ES2BA M2G Equivalent & Substitute Parts

Part Overview

The ES2BA M2G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 2 A average rectified current in a surface mount DO-214AC (SMA) package. This component is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute parts for ongoing design requirements and production needs. The part operates across a junction temperature range of -55°C to 150°C and complies with RoHS3 and REACH standards.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	2	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 2 A	mV
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	10	µA @ 100 V
Capacitance @ Vr, F	25	pF @ 4V, 1MHz
Package / Case	DO-214AC, SMA	-
Operating Temperature - Junction	-55 to 150	°C
Technology	Standard	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the ES2BA M2G are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalents maintain identical or functionally equivalent electrical specifications across all critical parameters: 100 V reverse voltage rating, 2 A average rectified current, fast recovery technology with 35 ns reverse recovery time, DO-214AC (SMA) package, and standard diode technology. These parts satisfy direct replacement requirements without circuit redesign.

Similar Parts share the same 100 V reverse voltage rating and DO-214AC (SMA) package but differ in one or more critical parameters, primarily current rating (1 A instead of 2 A) or diode technology (Schottky instead of standard). These parts require circuit evaluation to confirm suitability for the application.

The key parameters determining substitution eligibility are:

Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2 A (for parametric equivalents)
Package / Case: DO-214AC, SMA
Technology: Standard (for parametric equivalents)
Reverse Recovery Time (trr): 35 ns
Operating Temperature Range: -55°C minimum, 150°C maximum (for parametric equivalents)

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [mV]	trr [ns]	Ir @ Vr [µA]	Package	Temp Range [°C]	Technology	Product Status
ES2BA M2G	Taiwan Semiconductor Corporation	100	2	950 @ 2A	35	10 @ 100V	DO-214AC (SMA)	-55 to 150	Standard	Discontinued
ES2BA	Good-Ark Semiconductor	100	2	920 @ 2A	35	5 @ 100V	DO-214AC (SMA)	-55 to 125	Standard	Active
ES2BA R3G	Taiwan Semiconductor Corporation	100	2	950 @ 2A	35	10 @ 100V	DO-214AC (SMA)	-55 to 150	Standard	Discontinued
ES2BAH	Taiwan Semiconductor Corporation	100	2	950 @ 2A	35	10 @ 100V	DO-214AC (SMA)	-55 to 150	Standard	Active
B1100-13-F	Diodes Incorporated	100	1	790 @ 1A	35	500 @ 100V	DO-214AC (SMA)	-65 to 150	Schottky	Active
B1100B-13-F	Diodes Incorporated	100	1	790 @ 1A	35	500 @ 100V	DO-214AA (SMB)	-65 to 150	Schottky	Active
B1100LB-13-F	Diodes Incorporated	100	1	750 @ 1A	35	500 @ 100V	DO-214AA (SMB)	-65 to 175	Schottky	Active
B1100Q-13-F	Diodes Incorporated	100	1	790 @ 1A	35	-	DO-214AC (SMA)	-65 to 155	Schottky	Active
B2100A-13-F	Diodes Incorporated	100	2	790 @ 2A	35	10 @ 100V	DO-214AC (SMA)	-65 to 125	Schottky	Active
B2100AF-13	Diodes Incorporated	100	2	790 @ 2A	35	10 @ 100V	DO-221AC (SMAF)	-55 to 150	Schottky	Active
CDBA1100-HF	Comchip Technology	100	1	810 @ 1A	35	500 @ 100V	DO-214AC (SMA)	-50 to 150	Schottky	Active

Engineering Selection Recommendations

Parametric Equivalent Selection:

The ES2BAH manufactured by Taiwan Semiconductor Corporation is the primary parametric equivalent. This part maintains identical electrical specifications to the ES2BA M2G across all critical parameters: 100 V reverse voltage, 2 A average rectified current, 950 mV forward voltage at 2 A, 35 ns reverse recovery time, and -55°C to 150°C operating temperature range. The ES2BAH carries AEC-Q101 automotive qualification and is currently in active production status, ensuring long-term availability. RoHS3 and REACH compliance are maintained.

The ES2BA manufactured by Good-Ark Semiconductor provides an alternative parametric equivalent with marginally improved reverse leakage characteristics (5 µA versus 10 µA at 100 V) and slightly lower forward voltage (920 mV versus 950 mV at 2 A). However, the operating temperature range is limited to -55°C to 125°C, which may restrict use in applications requiring the full 150°C upper limit. This part is in active production status.

The ES2BA R3G manufactured by Taiwan Semiconductor Corporation is electrically identical to the ES2BA M2G but is supplied in Cut Tape packaging rather than the original format. This part is discontinued at DiGi Electronics.

Similar Part Selection:

The B2100A-13-F manufactured by Diodes Incorporated matches the 100 V reverse voltage and 2 A current rating in the DO-214AC (SMA) package but employs Schottky diode technology instead of standard rectifier technology. The forward voltage is reduced to 790 mV at 2 A, resulting in lower power dissipation. The operating temperature range is -65°C to 125°C. This part is in active production status and suitable for applications where Schottky characteristics are acceptable.

The B2100AF-13 manufactured by Diodes Incorporated provides identical electrical specifications to the B2100A-13-F but uses a different package format (DO-221AC, SMAF) with flat leads instead of the standard SMA package. The operating temperature range extends to 150°C. This part is in active production status.

Parts with 1 A current ratings (B1100-13-F, B1100B-13-F, B1100LB-13-F, B1100Q-13-F, CDBA1100-HF) are suitable only for applications where the circuit current requirement does not exceed 1 A. These parts employ Schottky technology and are not direct substitutes for 2 A applications.

Frequently Asked Questions (FAQ)

Q: Can the ES2BA from Good-Ark Semiconductor be used as a direct replacement for the ES2BA M2G?

A: The ES2BA from Good-Ark Semiconductor is electrically compatible for most applications. Both parts share identical 100 V reverse voltage, 2 A current rating, 35 ns reverse recovery time, and DO-214AC (SMA) package. The primary difference is the operating temperature range: the Good-Ark part is rated to 125°C maximum versus 150°C for the original. If the application operates within -55°C to 125°C, this part is suitable. The Good-Ark part also exhibits lower reverse leakage (5 µA versus 10 µA) and slightly lower forward voltage (920 mV versus 950 mV), both favorable characteristics.

Q: What is the difference between the ES2BAH and the ES2BA M2G?

A: The ES2BAH is electrically identical to the ES2BA M2G in all critical parameters: 100 V reverse voltage, 2 A current, 950 mV forward voltage at 2 A, 35 ns reverse recovery time, and -55°C to 150°C operating range. The ES2BAH carries AEC-Q101 automotive qualification, indicating it meets automotive reliability standards. The ES2BAH is currently in active production, whereas the ES2BA M2G is discontinued. For new designs and ongoing production, the ES2BAH is the recommended equivalent.

Q: Can Schottky diodes like the B2100A-13-F replace the ES2BA M2G?

A: The B2100A-13-F shares the same 100 V reverse voltage, 2 A current rating, and DO-214AC (SMA) package as the ES2BA M2G. However, Schottky diodes exhibit fundamentally different electrical characteristics: lower forward voltage (790 mV versus 950 mV at 2 A), higher reverse leakage current (10 µA at 100 V is typical for Schottky versus 10 µA for the standard rectifier), and different temperature coefficients. Schottky diodes are suitable for applications where lower forward voltage drop and reduced power dissipation are beneficial. Circuit evaluation is required to confirm compatibility, particularly regarding reverse leakage and switching behavior.

Q: Why are the 1 A rated parts (B1100 series) listed as similar parts rather than substitutes?

A: The B1100 series parts are rated for 1 A average rectified current, whereas the ES2BA M2G is rated for 2 A. Using a 1 A rated part in a 2 A application would exceed the component's current rating, resulting in excessive junction temperature rise and potential device failure. These parts are listed as similar because they share the same 100 V reverse voltage rating and fast recovery characteristics, but they are not suitable for direct replacement in 2 A applications.

Q: What packaging options are available for 100 V, 2 A rectifier diodes?

A: The primary packaging options for 100 V, 2 A rectifier diodes are DO-214AC (SMA) and DO-221AC (SMAF). The ES2BA M2G uses DO-214AC (SMA), which is the standard surface mount package for this current and voltage class. The B2100AF-13 uses DO-221AC (SMAF), which features flat leads instead of the standard SMA leads. Both packages are surface mount compatible and suitable for automated assembly. Package selection depends on PCB layout requirements and assembly equipment capabilities.

Q: Are all listed parts RoHS3 and REACH compliant?

A: All parts listed in this reference are RoHS3 compliant and REACH unaffected, matching the compliance status of the ES2BA M2G. This ensures compatibility with environmental and regulatory requirements across all listed alternatives.

Q: What is the significance of the 35 ns reverse recovery time specification?

A: The 35 ns reverse recovery time indicates the speed at which the diode transitions from forward conduction to reverse blocking when the applied voltage reverses. This specification is critical for switching applications and determines the diode's suitability for high-frequency rectification. All listed parts maintain the same 35 ns reverse recovery time, ensuring equivalent switching performance. This specification is classified as fast recovery for diodes rated above 200 mA.

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