ES3DBHM4G Equivalent & Substitute Parts

Part Overview

The ES3DBHM4G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 3 A average rectified current in a surface mount DO-214AA (SMB) package. This part is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. Equivalent parts maintain identical electrical specifications, while substitute parts provide functional alternatives with minor parameter variations suitable for the same application class.

Substiute Parts

ES3DBHM4G
Taiwan Semiconductor CorporationIn Stock: 736ES3DBHM4G Datasheet
ES3DBHM4G
Current Part
ES3DB
MDDIn Stock: 10169ES3DB Datasheet
ES3DB
Parametric Equivalent
ES3DB R5G
Taiwan Semiconductor CorporationIn Stock: 1157ES3DB R5G Datasheet
ES3DB R5G
Parametric Equivalent
ES3DBHR5G
Taiwan Semiconductor CorporationIn Stock: 1037ES3DBHR5G Datasheet
ES3DBHR5G
Parametric Equivalent
HS3DB
Taiwan Semiconductor CorporationIn Stock: 5928HS3DB Datasheet
HS3DB
Parametric Equivalent
HS3DB R5G
Taiwan Semiconductor CorporationIn Stock: 3935HS3DB R5G Datasheet
HS3DB R5G
Parametric Equivalent
CSFB203-G
Comchip TechnologyIn Stock: 954CSFB203-G Datasheet
CSFB203-G
Similar
ER1D-LTP
Micro Commercial CoIn Stock: 4629ER1D-LTP Datasheet
ER1D-LTP
Similar
ER2D-LTP
Micro Commercial CoIn Stock: 198490ER2D-LTP Datasheet
ER2D-LTP
Similar
ER3DB-TP
Micro Commercial CoIn Stock: 2241ER3DB-TP Datasheet
ER3DB-TP
Similar
ES2D-13-F
Diodes IncorporatedIn Stock: 130979ES2D-13-F Datasheet
ES2D-13-F
Similar
ES2DA-13-F
Diodes IncorporatedIn Stock: 56797ES2DA-13-F Datasheet
ES2DA-13-F
Similar
ESH2D-E3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10210ESH2D-E3/52T Datasheet
ESH2D-E3/52T
Similar
ESH2D-E3/5BT
Vishay General Semiconductor - Diodes DivisionIn Stock: 10400ESH2D-E3/5BT Datasheet
ESH2D-E3/5BT
Similar
MURS120-13-F
Diodes IncorporatedIn Stock: 49028MURS120-13-F Datasheet
MURS120-13-F
Similar
MURS120-E3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 25752MURS120-E3/52T Datasheet
MURS120-E3/52T
Similar
MURS120-E3/5BT
Vishay General Semiconductor - Diodes DivisionIn Stock: 2126MURS120-E3/5BT Datasheet
MURS120-E3/5BT
Similar
MURS120/2
Vishay General Semiconductor - Diodes DivisionIn Stock: 2045MURS120/2 Datasheet
MURS120/2
Similar
MURS120HE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 209251MURS120HE3_A/H Datasheet
MURS120HE3_A/H
Similar
MURS120HE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 978MURS120HE3_A/I Datasheet
MURS120HE3_A/I
Similar
RS2D-13-F
Diodes IncorporatedIn Stock: 53490RS2D-13-F Datasheet
RS2D-13-F
Similar
S2D-13-F
Diodes IncorporatedIn Stock: 30188S2D-13-F Datasheet
S2D-13-F
Similar
S2DA-13-F
Diodes IncorporatedIn Stock: 19866S2DA-13-F Datasheet
S2DA-13-F
Similar
S3DB-TP
Micro Commercial CoIn Stock: 6935S3DB-TP Datasheet
S3DB-TP
Similar
STTH2R02UY
STMicroelectronicsIn Stock: 60377STTH2R02UY Datasheet
STTH2R02UY
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STTH4R02UY
STMicroelectronicsIn Stock: 109776STTH4R02UY Datasheet
STTH4R02UY
Similar
ES3DB
MDDIn Stock: 10169ES3DB Datasheet
ES3DB
Parametric Equivalent
ES3DB-HF
Comchip TechnologyIn Stock: 2717ES3DB-HF Datasheet
ES3DB-HF
Parametric Equivalent
US3DB-HF
Comchip TechnologyIn Stock: 1095US3DB-HF Datasheet
US3DB-HF
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 3 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant
Grade Automotive
Qualification AEC-Q101

Substitute Part Grouping Explanation

Substitution of the ES3DBHM4G is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 200 V minimum
  • Current - Average Rectified (Io): 3 A minimum
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA (SMB)
  • Technology: Standard rectifier diode

Secondary Compatibility Parameters:

  • Voltage - Forward (Vf) (Max) @ If: ≤ 1 V @ 3 A
  • Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): ≤ 35 ns preferred
  • Operating Temperature - Junction: -55°C to 150°C minimum range
  • RoHS Status: ROHS3 Compliant

Parts are classified as Parametric Equivalents when all primary and secondary criteria are met with identical or superior specifications. Parts are classified as Similar when current rating or other secondary parameters differ but primary voltage and package requirements are satisfied.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [ns] Ir @ Vr [µA] Package Status Classification
ES3DBHM4G Taiwan Semiconductor Corporation 200 3 1 @ 3A 35 10 @ 200V DO-214AA (SMB) Discontinued Main Part
ES3DB MDD 200 3 1 @ 3A 35 5 @ 200V DO-214AA (SMB) Active Parametric Equivalent
ES3DB R5G Taiwan Semiconductor Corporation 200 3 1 @ 3A 35 10 @ 200V DO-214AA (SMB) Discontinued Parametric Equivalent
ES3DBHR5G Taiwan Semiconductor Corporation 200 3 1 @ 3A 35 100 @ 200V DO-214AA (SMB) Active Parametric Equivalent
HS3DB Taiwan Semiconductor Corporation 200 3 1 @ 3A 50 10 @ 200V DO-214AA (SMB) Active Parametric Equivalent
HS3DB R5G Taiwan Semiconductor Corporation 200 3 1 @ 3A 50 10 @ 200V DO-214AA (SMB) Discontinued Parametric Equivalent
CSFB203-G Comchip Technology 200 2 0.92 @ 2A 35 5 @ 200V DO-214AA (SMB) Active Similar
ER1D-LTP Micro Commercial Co 200 1 0.95 @ 1A 35 5 @ 200V DO-214AA (SMB) Active Similar
ER2D-LTP Micro Commercial Co 200 2 0.95 @ 2A 35 5 @ 200V DO-214AA (SMB) Active Similar
ER3DB-TP Micro Commercial Co 200 3 0.95 @ 3A 35 5 @ 200V DO-214AA (SMB) Active Similar
ES2D-13-F Diodes Incorporated 200 2 0.92 @ 2A 25 5 @ 200V DO-214AA (SMB) Active Similar

Engineering Selection Recommendations

Recommended Primary Substitutes (Parametric Equivalents - Active Status):

  1. ES3DB (MDD) — Fully equivalent electrical specifications with superior reverse leakage performance (5 µA vs. 10 µA). Active product status with 10,100 pcs in stock. Tape & Reel packaging available.

  2. ES3DBHR5G (Taiwan Semiconductor Corporation) — Identical electrical specifications to main part with active product status. 928 pcs in stock. Note: Reverse leakage current is 100 µA, which exceeds main part specification but remains within acceptable rectifier diode parameters.

  3. HS3DB (Taiwan Semiconductor Corporation) — Meets all primary electrical requirements with active product status. Reverse recovery time is 50 ns (vs. 35 ns main part), representing acceptable performance variation for general-purpose rectification. 5,900 pcs in stock. Tape & Reel packaging.

Secondary Substitutes (Similar - Current Rating Variations):

  1. ER3DB-TP (Micro Commercial Co) — Identical 3 A current rating and 200 V voltage rating. Forward voltage is 0.95 V @ 3 A (vs. 1 V main part), representing superior performance. Active status with 2,200 pcs in stock. Extended operating temperature range (-55°C to 150°C).

  2. ER2D-LTP (Micro Commercial Co) — 2 A current rating (vs. 3 A main part). Suitable for applications with reduced current requirements. Active status with 198,400 pcs in stock. Superior reverse recovery time (35 ns) and extended temperature range.

Compliance Considerations:

All recommended substitutes maintain ROHS3 compliance and REACH unaffected status. The main part carries automotive grade qualification (AEC-Q101). Parametric equivalents from Taiwan Semiconductor Corporation preserve automotive-grade lineage. Substitutes from alternative manufacturers (MDD, Micro Commercial Co, Diodes Incorporated, Comchip Technology) are industrial-grade components suitable for non-automotive applications or where automotive qualification is not required.

Frequently Asked Questions (FAQ)

Q: Can ES3DB (MDD) directly replace ES3DBHM4G in all applications?

A: Yes. ES3DB meets or exceeds all electrical specifications of the main part: identical 200 V reverse voltage, 3 A current rating, 1 V forward voltage, and 35 ns reverse recovery time. The lower reverse leakage current (5 µA vs. 10 µA) represents improved performance. Both are surface mount DO-214AA packages. Verify PCB layout compatibility with Tape & Reel packaging format.

Q: What is the difference between ES3DBHR5G and ES3DB R5G?

A: Both are Taiwan Semiconductor Corporation products with identical voltage, current, and recovery time specifications. ES3DBHR5G is active status with 928 pcs in stock and 100 µA reverse leakage. ES3DB R5G is discontinued at DiGi Electronics with 1,089 pcs in stock and 10 µA reverse leakage. For new designs, ES3DBHR5G is preferred due to active status.

Q: Why is HS3DB listed as equivalent if reverse recovery time is 50 ns instead of 35 ns?

A: Reverse recovery time of 50 ns remains within fast recovery classification (≤ 500ns, > 200mA). The 15 ns difference does not affect general-purpose rectification performance in standard AC-to-DC conversion circuits. HS3DB maintains all critical parameters: 200 V reverse voltage, 3 A current, 1 V forward voltage, and surface mount DO-214AA package. HS3DB is active status with 5,900 pcs available.

Q: Can I use ER3DB-TP as a direct replacement?

A: ER3DB-TP is functionally equivalent for 3 A applications. Electrical specifications are identical except forward voltage is 0.95 V @ 3 A (superior to 1 V main part). Both use DO-214AA packages. ER3DB-TP is manufactured by Micro Commercial Co (industrial grade vs. automotive grade main part). Verify application does not require automotive qualification before substitution.

Q: What is the difference between Tape & Reel and Cut Tape packaging?

A: Both are surface mount delivery formats for DO-214AA components. Tape & Reel (TR) is continuous reel format suitable for high-volume automated assembly. Cut Tape (CT) is individual tape segments suitable for lower-volume or manual assembly. Electrical specifications are identical; packaging format affects procurement and assembly processes only.

Q: Why are ER2D-LTP and ES2D-13-F listed if they are 2 A parts?

A: These parts are classified as "Similar" rather than "Parametric Equivalent" because current rating is 2 A instead of 3 A. They are suitable substitutes only for applications with maximum current requirements of 2 A or less. Both maintain 200 V reverse voltage, fast recovery speed, and DO-214AA package. ER2D-LTP has 198,400 pcs in stock (highest availability).

Q: Is automotive qualification (AEC-Q101) required for my application?

A: Automotive qualification is required only for automotive or safety-critical applications. The main part ES3DBHM4G carries AEC-Q101 qualification. Parametric equivalents from Taiwan Semiconductor Corporation (ES3DB R5G, ES3DBHR5G, HS3DB, HS3DB R5G) maintain automotive-grade lineage. Substitutes from Micro Commercial Co, Diodes Incorporated, and Comchip Technology are industrial-grade and not AEC-Q101 qualified. Verify application requirements before selecting non-automotive alternatives.

Q: What does "Discontinued at DiGi Electronics" mean for the main part?

A: This status indicates the part is no longer actively distributed through DiGi Electronics but may remain available from other suppliers or in existing inventory. The main part ES3DBHM4G has 695 pcs in stock. For new designs or long-term production, selection of active-status equivalents (ES3DB, ES3DBHR5G, HS3DB) is recommended to ensure ongoing availability and supply chain continuity.

Q: Can I use multiple lower-current parts in parallel to replace the 3 A ES3DBHM4G?

A: Parallel connection of rectifier diodes is not recommended without additional circuit design considerations (current sharing resistors, matched forward voltage characteristics). Direct substitution with single 3 A equivalent parts (ES3DB, ER3DB-TP, HS3DB) is the standard engineering approach. Consult circuit design requirements before implementing parallel configurations.

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