ES2D R5G Equivalent & Substitute Parts

Part Overview

The ES2D R5G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 2 A average rectified current in a DO-214AA (SMB) surface mount package. This component is classified as a fast recovery diode with a reverse recovery time of 35 nanoseconds, suitable for standard rectification applications requiring moderate voltage and current ratings.

The ES2D R5G is currently discontinued at DiGi Electronics. Equivalent and substitute parts are available from multiple manufacturers with identical or comparable electrical characteristics and the same surface mount packaging, enabling direct functional replacement in circuit designs.

Substiute Parts

ES2D R5G
Taiwan Semiconductor CorporationIn Stock: 744ES2D R5G Datasheet
ES2D R5G
Current Part
ES2D
Good-Ark SemiconductorIn Stock: 89468ES2D Datasheet
ES2D
Parametric Equivalent
ES2DH
Taiwan Semiconductor CorporationIn Stock: 3967ES2DH Datasheet
ES2DH
Parametric Equivalent
CSFB203-G
Comchip TechnologyIn Stock: 954CSFB203-G Datasheet
CSFB203-G
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ER1D-LTP
Micro Commercial CoIn Stock: 4629ER1D-LTP Datasheet
ER1D-LTP
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ER2D-LTP
Micro Commercial CoIn Stock: 198490ER2D-LTP Datasheet
ER2D-LTP
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ER3DB-TP
Micro Commercial CoIn Stock: 2241ER3DB-TP Datasheet
ER3DB-TP
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ES2D-13-F
Diodes IncorporatedIn Stock: 130979ES2D-13-F Datasheet
ES2D-13-F
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ES2DA-13-F
Diodes IncorporatedIn Stock: 56797ES2DA-13-F Datasheet
ES2DA-13-F
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ES2DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 32316ES2DHE3_A/H Datasheet
ES2DHE3_A/H
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ES2DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 16060ES2DHE3_A/I Datasheet
ES2DHE3_A/I
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ES2DHE3J_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1165ES2DHE3J_A/H Datasheet
ES2DHE3J_A/H
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ESH2D-E3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10210ESH2D-E3/52T Datasheet
ESH2D-E3/52T
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ESH2D-E3/5BT
Vishay General Semiconductor - Diodes DivisionIn Stock: 10400ESH2D-E3/5BT Datasheet
ESH2D-E3/5BT
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MURS120-13-F
Diodes IncorporatedIn Stock: 49028MURS120-13-F Datasheet
MURS120-13-F
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MURS120-E3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 25752MURS120-E3/52T Datasheet
MURS120-E3/52T
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MURS120-E3/5BT
Vishay General Semiconductor - Diodes DivisionIn Stock: 2126MURS120-E3/5BT Datasheet
MURS120-E3/5BT
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MURS120/2
Vishay General Semiconductor - Diodes DivisionIn Stock: 2045MURS120/2 Datasheet
MURS120/2
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MURS120HE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 209251MURS120HE3_A/H Datasheet
MURS120HE3_A/H
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MURS120HE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 978MURS120HE3_A/I Datasheet
MURS120HE3_A/I
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RS2D-13-F
Diodes IncorporatedIn Stock: 53490RS2D-13-F Datasheet
RS2D-13-F
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RS2DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 813RS2DHE3_A/I Datasheet
RS2DHE3_A/I
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S2D-13-F
Diodes IncorporatedIn Stock: 30188S2D-13-F Datasheet
S2D-13-F
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S2DA-13-F
Diodes IncorporatedIn Stock: 19866S2DA-13-F Datasheet
S2DA-13-F
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S2DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 792S2DHE3_A/H Datasheet
S2DHE3_A/H
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S2DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 948S2DHE3_A/I Datasheet
S2DHE3_A/I
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S3DB-TP
Micro Commercial CoIn Stock: 6935S3DB-TP Datasheet
S3DB-TP
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STTH1R02U
STMicroelectronicsIn Stock: 16815STTH1R02U Datasheet
STTH1R02U
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STTH2R02U
STMicroelectronicsIn Stock: 43030STTH2R02U Datasheet
STTH2R02U
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STTH2R02UY
STMicroelectronicsIn Stock: 60377STTH2R02UY Datasheet
STTH2R02UY
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STTH4R02U
STMicroelectronicsIn Stock: 20200STTH4R02U Datasheet
STTH4R02U
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STTH4R02UY
STMicroelectronicsIn Stock: 109776STTH4R02UY Datasheet
STTH4R02UY
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ER2D_R1_00001
Panjit International Inc.In Stock: 20493ER2D_R1_00001 Datasheet
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Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 2 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 2 A mV
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V
Capacitance @ Vr, F 25 pF @ 4V, 1MHz
Package / Case DO-214AA, SMB
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the ES2D R5G are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalents possess identical electrical specifications across all critical parameters: 200 V reverse voltage, 2 A average rectified current, 950 mV forward voltage drop at 2 A, 35 ns reverse recovery time, and DO-214AA (SMB) surface mount packaging. These parts are direct functional replacements with no circuit redesign required.

Similar Parts share the same 200 V reverse voltage rating and DO-214AA (SMB) package but differ in one or more of the following parameters: average rectified current (1 A or 3 A), forward voltage drop (900 mV or 920 mV), reverse recovery time (20 ns or 25 ns), reverse leakage current (5 µA or 10 µA), or junction capacitance. These parts are suitable for substitution only when the application circuit can accommodate the parameter variations.

The key parameters determining substitution eligibility are:

  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2 A (for parametric equivalents)
  • Package / Case: DO-214AA, SMB
  • Mounting Type: Surface Mount
  • Operating Temperature Range: -55°C to 150°C (minimum)

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [mV] trr [ns] Ir @ Vr [µA] C @ Vr [pF] Package Product Status
ES2D R5G Taiwan Semiconductor Corporation 200 2 950 @ 2A 35 10 @ 200V 25 @ 4V, 1MHz DO-214AA (SMB) Discontinued
ES2D Good-Ark Semiconductor 200 2 950 @ 2A 35 10 @ 200V 25 @ 4V, 1MHz DO-214AA (SMB) Active
ES2DH Taiwan Semiconductor Corporation 200 2 950 @ 2A 35 10 @ 200V 25 @ 4V, 1MHz DO-214AA (SMB) Active
CSFB203-G Comchip Technology 200 2 920 @ 2A 35 5 @ 200V DO-214AA (SMB) Active
ER1D-LTP Micro Commercial Co 200 1 950 @ 1A 35 5 @ 200V DO-214AA (SMB) Active
ER2D-LTP Micro Commercial Co 200 2 950 @ 2A 35 5 @ 200V 15 @ 4V, 1MHz DO-214AA (SMB) Active
ER3DB-TP Micro Commercial Co 200 3 950 @ 3A 35 5 @ 200V 45 @ 4V, 1MHz DO-214AA (SMB) Active
ES2D-13-F Diodes Incorporated 200 2 920 @ 2A 25 5 @ 200V 25 @ 4V, 1MHz DO-214AA (SMB) Active
ES2DA-13-F Diodes Incorporated 200 2 920 @ 2A 25 5 @ 200V 25 @ 4V, 1MHz DO-214AC (SMA) Active
ES2DHE3_A/H Vishay General Semiconductor - Diodes Division 200 2 900 @ 2A 20 10 @ 200V 18 @ 4V, 1MHz DO-214AA (SMB) Active
ES2DHE3_A/I Vishay General Semiconductor - Diodes Division 200 2 900 @ 2A 20 10 @ 200V 18 @ 4V, 1MHz DO-214AA (SMB) Active

Engineering Selection Recommendations

Parametric Equivalents for Direct Replacement:

The ES2D from Good-Ark Semiconductor and ES2DH from Taiwan Semiconductor Corporation are parametric equivalents with identical electrical specifications to the ES2D R5G. Both parts are in active production status and provide direct functional replacement without circuit modification. The ES2DH variant includes AEC-Q101 automotive qualification, suitable for applications requiring automotive-grade components.

Active Substitutes with Comparable Performance:

ER2D-LTP from Micro Commercial Co matches the 200 V, 2 A rating and 35 ns reverse recovery time. This part exhibits lower reverse leakage current (5 µA versus 10 µA) and reduced junction capacitance (15 pF versus 25 pF), resulting in improved switching characteristics. The extended operating temperature range (-65°C to 175°C) provides additional thermal margin.

ES2D-13-F from Diodes Incorporated maintains the 200 V, 2 A specification with improved reverse recovery time (25 ns versus 35 ns) and lower forward voltage drop (920 mV versus 950 mV), reducing power dissipation. This part is available in high inventory quantities.

ES2DHE3_A/H and ES2DHE3_A/I from Vishay General Semiconductor offer superior performance with 20 ns reverse recovery time, 900 mV forward voltage drop, and AEC-Q101 automotive qualification. These variants are suitable for applications prioritizing switching speed and thermal efficiency.

Current-Rated Alternatives:

ER1D-LTP (1 A rating) is suitable only for applications with maximum current requirements below 1 A. ER3DB-TP (3 A rating) accommodates higher current demands and provides design margin for future load increases.

Package Consideration:

ES2DA-13-F uses DO-214AC (SMA) packaging instead of DO-214AA (SMB). This part is electrically equivalent but requires PCB layout modification due to different footprint dimensions.

All recommended substitutes maintain ROHS3 compliance, MSL 1 rating, and surface mount mounting type consistent with the original ES2D R5G specification.

Frequently Asked Questions (FAQ)

Q: Can ES2D from Good-Ark Semiconductor directly replace ES2D R5G in existing designs?

A: Yes. The ES2D from Good-Ark Semiconductor is a parametric equivalent with identical voltage rating (200 V), current rating (2 A), forward voltage drop (950 mV @ 2 A), reverse recovery time (35 ns), and DO-214AA (SMB) package. No circuit redesign or PCB modification is required.

Q: What is the difference between ES2DH and ES2D R5G?

A: ES2DH is electrically identical to ES2D R5G with the same 200 V, 2 A, 950 mV, and 35 ns specifications. The primary difference is ES2DH includes AEC-Q101 automotive qualification and is supplied in Tape & Reel packaging, whereas ES2D R5G is standard grade. Both use DO-214AA (SMB) packaging.

Q: Why would ER2D-LTP be preferred over ES2D R5G?

A: ER2D-LTP offers three performance advantages: lower reverse leakage current (5 µA versus 10 µA), reduced junction capacitance (15 pF versus 25 pF), and extended operating temperature range (-65°C to 175°C versus -55°C to 150°C). These characteristics improve switching performance and thermal margin. The 200 V, 2 A, 35 ns specifications remain identical.

Q: Is ES2DA-13-F compatible with ES2D R5G?

A: ES2DA-13-F is electrically compatible but uses DO-214AC (SMA) packaging instead of DO-214AA (SMB). The different package footprint requires PCB layout modification. Electrical specifications are equivalent with 200 V, 2 A rating and improved 25 ns reverse recovery time.

Q: Can ER1D-LTP replace ES2D R5G?

A: ER1D-LTP is suitable only for applications where the maximum average rectified current does not exceed 1 A. The part shares the 200 V reverse voltage rating and DO-214AA (SMB) package but is rated for half the current capacity. Use only if circuit current requirements are confirmed below 1 A.

Q: What is the advantage of ES2DHE3_A/H over ES2D R5G?

A: ES2DHE3_A/H provides superior switching performance with 20 ns reverse recovery time (versus 35 ns) and lower forward voltage drop (900 mV versus 950 mV), reducing power dissipation by approximately 5%. It includes AEC-Q101 automotive qualification and maintains identical 200 V, 2 A ratings in DO-214AA (SMB) packaging.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, consistent with the original ES2D R5G specification.

Q: What packaging options are available for 200 V, 2 A rectifier diodes?

A: The primary packaging for this specification class is DO-214AA (SMB), used by all listed substitutes except ES2DA-13-F. ES2DA-13-F uses DO-214AC (SMA) packaging, which has a different footprint and requires PCB modification. All packages are surface mount types suitable for automated assembly.

Q: Which substitute offers the best availability?

A: ER2D-LTP from Micro Commercial Co has the highest inventory level at 198,400 pieces. ES2D-13-F from Diodes Incorporated is also well-stocked at 130,906 pieces. Both parts are in active production with immediate availability.

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