ES1LG R3G Equivalent & Substitute Parts

Part Overview

The ES1LG R3G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 400 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This part is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. The device features fast recovery characteristics with a reverse recovery time of 35 nanoseconds and operates across a junction temperature range of -55°C to 150°C.

Substiute Parts

ES1LG R3G
Taiwan Semiconductor CorporationIn Stock: 961ES1LG R3G Datasheet
ES1LG R3G
Current Part
ES1G
Good-Ark SemiconductorIn Stock: 415377ES1G Datasheet
ES1G
Parametric Equivalent
ES1GH
Taiwan Semiconductor CorporationIn Stock: 1173ES1GH Datasheet
ES1GH
Parametric Equivalent
HS1G
SURGEIn Stock: 7297HS1G Datasheet
HS1G
Parametric Equivalent
HS1G
SURGEIn Stock: 7297HS1G Datasheet
HS1G
Parametric Equivalent
RS1G
Taiwan Semiconductor CorporationIn Stock: 25431RS1G Datasheet
RS1G
Parametric Equivalent
RS1G R3G
Taiwan Semiconductor CorporationIn Stock: 265557RS1G R3G Datasheet
RS1G R3G
Parametric Equivalent
RS1GH
Taiwan Semiconductor CorporationIn Stock: 16067RS1GH Datasheet
RS1GH
Parametric Equivalent
CSFA104-G
Comchip TechnologyIn Stock: 667CSFA104-G Datasheet
CSFA104-G
Direct
CGRA4004-G
Comchip TechnologyIn Stock: 20203CGRA4004-G Datasheet
CGRA4004-G
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ES1G-13-F
Diodes IncorporatedIn Stock: 420370ES1G-13-F Datasheet
ES1G-13-F
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ES2G-LTP
Micro Commercial CoIn Stock: 783ES2G-LTP Datasheet
ES2G-LTP
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GS1G-LTP
Micro Commercial CoIn Stock: 14366GS1G-LTP Datasheet
GS1G-LTP
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GS2G-LTP
Micro Commercial CoIn Stock: 30669GS2G-LTP Datasheet
GS2G-LTP
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RS1G-13-F
Diodes IncorporatedIn Stock: 115102RS1G-13-F Datasheet
RS1G-13-F
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RS1GB-13-F
Diodes IncorporatedIn Stock: 1912RS1GB-13-F Datasheet
RS1GB-13-F
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S1G-13-F
Diodes IncorporatedIn Stock: 156110S1G-13-F Datasheet
S1G-13-F
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S1GB-13-F
Diodes IncorporatedIn Stock: 69736S1GB-13-F Datasheet
S1GB-13-F
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S1GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 188837S1GHE3_A/H Datasheet
S1GHE3_A/H
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S1GHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1055149S1GHE3_A/I Datasheet
S1GHE3_A/I
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STTH1R04A
STMicroelectronicsIn Stock: 19331STTH1R04A Datasheet
STTH1R04A
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STTH1R04AY
STMicroelectronicsIn Stock: 26262STTH1R04AY Datasheet
STTH1R04AY
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US1G-13-F
Diodes IncorporatedIn Stock: 155328US1G-13-F Datasheet
US1G-13-F
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US1G-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 16224US1G-M3/5AT Datasheet
US1G-M3/5AT
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US1G-TP
Micro Commercial CoIn Stock: 19143US1G-TP Datasheet
US1G-TP
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US1GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 59196US1GHE3_A/H Datasheet
US1GHE3_A/H
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US1GHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 26827US1GHE3_A/I Datasheet
US1GHE3_A/I
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US2GA-TP
Micro Commercial CoIn Stock: 2323US2GA-TP Datasheet
US2GA-TP
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ES1G
Good-Ark SemiconductorIn Stock: 415377ES1G Datasheet
ES1G
Parametric Equivalent
RS1G
Taiwan Semiconductor CorporationIn Stock: 25431RS1G Datasheet
RS1G
Parametric Equivalent
RS1G-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 20115RS1G-E3/5AT Datasheet
RS1G-E3/5AT
Parametric Equivalent
RS1G-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 24212RS1G-E3/61T Datasheet
RS1G-E3/61T
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RS1G-HF
Comchip TechnologyIn Stock: 716RS1G-HF Datasheet
RS1G-HF
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RS1G-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 839RS1G-M3/5AT Datasheet
RS1G-M3/5AT
Parametric Equivalent
RS1G-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 890RS1G-M3/61T Datasheet
RS1G-M3/61T
Parametric Equivalent
RS1G_R1_00001
Panjit International Inc.In Stock: 4964RS1G_R1_00001 Datasheet
RS1G_R1_00001
Parametric Equivalent
RS1GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 8993RS1GHE3_A/H Datasheet
RS1GHE3_A/H
Parametric Equivalent
RS1GHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 5816RS1GHE3_A/I Datasheet
RS1GHE3_A/I
Parametric Equivalent
US1G_R1_00001
Panjit International Inc.In Stock: 505747US1G_R1_00001 Datasheet
US1G_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 400 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.3 @ 1 A V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 400 V
Package / Case DO-214AC, SMA
Operating Temperature - Junction -55 to 150 °C
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the ES1LG R3G is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC, SMA
  • Mounting Type: Surface Mount
  • Operating Temperature - Junction: -55°C to 150°C (or higher)

Secondary Compatibility Factors:

  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A or lower
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • RoHS Status: ROHS3 Compliant

Parts are grouped into three categories based on their relationship to the main part:

Parametric Equivalents: Parts meeting all primary equivalence criteria with identical or superior electrical performance characteristics.

Direct Manufacturers: Parts from alternative manufacturers with matching specifications and package designation.

Similar Parts: Components with the same voltage and current ratings but differing in secondary characteristics such as recovery time or forward voltage, suitable for applications with relaxed speed requirements.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [ns] Speed Package Temp Range [°C] Product Status
ES1LG R3G Taiwan Semiconductor Corporation 400 1 1.3 @ 1 A 35 Fast Recovery ≤ 500ns DO-214AC, SMA -55 to 150 Discontinued at DiGi Electronics
ES1G Good-Ark Semiconductor 400 1 1.3 @ 1 A 35 Fast Recovery ≤ 500ns DO-214AC, SMA -55 to 125 Active
ES1GH Taiwan Semiconductor Corporation 400 1 1.3 @ 1 A 35 Fast Recovery ≤ 500ns DO-214AC, SMA -55 to 150 Active
HS1G SURGE 400 1 1.3 @ 1 A 50 Fast Recovery ≤ 500ns DO-214AC, SMA -55 to 150 Active
RS1G Taiwan Semiconductor Corporation 400 1 1.3 @ 1 A 150 Fast Recovery ≤ 500ns DO-214AC, SMA -55 to 150 Active
RS1G R3G Taiwan Semiconductor Corporation 400 1 1.3 @ 1 A 150 Fast Recovery ≤ 500ns DO-214AC, SMA -55 to 150 Discontinued at DiGi Electronics
RS1GH Taiwan Semiconductor Corporation 400 1 1.3 @ 1 A 150 Fast Recovery ≤ 500ns DO-214AC, SMA -55 to 150 Active
CSFA104-G Comchip Technology 400 1 1.25 @ 1 A 35 Fast Recovery ≤ 500ns DO-214AC, SMA -55 to 150 Active
CGRA4004-G Comchip Technology 400 1 1.1 @ 1 A Standard Recovery >500ns DO-214AC, SMA -55 to 150 Active
ES1G-13-F Diodes Incorporated 400 1 1.25 @ 1 A 25 Fast Recovery ≤ 500ns DO-214AC, SMA -55 to 150 Active

Engineering Selection Recommendations

Primary Recommendation for Direct Replacement:

ES1GH (Taiwan Semiconductor Corporation) is the primary equivalent for ES1LG R3G. This part maintains identical electrical specifications including 400 V reverse voltage, 1 A average rectified current, 1.3 V forward voltage at 1 A, and 35 nanosecond reverse recovery time. The operating temperature range extends to 150°C, matching the original part. ES1GH is currently active in production and carries AEC-Q101 automotive qualification, providing enhanced reliability documentation. RoHS3 compliance and REACH unaffected status are maintained.

Secondary Recommendations:

RS1GH (Taiwan Semiconductor Corporation) provides full electrical equivalence with identical voltage and current ratings, operating temperature range, and RoHS3 compliance. The reverse recovery time of 150 nanoseconds represents a trade-off; this part is suitable for applications where faster switching is not critical. AEC-Q101 automotive qualification is included.

ES1G-13-F (Diodes Incorporated) offers fast recovery characteristics with 25 nanosecond reverse recovery time, superior to the original part. Forward voltage is 1.25 V at 1 A, within acceptable tolerance. This part is actively produced with high inventory availability and full RoHS3 compliance.

CSFA104-G (Comchip Technology) matches the original 35 nanosecond reverse recovery time with forward voltage of 1.25 V at 1 A. All voltage and current ratings are identical. Active production status and RoHS3 compliance are confirmed.

Not Recommended for Direct Substitution:

CGRA4004-G exhibits standard recovery characteristics (>500 ns) rather than fast recovery, making it unsuitable for applications requiring the fast switching performance of the original ES1LG R3G.

HS1G (SURGE) has a reverse recovery time of 50 nanoseconds, which is slower than the original 35 nanoseconds. REACH status is listed as vendor undefined, introducing compliance uncertainty.

Frequently Asked Questions (FAQ)

Q: Can ES1GH directly replace ES1LG R3G in all applications?

A: ES1GH is a direct parametric equivalent with identical voltage (400 V), current (1 A), forward voltage (1.3 V @ 1 A), and reverse recovery time (35 ns) specifications. The operating temperature range of -55°C to 150°C matches the original part. ES1GH is suitable for direct replacement in all applications where ES1LG R3G was specified.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Recovery speed is determined by reverse recovery time (trr). Fast recovery diodes have trr ≤ 500 ns and are specified for applications requiring rapid switching transitions. Standard recovery diodes have trr > 500 ns and are used in lower-frequency applications. The ES1LG R3G specifies fast recovery with 35 ns trr. Substitutes must maintain this classification unless application requirements explicitly permit slower recovery.

Q: Are there inventory advantages to selecting alternative manufacturers?

A: Yes. ES1G (Good-Ark Semiconductor) has 415,300 pieces in stock. ES1G-13-F (Diodes Incorporated) has 420,300 pieces available. CGRA4004-G (Comchip Technology) has 20,100 pieces. These inventory levels exceed the 855 pieces available for the original ES1LG R3G, providing supply chain advantages for high-volume production.

Q: Does forward voltage variation affect circuit performance?

A: Forward voltage differences of 0.05 V to 0.15 V between substitutes (ranging from 1.1 V to 1.3 V @ 1 A) are within typical design tolerances for rectifier applications. However, designs with tight voltage regulation or high-precision requirements should verify compatibility through circuit simulation or prototype testing.

Q: What is the significance of AEC-Q101 qualification?

A: AEC-Q101 is an automotive industry qualification standard for discrete semiconductors. Parts carrying this qualification (ES1GH and RS1GH) have undergone enhanced reliability testing and are suitable for automotive applications. Non-qualified parts are suitable for general industrial and consumer applications.

Q: Can I use RS1GH instead of ES1GH if cost is a factor?

A: RS1GH has identical voltage, current, and temperature specifications but features a reverse recovery time of 150 ns compared to ES1GH's 35 ns. This slower recovery is acceptable for applications operating at lower switching frequencies or where switching losses are not critical. Both parts carry AEC-Q101 qualification and RoHS3 compliance.

Q: What packaging options are available?

A: The ES1LG R3G is supplied in Cut Tape (CT) packaging. Equivalent parts are available in multiple packaging formats: Cut Tape (CT), Tape & Reel (TR), Digi-Reel®, and Bag. Selection should match production equipment requirements. Tape & Reel packaging (ES1GH, RS1GH, CSFA104-G, ES1G-13-F) is standard for automated assembly.

Q: Are all substitute parts RoHS3 compliant?

A: All recommended substitute parts carry ROHS3 Compliant status. This ensures compliance with European Union Restriction of Hazardous Substances regulations and is required for most commercial and industrial applications.

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