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ES2A M4G Equivalent & Substitute Parts
Part Overview
The ES2A M4G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 50 V DC reverse voltage and 2 A average rectified current in a DO-214AA (SMB) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components that maintain functional compatibility within specified electrical and mechanical parameters.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Current - Average Rectified (Io) | 2 A |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 2 A |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
| Package / Case | DO-214AA, SMB |
| Operating Temperature - Junction | -55°C ~ 150°C |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitute parts for the ES2A M4G are categorized based on strict adherence to the following critical parameters:
Primary Substitution Criteria:
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 2 A
- Package / Case: DO-214AA, SMB
- Operating Temperature - Junction: -55°C ~ 150°C minimum
- RoHS Status: ROHS3 Compliant
Secondary Compatibility Parameters:
- Voltage - Forward (Vf) (Max) @ If: ≤ 950 mV @ 2 A
- Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): ≤ 35 ns
- Current - Reverse Leakage @ Vr: ≤ 10 µA @ 50 V
- Capacitance @ Vr, F: ≤ 25pF @ 4V, 1MHz
Parts meeting all primary criteria and matching secondary parameters are classified as parametric equivalents. Parts meeting primary criteria with variations in secondary parameters are classified as similar substitutes. Parts with different current ratings or package types are listed for reference but require application-level evaluation.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Vr (Max) | Io | Vf (Max) @ If | Speed | trr | Ir @ Vr | Package | Temp Range | Product Status |
|---|---|---|---|---|---|---|---|---|---|---|
| ES2A M4G | Taiwan Semiconductor Corporation | 50 V | 2 A | 950 mV @ 2 A | Fast Recovery ≤ 500ns | 35 ns | 10 µA @ 50 V | DO-214AA, SMB | -55°C ~ 150°C | Discontinued |
| ES2A | YAGEO | 50 V | 2 A | 950 mV @ 2 A | Not specified | Not specified | Not specified | DO-214AA, SMB | Not specified | Active |
| ES2AH | Taiwan Semiconductor Corporation | 50 V | 2 A | 950 mV @ 2 A | Fast Recovery ≤ 500ns | 35 ns | 10 µA @ 50 V | DO-214AA, SMB | -55°C ~ 150°C | Active |
| CGRB201-G | Comchip Technology | 50 V | 2 A | 1.1 V @ 2 A | Standard Recovery >500ns | Not specified | 5 µA @ 50 V | DO-214AA, SMB | -55°C ~ 150°C | Active |
| CSFB201-G | Comchip Technology | 50 V | 2 A | 920 mV @ 2 A | Fast Recovery ≤ 500ns | 35 ns | 5 µA @ 50 V | DO-214AA, SMB | -55°C ~ 150°C | Active |
| ES2A-13-F | Diodes Incorporated | 50 V | 2 A | 920 mV @ 2 A | Fast Recovery ≤ 500ns | 25 ns | 5 µA @ 50 V | DO-214AA, SMB | -55°C ~ 150°C | Active |
| ES2AA-13-F | Diodes Incorporated | 50 V | 2 A | 920 mV @ 2 A | Fast Recovery ≤ 500ns | 25 ns | 5 µA @ 50 V | DO-214AC, SMA | -55°C ~ 150°C | Active |
| ES2AHE3_A/H | Vishay General Semiconductor - Diodes Division | 50 V | 2 A | 900 mV @ 2 A | Fast Recovery ≤ 500ns | 20 ns | 10 µA @ 50 V | DO-214AA, SMB | -55°C ~ 150°C | Active |
| ES2AHE3_A/I | Vishay General Semiconductor - Diodes Division | 50 V | 2 A | 900 mV @ 2 A | Fast Recovery ≤ 500ns | 20 ns | 10 µA @ 50 V | DO-214AA, SMB | -55°C ~ 150°C | Active |
| ES2AHM3/5BT | Vishay General Semiconductor - Diodes Division | 50 V | 2 A | 900 mV @ 2 A | Fast Recovery ≤ 500ns | 30 ns | 10 µA @ 50 V | DO-214AA, SMB | -55°C ~ 150°C | Active |
Engineering Selection Recommendations
Parametric Equivalent (Direct Replacement):
ES2AH (Taiwan Semiconductor Corporation) is the primary parametric equivalent to ES2A M4G. This part maintains identical electrical specifications across all critical parameters: 50 V reverse voltage, 2 A average rectified current, 950 mV forward voltage at 2 A, fast recovery speed classification, 35 ns reverse recovery time, and identical package configuration. ES2AH is currently active in production and ROHS3 compliant. The automotive-grade qualification (AEC-Q101) of ES2AH provides additional reliability assurance for applications requiring automotive-level component standards.
Fast Recovery Substitutes (Electrical Equivalence with Minor Variations):
ES2A-13-F (Diodes Incorporated), CSFB201-G (Comchip Technology), ES2AHE3_A/H, ES2AHE3_A/I, and ES2AHM3/5BT (Vishay General Semiconductor - Diodes Division) are fast recovery substitutes meeting the primary substitution criteria. These parts maintain 50 V reverse voltage, 2 A current rating, DO-214AA SMB package, and -55°C to 150°C operating temperature range. Forward voltage specifications range from 900 mV to 920 mV at 2 A, which is lower than the original 950 mV specification, indicating improved performance characteristics. Reverse recovery times range from 20 ns to 35 ns, all within acceptable limits. Reverse leakage current is specified at 5 µA to 10 µA at 50 V. All listed parts are ROHS3 compliant and currently active in production.
Standard Recovery Substitute (Functional Compatibility with Performance Trade-off):
CGRB201-G (Comchip Technology) meets primary substitution criteria for voltage, current, package, and temperature range. This part operates at standard recovery speed classification (>500ns), which differs from the fast recovery specification of the original part. Forward voltage is specified at 1.1 V at 2 A, representing a 150 mV increase over the original specification. This part is ROHS3 compliant and currently active in production. Application-level evaluation is required to determine acceptability of the slower recovery speed and higher forward voltage drop.
Package Variant (Mechanical Substitution Only):
ES2AA-13-F (Diodes Incorporated) is electrically equivalent to ES2A-13-F but uses DO-214AC (SMA) package instead of DO-214AA (SMB). This part is suitable only for applications where SMA package footprint is acceptable. Direct PCB footprint compatibility with DO-214AA SMB designs is not possible without board redesign.
YAGEO ES2A (Limited Specification Data):
YAGEO ES2A meets primary substitution criteria for voltage, current, and package. Complete electrical specifications for secondary parameters are not provided in available data. This part is currently active in production and ROHS3 compliant. Verification of secondary electrical parameters with the manufacturer is recommended prior to design implementation.
Frequently Asked Questions (FAQ)
Q: Can ES2AH be used as a direct replacement for ES2A M4G?
A: Yes. ES2AH is a parametric equivalent meeting all electrical and mechanical specifications of ES2A M4G. Both parts are rated for 50 V reverse voltage, 2 A average rectified current, 950 mV forward voltage at 2 A, fast recovery speed, 35 ns reverse recovery time, and operate across -55°C to 150°C. Both use DO-214AA SMB packaging. ES2AH is currently in active production.
Q: What is the difference between fast recovery and standard recovery diodes?
A: Recovery speed classification refers to the reverse recovery time (trr), which is the time required for a diode to switch from forward conduction to reverse blocking state. Fast recovery diodes have trr ≤ 500ns for currents > 200mA and are suitable for high-frequency switching applications. Standard recovery diodes have trr >500ns and are suitable for lower-frequency rectification applications. CGRB201-G is a standard recovery substitute; all other listed substitutes are fast recovery devices.
Q: Can CGRB201-G replace ES2A M4G in all applications?
A: CGRB201-G meets primary substitution criteria but operates at standard recovery speed (>500ns) versus the original fast recovery specification (≤500ns). Forward voltage is 1.1 V at 2 A compared to 950 mV for the original part. These differences result in higher power dissipation and slower switching response. Application-level evaluation is required to determine acceptability based on circuit operating frequency and thermal constraints.
Q: Why is ES2AA-13-F listed if it uses a different package?
A: ES2AA-13-F uses DO-214AC (SMA) package instead of DO-214AA (SMB). While electrically equivalent, it is mechanically incompatible with designs using SMB footprints. This part is listed for reference in applications where package redesign is feasible or where SMA footprint is already specified.
Q: Are all listed substitutes ROHS3 compliant?
A: Yes. All substitute parts listed in the parameter comparison table are ROHS3 compliant and have MSL rating of 1 (Unlimited), matching the original ES2A M4G specifications.
Q: What is the significance of AEC-Q101 qualification on ES2AH and Vishay parts?
A: AEC-Q101 is an automotive electronics qualification standard. Parts bearing this qualification have undergone additional reliability testing and are suitable for automotive applications requiring enhanced component reliability assurance. ES2AH and the Vishay ES2AHE3 and ES2AHM3 series carry this qualification, making them suitable for automotive circuit designs.
Q: How do reverse leakage current specifications affect part selection?
A: Reverse leakage current (Ir) is the small current flowing through a reverse-biased diode. The original ES2A M4G specifies 10 µA at 50 V. Substitute parts specify 5 µA to 10 µA at 50 V. Lower leakage current indicates better reverse blocking characteristics and lower power dissipation in reverse bias conditions. All listed substitutes meet or exceed the original specification.
Q: Can YAGEO ES2A be used without additional verification?
A: YAGEO ES2A meets primary substitution criteria for voltage, current, and package. However, complete electrical specifications for secondary parameters (forward voltage, recovery time, leakage current, capacitance) are not provided in available data. Manufacturer datasheet verification is recommended prior to design implementation to confirm compatibility with circuit requirements.
Q: What is the difference between ES2A-13-F and ES2AA-13-F?
A: Both parts are manufactured by Diodes Incorporated and are electrically equivalent. ES2A-13-F uses DO-214AA (SMB) package, while ES2AA-13-F uses DO-214AC (SMA) package. SMB is the larger package suitable for higher current applications; SMA is the smaller package. For ES2A M4G replacement, ES2A-13-F is the appropriate choice due to package compatibility.
Q: Are there any temperature range differences among the substitutes?
A: All listed substitutes maintain the original -55°C to 150°C junction temperature operating range, except CGRB201-G and CSFB201-G which specify 150°C as maximum (implying -55°C minimum based on standard industrial practice). All parts are suitable for the full temperature range of the original ES2A M4G.
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