AEC-Q101 qualified) are available as premium alternatives.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [mV]	Speed	trr [ns]	Ir @ Vr [µA]	Package	Temp Range [°C]	Status
ES3D M6G	Taiwan Semiconductor	200	3	950 @ 3A	Fast Recovery ≤ 500ns	35	10 @ 200V	DO-214AB (SMC)	-55 to 150	Discontinued
ES3DH	Taiwan Semiconductor	200	3	950 @ 3A	Fast Recovery ≤ 500ns	35	10 @ 200V	DO-214AB (SMC)	-55 to 150	Active
CSFC303-G	Comchip Technology	200	3	950 @ 3A	Fast Recovery ≤ 500ns	35	5 @ 200V	DO-214AB (SMC)	-55 to 150	Active
ER3D-TP	Micro Commercial Co	200	3	950 @ 3A	Fast Recovery ≤ 500ns	35	5 @ 200V	DO-214AB (SMC)	-50 to 175	Active
ES3D-13-F	Diodes Incorporated	200	3	900 @ 3A	Fast Recovery ≤ 500ns	25	10 @ 200V	DO-214AB (SMC)	-55 to 150	Active
ES3DB-13-F	Diodes Incorporated	200	3	900 @ 3A	Fast Recovery ≤ 500ns	25	10 @ 200V	DO-214AA (SMB)	-55 to 150	Active
ESH3DHE3_A/H	Vishay General Semiconductor	200	3	900 @ 3A	Fast Recovery ≤ 500ns	40	5 @ 200V	DO-214AB (SMC)	-55 to 175	Active
MURS320-13-F	Diodes Incorporated	200	3	875 @ 3A	Fast Recovery ≤ 500ns	25	5 @ 200V	DO-214AB (SMC)	-65 to 175	Active
MURS320-E3/57T	Vishay General Semiconductor	200	3	875 @ 3A	Fast Recovery ≤ 500ns	35	5 @ 200V	DO-214AB (SMC)	-65 to 175	Active
MURS320-E3/9AT	Vishay General Semiconductor	200	3	875 @ 3A	Fast Recovery ≤ 500ns	35	5 @ 200V	DO-214AB (SMC)	-65 to 175	Active
CGRC503-G	Comchip Technology	200	5	1150 @ 5A	Standard Recovery > 500ns	—	10 @ 200V	DO-214AB (SMC)	-55 to 150	Active

Engineering Selection Recommendations

Direct Equivalent (Parametric Match):

ES3DH is the direct parametric equivalent to ES3D M6G, manufactured by Taiwan Semiconductor Corporation. Both parts share identical electrical specifications (200 V, 3 A, 950 mV forward voltage, 35 ns recovery time) and operating temperature range (-55°C to 150°C). ES3DH is available in active production status with Tape & Reel packaging, providing a seamless replacement for discontinued ES3D M6G inventory.

Primary Substitutes (Identical Voltage & Current, Fast Recovery):

ES3D-13-F (Diodes Incorporated), CSFC303-G (Comchip Technology), ER3D-TP (Micro Commercial Co), MURS320-13-F (Diodes Incorporated), MURS320-E3/57T (Vishay), and MURS320-E3/9AT (Vishay) all maintain 200 V reverse voltage and 3 A current ratings with fast recovery characteristics. These parts are functionally equivalent for general-purpose rectification applications. Forward voltage drops range from 875 mV to 950 mV, representing acceptable variation. All are RoHS3 compliant and in active production.

Extended Temperature Range Alternatives:

ER3D-TP, ESH3DHE3_A/H, MURS320-13-F, MURS320-E3/57T, and MURS320-E3/9AT provide operating temperature ranges extending to 175°C, offering additional thermal margin beyond the ES3D M6G specification of 150°C maximum junction temperature.

Automotive-Grade Options:

ES3DH and ESH3DHE3_A/H carry AEC-Q101 automotive qualification, suitable for applications requiring automotive-grade component certification.

Package Variant:

ES3DB-13-F is electrically equivalent to ES3D-13-F but uses DO-214AA (SMB) package instead of DO-214AB (SMC). This package variant requires PCB layout modification and is not a direct mechanical substitute.

Higher Current Alternative:

CGRC503-G provides 5 A current capacity at 200 V reverse voltage, suitable for applications requiring higher current handling. This part uses standard recovery speed (> 500 ns) rather than fast recovery, resulting in different switching characteristics.

Frequently Asked Questions (FAQ)

Q: Can ES3DH directly replace ES3D M6G without PCB modification?

A: Yes. ES3DH is a parametric equivalent with identical electrical specifications and DO-214AB (SMC) package dimensions. No PCB layout changes are required.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes (≤ 500 ns reverse recovery time) switch off more quickly, reducing switching losses and noise. Standard recovery diodes (> 500 ns) have slower switching characteristics. CGRC503-G is a standard recovery part; all other substitutes are fast recovery.

Q: Can I use MURS320-13-F instead of ES3D M6G?

A: Yes. MURS320-13-F maintains 200 V reverse voltage and 3 A current rating with fast recovery characteristics. Forward voltage is 875 mV versus 950 mV for ES3D M6G, representing a 75 mV improvement. Operating temperature range extends to 175°C.

Q: Is ES3DB-13-F compatible with ES3D M6G?

A: ES3DB-13-F is electrically equivalent but uses DO-214AA (SMB) package instead of DO-214AB (SMC). Physical dimensions differ, requiring PCB footprint modification. Electrical performance is identical.

Q: What does RoHS3 compliance mean?

A: RoHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates the part contains no lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls, or polybrominated diphenyl ethers above specified thresholds. All listed substitutes are RoHS3 compliant.

Q: Can I use CGRC503-G (5 A) in place of ES3D M6G (3 A)?

A: CGRC503-G is functionally compatible for applications requiring 3 A or less, as it provides higher current capacity. However, it uses standard recovery speed (> 500 ns) versus fast recovery (≤ 500 ns) for ES3D M6G, resulting in different switching performance. Forward voltage is also higher at 1.15 V versus 950 mV.

Q: What is the significance of reverse recovery time (trr)?

A: Reverse recovery time is the interval required for a diode to stop conducting after reverse bias is applied. Lower trr values (25-35 ns) reduce switching losses and electromagnetic interference. ES3D M6G specifies 35 ns; ES3D-13-F and MURS320-13-F specify 25 ns, providing faster switching.

Q: Are automotive-grade parts (AEC-Q101) required for my application?

A: AEC-Q101 qualification is required only for automotive applications subject to automotive industry standards. ES3DH and ESH3DHE3_A/H carry this qualification; other substitutes do not. For non-automotive applications, AEC-Q101 qualification is not necessary.

Q: What is the difference between Cut Tape (CT) and Tape & Reel (TR) packaging?

A: Tape & Reel packaging is supplied on continuous carrier tape suitable for automated pick-and-place assembly. Cut Tape is supplied in smaller quantities on cut segments of carrier tape. Both formats contain identical components; packaging format affects procurement and assembly processes only.

Q: Can I substitute parts with different reverse leakage current specifications?

A: Yes. Reverse leakage current ranges from 5 µA to 10 µA across the substitute population. These variations are acceptable for general-purpose rectification. Applications with stringent leakage requirements should verify specific part leakage characteristics.

Q: What is the operating temperature range significance?

A: Operating temperature range defines the junction temperature limits for reliable operation. ES3D M6G operates -55°C to 150°C. Substitutes with extended ranges (to 175°C) provide additional thermal margin but are not required unless application temperatures exceed 150°C.

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