ES3DHM6G Equivalent & Substitute Parts

Part Overview

The ES3DHM6G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 3 A average rectified current in a DO-214AB (SMC) surface mount package. This component is classified as discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement requirements. The part meets automotive-grade specifications with AEC-Q101 qualification and operates across a junction temperature range of -55°C to 150°C.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 3 A	mV
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	10	µA @ 200 V
Capacitance @ Vr, F	45	pF @ 4V, 1MHz
Package / Case	DO-214AB, SMC	—
Operating Temperature - Junction	-55 to 150	°C
Grade	Automotive	—
Qualification	AEC-Q101	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the ES3DHM6G is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3 A
Package / Case: DO-214AB (SMC)
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns or lower
Mounting Type: Surface Mount

Direct Equivalents maintain all primary criteria and are suitable for one-to-one replacement without circuit modification. These parts are manufactured by different suppliers but share identical electrical ratings and package specifications.

Functional Alternatives meet the core voltage and current requirements with the same package type but may exhibit minor variations in forward voltage drop, reverse leakage current, or reverse recovery time within acceptable engineering tolerances. These parts are suitable for applications where the specific performance characteristics of the ES3DHM6G are not critical design constraints.

Package Variants maintain electrical equivalence but utilize different surface mount package designations (SMC versus SMB), requiring PCB layout verification before implementation.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [mV]	Speed	trr [ns]	Ir @ Vr [µA]	Package	Product Status
ES3DHM6G	Taiwan Semiconductor Corporation	200	3	950 @ 3A	Fast Recovery ≤ 500ns	35	10 @ 200V	DO-214AB (SMC)	Discontinued
ES3DH	Taiwan Semiconductor Corporation	200	3	950 @ 3A	Fast Recovery ≤ 500ns	35	10 @ 200V	DO-214AB (SMC)	Active
CSFC303-G	Comchip Technology	200	3	950 @ 3A	Fast Recovery ≤ 500ns	35	5 @ 200V	DO-214AB (SMC)	Active
ER3D-TP	Micro Commercial Co	200	3	950 @ 3A	Fast Recovery ≤ 500ns	35	5 @ 200V	DO-214AB (SMC)	Active
ES3D-13-F	Diodes Incorporated	200	3	900 @ 3A	Fast Recovery ≤ 500ns	25	10 @ 200V	DO-214AB (SMC)	Active
ES3DB-13-F	Diodes Incorporated	200	3	900 @ 3A	Fast Recovery ≤ 500ns	25	10 @ 200V	DO-214AA (SMB)	Active
MURS320-13-F	Diodes Incorporated	200	3	875 @ 3A	Fast Recovery ≤ 500ns	25	5 @ 200V	DO-214AB (SMC)	Active
MURS320-E3/57T	Vishay General Semiconductor - Diodes Division	200	3	875 @ 3A	Fast Recovery ≤ 500ns	35	5 @ 200V	DO-214AB (SMC)	Active
MURS320-E3/9AT	Vishay General Semiconductor - Diodes Division	200	3	875 @ 3A	Fast Recovery ≤ 500ns	35	5 @ 200V	DO-214AB (SMC)	Active
MURS320-M3/57T	Vishay General Semiconductor - Diodes Division	200	3	875 @ 3A	Fast Recovery ≤ 500ns	35	5 @ 200V	DO-214AB (SMC)	Active
CGRC503-G	Comchip Technology	200	5	1150 @ 5A	Standard Recovery > 500ns	—	10 @ 200V	DO-214AB (SMC)	Active

Engineering Selection Recommendations

Direct Replacement (Preferred):

The ES3DH manufactured by Taiwan Semiconductor Corporation is the direct equivalent to the ES3DHM6G. This part maintains identical electrical specifications, automotive-grade qualification (AEC-Q101), and package configuration. The ES3DH is currently in active production status with 3702 units available in inventory, providing supply continuity for applications previously designed around the ES3DHM6G.

Primary Alternatives (Recommended):

The following parts satisfy all critical substitution parameters and are suitable for direct circuit implementation:

CSFC303-G (Comchip Technology): Maintains 200 V / 3 A ratings with fast recovery characteristics. Reverse leakage current is 5 µA, which is lower than the original specification, providing improved performance in high-impedance applications.
ER3D-TP (Micro Commercial Co): Meets all electrical requirements with extended operating temperature range (-50°C to 175°C). This part offers the highest inventory availability at 16,840 units.
ES3D-13-F (Diodes Incorporated): Provides improved performance with reduced forward voltage drop (900 mV versus 950 mV) and faster reverse recovery time (25 ns versus 35 ns). This part is available in high volume (45,182 units) and is suitable for applications requiring enhanced efficiency.
MURS320-E3/57T and MURS320-E3/9AT (Vishay General Semiconductor - Diodes Division): Both variants meet the core 200 V / 3 A specifications with extended operating temperature range (-65°C to 175°C). These parts feature lower reverse leakage current (5 µA) and are suitable for automotive and industrial applications requiring enhanced temperature performance.

Package Variant:

The ES3DB-13-F (Diodes Incorporated) is electrically equivalent but utilizes the DO-214AA (SMB) package instead of DO-214AB (SMC). This part requires PCB layout modification and is suitable only when SMB package footprints are available or preferred.

Not Recommended:

The CGRC503-G (Comchip Technology) is rated for 5 A average rectified current, exceeding the 3 A requirement of the ES3DHM6G. While this part operates at the same 200 V reverse voltage, the higher current rating and standard recovery speed classification make it unsuitable as a direct substitute. This part is appropriate only for applications requiring higher current capacity.

Frequently Asked Questions (FAQ)

Q: Can the ES3DH be used as a direct replacement for the ES3DHM6G without circuit modification?

A: Yes. The ES3DH is manufactured by the same supplier (Taiwan Semiconductor Corporation) and maintains identical electrical specifications, package configuration, and automotive qualification. No circuit modification is required.

Q: What is the difference between the ES3D-13-F and the ES3DHM6G?

A: The ES3D-13-F offers improved performance characteristics: forward voltage drop is reduced from 950 mV to 900 mV, and reverse recovery time is faster at 25 ns compared to 35 ns. Both parts are rated for 200 V / 3 A and use the DO-214AB (SMC) package. The ES3D-13-F is manufactured by Diodes Incorporated and is currently in active production.

Q: Why is the CGRC503-G not recommended as a substitute?

A: The CGRC503-G is rated for 5 A average rectified current, which exceeds the 3 A specification of the ES3DHM6G. Additionally, this part uses standard recovery speed classification (>500 ns) rather than fast recovery (≤500 ns). This part is suitable only for applications requiring higher current capacity.

Q: Can the ES3DB-13-F be used in place of the ES3DHM6G?

A: The ES3DB-13-F is electrically equivalent but uses the DO-214AA (SMB) package instead of DO-214AB (SMC). Substitution requires verification that the PCB footprint accommodates the SMB package. The electrical performance is improved, with lower forward voltage drop (900 mV) and faster recovery time (25 ns).

Q: What are the key parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1) Voltage - DC Reverse (Vr) rating of 200 V, (2) Current - Average Rectified (Io) rating of 3 A, (3) Fast Recovery speed classification (≤500 ns), (4) DO-214AB (SMC) package configuration, and (5) Surface mount mounting type. Forward voltage drop, reverse leakage current, and reverse recovery time variations within the specified ranges do not prevent substitution.

Q: Which substitute part offers the best performance improvement?

A: The ES3D-13-F and MURS320 series parts offer measurable performance improvements: reduced forward voltage drop (875–900 mV versus 950 mV) and faster reverse recovery time (25 ns versus 35 ns). These improvements reduce power dissipation and switching losses, making them suitable for efficiency-critical applications.

Q: Are all substitute parts RoHS3 compliant and REACH unaffected?

A: Yes. All substitute parts listed in this reference maintain ROHS3 compliance and REACH unaffected status, consistent with the ES3DHM6G original specification.

Q: What is the difference between the MURS320-E3/57T and MURS320-E3/9AT?

A: Both parts are electrically identical, rated for 200 V / 3 A with fast recovery characteristics. The difference is in packaging format: MURS320-E3/57T is supplied in Cut Tape (CT), while MURS320-E3/9AT is supplied in Tape & Reel (TR). Selection depends on procurement and assembly requirements.

Q: Can the ER3D-TP be used in automotive applications?

A: The ER3D-TP meets the core electrical requirements for 200 V / 3 A rectification. However, the original ES3DHM6G carries automotive-grade qualification (AEC-Q101). The ER3D-TP does not specify automotive qualification in the provided data. Verification with the manufacturer is required for applications with explicit automotive qualification requirements.

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