ES2C M4G Equivalent & Substitute Parts

Part Overview

The ES2C M4G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 150 V DC reverse voltage and 2 A average rectified current in a surface mount DO-214AA (SMB) package. This part is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity.

Substiute Parts

ES2C M4G
Taiwan Semiconductor CorporationIn Stock: 1059ES2C M4G Datasheet
ES2C M4G
Current Part
ES2C
Diotec SemiconductorIn Stock: 43731ES2C Datasheet
ES2C
Parametric Equivalent
ES2C R5G
Taiwan Semiconductor CorporationIn Stock: 1186ES2C R5G Datasheet
ES2C R5G
Parametric Equivalent
ES2CH
Taiwan Semiconductor CorporationIn Stock: 1046ES2CH Datasheet
ES2CH
Parametric Equivalent
ES2C-13-F
Diodes IncorporatedIn Stock: 3099ES2C-13-F Datasheet
ES2C-13-F
Similar
ES2CHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 758ES2CHE3_A/H Datasheet
ES2CHE3_A/H
Similar
ES2CHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 853ES2CHE3_A/I Datasheet
ES2CHE3_A/I
Similar
ESH2C-E3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10483ESH2C-E3/52T Datasheet
ESH2C-E3/52T
Similar
ESH2C-E3/5BT
Vishay General Semiconductor - Diodes DivisionIn Stock: 10148ESH2C-E3/5BT Datasheet
ESH2C-E3/5BT
Similar
ER2C_R1_00001
Panjit International Inc.In Stock: 2984ER2C_R1_00001 Datasheet
ER2C_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 150 V
Current - Average Rectified (Io) 2 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 2 A
Speed Classification Fast Recovery ≤ 500 ns, > 200 mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 150 V
Package / Case DO-214AA, SMB
Mounting Type Surface Mount
Operating Temperature - Junction -55°C ~ 150°C
Technology Standard
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the ES2C M4G is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 2 A
  • Package / Case: DO-214AA, SMB
  • Mounting Type: Surface Mount
  • Technology: Standard
  • RoHS Status: ROHS3 Compliant

Allowable Variation Parameters:

  • Voltage - Forward (Vf) (Max) @ If: ±50 mV tolerance acceptable
  • Reverse Recovery Time (trr): Lower values acceptable (improved performance)
  • Current - Reverse Leakage @ Vr: Lower values acceptable (improved performance)
  • Operating Temperature - Junction: Extended ranges acceptable
  • Capacitance @ Vr, F: Variation acceptable where specified

Substitute parts are classified into two categories:

Parametric Equivalents: Parts meeting all mandatory matching parameters with identical or superior electrical characteristics.

Similar Parts: Parts meeting all mandatory matching parameters with minor variations in secondary electrical characteristics or enhanced specifications.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) Io Vf (Max) @ 2A trr (ns) Ir @ Vr Temp Range Product Status
ES2C M4G Taiwan Semiconductor Corporation 150 V 2 A 950 mV 35 10 µA @ 150 V -55°C ~ 150°C Discontinued at DiGi Electronics
ES2C Diotec Semiconductor 150 V 2 A 900 mV 20 5 µA @ 150 V -50°C ~ 150°C Active
ES2C R5G Taiwan Semiconductor Corporation 150 V 2 A 950 mV 35 10 µA @ 150 V -55°C ~ 150°C Discontinued at DiGi Electronics
ES2CH Taiwan Semiconductor Corporation 150 V 2 A 950 mV 35 10 µA @ 150 V -55°C ~ 150°C Active
ES2C-13-F Diodes Incorporated 150 V 2 A 920 mV 25 5 µA @ 150 V -55°C ~ 150°C Active
ES2CHE3_A/H Vishay General Semiconductor - Diodes Division 150 V 2 A 900 mV 20 10 µA @ 50 V -55°C ~ 150°C Active
ES2CHE3_A/I Vishay General Semiconductor - Diodes Division 150 V 2 A 900 mV 20 10 µA @ 50 V -55°C ~ 150°C Active
ESH2C-E3/52T Vishay General Semiconductor - Diodes Division 150 V 2 A 930 mV 35 2 µA @ 150 V -55°C ~ 175°C Active
ESH2C-E3/5BT Vishay General Semiconductor - Diodes Division 150 V 2 A 930 mV 35 2 µA @ 150 V -55°C ~ 175°C Active
ER2C_R1_00001 Panjit International Inc. 150 V 2 A 950 mV 35 1 µA @ 150 V -55°C ~ 150°C Active

Engineering Selection Recommendations

Primary Substitutes (Parametric Equivalents - Recommended for Direct Replacement):

  1. ES2CH (Taiwan Semiconductor Corporation) - Active product status. Identical electrical specifications to ES2C M4G. Automotive-grade with AEC-Q101 qualification. Recommended for applications requiring automotive compliance or enhanced reliability.

  2. ER2C_R1_00001 (Panjit International Inc.) - Active product status. Identical voltage and current ratings. Superior reverse leakage performance (1 µA vs. 10 µA). Suitable for low-leakage applications.

  3. ES2C (Diotec Semiconductor) - Active product status. Meets all mandatory parameters. Improved forward voltage (900 mV vs. 950 mV) and faster recovery time (20 ns vs. 35 ns). Suitable for efficiency-critical applications.

Secondary Substitutes (Similar Parts - Acceptable with Design Verification):

  1. ES2C-13-F (Diodes Incorporated) - Active product status. Meets all mandatory parameters. Improved forward voltage (920 mV) and recovery time (25 ns). Tape & Reel packaging available.

  2. ES2CHE3_A/H and ES2CHE3_A/I (Vishay General Semiconductor - Diodes Division) - Active product status. Automotive-grade with AEC-Q101 qualification. Improved recovery time (20 ns). Lower capacitance (18 pF vs. 25 pF).

  3. ESH2C-E3/52T and ESH2C-E3/5BT (Vishay General Semiconductor - Diodes Division) - Active product status. Extended operating temperature range (-55°C ~ 175°C). Superior reverse leakage (2 µA). Suitable for high-temperature applications.

Discontinued Parts (Not Recommended for New Designs):

  • ES2C R5G (Taiwan Semiconductor Corporation) - Discontinued at DiGi Electronics. Identical specifications to ES2C M4G but lacks active product status.

Frequently Asked Questions (FAQ)

Q: Can ES2C M4G be directly replaced with ES2CH?

A: Yes. ES2CH meets all mandatory electrical and mechanical parameters. Both are 150 V, 2 A, DO-214AA surface mount diodes with identical forward voltage and recovery characteristics. ES2CH is active and automotive-qualified.

Q: What is the difference between parametric equivalents and similar parts?

A: Parametric equivalents (ES2C, ES2C R5G, ES2CH, ER2C_R1_00001) match all mandatory specifications with identical or superior performance. Similar parts (ES2C-13-F, ES2CHE3_A/H, ES2CHE3_A/I, ESH2C-E3/52T, ESH2C-E3/5BT) meet mandatory parameters but may have variations in secondary characteristics such as recovery time, leakage current, or temperature range.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are ROHS3 compliant, matching the compliance status of ES2C M4G.

Q: Can I use ESH2C-E3/52T in place of ES2C M4G?

A: Yes. ESH2C-E3/52T meets all mandatory parameters (150 V, 2 A, DO-214AA, surface mount). It offers superior reverse leakage (2 µA vs. 10 µA) and extended temperature range (-55°C ~ 175°C vs. -55°C ~ 150°C). Design verification is recommended for temperature-dependent applications.

Q: What packaging options are available for substitutes?

A: Most substitutes are available in standard surface mount DO-214AA (SMB) package. Specific packaging variants include Cut Tape (CT) for ES2C R5G and Tape & Reel (TR) for ES2C-13-F, ES2CHE3_A/H, ES2CHE3_A/I, ESH2C-E3/52T, ESH2C-E3/5BT, and ER2C_R1_00001.

Q: Which substitute offers the best forward voltage performance?

A: ES2C (Diotec Semiconductor) and ES2CHE3_A/H and ES2CHE3_A/I (Vishay) offer the lowest forward voltage at 900 mV @ 2 A, compared to 950 mV for ES2C M4G. This results in lower power dissipation in high-current applications.

Q: Are automotive-qualified alternatives available?

A: Yes. ES2CH, ES2CHE3_A/H, and ES2CHE3_A/I are automotive-grade with AEC-Q101 qualification, suitable for automotive and industrial applications requiring enhanced reliability standards.

Q: What is the reverse recovery time significance?

A: Reverse recovery time (trr) affects switching speed and efficiency. Faster recovery (20 ns in ES2C and ES2CHE3 variants vs. 35 ns in ES2C M4G) reduces switching losses and improves efficiency in high-frequency applications.

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