ES2AAHR3G Equivalent & Substitute Parts

Part Overview

The ES2AAHR3G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 50 V DC reverse voltage and 2 A average rectified current in a DO-214AC (SMA) surface mount package. This part is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design requirements and production needs. The device features fast recovery characteristics with a reverse recovery time of 35 ns and operates across a junction temperature range of -55°C to 150°C. Equivalent parts maintain identical electrical specifications, while substitute parts offer functional alternatives with modified parameters suitable for specific application requirements.

Substiute Parts

ES2AAHR3G
Taiwan Semiconductor CorporationIn Stock: 1145ES2AAHR3G Datasheet
ES2AAHR3G
Current Part
ES2AA
Taiwan Semiconductor CorporationIn Stock: 10206ES2AA Datasheet
ES2AA
Parametric Equivalent
ES2AAH
Taiwan Semiconductor CorporationIn Stock: 920ES2AAH Datasheet
ES2AAH
Parametric Equivalent
B150-13-F
Diodes IncorporatedIn Stock: 25484B150-13-F Datasheet
B150-13-F
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B150-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 859B150-E3/5AT Datasheet
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B150-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 11007B150-E3/61T Datasheet
B150-E3/61T
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B150B-13-F
Diodes IncorporatedIn Stock: 3221B150B-13-F Datasheet
B150B-13-F
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B150Q-13-F
Diodes IncorporatedIn Stock: 40205B150Q-13-F Datasheet
B150Q-13-F
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B250AQ-13-F
Diodes IncorporatedIn Stock: 1142B250AQ-13-F Datasheet
B250AQ-13-F
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CFRA101-G
Comchip TechnologyIn Stock: 1109CFRA101-G Datasheet
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CGRA4001-G
Comchip TechnologyIn Stock: 10292CGRA4001-G Datasheet
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ES1A-13-F
Diodes IncorporatedIn Stock: 70327ES1A-13-F Datasheet
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ES1A-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 20190ES1A-E3/5AT Datasheet
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ES1A-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 75168ES1A-E3/61T Datasheet
ES1A-E3/61T
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ES1A-LTP
Micro Commercial CoIn Stock: 5443ES1A-LTP Datasheet
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ES1A-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1061ES1A-M3/5AT Datasheet
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ES1A-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 12684ES1A-M3/61T Datasheet
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ES1AHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 4243ES1AHE3_A/H Datasheet
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ES1AHE3_A/I
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ES2A-LTP
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GS1A-LTP
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GS2A-LTP
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HSM150JE3/TR13
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RS1A-13-F
Diodes IncorporatedIn Stock: 10435RS1A-13-F Datasheet
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RS1A-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 7704RS1A-E3/5AT Datasheet
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RS1A-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 5314RS1A-E3/61T Datasheet
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RS1A-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 820RS1A-M3/5AT Datasheet
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RS1A-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 917RS1A-M3/61T Datasheet
RS1A-M3/61T
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RS1AB-13-F
Diodes IncorporatedIn Stock: 15312RS1AB-13-F Datasheet
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RS1AHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 903RS1AHE3_A/H Datasheet
RS1AHE3_A/H
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RS1AHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 965RS1AHE3_A/I Datasheet
RS1AHE3_A/I
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RS1B-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 894RS1B-M3/61T Datasheet
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S1A-13-F
Diodes IncorporatedIn Stock: 100403S1A-13-F Datasheet
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S1A-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 15318S1A-E3/5AT Datasheet
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S1A-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 120879S1A-E3/61T Datasheet
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S1A-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 859S1A-M3/5AT Datasheet
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S1A-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 13625S1A-M3/61T Datasheet
S1A-M3/61T
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S1AB-13-F
Diodes IncorporatedIn Stock: 39805S1AB-13-F Datasheet
S1AB-13-F
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S1AHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 70236S1AHE3_A/H Datasheet
S1AHE3_A/H
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S1AHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 921S1AHE3_A/I Datasheet
S1AHE3_A/I
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SK35A-LTP
Micro Commercial CoIn Stock: 2121SK35A-LTP Datasheet
SK35A-LTP
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SS15-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 5314SS15-E3/5AT Datasheet
SS15-E3/5AT
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SS15-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 18243SS15-E3/61T Datasheet
SS15-E3/61T
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SS25-LTP
Micro Commercial CoIn Stock: 10170SS25-LTP Datasheet
SS25-LTP
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UFS105JE3/TR13
Microchip TechnologyIn Stock: 756UFS105JE3/TR13 Datasheet
UFS105JE3/TR13
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US1A-13-F
Diodes IncorporatedIn Stock: 25367US1A-13-F Datasheet
US1A-13-F
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US1A-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 5736US1A-E3/5AT Datasheet
US1A-E3/5AT
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US1A-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 4006US1A-E3/61T Datasheet
US1A-E3/61T
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US1A-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1178US1A-M3/5AT Datasheet
US1A-M3/5AT
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US1A-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 13748US1A-M3/61T Datasheet
US1A-M3/61T
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US1A-TP
Micro Commercial CoIn Stock: 4028US1A-TP Datasheet
US1A-TP
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US1AHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1188US1AHE3_A/H Datasheet
US1AHE3_A/H
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US1AHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1141US1AHE3_A/I Datasheet
US1AHE3_A/I
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AES2AF-HF
Comchip TechnologyIn Stock: 818AES2AF-HF Datasheet
AES2AF-HF
Parametric Equivalent
ES2A_R1_00001
Panjit International Inc.In Stock: 2818ES2A_R1_00001 Datasheet
ES2A_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 2 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 2 A mV
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 50 V
Capacitance @ Vr, F 25 pF @ 4V, 1MHz
Package / Case DO-214AC, SMA
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
Technology Standard
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the ES2AAHR3G is determined by alignment of critical electrical and mechanical parameters. The primary substitution criteria are:

Parametric Equivalents maintain all key specifications: 50 V reverse voltage rating, 2 A average rectified current, 950 mV forward voltage at 2 A, 35 ns reverse recovery time, 10 µA reverse leakage current, and DO-214AC (SMA) package configuration. These parts are direct functional replacements with identical performance characteristics.

Similar Substitutes share the same package format (DO-214AC/SMA) and voltage rating (50 V) but differ in one or more of the following parameters: current rating (reduced to 1 A), forward voltage characteristics, reverse leakage current, technology type (Schottky versus Standard), or reverse recovery time. These parts are suitable for applications where the reduced current rating or alternative technology does not compromise circuit performance.

The substitution logic prioritizes package compatibility, voltage rating preservation, and current capacity sufficiency for the target application.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [mV] trr [ns] Ir @ Vr [µA] Technology Package Product Status
ES2AAHR3G Taiwan Semiconductor Corporation 50 2 950 @ 2A 35 10 @ 50V Standard DO-214AC (SMA) Discontinued
ES2AA Taiwan Semiconductor Corporation 50 2 950 @ 2A 35 10 @ 50V Standard DO-214AC (SMA) Active
ES2AAH Taiwan Semiconductor Corporation 50 2 950 @ 2A 35 10 @ 50V Standard DO-214AC (SMA) Active
B150-13-F Diodes Incorporated 50 1 700 @ 1A ≤500 500 @ 50V Schottky DO-214AC (SMA) Active
B150-E3/5AT Vishay General Semiconductor - Diodes Division 50 1 750 @ 1A ≤500 200 @ 50V Schottky DO-214AC (SMA) Active
B150-E3/61T Vishay General Semiconductor - Diodes Division 50 1 750 @ 1A ≤500 200 @ 50V Schottky DO-214AC (SMA) Active
B150B-13-F Diodes Incorporated 50 1 700 @ 1A ≤500 500 @ 50V Schottky DO-214AA (SMB) Active
B150Q-13-F Diodes Incorporated 50 1 700 @ 1A ≤500 500 @ 40V Schottky DO-214AC (SMA) Active
B250AQ-13-F Diodes Incorporated 50 2 700 @ 2A ≤500 500 @ 50V Schottky DO-214AC (SMA) Active
CFRA101-G Comchip Technology 50 1 1300 @ 1A ≤500 5 @ 50V Standard DO-214AC (SMA) Active
CGRA4001-G Comchip Technology 50 1 1100 @ 1A >500 5 @ 50V Standard DO-214AC (SMA) Active

Engineering Selection Recommendations

Parametric Equivalents (Direct Replacements)

ES2AA and ES2AAH are parametric equivalents of the ES2AAHR3G, maintaining identical electrical specifications and package configuration. Both parts are manufactured by Taiwan Semiconductor Corporation and are classified as active products. ES2AA is supplied in Tape & Reel packaging with 10,100 pieces in stock inventory. ES2AAH is supplied in Tape & Reel packaging with automotive-grade qualification (AEC-Q101) and 850 pieces in stock inventory. Both parts are ROHS3 compliant and REACH unaffected. Selection between ES2AA and ES2AAH depends on application requirements for automotive qualification; ES2AAH is suitable for automotive applications requiring AEC-Q101 certification.

Similar Substitutes (Current Rating Reduction)

B150-13-F, B150-E3/5AT, B150-E3/61T, and B150Q-13-F are Schottky diodes with 50 V reverse voltage rating and 1 A average rectified current. These parts are suitable for applications where the circuit current requirement does not exceed 1 A. B150Q-13-F includes automotive-grade qualification (AEC-Q101). The Schottky technology provides lower forward voltage (700–750 mV @ 1 A) compared to the standard technology of the ES2AAHR3G (950 mV @ 2 A), resulting in reduced power dissipation in low-current applications.

Similar Substitutes (Current Rating Match with Schottky Technology)

B250AQ-13-F is a Schottky diode with 50 V reverse voltage rating and 2 A average rectified current, matching the current capacity of the ES2AAHR3G. This part includes automotive-grade qualification (AEC-Q101) and provides lower forward voltage (700 mV @ 2 A) compared to the standard technology of the main part. B250AQ-13-F is suitable for applications requiring the full 2 A current capacity with Schottky technology benefits.

Similar Substitutes (Standard Technology, Current Rating Reduction)

CFRA101-G and CGRA4001-G are standard-technology diodes manufactured by Comchip Technology with 50 V reverse voltage rating and 1 A average rectified current. CFRA101-G features fast recovery characteristics (≤500 ns) with 35 ns reverse recovery time specification. CGRA4001-G features standard recovery characteristics (>500 ns). Both parts are suitable for applications where the circuit current requirement does not exceed 1 A and standard technology is preferred.

All substitute parts maintain ROHS3 compliance and REACH unaffected status. Selection criteria include current requirement sufficiency, technology preference (Schottky versus Standard), automotive qualification necessity, and inventory availability.

Frequently Asked Questions (FAQ)

Q: Can ES2AA or ES2AAH be used as direct replacements for ES2AAHR3G?

A: Yes. ES2AA and ES2AAH are parametric equivalents with identical electrical specifications (50 V, 2 A, 950 mV forward voltage, 35 ns recovery time) and package configuration (DO-214AC/SMA). Both are active products from Taiwan Semiconductor Corporation. ES2AAH includes automotive-grade qualification (AEC-Q101) if required by the application.

Q: What is the difference between the ES2AAHR3G and B250AQ-13-F?

A: Both parts share 50 V reverse voltage rating and 2 A average rectified current capacity with DO-214AC (SMA) package compatibility. The primary differences are: (1) Technology type—ES2AAHR3G uses standard rectifier technology while B250AQ-13-F uses Schottky technology; (2) Forward voltage—ES2AAHR3G specifies 950 mV @ 2 A while B250AQ-13-F specifies 700 mV @ 2 A; (3) Reverse leakage—ES2AAHR3G specifies 10 µA @ 50 V while B250AQ-13-F specifies 500 µA @ 50 V; (4) Manufacturer—ES2AAHR3G is Taiwan Semiconductor Corporation while B250AQ-13-F is Diodes Incorporated; (5) Qualification—B250AQ-13-F includes automotive-grade qualification (AEC-Q101).

Q: Can I use a 1 A rated diode (such as B150-E3/61T) in place of the 2 A rated ES2AAHR3G?

A: Substitution with a 1 A rated diode is permissible only if the circuit design ensures that the average rectified current does not exceed 1 A under all operating conditions, including transient and fault scenarios. The 50 V reverse voltage rating and DO-214AC (SMA) package are compatible. B150-E3/61T is a Schottky diode with lower forward voltage (750 mV @ 1 A) compared to the ES2AAHR3G (950 mV @ 2 A), which may reduce power dissipation in current-limited applications.

Q: What is the significance of the Schottky technology in B150 and B250 series diodes?

A: Schottky diodes exhibit lower forward voltage drop compared to standard rectifier diodes, resulting in reduced power dissipation and improved efficiency in switching applications. The B150 series (1 A) and B250AQ-13-F (2 A) Schottky diodes provide forward voltages of 700–750 mV compared to the ES2AAHR3G standard rectifier forward voltage of 950 mV. However, Schottky diodes typically exhibit higher reverse leakage current (200–500 µA @ 50 V for B150/B250 series versus 10 µA @ 50 V for ES2AAHR3G). Selection depends on application priorities regarding power dissipation versus leakage current characteristics.

Q: Are all substitute parts ROHS3 compliant and REACH unaffected?

A: Yes. All parts listed in the parameter comparison table are ROHS3 compliant and REACH unaffected, meeting environmental and regulatory requirements for electronic component manufacturing and distribution.

Q: What packaging options are available for substitute parts?

A: The majority of substitute parts are supplied in DO-214AC (SMA) surface mount package, matching the ES2AAHR3G package configuration. B150B-13-F is supplied in DO-214AA (SMB) package, which is a larger surface mount package. Packaging selection depends on circuit board layout and thermal management requirements. SMB packages provide improved thermal dissipation compared to SMA packages due to larger copper pad area.

Q: Which substitute parts include automotive-grade qualification?

A: ES2AAH, B150Q-13-F, and B250AQ-13-F include automotive-grade qualification (AEC-Q101). These parts are suitable for automotive applications requiring compliance with automotive industry standards. Selection of automotive-qualified parts is necessary for applications subject to automotive reliability and qualification requirements.

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