ES2C-TP General Purpose Rectifier Diode Equivalent & Substitute Parts

Part Overview

The ES2C-TP is a general purpose rectifier diode manufactured by Micro Commercial Co, rated for 150 V DC reverse voltage and 2 A average rectified current in a DO-214AC (SMA) surface mount package. This component is classified as obsolete, indicating that direct replacement with active production alternatives is necessary for new designs and ongoing procurement requirements. The ES2C-TP operates across a junction temperature range of -50°C to 150°C and features fast recovery characteristics with a reverse recovery time of 50 ns. Equivalent and substitute parts are available from active manufacturers including Diodes Incorporated and Vishay General Semiconductor - Diodes Division, offering compatible electrical performance and packaging.

Substiute Parts

ES2C-TP
Micro Commercial CoIn Stock: 3400ES2C-TP Datasheet
ES2C-TP
Current Part
ES1C-13-F
Diodes IncorporatedIn Stock: 10390ES1C-13-F Datasheet
ES1C-13-F
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ES1C-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 6358ES1C-E3/5AT Datasheet
ES1C-E3/5AT
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ES1C-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 48345ES1C-E3/61T Datasheet
ES1C-E3/61T
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ES1C-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1079ES1C-M3/5AT Datasheet
ES1C-M3/5AT
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ES1C-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 14816ES1C-M3/61T Datasheet
ES1C-M3/61T
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ES1CHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 47563ES1CHE3_A/H Datasheet
ES1CHE3_A/H
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ES1CHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 808ES1CHE3_A/I Datasheet
ES1CHE3_A/I
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ESH1C-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 10405ESH1C-E3/5AT Datasheet
ESH1C-E3/5AT
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ESH1C-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 15747ESH1C-E3/61T Datasheet
ESH1C-E3/61T
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SBR1U150SA-13
Diodes IncorporatedIn Stock: 67863SBR1U150SA-13 Datasheet
SBR1U150SA-13
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SBR1U150SAQ-13
Diodes IncorporatedIn Stock: 3875SBR1U150SAQ-13 Datasheet
SBR1U150SAQ-13
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SBR2U150SA-13
Diodes IncorporatedIn Stock: 30378SBR2U150SA-13 Datasheet
SBR2U150SA-13
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U1C-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 980U1C-E3/5AT Datasheet
U1C-E3/5AT
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U1C-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 12267U1C-E3/61T Datasheet
U1C-E3/61T
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UH1CHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1126UH1CHE3_A/H Datasheet
UH1CHE3_A/H
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UH1CHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1069UH1CHE3_A/I Datasheet
UH1CHE3_A/I
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 150 V
Current - Average Rectified (Io) 2 A
Voltage - Forward (Vf) (Max) @ If 975 mV @ 2 A mV
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 150 V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) -
Package / Case DO-214AC, SMA -
Mounting Type Surface Mount -
Operating Temperature - Junction -50 to 150 °C
Technology Standard -
RoHS Status ROHS3 Compliant -
Moisture Sensitivity Level (MSL) 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitution of the ES2C-TP is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 150 V minimum
  • Package / Case: DO-214AC, SMA surface mount
  • Mounting Type: Surface Mount
  • Technology: Standard or Super Barrier rectifier technology
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level: 1 (Unlimited)

Current Rating Consideration: The ES2C-TP is rated for 2 A average rectified current. Substitute parts rated at 1 A are electrically compatible for applications requiring ≤ 1 A operation. Parts with 1 A ratings operate within the same voltage class and package specification but with reduced current capacity. Selection of 1 A substitutes is appropriate only when circuit design confirms maximum current requirements do not exceed 1 A.

Speed and Recovery Characteristics: All listed substitute parts maintain fast recovery characteristics (≤ 500ns, > 200mA) consistent with the ES2C-TP specification. Reverse recovery time values of 25 ns in substitute parts represent improved performance relative to the 50 ns specification of the main part.

Temperature Range: Substitute parts from Vishay and Diodes Incorporated operate across -55°C to 150°C or -55°C to 175°C junction temperature ranges, which encompass the ES2C-TP operating range of -50°C to 150°C.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [mV] trr [ns] Ir @ Vr [µA] Package Temp Range [°C] Status
ES2C-TP Micro Commercial Co 150 2 975 @ 2A 50 5 @ 150V DO-214AC -50 to 150 Obsolete
ES1C-13-F Diodes Incorporated 150 1 920 @ 1A 25 5 @ 150V DO-214AC -55 to 150 Active
ES1C-E3/5AT Vishay General Semiconductor 150 1 920 @ 1A 25 5 @ 150V DO-214AC -55 to 150 Active
ES1C-E3/61T Vishay General Semiconductor 150 1 920 @ 1A 25 5 @ 150V DO-214AC -55 to 150 Active
ES1C-M3/5AT Vishay General Semiconductor 150 1 920 @ 1A 25 5 @ 150V DO-214AC -55 to 150 Active
ES1C-M3/61T Vishay General Semiconductor 150 1 920 @ 1A 25 5 @ 150V DO-214AC -55 to 150 Active
ES1CHE3_A/H Vishay General Semiconductor 150 1 920 @ 1A 25 5 @ 150V DO-214AC -55 to 150 Active
ES1CHE3_A/I Vishay General Semiconductor 150 1 920 @ 1A 25 5 @ 150V DO-214AC -55 to 150 Active
ESH1C-E3/5AT Vishay General Semiconductor 150 1 900 @ 1A 25 1 @ 150V DO-214AC -55 to 175 Active
ESH1C-E3/61T Vishay General Semiconductor 150 1 900 @ 1A 25 1 @ 150V DO-214AC -55 to 175 Active
SBR1U150SA-13 Diodes Incorporated 150 1 700 @ 1A 25 100 @ 150V DO-214AC -65 to 150 Active

Engineering Selection Recommendations

For Direct Replacement (Current ≤ 1 A Applications):

The ES1C series parts (ES1C-13-F, ES1C-E3/5AT, ES1C-E3/61T, ES1C-M3/5AT, ES1C-M3/61T) from Diodes Incorporated and Vishay General Semiconductor provide direct functional equivalence to the ES2C-TP for applications where maximum rectified current does not exceed 1 A. These parts are active production items with identical 150 V reverse voltage rating, DO-214AC package specification, and fast recovery characteristics. All ES1C variants are ROHS3 compliant with MSL 1 rating.

For Automotive Applications:

The ES1CHE3_A/H and ES1CHE3_A/I variants from Vishay are qualified to AEC-Q101 automotive standard and are suitable for automotive-grade applications. The SBR1U150SA-13 from Diodes Incorporated is also AEC-Q101 qualified and offers Super Barrier technology with reduced forward voltage (700 mV @ 1 A) and lower reverse leakage current (100 µA @ 150 V).

For Enhanced Temperature Performance:

The ESH1C-E3/5AT and ESH1C-E3/61T parts from Vishay extend the maximum junction temperature to 175°C, compared to 150°C for standard ES1C variants. These parts also feature lower reverse leakage current (1 µA @ 150 V) and reduced forward voltage (900 mV @ 1 A).

For Superior Forward Voltage Performance:

The SBR1U150SA-13 Super Barrier rectifier delivers the lowest forward voltage specification at 700 mV @ 1 A, resulting in reduced power dissipation compared to standard rectifier technology. This part is suitable for applications prioritizing efficiency and thermal management.

Product Status Consideration:

All recommended substitute parts maintain active production status, ensuring long-term availability and supply chain continuity. The ES2C-TP obsolete status necessitates transition to one of these active alternatives for new designs and production procurement.

Frequently Asked Questions (FAQ)

Q: Can the ES1C series 1 A parts directly replace the ES2C-TP 2 A part?

A: The ES1C series parts are electrically compatible with the ES2C-TP for applications where the maximum average rectified current requirement does not exceed 1 A. If the circuit design requires 2 A operation, the reduced current rating of ES1C parts makes them unsuitable. Circuit analysis must confirm that actual operating current remains within the 1 A specification of the substitute part.

Q: What is the difference between ES1C and ESH1C series parts?

A: Both series maintain identical 150 V reverse voltage and 1 A current ratings in DO-214AC packages. The ESH1C series features lower reverse leakage current (1 µA versus 5 µA @ 150 V), lower forward voltage (900 mV versus 920 mV @ 1 A), and extended maximum junction temperature (175°C versus 150°C). ESH1C parts are suitable for applications requiring improved thermal performance or reduced leakage characteristics.

Q: How does the SBR1U150SA-13 Super Barrier technology differ from standard rectifier technology?

A: The SBR1U150SA-13 employs Super Barrier rectifier technology, which delivers significantly lower forward voltage (700 mV @ 1 A) compared to standard rectifiers (920 mV @ 1 A for ES1C series). This technology reduces power dissipation and heat generation. The SBR1U150SA-13 exhibits higher reverse leakage current (100 µA @ 150 V) compared to standard types, which is a characteristic trade-off of Super Barrier technology.

Q: Are all substitute parts ROHS3 compliant?

A: All listed substitute parts are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level, matching the environmental compliance profile of the ES2C-TP.

Q: Which substitute part offers the best availability?

A: The SBR1U150SA-13 from Diodes Incorporated has the highest inventory level at 67,818 pieces. The ES1CHE3_A/H from Vishay has 47,474 pieces in stock. The ES1C-E3/61T from Vishay has 48,300 pieces available. These three parts represent the highest stock levels among active alternatives.

Q: Can I use automotive-qualified parts in non-automotive applications?

A: Automotive-qualified parts (ES1CHE3_A/H, ES1CHE3_A/I, SBR1U150SA-13) are suitable for use in non-automotive applications. Automotive qualification indicates additional testing and reliability standards that exceed standard commercial requirements, making these parts acceptable for general purpose applications.

Q: What packaging options are available for substitute parts?

A: All substitute parts are supplied in DO-214AC (SMA) surface mount package, matching the ES2C-TP package specification. Packaging formats vary by supplier and include Tape & Reel (TR) and Cut Tape (CT) & Digi-Reel® options. Specific packaging format selection depends on procurement and assembly requirements.

Q: How do reverse recovery time specifications affect circuit performance?

A: The ES2C-TP specifies 50 ns reverse recovery time, while all substitute parts specify 25 ns. Faster reverse recovery time reduces switching losses and improves efficiency in high-frequency rectification applications. The improved 25 ns specification of substitute parts represents enhanced performance relative to the original part.

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