ES3DB R5G Equivalent & Substitute Parts

Part Overview

The ES3DB R5G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 3 A average rectified current in a DO-214AA (SMB) surface mount package. This part is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

The ES3DB R5G operates across a junction temperature range of -55°C to 150°C and features fast recovery characteristics with a reverse recovery time of 35 nanoseconds. The device is RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory standards.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	1	V @ 3 A
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	10	µA @ 200 V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Package / Case	DO-214AA, SMB	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the ES3DB R5G is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3 A
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Technology: Standard (Fast Recovery)

Secondary Compatibility Factors:

Reverse Recovery Time (trr): 35 ns or equivalent performance
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance and REACH Unaffected status

Parts are classified into two categories:

Parametric Equivalents maintain identical electrical specifications (200 V, 3 A, 35 ns trr) with variations only in packaging format (Cut Tape vs. Tape & Reel) or minor leakage current differences within acceptable operating margins.

Similar Parts share the same voltage and package specifications but differ in current rating (1 A or 2 A) or reverse recovery time characteristics. These are suitable only when circuit design permits reduced current capacity or alternative switching performance.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	trr [ns]	Ir @ Vr [µA]	Package	Packaging Format	Product Status
ES3DB R5G	Taiwan Semiconductor Corporation	200	3	1 @ 3 A	35	10 @ 200 V	DO-214AA, SMB	Cut Tape (CT)	Discontinued at DiGi Electronics
ES3DB	MDD	200	3	1 @ 3 A	35	5 @ 200 V	DO-214AA, SMB	Tape & Reel (TR)	Active
ES3DBHR5G	Taiwan Semiconductor Corporation	200	3	1 @ 3 A	35	100 @ 200 V	DO-214AA, SMB	Cut Tape (CT)	Active
HS3DB	Taiwan Semiconductor Corporation	200	3	1 @ 3 A	50	10 @ 200 V	DO-214AA, SMB	Tape & Reel (TR)	Active
HS3DB R5G	Taiwan Semiconductor Corporation	200	3	1 @ 3 A	50	10 @ 200 V	DO-214AA, SMB	Cut Tape (CT)	Discontinued at DiGi Electronics
ER3DB-TP	Micro Commercial Co	200	3	950 mV @ 3 A	35	5 @ 200 V	DO-214AA, SMB	Tape & Reel (TR)	Active
CSFB203-G	Comchip Technology	200	2	920 mV @ 2 A	35	5 @ 200 V	DO-214AA, SMB	Tape & Reel (TR)	Active
ER1D-LTP	Micro Commercial Co	200	1	950 mV @ 1 A	35	5 @ 200 V	DO-214AA, SMB	Tape & Reel (TR)	Active
ER2D-LTP	Micro Commercial Co	200	2	950 mV @ 2 A	35	5 @ 200 V	DO-214AA, SMB	Tape & Reel (TR)	Active
ES2D-13-F	Diodes Incorporated	200	2	920 mV @ 2 A	25	5 @ 200 V	DO-214AA, SMB	Cut Tape (CT) & Digi-Reel®	Active
ES2DA-13-F	Diodes Incorporated	200	2	920 mV @ 2 A	25	5 @ 200 V	DO-214AC, SMA	Tape & Reel (TR)	Active

Engineering Selection Recommendations

Parametric Equivalent Selection (Preferred for Direct Replacement):

The ES3DB (MDD) represents the primary parametric equivalent, maintaining identical electrical specifications (200 V, 3 A, 35 ns reverse recovery time) with superior reverse leakage characteristics (5 µA versus 10 µA). This part is currently active and available in Tape & Reel packaging format. The ES3DBHR5G (Taiwan Semiconductor Corporation) provides an alternative from the original manufacturer but exhibits elevated reverse leakage current (100 µA), which may impact circuit performance in applications sensitive to leakage characteristics.

Alternative 3 A Rated Options:

The ER3DB-TP (Micro Commercial Co) maintains full electrical equivalence with 200 V, 3 A, and 35 ns reverse recovery time specifications. This part is active and available in Tape & Reel format, with forward voltage specification of 950 mV at 3 A (50 mV lower than the main part).

The HS3DB and HS3DB R5G (Taiwan Semiconductor Corporation) provide 200 V, 3 A rated devices with extended reverse recovery time of 50 nanoseconds. These parts are suitable for applications where slightly slower switching performance is acceptable. The HS3DB is active in Tape & Reel format; the HS3DB R5G is discontinued at DiGi Electronics.

Reduced Current Alternatives (2 A Rated):

The ER2D-LTP (Micro Commercial Co) and ES2D-13-F (Diodes Incorporated) are rated for 2 A average rectified current at 200 V. These parts are suitable only for circuit designs that do not require the full 3 A capacity. The ES2D-13-F offers improved reverse recovery time (25 ns) and is available in Cut Tape format with high inventory levels.

Packaging Considerations:

The main part ES3DB R5G is supplied in Cut Tape (CT) format. Equivalent parts in Tape & Reel (TR) format (ES3DB, HS3DB, ER3DB-TP) are suitable for high-volume automated assembly processes. Cut Tape format remains available through ES3DBHR5G and HS3DB R5G, though the latter is discontinued at DiGi Electronics.

Compliance and Regulatory Status:

All recommended substitute parts maintain RoHS3 compliance and REACH unaffected status, consistent with the original ES3DB R5G specifications.

Frequently Asked Questions (FAQ)

Q: Can the ES3DB (MDD) directly replace the ES3DB R5G?

A: Yes. The ES3DB maintains identical electrical specifications (200 V, 3 A, 35 ns reverse recovery time) and package format (DO-214AA, SMB). The primary difference is packaging format (Tape & Reel versus Cut Tape) and slightly improved reverse leakage current (5 µA versus 10 µA). This part is currently active and recommended for new designs.

Q: What is the difference between the ES3DBHR5G and the original ES3DB R5G?

A: Both parts are rated for 200 V, 3 A with 35 ns reverse recovery time in DO-214AA package. The ES3DBHR5G exhibits significantly higher reverse leakage current (100 µA at 200 V versus 10 µA), which may affect circuit performance in applications sensitive to leakage. The ES3DBHR5G is currently active; the ES3DB R5G is discontinued.

Q: Can I use a 2 A rated diode (ER2D-LTP or ES2D-13-F) instead of the 3 A ES3DB R5G?

A: Only if circuit design permits operation at reduced current capacity. The ER2D-LTP and ES2D-13-F are rated for maximum 2 A average rectified current. Using these parts in applications requiring 3 A operation will result in device overstress and potential failure. Verify circuit current requirements before substitution.

Q: What is the significance of reverse recovery time (trr) in diode selection?

A: Reverse recovery time determines switching speed and affects circuit efficiency, particularly in high-frequency applications. The ES3DB R5G specifies 35 ns trr. The HS3DB series offers 50 ns trr (slower switching), while the ES2D-13-F offers 25 ns trr (faster switching). Select based on circuit switching frequency requirements.

Q: Are there package format restrictions for the ES3DB R5G substitutes?

A: The ES3DB R5G is supplied in Cut Tape (CT) format. Equivalent parts are available in both Cut Tape and Tape & Reel (TR) formats. Tape & Reel format is standard for automated assembly; Cut Tape format is suitable for manual or semi-automated processes. Both formats contain identical components; selection depends on assembly process requirements.

Q: Why is the ES3DB R5G discontinued at DiGi Electronics?

A: Discontinuation typically reflects supplier production decisions or market consolidation. Equivalent parts from alternative manufacturers (MDD, Micro Commercial Co, Diodes Incorporated) remain active and available, ensuring continued design support and procurement options.

Q: What does RoHS3 compliance mean for this diode?

A: RoHS3 compliance certifies that the component meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. All recommended substitute parts maintain RoHS3 compliance, ensuring compatibility with environmental and regulatory standards.

Q: Can I substitute the ES2DA-13-F (SMA package) for the ES3DB R5G (SMB package)?

A: No. The ES2DA-13-F uses DO-214AC (SMA) package, which is physically and electrically distinct from the DO-214AA (SMB) package of the ES3DB R5G. Additionally, the ES2DA-13-F is rated for 2 A, not 3 A. Package compatibility is mandatory for PCB assembly; substitution requires board redesign.

Q: How do forward voltage specifications affect diode selection?

A: The ES3DB R5G specifies 1 V forward voltage at 3 A. Alternative parts specify 950 mV (ER3DB-TP, ER2D-LTP) or 920 mV (CSFB203-G, ES2D-13-F) at their respective rated currents. Lower forward voltage reduces power dissipation and heat generation. Verify circuit design tolerance for forward voltage variation before substitution.

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