ES3A M6G Equivalent & Substitute Parts

Part Overview

The ES3A M6G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 50 V DC reverse voltage and 3 A average rectified current in a DO-214AB (SMC) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

The ES3A M6G features fast recovery characteristics with a reverse recovery time of 35 ns, forward voltage of 950 mV at 3 A, and operates across a junction temperature range of -55°C to 150°C. The component is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	50	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 3 A	mV
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	10	µA @ 50 V
Capacitance @ Vr, F	45	pF @ 4V, 1MHz
Package / Case	DO-214AB, SMC	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the ES3A M6G is determined by the following critical parameters:

Electrical Parameters:

Voltage - DC Reverse (Vr) (Max): 50 V minimum
Current - Average Rectified (Io): 3 A minimum
Voltage - Forward (Vf) (Max) @ If: Must not exceed 950 mV at rated current
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns or lower preferred for fast recovery applications

Mechanical Parameters:

Package / Case: DO-214AB (SMC) surface mount package
Mounting Type: Surface Mount
Operating Temperature - Junction: -55°C to 150°C minimum range

Compliance Parameters:

RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitute parts are grouped into two categories:

Parametric Equivalents: Parts with identical electrical specifications and package type, differing only in product status or manufacturer variant designation.

Similar Parts: Components meeting the core electrical requirements (50 V, 3 A, fast recovery, DO-214AB package) but with variations in forward voltage, reverse recovery time, reverse leakage current, or capacitance characteristics. These parts are suitable for applications where the ES3A M6G specifications are not exceeded.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) [mV]	Speed	trr [ns]	Ir @ Vr [µA]	Package	Product Status
ES3A M6G	Taiwan Semiconductor Corporation	50	3	950 @ 3A	Fast Recovery ≤ 500ns	35	10 @ 50V	DO-214AB (SMC)	Discontinued
ES3A	Taiwan Semiconductor Corporation	50	3	950 @ 3A	Fast Recovery ≤ 500ns	35	10 @ 50V	DO-214AB (SMC)	Active
ES3AH	Taiwan Semiconductor Corporation	50	3	950 @ 3A	Fast Recovery ≤ 500ns	35	10 @ 50V	DO-214AB (SMC)	Active (AEC-Q101)
CSFC301-G	Comchip Technology	50	3	950 @ 3A	Fast Recovery ≤ 500ns	35	5 @ 50V	DO-214AB (SMC)	Active
ES3A-13-F	Diodes Incorporated	50	3	900 @ 3A	Fast Recovery ≤ 500ns	25	10 @ 50V	DO-214AB (SMC)	Active
RS3A-13-F	Diodes Incorporated	50	3	1300 @ 3A	Fast Recovery ≤ 500ns	150	5 @ 50V	DO-214AB (SMC)	Active
RS3A-E3/57T	Vishay General Semiconductor - Diodes Division	50	3	1300 @ 2.5A	Fast Recovery ≤ 500ns	150	10 @ 50V	DO-214AB (SMC)	Active
RS3A-E3/9AT	Vishay General Semiconductor - Diodes Division	50	3	1300 @ 2.5A	Fast Recovery ≤ 500ns	150	10 @ 50V	DO-214AB (SMC)	Active
RS3A-M3/57T	Vishay General Semiconductor - Diodes Division	50	3	1300 @ 2.5A	Fast Recovery ≤ 500ns	150	10 @ 50V	DO-214AB (SMC)	Active
CGRC501-G	Comchip Technology	50	5	1150 @ 5A	Standard Recovery > 500ns	—	10 @ 50V	DO-214AB (SMC)	Active
ES3AB-13-F	Diodes Incorporated	50	3	900 @ 3A	Fast Recovery ≤ 500ns	25	10 @ 50V	DO-214AA (SMB)	Active

Engineering Selection Recommendations

Primary Substitutes (Parametric Equivalents):

The ES3A (base part number, Active status) from Taiwan Semiconductor Corporation is the direct parametric equivalent to the discontinued ES3A M6G. This part maintains identical electrical specifications and package configuration with current product availability.

The ES3AH variant from Taiwan Semiconductor Corporation provides the same electrical performance with AEC-Q101 automotive qualification. Selection of ES3AH is appropriate for applications requiring automotive-grade reliability and traceability.

Secondary Substitutes (Electrical Equivalents with Minor Variations):

The CSFC301-G from Comchip Technology meets all core electrical requirements with identical voltage, current, and recovery speed ratings. The reverse leakage current is lower (5 µA versus 10 µA), which represents an improvement in leakage characteristics. This part is suitable for direct substitution in applications where the ES3A M6G specifications define the design envelope.

The ES3A-13-F from Diodes Incorporated provides superior performance characteristics with lower forward voltage (900 mV versus 950 mV) and faster reverse recovery time (25 ns versus 35 ns). The package designation is SMC (DO-214AB equivalent). This part is suitable for applications where improved switching performance is beneficial.

Conditional Substitutes (Acceptable with Design Verification):

The RS3A-13-F, RS3A-E3/57T, RS3A-E3/9AT, and RS3A-M3/57T variants from Diodes Incorporated and Vishay General Semiconductor maintain the 50 V, 3 A core ratings and fast recovery speed classification. However, these parts exhibit higher forward voltage (1300 mV at 2.5 A or 3 A) and longer reverse recovery time (150 ns). These characteristics represent a trade-off in switching performance and power dissipation. These parts are suitable for applications where the higher forward voltage and recovery time do not exceed design margins.

Not Recommended:

The CGRC501-G from Comchip Technology, while rated for 50 V, is specified for 5 A average rectified current and standard recovery speed (>500 ns). This part exceeds the current rating of the ES3A M6G and does not meet the fast recovery speed requirement. Selection of this part is not appropriate for direct substitution.

The ES3AB-13-F from Diodes Incorporated uses the DO-214AA (SMB) package, which differs from the DO-214AB (SMC) package of the ES3A M6G. Package incompatibility with existing PCB layouts precludes direct substitution without board redesign.

Frequently Asked Questions (FAQ)

Q: Can the ES3A (base part number) be used as a direct replacement for the discontinued ES3A M6G?

A: Yes. The ES3A from Taiwan Semiconductor Corporation is a parametric equivalent with identical electrical specifications (50 V, 3 A, 950 mV forward voltage, 35 ns reverse recovery time) and DO-214AB (SMC) package configuration. The primary difference is product status (Active versus Discontinued).

Q: What is the difference between the ES3A and ES3AH variants?

A: Both parts share identical electrical specifications and package type. The ES3AH carries AEC-Q101 automotive qualification and is designated as an automotive-grade component. Selection of ES3AH is appropriate for applications requiring automotive reliability standards and qualification documentation.

Q: Why do some substitute parts have higher forward voltage specifications?

A: Forward voltage variation reflects differences in semiconductor material composition, doping profiles, and manufacturing processes across different manufacturers. Parts such as RS3A variants from Vishay and Diodes Incorporated exhibit forward voltage of 1300 mV at rated current, compared to 950 mV for the ES3A M6G. Higher forward voltage results in increased power dissipation during conduction. Design verification is required to confirm that the higher forward voltage does not exceed thermal or efficiency margins in the target application.

Q: What does reverse recovery time (trr) represent, and why does it vary among substitutes?

A: Reverse recovery time is the interval required for a diode to transition from forward conduction to reverse blocking when the applied voltage reverses polarity. Shorter reverse recovery time (35 ns for ES3A M6G, 25 ns for ES3A-13-F) indicates faster switching response and lower switching losses. Longer reverse recovery time (150 ns for RS3A variants) results in higher switching losses and slower transient response. Selection depends on the switching frequency and efficiency requirements of the application.

Q: Can the CGRC501-G (5 A rated) be used in place of the ES3A M6G (3 A rated)?

A: The CGRC501-G is not recommended as a direct substitute. Although both parts are rated for 50 V reverse voltage and use the DO-214AB (SMC) package, the CGRC501-G is specified for 5 A average rectified current and standard recovery speed (>500 ns). The ES3A M6G is specified for 3 A and fast recovery (≤500 ns). The higher current rating and slower recovery speed represent different design characteristics. Additionally, the CGRC501-G does not meet the fast recovery speed requirement of the ES3A M6G.

Q: What is the significance of the DO-214AB (SMC) package designation?

A: DO-214AB is the JEDEC package outline designation for a surface mount rectifier diode in SMC (Surface Mount Case) form factor. This package is physically and electrically compatible with PCB layouts designed for DO-214AB components. Parts designated with alternative package types (such as DO-214AA/SMB for the ES3AB-13-F) are not mechanically compatible with existing PCB designs and require board redesign for implementation.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this reference are ROHS3 compliant and carry unlimited moisture sensitivity level (MSL 1), matching the compliance profile of the ES3A M6G.

Q: Which substitute part offers the best performance improvement over the ES3A M6G?

A: The ES3A-13-F from Diodes Incorporated provides measurable performance improvements with lower forward voltage (900 mV versus 950 mV at 3 A) and faster reverse recovery time (25 ns versus 35 ns). These characteristics result in reduced power dissipation and improved switching response. The ES3A-13-F maintains identical voltage and current ratings, fast recovery speed classification, and DO-214AB (SMC) package compatibility.

Q: Can reverse leakage current variation affect circuit performance?

A: Reverse leakage current represents the small DC current flowing through the diode in the reverse-biased state. The ES3A M6G specifies 10 µA at 50 V. Some substitutes such as CSFC301-G and RS3A-13-F specify lower leakage current (5 µA). Lower reverse leakage current is generally beneficial, reducing standby power consumption and improving circuit efficiency. Higher leakage current does not preclude substitution unless the application has specific leakage current constraints.

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