ES3B R7G Equivalent & Substitute Parts

Part Overview

The ES3B R7G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 3 A average rectified current in a DO-214AB (SMC) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

Substiute Parts

ES3B R7G
Taiwan Semiconductor CorporationIn Stock: 1030ES3B R7G Datasheet
ES3B R7G
Current Part
ES3B
Taiwan Semiconductor CorporationIn Stock: 10461ES3B Datasheet
ES3B
Parametric Equivalent
ES3BH
Taiwan Semiconductor CorporationIn Stock: 701ES3BH Datasheet
ES3BH
Parametric Equivalent
CGRC502-G
Comchip TechnologyIn Stock: 887CGRC502-G Datasheet
CGRC502-G
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CSFC302-G
Comchip TechnologyIn Stock: 833CSFC302-G Datasheet
CSFC302-G
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ES3B-13-F
Diodes IncorporatedIn Stock: 10183ES3B-13-F Datasheet
ES3B-13-F
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ES3BB-13-F
Diodes IncorporatedIn Stock: 126266ES3BB-13-F Datasheet
ES3BB-13-F
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ESH3B-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10475ESH3B-E3/57T Datasheet
ESH3B-E3/57T
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ESH3B-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1078ESH3B-E3/9AT Datasheet
ESH3B-E3/9AT
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ESH3B-M3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 884ESH3B-M3/57T Datasheet
ESH3B-M3/57T
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ESH3B-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1170ESH3B-M3/9AT Datasheet
ESH3B-M3/9AT
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ESH3BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1135ESH3BHE3_A/H Datasheet
ESH3BHE3_A/H
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ESH3BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1129ESH3BHE3_A/I Datasheet
ESH3BHE3_A/I
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RS3B-13-F
Diodes IncorporatedIn Stock: 9168RS3B-13-F Datasheet
RS3B-13-F
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RS3BB-13-F
Diodes IncorporatedIn Stock: 3201RS3BB-13-F Datasheet
RS3BB-13-F
Similar
RS3BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 831RS3BHE3_A/H Datasheet
RS3BHE3_A/H
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RS3BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 819RS3BHE3_A/I Datasheet
RS3BHE3_A/I
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S3B-13-F
Diodes IncorporatedIn Stock: 30129S3B-13-F Datasheet
S3B-13-F
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S3B-TP
Micro Commercial CoIn Stock: 8884S3B-TP Datasheet
S3B-TP
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S3BB-13-F
Diodes IncorporatedIn Stock: 19031S3BB-13-F Datasheet
S3BB-13-F
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S3BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1366S3BHE3_A/H Datasheet
S3BHE3_A/H
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S3BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 968S3BHE3_A/I Datasheet
S3BHE3_A/I
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S5BC-13-F
Diodes IncorporatedIn Stock: 6745S5BC-13-F Datasheet
S5BC-13-F
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S5BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 2628S5BHE3_A/H Datasheet
S5BHE3_A/H
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S5BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 812S5BHE3_A/I Datasheet
S5BHE3_A/I
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U3B-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 12243U3B-E3/57T Datasheet
U3B-E3/57T
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U3B-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 824U3B-E3/9AT Datasheet
U3B-E3/9AT
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U3B-M3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 864U3B-M3/57T Datasheet
U3B-M3/57T
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U3B-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 823U3B-M3/9AT Datasheet
U3B-M3/9AT
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ER3B_R1_00001
Panjit International Inc.In Stock: 1056ER3B_R1_00001 Datasheet
ER3B_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 3 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 100 V
Capacitance @ Vr, F 45 pF @ 4V, 1MHz
Package / Case DO-214AB, SMC
Mounting Type Surface Mount
Operating Temperature - Junction -55°C ~ 150°C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the ES3B R7G is determined by the following critical parameters:

Parametric Equivalents maintain identical electrical specifications across all key parameters: 100 V reverse voltage, 3 A average rectified current, fast recovery speed (≤ 500ns), 35 ns reverse recovery time, and DO-214AB (SMC) package. These parts are direct functional replacements with no design modifications required.

Similar Parts share the same voltage and current ratings with the same package type but may differ in one or more of the following: forward voltage drop, reverse recovery time, reverse leakage current, capacitance, or operating temperature range. These parts are suitable for applications where the specific parameter variation does not impact circuit performance.

Package Variants maintain electrical specifications but use alternative surface mount packages (SMB instead of SMC), requiring PCB layout modifications.

Current Rating Variants exceed the 3 A specification, providing higher current capacity in the same package and voltage class.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) Io Vf (Max) @ If Speed trr Ir @ Vr Package Product Status
ES3B R7G Taiwan Semiconductor Corporation 100 V 3 A 950 mV @ 3 A Fast Recovery ≤ 500ns 35 ns 10 µA @ 100 V DO-214AB (SMC) Discontinued
ES3B Taiwan Semiconductor Corporation 100 V 3 A 950 mV @ 3 A Fast Recovery ≤ 500ns 35 ns 10 µA @ 100 V DO-214AB (SMC) Active
ES3BH Taiwan Semiconductor Corporation 100 V 3 A 950 mV @ 3 A Fast Recovery ≤ 500ns 35 ns 10 µA @ 100 V DO-214AB (SMC) Active
CSFC302-G Comchip Technology 100 V 3 A 950 mV @ 3 A Fast Recovery ≤ 500ns 35 ns 5 µA @ 100 V DO-214AB (SMC) Active
ES3B-13-F Diodes Incorporated 100 V 3 A 900 mV @ 3 A Fast Recovery ≤ 500ns 25 ns 10 µA @ 100 V DO-214AB (SMC) Active
ES3BB-13-F Diodes Incorporated 100 V 3 A 900 mV @ 3 A Fast Recovery ≤ 500ns 25 ns 10 µA @ 100 V DO-214AA (SMB) Active
ESH3B-E3/57T Vishay General Semiconductor - Diodes Division 100 V 3 A 900 mV @ 3 A Fast Recovery ≤ 500ns 40 ns 5 µA @ 100 V DO-214AB (SMC) Active
ESH3B-E3/9AT Vishay General Semiconductor - Diodes Division 100 V 3 A 900 mV @ 3 A Fast Recovery ≤ 500ns 40 ns 5 µA @ 100 V DO-214AB (SMC) Active
ESH3B-M3/57T Vishay General Semiconductor - Diodes Division 100 V 3 A 900 mV @ 3 A Fast Recovery ≤ 500ns 40 ns 5 µA @ 100 V DO-214AB (SMC) Active
ESH3B-M3/9AT Vishay General Semiconductor - Diodes Division 100 V 3 A 900 mV @ 3 A Fast Recovery ≤ 500ns 40 ns 5 µA @ 100 V DO-214AB (SMC) Active
CGRC502-G Comchip Technology 100 V 5 A 1.15 V @ 5 A Standard Recovery > 500ns Not specified 10 µA @ 100 V DO-214AB (SMC) Active

Engineering Selection Recommendations

Primary Equivalent Selection:

The ES3B (base part number, active status) from Taiwan Semiconductor Corporation is the direct parametric equivalent to the discontinued ES3B R7G. This part maintains all electrical specifications and package configuration with active product status and full availability.

Automotive-Grade Alternative:

The ES3BH from Taiwan Semiconductor Corporation provides identical electrical specifications with automotive qualification (AEC-Q101) for applications requiring automotive-grade components. This part is suitable for designs requiring automotive compliance.

Alternative Manufacturers - Equivalent Performance:

The ES3B-13-F from Diodes Incorporated and the ESH3B series (E3/57T, E3/9AT, M3/57T, M3/9AT) from Vishay General Semiconductor - Diodes Division provide equivalent 100 V / 3 A fast recovery rectification in DO-214AB packages. These parts feature improved forward voltage characteristics (900 mV vs. 950 mV) and lower reverse leakage current (5 µA vs. 10 µA), with extended operating temperature ranges in the Vishay variants (-55°C to 175°C).

Alternative Manufacturers - Similar Performance:

The CSFC302-G from Comchip Technology matches the ES3B R7G electrical specifications with identical forward voltage and reverse recovery time, featuring lower reverse leakage current (5 µA).

Package Variant:

The ES3BB-13-F from Diodes Incorporated provides equivalent electrical performance in a DO-214AA (SMB) surface mount package. This variant requires PCB layout modification due to different package dimensions.

Higher Current Capacity:

The CGRC502-G from Comchip Technology provides 5 A average rectified current in the same 100 V / DO-214AB package. This part operates with standard recovery speed (> 500ns) and higher forward voltage (1.15 V @ 5 A), suitable for applications requiring increased current capacity.

Frequently Asked Questions (FAQ)

Q: Can ES3B-13-F directly replace ES3B R7G without circuit modifications?

A: Yes. The ES3B-13-F maintains the same 100 V reverse voltage, 3 A current rating, fast recovery speed, and DO-214AB package. The lower forward voltage (900 mV vs. 950 mV) and faster reverse recovery time (25 ns vs. 35 ns) represent improved performance characteristics with no adverse circuit impact.

Q: What is the difference between ES3B and ES3BH?

A: Both parts are electrically identical with 100 V / 3 A specifications and DO-214AB packaging. The ES3BH includes automotive qualification (AEC-Q101) and is designated for automotive applications. Selection depends on application requirements.

Q: Why would CGRC502-G be selected over ES3B?

A: The CGRC502-G provides 5 A average rectified current versus 3 A, offering higher current capacity in the same package and voltage class. Selection is appropriate only for applications requiring current ratings exceeding 3 A. The standard recovery speed (> 500ns) and higher forward voltage (1.15 V @ 5 A) differ from the original specification.

Q: Is ES3BB-13-F compatible with ES3B R7G?

A: The ES3BB-13-F is electrically equivalent but uses a DO-214AA (SMB) package instead of DO-214AB (SMC). PCB layout modification is required due to different package footprints. Electrical performance is equivalent.

Q: What are the advantages of Vishay ESH3B series parts?

A: The ESH3B series (E3/57T, E3/9AT, M3/57T, M3/9AT) provides extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C), lower reverse leakage current (5 µA vs. 10 µA), and improved forward voltage characteristics (900 mV vs. 950 mV). The M3 variants include specified capacitance (70 pF @ 4V, 1MHz).

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts maintain ROHS3 compliance, MSL 1 (Unlimited) moisture sensitivity level, and REACH unaffected status, matching the original ES3B R7G environmental and regulatory certifications.

Q: What is the significance of reverse recovery time differences?

A: Reverse recovery time (trr) affects switching speed and switching losses. The ES3B R7G specifies 35 ns. Alternatives with lower trr (ES3B-13-F at 25 ns) provide faster switching with reduced switching losses. Alternatives with higher trr (ESH3B series at 40 ns) represent acceptable variation within fast recovery classification (≤ 500ns).

Q: Can parts with different reverse leakage currents be interchanged?

A: Yes, within the specified voltage and current ratings. The ES3B R7G specifies 10 µA @ 100 V. Alternatives with lower reverse leakage (5 µA) represent improved performance. Higher leakage would be unacceptable; no alternatives exceed the original specification.

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