ES2BAHM2G Equivalent & Substitute Parts

Part Overview

The ES2BAHM2G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 2 A average rectified current in a DO-214AC (SMA) surface mount package. This component is classified as a fast recovery diode with a reverse recovery time of 35 nanoseconds and is qualified to AEC-Q101 automotive standards. The part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	2	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 2 A	mV
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	10	µA @ 100 V
Capacitance @ Vr, F	25	pF @ 4V, 1MHz
Operating Temperature - Junction	-55 to 150	°C
Package / Case	DO-214AC, SMA	—
Technology	Standard	—
Grade	Automotive	—
Qualification	AEC-Q101	—

Substitute Part Grouping Explanation

Substitute parts for the ES2BAHM2G are categorized into two groups based on electrical and mechanical compatibility:

Parametric Equivalents share identical or functionally equivalent electrical specifications and the same DO-214AC (SMA) package form factor. These parts maintain the 100 V reverse voltage rating, 2 A current rating, fast recovery characteristics (≤500 ns), and surface mount configuration. Parametric equivalents differ in forward voltage drop, reverse leakage current, and operating temperature range within acceptable tolerances for the application.

Similar Parts maintain the 100 V reverse voltage rating and fast recovery speed but differ in current rating (1 A instead of 2 A), technology type (Schottky instead of standard rectifier), or package variant (SMB, SMAF). These parts are suitable only when circuit requirements permit reduced current capacity or alternative package configurations.

Substitution eligibility is determined by:

Voltage - DC Reverse (Vr) (Max): 100 V minimum
Current - Average Rectified (Io): 2 A for parametric equivalents; 1 A or 2 A for similar parts
Speed: Fast Recovery ≤500 ns
Package / Case: DO-214AC (SMA) for parametric equivalents; alternative packages for similar parts
Mounting Type: Surface Mount
Technology: Standard for parametric equivalents; Schottky for similar parts

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [mV]	trr [ns]	Ir @ Vr [µA]	Package	Technology	Temp Range [°C]	Product Status
ES2BAHM2G	Taiwan Semiconductor Corporation	100	2	950 @ 2 A	35	10 @ 100 V	DO-214AC (SMA)	Standard	-55 to 150	Discontinued
ES2BA	Good-Ark Semiconductor	100	2	920 @ 2 A	35	5 @ 100 V	DO-214AC (SMA)	Standard	-55 to 125	Active
ES2BA R3G	Taiwan Semiconductor Corporation	100	2	950 @ 2 A	35	10 @ 100 V	DO-214AC (SMA)	Standard	-55 to 150	Discontinued
ES2BAH	Taiwan Semiconductor Corporation	100	2	950 @ 2 A	35	10 @ 100 V	DO-214AC (SMA)	Standard	-55 to 150	Active
B1100-13-F	Diodes Incorporated	100	1	790 @ 1 A	≤500	500 @ 100 V	DO-214AC (SMA)	Schottky	-65 to 150	Active
B1100B-13-F	Diodes Incorporated	100	1	790 @ 1 A	≤500	500 @ 100 V	DO-214AA (SMB)	Schottky	-65 to 150	Active
B1100LB-13-F	Diodes Incorporated	100	1	750 @ 1 A	≤500	500 @ 100 V	DO-214AA (SMB)	Schottky	-65 to 175	Active
B1100Q-13-F	Diodes Incorporated	100	1	790 @ 1 A	≤500	—	DO-214AC (SMA)	Schottky	-65 to 155	Active
B2100A-13-F	Diodes Incorporated	100	2	790 @ 2 A	≤500	10 @ 100 V	DO-214AC (SMA)	Schottky	-65 to 125	Active
B2100AF-13	Diodes Incorporated	100	2	790 @ 2 A	≤500	10 @ 100 V	DO-221AC (SMAF)	Schottky	-55 to 150	Active
CDBA1100-HF	Comchip Technology	100	1	810 @ 1 A	≤500	500 @ 100 V	DO-214AC (SMA)	Schottky	-50 to 150	Active

Engineering Selection Recommendations

Primary Parametric Equivalent: ES2BAH

The ES2BAH is the recommended direct replacement for the ES2BAHM2G. Both parts are manufactured by Taiwan Semiconductor Corporation, share identical electrical specifications (100 V, 2 A, 950 mV forward voltage, 35 ns recovery time), operate across the same temperature range (-55°C to 150°C), and are packaged in DO-214AC (SMA). The ES2BAH maintains AEC-Q101 automotive qualification and is currently in active production status, ensuring long-term availability.

Secondary Parametric Equivalent: ES2BA

The ES2BA, manufactured by Good-Ark Semiconductor, provides an alternative with identical voltage and current ratings and the same package configuration. This part exhibits superior reverse leakage characteristics (5 µA versus 10 µA) and slightly lower forward voltage (920 mV versus 950 mV). The operating temperature range is reduced to -55°C to 125°C. The ES2BA is in active production status and suitable for applications not requiring the full 150°C upper temperature limit.

Tertiary Parametric Equivalent: ES2BA R3G

The ES2BA R3G, also from Taiwan Semiconductor Corporation, matches the ES2BAHM2G in all electrical parameters and temperature range but is discontinued at DiGi Electronics. This part is listed for reference only and should not be selected for new designs.

Similar Parts for Reduced Current Applications: B2100A-13-F and B2100AF-13

The B2100A-13-F and B2100AF-13, both from Diodes Incorporated, maintain the 100 V voltage rating and 2 A current capacity but employ Schottky technology instead of standard rectifier technology. The B2100A-13-F is packaged in DO-214AC (SMA), matching the original package form factor, while the B2100AF-13 uses DO-221AC (SMAF) with flat leads. Both parts exhibit lower forward voltage (790 mV at 2 A) and are in active production. These parts are suitable only when Schottky diode characteristics are acceptable for the application.

Similar Parts for 1 A Applications: B1100-13-F, B1100Q-13-F, CDBA1100-HF

The B1100-13-F and B1100Q-13-F from Diodes Incorporated, and CDBA1100-HF from Comchip Technology, are Schottky diodes rated for 1 A at 100 V in DO-214AC (SMA) packages. These parts are suitable only for circuits requiring 1 A or less. The B1100Q-13-F carries AEC-Q101 automotive qualification, matching the original part's automotive grade.

Frequently Asked Questions (FAQ)

Q: Can ES2BA be used as a direct replacement for ES2BAHM2G?

A: Yes. The ES2BA meets all electrical requirements: 100 V reverse voltage, 2 A current rating, fast recovery characteristics, and DO-214AC (SMA) package. The primary difference is the reduced operating temperature range (-55°C to 125°C versus -55°C to 150°C). Verify that your application does not require operation above 125°C junction temperature.

Q: What is the difference between the ES2BAH and ES2BA?

A: Both parts share identical electrical specifications and packaging. The ES2BAH is manufactured by Taiwan Semiconductor Corporation and maintains the original part's -55°C to 150°C temperature range. The ES2BA is manufactured by Good-Ark Semiconductor and operates to 125°C maximum. The ES2BA exhibits lower reverse leakage current (5 µA versus 10 µA) and slightly lower forward voltage (920 mV versus 950 mV).

Q: Why are Schottky diodes (B2100A-13-F, B2100AF-13) listed as similar parts rather than direct equivalents?

A: Schottky diodes employ different semiconductor technology than standard rectifier diodes. While both maintain 100 V and 2 A ratings, Schottky devices exhibit different reverse leakage characteristics (10 µA for B2100A-13-F versus 10 µA for ES2BAHM2G, but with different temperature dependencies), lower forward voltage drop, and different capacitance behavior. Schottky diodes are suitable only when the application circuit design accounts for these technology differences.

Q: Can I use a 1 A diode (B1100-13-F, B1100Q-13-F, CDBA1100-HF) instead of the 2 A ES2BAHM2G?

A: No. The 1 A parts are rated for maximum 1 A average rectified current. Using a 1 A part in a circuit designed for 2 A operation will cause device failure due to thermal stress and exceeding absolute maximum ratings. Current rating must match or exceed circuit requirements.

Q: What is the significance of the DO-214AC (SMA) package designation?

A: DO-214AC is the industry standard package outline for small surface mount diodes. SMA is the alternate designation for the same package. Parts specified as DO-214AC (SMA) are mechanically and electrically interchangeable in the same PCB footprint. Alternative packages such as DO-214AA (SMB) or DO-221AC (SMAF) require different PCB layouts and are not pin-compatible.

Q: Does the ES2BAH carry automotive qualification?

A: Yes. The ES2BAH is qualified to AEC-Q101 automotive standards, matching the original ES2BAHM2G. This qualification is maintained across the full -55°C to 150°C operating temperature range.

Q: What is the reverse recovery time, and why does it matter?

A: Reverse recovery time (trr) is the interval required for a forward-biased diode to cease conducting after the applied voltage reverses polarity. The ES2BAHM2G specifies 35 nanoseconds. All listed parametric equivalents maintain this specification. Schottky diodes (B2100A-13-F, B2100AF-13) specify ≤500 ns, which is acceptable for most applications but represents a broader specification window.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All parts listed in this reference are RoHS3 compliant and REACH unaffected, matching the original ES2BAHM2G compliance status.

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