ES2B M4G Equivalent & Substitute Parts

Part Overview

The ES2B M4G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 2 A average rectified current in a DO-214AA (SMB) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing production and repair applications. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives with minor parameter variations within acceptable operating ranges.

Substiute Parts

ES2B M4G
Taiwan Semiconductor CorporationIn Stock: 1165ES2B M4G Datasheet
ES2B M4G
Current Part
ES2B
YAGEOIn Stock: 55500ES2B Datasheet
ES2B
Parametric Equivalent
ES2B R5G
Taiwan Semiconductor CorporationIn Stock: 1266ES2B R5G Datasheet
ES2B R5G
Parametric Equivalent
ES2BH
Taiwan Semiconductor CorporationIn Stock: 856ES2BH Datasheet
ES2BH
Parametric Equivalent
CGRB202-G
Comchip TechnologyIn Stock: 16130CGRB202-G Datasheet
CGRB202-G
Similar
CSFB202-G
Comchip TechnologyIn Stock: 1198CSFB202-G Datasheet
CSFB202-G
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ER1B-LTP
Micro Commercial CoIn Stock: 3224ER1B-LTP Datasheet
ER1B-LTP
Similar
ES2B-13-F
Diodes IncorporatedIn Stock: 2202ES2B-13-F Datasheet
ES2B-13-F
Similar
ES2BA-13-F
Diodes IncorporatedIn Stock: 34683ES2BA-13-F Datasheet
ES2BA-13-F
Similar
ES2BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 3370ES2BHE3_A/H Datasheet
ES2BHE3_A/H
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ES2BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 7575ES2BHE3_A/I Datasheet
ES2BHE3_A/I
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ESH2B-E3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10269ESH2B-E3/52T Datasheet
ESH2B-E3/52T
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ESH2B-E3/5BT
Vishay General Semiconductor - Diodes DivisionIn Stock: 10407ESH2B-E3/5BT Datasheet
ESH2B-E3/5BT
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ESH2B-M3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 780ESH2B-M3/52T Datasheet
ESH2B-M3/52T
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ESH2B-M3/5BT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1124ESH2B-M3/5BT Datasheet
ESH2B-M3/5BT
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ESH2BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 782ESH2BHE3_A/H Datasheet
ESH2BHE3_A/H
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ESH2BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 921ESH2BHE3_A/I Datasheet
ESH2BHE3_A/I
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RS2B-13-F
Diodes IncorporatedIn Stock: 1537RS2B-13-F Datasheet
RS2B-13-F
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RS2BA-13-F
Diodes IncorporatedIn Stock: 5243RS2BA-13-F Datasheet
RS2BA-13-F
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RS2BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1080RS2BHE3_A/H Datasheet
RS2BHE3_A/H
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RS2BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1158RS2BHE3_A/I Datasheet
RS2BHE3_A/I
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S2B-13-F
Diodes IncorporatedIn Stock: 45190S2B-13-F Datasheet
S2B-13-F
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S2BA-13-F
Diodes IncorporatedIn Stock: 30244S2BA-13-F Datasheet
S2BA-13-F
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S2BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 970S2BHE3_A/H Datasheet
S2BHE3_A/H
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S2BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 7442S2BHE3_A/I Datasheet
S2BHE3_A/I
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S3BB
Diodes IncorporatedIn Stock: 1045S3BB Datasheet
S3BB
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S3BB-TP
Micro Commercial CoIn Stock: 3138S3BB-TP Datasheet
S3BB-TP
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ER2B_R1_00001
Panjit International Inc.In Stock: 2274ER2B_R1_00001 Datasheet
ER2B_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 2 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 2 A
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 100 V
Capacitance @ Vr, F 25 pF @ 4 V, 1 MHz
Package / Case DO-214AA, SMB
Mounting Type Surface Mount
Operating Temperature - Junction -55°C ~ 150°C
Technology Standard
Speed Fast Recovery ≤ 500 ns, > 200 mA (Io)
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the ES2B M4G is determined by the following critical parameters:

Electrical Specifications:

  • Voltage - DC Reverse (Vr) (Max): 100 V minimum
  • Current - Average Rectified (Io): 2 A minimum
  • Package / Case: DO-214AA (SMB) or compatible surface mount package
  • Operating Temperature - Junction: -55°C to 150°C minimum range

Compliance Requirements:

  • RoHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitute parts are grouped into two categories:

Parametric Equivalents: Parts with identical electrical ratings (100 V, 2 A) and the same DO-214AA package, differing only in manufacturer or packaging format (Tape & Reel vs. Cut Tape).

Similar Parts: Components with the same voltage and current ratings but minor variations in forward voltage, reverse recovery time, or reverse leakage current. These parts function within the same application envelope but may exhibit different thermal or switching characteristics.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) Io Vf (Max) @ If trr (ns) Ir @ Vr Package Product Status
ES2B M4G Taiwan Semiconductor Corporation 100 V 2 A 950 mV @ 2 A 35 10 µA @ 100 V DO-214AA (SMB) Discontinued at DiGi Electronics
ES2B YAGEO 100 V 2 A 950 mV @ 2 A DO-214AA (SMB) Active
ES2B R5G Taiwan Semiconductor Corporation 100 V 2 A 950 mV @ 2 A 35 10 µA @ 100 V DO-214AA (SMB) Discontinued at DiGi Electronics
ES2BH Taiwan Semiconductor Corporation 100 V 2 A 950 mV @ 2 A 35 10 µA @ 100 V DO-214AA (SMB) Active
CGRB202-G Comchip Technology 100 V 2 A 1.1 V @ 2 A 5 µA @ 100 V DO-214AA (SMB) Active
CSFB202-G Comchip Technology 100 V 2 A 920 mV @ 2 A 35 5 µA @ 100 V DO-214AA (SMB) Active
ER1B-LTP Micro Commercial Co 100 V 1 A 950 mV @ 1 A 35 5 µA @ 100 V DO-214AA (SMB) Not For New Designs
ES2B-13-F Diodes Incorporated 100 V 2 A 920 mV @ 2 A 25 5 µA @ 100 V DO-214AA (SMB) Active
ES2BA-13-F Diodes Incorporated 100 V 2 A 920 mV @ 2 A 25 5 µA @ 100 V DO-214AC (SMA) Active
ES2BHE3_A/H Vishay General Semiconductor - Diodes Division 100 V 2 A 900 mV @ 2 A 20 10 µA @ 50 V DO-214AA (SMB) Active
ES2BHE3_A/I Vishay General Semiconductor - Diodes Division 100 V 2 A 900 mV @ 2 A 20 10 µA @ 50 V DO-214AA (SMB) Active

Engineering Selection Recommendations

Parametric Equivalents (Direct Replacement):

The ES2B from YAGEO and ES2B R5G from Taiwan Semiconductor Corporation are parametric equivalents to the ES2B M4G. Both maintain 100 V reverse voltage, 2 A rectified current, and DO-214AA package specifications. The ES2B R5G is a variant of the original manufacturer with identical electrical characteristics. The YAGEO ES2B is currently active with substantial inventory availability (55,400 pcs), making it the primary direct replacement option.

Automotive-Grade Alternatives:

The ES2BH from Taiwan Semiconductor Corporation and ES2BHE3_A/H and ES2BHE3_A/I from Vishay are automotive-qualified variants (AEC-Q101) with identical voltage and current ratings. These parts are suitable for applications requiring automotive-grade reliability and are currently in active production status. The Vishay variants feature improved reverse recovery time (20 ns vs. 35 ns) and lower forward voltage (900 mV vs. 950 mV), resulting in reduced power dissipation.

Alternative Manufacturers:

CSFB202-G from Comchip Technology provides a functionally equivalent 100 V, 2 A rectifier in DO-214AA package with 920 mV forward voltage and 35 ns reverse recovery time. This part is active and available with 1,168 pcs in inventory.

ES2B-13-F from Diodes Incorporated is a 100 V, 2 A rectifier in DO-214AA (SMB) package with 920 mV forward voltage and 25 ns reverse recovery time, currently active with 2,163 pcs available.

Package Variant:

ES2BA-13-F from Diodes Incorporated is electrically equivalent to ES2B-13-F but uses a DO-214AC (SMA) package instead of DO-214AA (SMB). This part is suitable only if the circuit board layout accommodates the SMA footprint. It is currently active with 34,605 pcs in inventory.

Not Recommended:

ER1B-LTP from Micro Commercial Co is rated for 1 A average rectified current, which is insufficient for 2 A applications. This part is marked "Not For New Designs" and should not be selected for new applications.

CGRB202-G from Comchip Technology exhibits higher forward voltage (1.1 V @ 2 A) compared to the ES2B M4G (950 mV @ 2 A), resulting in increased power dissipation and thermal stress. This part is suitable only for applications with relaxed thermal constraints.

Frequently Asked Questions (FAQ)

Q: Can ES2B from YAGEO be used as a direct replacement for ES2B M4G?

A: Yes. The YAGEO ES2B maintains identical electrical specifications (100 V, 2 A, 950 mV forward voltage) and the same DO-214AA package. The primary difference is packaging format (Tape & Reel vs. standard packaging). Electrical performance is equivalent.

Q: What is the difference between ES2BH and ES2B M4G?

A: ES2BH is an automotive-qualified variant (AEC-Q101) of the ES2B series with identical electrical ratings. Both are rated for 100 V, 2 A, and feature 35 ns reverse recovery time. ES2BH is currently in active production, whereas ES2B M4G is discontinued.

Q: Can ES2BA-13-F replace ES2B M4G in existing designs?

A: ES2BA-13-F is electrically equivalent but uses a different package (DO-214AC SMA vs. DO-214AA SMB). Direct substitution requires circuit board redesign to accommodate the SMA footprint. The part is not a drop-in replacement.

Q: Why do some substitute parts have lower forward voltage?

A: Forward voltage variation (900 mV to 950 mV @ 2 A) is within normal manufacturing tolerance for rectifier diodes. Lower forward voltage results in reduced power dissipation and improved efficiency. Parts with lower forward voltage are generally preferred in power-sensitive applications.

Q: Is CGRB202-G suitable for high-current applications?

A: CGRB202-G is rated for 2 A average rectified current, matching the ES2B M4G specification. However, its higher forward voltage (1.1 V vs. 950 mV) generates approximately 15% more heat at rated current. Selection depends on thermal design margins in the application.

Q: What does AEC-Q101 qualification mean?

A: AEC-Q101 is an automotive industry standard qualification for discrete semiconductors. Parts bearing this qualification (ES2BH, ES2BHE3_A/H, ES2BHE3_A/I) have undergone rigorous reliability testing and are suitable for automotive and high-reliability applications.

Q: Can ER1B-LTP be used if the application only requires 1 A?

A: ER1B-LTP is rated for 1 A average rectified current and is marked "Not For New Designs." Although it meets the 1 A requirement, its discontinued status and design restriction make it unsuitable for new applications. ES2B-series parts rated for 2 A provide better design margin and are actively produced.

Q: What is the significance of reverse recovery time (trr)?

A: Reverse recovery time affects switching speed and efficiency in high-frequency applications. The ES2B M4G has 35 ns trr. Vishay ES2BHE3 variants feature 20 ns trr, enabling faster switching with reduced switching losses. For low-frequency rectification, trr differences are negligible.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts maintain RoHS3 compliance and Moisture Sensitivity Level 1 (Unlimited), matching the ES2B M4G environmental specifications.

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