ES2BAHR3G Equivalent & Substitute Parts

Part Overview

The ES2BAHR3G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 2 A average rectified current in a surface mount DO-214AC (SMA) package. This component is classified as a fast recovery diode with a reverse recovery time of 35 nanoseconds and is qualified to AEC-Q101 automotive standards. The part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design requirements and procurement needs.

Substiute Parts

ES2BAHR3G
Taiwan Semiconductor CorporationIn Stock: 793ES2BAHR3G Datasheet
ES2BAHR3G
Current Part
ES2BA
Good-Ark SemiconductorIn Stock: 10290ES2BA Datasheet
ES2BA
Parametric Equivalent
ES2BA R3G
Taiwan Semiconductor CorporationIn Stock: 1207ES2BA R3G Datasheet
ES2BA R3G
Parametric Equivalent
ES2BAH
Taiwan Semiconductor CorporationIn Stock: 1135ES2BAH Datasheet
ES2BAH
Parametric Equivalent
B1100-13-F
Diodes IncorporatedIn Stock: 120356B1100-13-F Datasheet
B1100-13-F
Similar
B1100B-13-F
Diodes IncorporatedIn Stock: 28195B1100B-13-F Datasheet
B1100B-13-F
Similar
B1100LB-13-F
Diodes IncorporatedIn Stock: 17475B1100LB-13-F Datasheet
B1100LB-13-F
Similar
B1100Q-13-F
Diodes IncorporatedIn Stock: 15118B1100Q-13-F Datasheet
B1100Q-13-F
Similar
B2100A-13-F
Diodes IncorporatedIn Stock: 1510B2100A-13-F Datasheet
B2100A-13-F
Similar
B2100AF-13
Diodes IncorporatedIn Stock: 30344B2100AF-13 Datasheet
B2100AF-13
Similar
CDBA1100-HF
Comchip TechnologyIn Stock: 6405CDBA1100-HF Datasheet
CDBA1100-HF
Similar
CDBA2100-HF
Comchip TechnologyIn Stock: 21748CDBA2100-HF Datasheet
CDBA2100-HF
Similar
CDBA3100-HF
Comchip TechnologyIn Stock: 95488CDBA3100-HF Datasheet
CDBA3100-HF
Similar
CDBA5100-HF
Comchip TechnologyIn Stock: 63841CDBA5100-HF Datasheet
CDBA5100-HF
Similar
CFRA102-G
Comchip TechnologyIn Stock: 850CFRA102-G Datasheet
CFRA102-G
Similar
CGRA4002-G
Comchip TechnologyIn Stock: 967CGRA4002-G Datasheet
CGRA4002-G
Similar
CMR1U-01M BK PBFREE
Central Semiconductor CorpIn Stock: 752CMR1U-01M BK PBFREE Datasheet
CMR1U-01M BK PBFREE
Similar
CMR1U-01M TR13 PBFREE
Central Semiconductor CorpIn Stock: 25248CMR1U-01M TR13 PBFREE Datasheet
CMR1U-01M TR13 PBFREE
Similar
CSFA102-G
Comchip TechnologyIn Stock: 801CSFA102-G Datasheet
CSFA102-G
Similar
ES1B-13-F
Diodes IncorporatedIn Stock: 35153ES1B-13-F Datasheet
ES1B-13-F
Similar
ES1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 27131ES1B-E3/5AT Datasheet
ES1B-E3/5AT
Similar
ES1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 70592ES1B-E3/61T Datasheet
ES1B-E3/61T
Similar
ES1B-LTP
Micro Commercial CoIn Stock: 17292ES1B-LTP Datasheet
ES1B-LTP
Similar
ES1B-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 917ES1B-M3/5AT Datasheet
ES1B-M3/5AT
Similar
ES1B-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 762ES1B-M3/61T Datasheet
ES1B-M3/61T
Similar
ES1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 7233ES1BHE3_A/H Datasheet
ES1BHE3_A/H
Similar
ES1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 8375ES1BHE3_A/I Datasheet
ES1BHE3_A/I
Similar
ES2B-LTP
Micro Commercial CoIn Stock: 9518ES2B-LTP Datasheet
ES2B-LTP
Similar
ESH1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 920ESH1B-E3/5AT Datasheet
ESH1B-E3/5AT
Similar
ESH1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10156ESH1B-E3/61T Datasheet
ESH1B-E3/61T
Similar
ESH1B-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 742ESH1B-M3/5AT Datasheet
ESH1B-M3/5AT
Similar
ESH1B-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 844ESH1B-M3/61T Datasheet
ESH1B-M3/61T
Similar
GS1B-LTP
Micro Commercial CoIn Stock: 21523GS1B-LTP Datasheet
GS1B-LTP
Similar
RS1B-13-F
Diodes IncorporatedIn Stock: 55344RS1B-13-F Datasheet
RS1B-13-F
Similar
RS1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 15322RS1B-E3/5AT Datasheet
RS1B-E3/5AT
Similar
RS1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 7879RS1B-E3/61T Datasheet
RS1B-E3/61T
Similar
RS1B-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 835RS1B-M3/5AT Datasheet
RS1B-M3/5AT
Similar
RS1BB-13-F
Diodes IncorporatedIn Stock: 3243RS1BB-13-F Datasheet
RS1BB-13-F
Similar
RS1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1121RS1BHE3_A/H Datasheet
RS1BHE3_A/H
Similar
RS1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 795RS1BHE3_A/I Datasheet
RS1BHE3_A/I
Similar
S1B-13-F
Diodes IncorporatedIn Stock: 15133S1B-13-F Datasheet
S1B-13-F
Similar
S1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 56951S1B-E3/5AT Datasheet
S1B-E3/5AT
Similar
S1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 30862S1B-E3/61T Datasheet
S1B-E3/61T
Similar
S1BB-13-F
Diodes IncorporatedIn Stock: 26267S1BB-13-F Datasheet
S1BB-13-F
Similar
S1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 21489S1BHE3_A/H Datasheet
S1BHE3_A/H
Similar
S1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 748S1BHE3_A/I Datasheet
S1BHE3_A/I
Similar
SK310A-LTP
Micro Commercial CoIn Stock: 116076SK310A-LTP Datasheet
SK310A-LTP
Similar
SK510A-LTP
Micro Commercial CoIn Stock: 151089SK510A-LTP Datasheet
SK510A-LTP
Similar
SL310A-TP
Micro Commercial CoIn Stock: 67799SL310A-TP Datasheet
SL310A-TP
Similar
SS110-LTP
Micro Commercial CoIn Stock: 20364SS110-LTP Datasheet
SS110-LTP
Similar
SS110-TP
Micro Commercial CoIn Stock: 1377SS110-TP Datasheet
SS110-TP
Similar
SS210-LTP
Micro Commercial CoIn Stock: 2320SS210-LTP Datasheet
SS210-LTP
Similar
STPS1H100A
STMicroelectronicsIn Stock: 149206STPS1H100A Datasheet
STPS1H100A
Similar
STPS1H100AY
STMicroelectronicsIn Stock: 90165STPS1H100AY Datasheet
STPS1H100AY
Similar
STPS2H100A
STMicroelectronicsIn Stock: 45489STPS2H100A Datasheet
STPS2H100A
Similar
STPS2H100AY
STMicroelectronicsIn Stock: 3102STPS2H100AY Datasheet
STPS2H100AY
Similar
U1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 773U1B-E3/5AT Datasheet
U1B-E3/5AT
Similar
U1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 12144U1B-E3/61T Datasheet
U1B-E3/61T
Similar
UFS110JE3/TR13
Microchip TechnologyIn Stock: 683UFS110JE3/TR13 Datasheet
UFS110JE3/TR13
Similar
UH1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1111UH1BHE3_A/H Datasheet
UH1BHE3_A/H
Similar
UH1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 732UH1BHE3_A/I Datasheet
UH1BHE3_A/I
Similar
US1B-13-F
Diodes IncorporatedIn Stock: 142770US1B-13-F Datasheet
US1B-13-F
Similar
US1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 6838US1B-E3/5AT Datasheet
US1B-E3/5AT
Similar
US1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 62485US1B-E3/61T Datasheet
US1B-E3/61T
Similar
US1B-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1024US1B-M3/5AT Datasheet
US1B-M3/5AT
Similar
US1B-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 13902US1B-M3/61T Datasheet
US1B-M3/61T
Similar
US1B-TP
Micro Commercial CoIn Stock: 56481US1B-TP Datasheet
US1B-TP
Similar
US1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1160US1BHE3_A/H Datasheet
US1BHE3_A/H
Similar
US1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 904US1BHE3_A/I Datasheet
US1BHE3_A/I
Similar
VS-1EMH01-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 25289VS-1EMH01-M3/5AT Datasheet
VS-1EMH01-M3/5AT
Similar
VS-2EMH01-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 23285VS-2EMH01-M3/5AT Datasheet
VS-2EMH01-M3/5AT
Similar
VSSA210-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 5057VSSA210-E3/5AT Datasheet
VSSA210-E3/5AT
Similar
VSSA210-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1579VSSA210-E3/61T Datasheet
VSSA210-E3/61T
Similar
VSSA210-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 16148VSSA210-M3/5AT Datasheet
VSSA210-M3/5AT
Similar
VSSA210-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 25098VSSA210-M3/61T Datasheet
VSSA210-M3/61T
Similar
AES2BF-HF
Comchip TechnologyIn Stock: 781AES2BF-HF Datasheet
AES2BF-HF
Parametric Equivalent
ES2B_R1_00001
Panjit International Inc.In Stock: 2726ES2B_R1_00001 Datasheet
ES2B_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 2 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 2 A mV
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 100 V
Capacitance @ Vr, F 25 pF @ 4V, 1MHz
Package / Case DO-214AC, SMA
Operating Temperature - Junction -55 to 150 °C
Technology Standard
Grade Automotive
Qualification AEC-Q101
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the ES2BAHR3G are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalents share identical or functionally equivalent electrical specifications and package form factors. These parts maintain the same voltage rating (100 V), current rating (2 A), package type (DO-214AC SMA), and fast recovery characteristics (≤500 ns). Parametric equivalents include ES2BA (Good-Ark Semiconductor), ES2BA R3G (Taiwan Semiconductor Corporation), and ES2BAH (Taiwan Semiconductor Corporation). These components are direct functional replacements with no circuit redesign required.

Similar Parts meet the voltage and package requirements but differ in current rating, diode technology, or other secondary parameters. These parts are suitable for applications where the 2 A current rating is not fully utilized or where Schottky technology characteristics are acceptable. Similar parts include the B1100 series (Diodes Incorporated) at 1 A rating and B2100 series (Diodes Incorporated) at 2 A rating with Schottky technology, as well as CDBA1100-HF (Comchip Technology) at 1 A rating.

Substitution logic is based on the following key parameters:

  • Voltage - DC Reverse (Vr) (Max): 100 V minimum
  • Current - Average Rectified (Io): 2 A for parametric equivalents; 1 A or 2 A for similar parts
  • Package / Case: DO-214AC (SMA) for parametric equivalents; DO-214AC (SMA), DO-214AA (SMB), or DO-221AC (SMAF) for similar parts
  • Technology: Standard (fast recovery) for parametric equivalents; Schottky for similar parts
  • Operating Temperature - Junction: -55°C to 150°C minimum for parametric equivalents

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [mV] trr [ns] Ir @ Vr [µA] Package Technology Temp Range [°C] Status
ES2BAHR3G Taiwan Semiconductor 100 2 950 @ 2A 35 10 @ 100V DO-214AC (SMA) Standard -55 to 150 Discontinued
ES2BA Good-Ark Semiconductor 100 2 920 @ 2A 35 5 @ 100V DO-214AC (SMA) Standard -55 to 125 Active
ES2BA R3G Taiwan Semiconductor 100 2 950 @ 2A 35 10 @ 100V DO-214AC (SMA) Standard -55 to 150 Discontinued
ES2BAH Taiwan Semiconductor 100 2 950 @ 2A 35 10 @ 100V DO-214AC (SMA) Standard -55 to 150 Active
B1100-13-F Diodes Incorporated 100 1 790 @ 1A ≤500 500 @ 100V DO-214AC (SMA) Schottky -65 to 150 Active
B1100B-13-F Diodes Incorporated 100 1 790 @ 1A ≤500 500 @ 100V DO-214AA (SMB) Schottky -65 to 150 Active
B1100LB-13-F Diodes Incorporated 100 1 750 @ 1A ≤500 500 @ 100V DO-214AA (SMB) Schottky -65 to 175 Active
B1100Q-13-F Diodes Incorporated 100 1 790 @ 1A ≤500 DO-214AC (SMA) Schottky -65 to 155 Active
B2100A-13-F Diodes Incorporated 100 2 790 @ 2A ≤500 10 @ 100V DO-214AC (SMA) Schottky -65 to 125 Active
B2100AF-13 Diodes Incorporated 100 2 790 @ 2A ≤500 10 @ 100V DO-221AC (SMAF) Schottky -55 to 150 Active
CDBA1100-HF Comchip Technology 100 1 810 @ 1A ≤500 500 @ 100V DO-214AC (SMA) Schottky -50 to 150 Active

Engineering Selection Recommendations

For Direct Replacement (Parametric Equivalents):

ES2BAH (Taiwan Semiconductor Corporation) is the primary recommended substitute. This part is active in production, maintains identical electrical specifications to the ES2BAHR3G (100 V, 2 A, 950 mV forward voltage, 35 ns recovery time), operates across the same temperature range (-55°C to 150°C), carries AEC-Q101 automotive qualification, and is packaged in DO-214AC (SMA). The part is ROHS3 compliant and REACH unaffected, matching the compliance profile of the original component.

ES2BA (Good-Ark Semiconductor) is an alternative parametric equivalent with active production status. This part meets the 100 V and 2 A requirements with slightly improved forward voltage characteristics (920 mV versus 950 mV) and lower reverse leakage current (5 µA versus 10 µA). The operating temperature range is -55°C to 125°C, which is 25°C lower than the original part. This part is suitable for applications not requiring the full 150°C junction temperature capability.

ES2BA R3G (Taiwan Semiconductor Corporation) is electrically identical to the ES2BAHR3G but is also discontinued at DiGi Electronics, limiting its utility for ongoing procurement.

For Current-Limited Applications (Similar Parts with 1 A Rating):

B1100Q-13-F (Diodes Incorporated) is a Schottky diode rated for 100 V and 1 A in DO-214AC (SMA) package with AEC-Q101 automotive qualification. This part is suitable for applications where the circuit current does not exceed 1 A. The Schottky technology provides lower forward voltage (790 mV) compared to the standard fast recovery diode, reducing power dissipation. Operating temperature range is -65°C to 155°C.

CDBA1100-HF (Comchip Technology) is a Schottky diode rated for 100 V and 1 A in DO-214AC (SMA) package. This part offers forward voltage of 810 mV and operates from -50°C to 150°C.

For Full Current Capability with Schottky Technology (Similar Parts with 2 A Rating):

B2100A-13-F (Diodes Incorporated) is a Schottky diode rated for 100 V and 2 A in DO-214AC (SMA) package. This part maintains the same current rating as the original component with lower forward voltage (790 mV) and operates from -65°C to 125°C. The reduced operating temperature range to 125°C may be limiting for some automotive applications.

B2100AF-13 (Diodes Incorporated) is a Schottky diode rated for 100 V and 2 A in DO-221AC (SMAF) package with flat leads. This part operates from -55°C to 150°C, matching the original temperature range, and is suitable for applications where the SMAF package form factor is acceptable.

Frequently Asked Questions (FAQ)

Q: Can ES2BA be used as a direct replacement for ES2BAHR3G?

A: ES2BA is a parametric equivalent meeting the 100 V, 2 A, and DO-214AC (SMA) package requirements. The forward voltage is slightly lower (920 mV versus 950 mV), and reverse leakage is lower (5 µA versus 10 µA). The operating temperature range is -55°C to 125°C, which is 25°C lower than the original. ES2BA is suitable for replacement in applications not requiring operation above 125°C junction temperature.

Q: What is the difference between the ES2BAHR3G and ES2BAH?

A: ES2BAH is electrically and mechanically identical to ES2BAHR3G. Both are rated for 100 V, 2 A, with 950 mV forward voltage, 35 ns recovery time, and operate from -55°C to 150°C in DO-214AC (SMA) packages. The primary difference is product status: ES2BAHR3G is discontinued at DiGi Electronics, while ES2BAH is active in production. ES2BAH is the recommended substitute for ongoing procurement.

Q: Can Schottky diodes (B1100 or B2100 series) replace the ES2BAHR3G?

A: Schottky diodes differ in technology from the standard fast recovery diode. The B1100 series is rated for 1 A (half the current rating of the original), while the B2100 series is rated for 2 A. Schottky diodes exhibit lower forward voltage (790 mV for B2100A-13-F versus 950 mV for ES2BAHR3G) and higher reverse leakage current (10 µA for B2100A-13-F versus 10 µA for ES2BAHR3G). Schottky diodes are suitable for replacement only in applications where the circuit design accommodates the different forward voltage characteristics and where the current requirement does not exceed the Schottky part rating.

Q: What is the significance of the DO-214AC (SMA) package?

A: DO-214AC (SMA) is a surface mount package with specific mechanical and electrical footprint dimensions. All parametric equivalents (ES2BA, ES2BA R3G, ES2BAH) use this identical package, ensuring direct PCB compatibility without layout modifications. Similar parts using alternative packages (DO-214AA SMB, DO-221AC SMAF) require PCB redesign and are not pin-compatible.

Q: Why do some substitute parts have lower operating temperature ranges?

A: Operating temperature range is determined by the semiconductor material and device design. ES2BA operates to 125°C junction temperature, while ES2BAHR3G operates to 150°C. For applications requiring full 150°C capability, ES2BAH or B2100AF-13 are appropriate selections. For applications with lower temperature requirements, ES2BA provides an active production alternative.

Q: Is AEC-Q101 qualification important for substitution?

A: AEC-Q101 qualification indicates the component meets automotive reliability standards. ES2BAHR3G and ES2BAH both carry AEC-Q101 qualification. B1100Q-13-F also carries AEC-Q101 qualification. For automotive applications, selection of AEC-Q101 qualified parts is required. Non-qualified parts may not meet design specifications for automotive use.

Q: What is the difference between ES2BA R3G and ES2BAH?

A: Both parts are manufactured by Taiwan Semiconductor Corporation with identical electrical specifications (100 V, 2 A, 950 mV forward voltage, 35 ns recovery time, -55°C to 150°C). ES2BA R3G is discontinued at DiGi Electronics, while ES2BAH is active in production. For new designs and ongoing procurement, ES2BAH is the appropriate selection.

Q: Can B2100AF-13 replace ES2BAHR3G despite the different package?

A: B2100AF-13 uses DO-221AC (SMAF) package with flat leads, which differs mechanically from the DO-214AC (SMA) package of the original part. Direct PCB substitution is not possible without layout modification. However, B2100AF-13 meets the 100 V, 2 A electrical requirements and operates from -55°C to 150°C, matching the original temperature range. This part is suitable for replacement only when PCB redesign is feasible.

Request Quote (Ships tomorrow)