ES3B Equivalent & Substitute Parts

Part Overview

The ES3B is a general-purpose rectifier diode manufactured by onsemi, rated for 100 V DC reverse voltage and 3 A average rectified current in a surface mount SMC (DO-214AB) package. This component is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product portfolio. Identifying equivalent and substitute parts is necessary for legacy system support, design continuity, and procurement flexibility when the primary part becomes unavailable or when alternative sourcing is required.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 3 A	mV
Reverse Recovery Time (trr)	20	ns
Current - Reverse Leakage @ Vr	10	µA @ 100 V
Package / Case	DO-214AB, SMC	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-50 to 150	°C
Technology	Standard	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the ES3B are grouped based on strict electrical and mechanical compatibility criteria. All substitute candidates must meet the following core requirements:

Mandatory Compatibility Parameters:

Voltage - DC Reverse (Vr) (Max): 100 V minimum
Current - Average Rectified (Io): 3 A minimum
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant

Secondary Electrical Parameters (allowable variation):

Voltage - Forward (Vf) (Max) @ If: Within standard rectifier diode tolerances
Reverse Recovery Time (trr): Fast recovery (≤500 ns) or standard recovery (>500 ns) variants acceptable
Current - Reverse Leakage @ Vr: Within specified limits at rated voltage
Operating Temperature Range: Must support minimum -50°C to 150°C junction temperature

Parts that exceed the 100 V reverse voltage rating (such as STTH302S at 200 V) are listed as substitutes because they maintain full backward compatibility while providing enhanced voltage margin. Parts with standard recovery characteristics are acceptable alternatives where fast recovery is not a circuit requirement.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ 3A [mV]	trr [ns]	Ir @ Vr [µA]	Package	Product Status	Inventory [Pcs]
ES3B	onsemi	100	3	950	20	10 @ 100V	DO-214AB, SMC	Not For New Designs	10400
ER3B_R1_00001	Panjit International Inc.	100	3	950	35	1 @ 100V	DO-214AB, SMC	Active	953
ES3B-13-F	Diodes Incorporated	100	3	900	25	10 @ 100V	DO-214AB, SMC	Active	10100
ES3B-E3/57T	Vishay General Semiconductor - Diodes Division	100	3	900	30	10 @ 100V	DO-214AB, SMC	Active	5730
S3B	Diotec Semiconductor	100	3	1150	1500	5 @ 100V	DO-214AB, SMC	Active	3859
S3B-13-F	Diodes Incorporated	100	3	1150	>500	10 @ 100V	DO-214AB, SMC	Active	30100
S3B-TP	Micro Commercial Co	100	3	1200	>500	10 @ 100V	DO-214AB, SMC	Not For New Designs	8818
STTH302S	STMicroelectronics	200	3	950	35	3 @ 200V	DO-214AB, SMC	Active	25200

Engineering Selection Recommendations

Direct Equivalents (100 V, Fast Recovery, Active Status):

The parts ER3B_R1_00001, ES3B-13-F, and ES3B-E3/57T are direct functional equivalents to the ES3B. All three maintain the 100 V reverse voltage rating, 3 A current rating, and fast recovery characteristics (≤500 ns). These parts are classified as Active products, making them suitable for new designs and long-term availability. ES3B-13-F and ES3B-E3/57T offer forward voltage characteristics (900 mV) superior to the original ES3B (950 mV), resulting in lower power dissipation. ER3B_R1_00001 matches the original forward voltage specification exactly while providing superior reverse leakage characteristics (1 µA versus 10 µA).

Standard Recovery Alternatives (100 V, Active Status):

The parts S3B and S3B-13-F are functionally compatible substitutes with standard recovery characteristics (>500 ns). These parts are suitable for applications where fast recovery is not a circuit requirement. S3B-13-F offers the highest inventory availability (30100 pcs) and extended operating temperature range (-65°C to 150°C). Forward voltage is higher (1150 mV) compared to the ES3B, resulting in increased power dissipation in high-current applications.

Enhanced Voltage Rating Alternative (200 V, Active Status):

The STTH302S from STMicroelectronics provides a 200 V reverse voltage rating while maintaining 3 A current capacity and fast recovery characteristics. This part is a backward-compatible substitute offering enhanced voltage margin for applications requiring additional safety headroom. The part is in Active status with substantial inventory (25200 pcs).

Legacy Status Consideration:

The S3B-TP is classified as "Not For New Designs" status, matching the ES3B. While electrically compatible, this part should not be selected for new circuit designs due to its legacy classification.

Frequently Asked Questions (FAQ)

Q: Can I use a 200 V rated diode (STTH302S) in place of the 100 V ES3B?

A: Yes. The STTH302S is a backward-compatible substitute. A higher voltage rating provides additional reverse voltage margin without affecting circuit operation at 100 V or below. The 200 V rating ensures the diode will not be overstressed in applications designed for 100 V operation.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes (trr ≤500 ns) exhibit shorter reverse recovery time, reducing switching losses and electromagnetic interference in high-frequency applications. Standard recovery diodes (trr >500 ns) are suitable for lower-frequency rectification where recovery time is not a limiting factor. The ES3B specifies fast recovery (20 ns), but standard recovery alternatives (S3B, S3B-13-F) are electrically compatible for applications not requiring fast switching performance.

Q: Are all substitute parts available in the same packaging?

A: All listed substitutes use the DO-214AB (SMC) surface mount package, ensuring mechanical and thermal compatibility. Packaging variants differ only in tape format (Cut Tape, Tape & Reel, or Digi-Reel), which affects handling and assembly but not electrical performance or board-level compatibility.

Q: Which substitute offers the lowest forward voltage drop?

A: The ES3B-13-F and ES3B-E3/57T both specify 900 mV forward voltage at 3 A, compared to 950 mV for the original ES3B. This 50 mV reduction results in lower power dissipation. The ER3B_R1_00001 matches the original 950 mV specification.

Q: What is the significance of RoHS3 compliance?

A: All listed parts are RoHS3 compliant, confirming they meet Restriction of Hazardous Substances regulations. This ensures compatibility with modern manufacturing processes and environmental standards. The ES3B and all substitutes meet this requirement.

Q: Can I substitute the ES3B with a part rated for lower current?

A: No. All substitute parts must maintain the 3 A average rectified current rating or higher. Using a lower-rated diode will result in thermal overstress and premature failure.

Q: Which substitute has the best reverse leakage characteristics?

A: The ER3B_R1_00001 specifies 1 µA reverse leakage at 100 V, compared to 10 µA for the ES3B. Lower reverse leakage reduces standby current and improves circuit efficiency in applications sensitive to leakage current.

Q: Is the ES3B-13-F identical to the ES3B?

A: The ES3B-13-F is functionally equivalent with improved specifications. Both are 100 V, 3 A fast recovery diodes in DO-214AB packaging. The ES3B-13-F offers lower forward voltage (900 mV versus 950 mV) and is classified as Active status, making it preferable for new designs.

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