ES1LG Equivalent & Substitute Parts

Part Overview

The ES1LG is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 400 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This component is classified as obsolete, indicating discontinuation from the original manufacturer. Identification of equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this rectifier specification.

Substiute Parts

ES1LG
Taiwan Semiconductor CorporationIn Stock: 894ES1LG Datasheet
ES1LG
Current Part
ES1G
Good-Ark SemiconductorIn Stock: 415377ES1G Datasheet
ES1G
Parametric Equivalent
ES1GH
Taiwan Semiconductor CorporationIn Stock: 1173ES1GH Datasheet
ES1GH
Parametric Equivalent
HS1G
SURGEIn Stock: 7297HS1G Datasheet
HS1G
Parametric Equivalent
HS1G
SURGEIn Stock: 7297HS1G Datasheet
HS1G
Parametric Equivalent
RS1G
Taiwan Semiconductor CorporationIn Stock: 25431RS1G Datasheet
RS1G
Parametric Equivalent
RS1G R3G
Taiwan Semiconductor CorporationIn Stock: 265557RS1G R3G Datasheet
RS1G R3G
Parametric Equivalent
RS1GH
Taiwan Semiconductor CorporationIn Stock: 16067RS1GH Datasheet
RS1GH
Parametric Equivalent
CSFA104-G
Comchip TechnologyIn Stock: 667CSFA104-G Datasheet
CSFA104-G
Direct
CGRA4004-G
Comchip TechnologyIn Stock: 20203CGRA4004-G Datasheet
CGRA4004-G
Similar
ES1G-13-F
Diodes IncorporatedIn Stock: 420370ES1G-13-F Datasheet
ES1G-13-F
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ES2G-LTP
Micro Commercial CoIn Stock: 783ES2G-LTP Datasheet
ES2G-LTP
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GS1G-LTP
Micro Commercial CoIn Stock: 14366GS1G-LTP Datasheet
GS1G-LTP
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GS2G-LTP
Micro Commercial CoIn Stock: 30669GS2G-LTP Datasheet
GS2G-LTP
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RS1G-13-F
Diodes IncorporatedIn Stock: 115102RS1G-13-F Datasheet
RS1G-13-F
Similar
RS1GB-13-F
Diodes IncorporatedIn Stock: 1912RS1GB-13-F Datasheet
RS1GB-13-F
Similar
RS2GA-13-F
Diodes IncorporatedIn Stock: 9945RS2GA-13-F Datasheet
RS2GA-13-F
Similar
S1G-13-F
Diodes IncorporatedIn Stock: 156110S1G-13-F Datasheet
S1G-13-F
Similar
S1GB-13-F
Diodes IncorporatedIn Stock: 69736S1GB-13-F Datasheet
S1GB-13-F
Similar
S1GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 188837S1GHE3_A/H Datasheet
S1GHE3_A/H
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S1GHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1055149S1GHE3_A/I Datasheet
S1GHE3_A/I
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SA2G-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1210SA2G-M3/61T Datasheet
SA2G-M3/61T
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STTH1R04A
STMicroelectronicsIn Stock: 19331STTH1R04A Datasheet
STTH1R04A
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STTH1R04AY
STMicroelectronicsIn Stock: 26262STTH1R04AY Datasheet
STTH1R04AY
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US1G-13-F
Diodes IncorporatedIn Stock: 155328US1G-13-F Datasheet
US1G-13-F
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US1G-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 16224US1G-M3/5AT Datasheet
US1G-M3/5AT
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US1G-TP
Micro Commercial CoIn Stock: 19143US1G-TP Datasheet
US1G-TP
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US1GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 59196US1GHE3_A/H Datasheet
US1GHE3_A/H
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US1GHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 26827US1GHE3_A/I Datasheet
US1GHE3_A/I
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US2GA-TP
Micro Commercial CoIn Stock: 2323US2GA-TP Datasheet
US2GA-TP
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ES1G
Good-Ark SemiconductorIn Stock: 415377ES1G Datasheet
ES1G
Parametric Equivalent
RS1G
Taiwan Semiconductor CorporationIn Stock: 25431RS1G Datasheet
RS1G
Parametric Equivalent
RS1G-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 20115RS1G-E3/5AT Datasheet
RS1G-E3/5AT
Parametric Equivalent
RS1G-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 24212RS1G-E3/61T Datasheet
RS1G-E3/61T
Parametric Equivalent
RS1G-HF
Comchip TechnologyIn Stock: 716RS1G-HF Datasheet
RS1G-HF
Parametric Equivalent
RS1G-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 839RS1G-M3/5AT Datasheet
RS1G-M3/5AT
Parametric Equivalent
RS1G-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 890RS1G-M3/61T Datasheet
RS1G-M3/61T
Parametric Equivalent
RS1G_R1_00001
Panjit International Inc.In Stock: 4964RS1G_R1_00001 Datasheet
RS1G_R1_00001
Parametric Equivalent
RS1GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 8993RS1GHE3_A/H Datasheet
RS1GHE3_A/H
Parametric Equivalent
RS1GHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 5816RS1GHE3_A/I Datasheet
RS1GHE3_A/I
Parametric Equivalent
US1G_R1_00001
Panjit International Inc.In Stock: 505747US1G_R1_00001 Datasheet
US1G_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 400 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 1 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 400 V
Package / Case DO-214AC, SMA
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the ES1LG is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC, SMA
  • Mounting Type: Surface Mount
  • Voltage - Forward (Vf) (Max) @ If: ≤ 1.3 V @ 1 A
  • Current - Reverse Leakage @ Vr: ≤ 5 µA @ 400 V
  • Operating Temperature - Junction: -55°C to 150°C minimum

Acceptable Variation Parameters:

  • Reverse Recovery Time (trr): Values ≤ 150 ns are acceptable for fast recovery applications; values up to 500 ns remain within fast recovery classification
  • Capacitance @ Vr, F: Variation permitted within specified measurement conditions
  • Packaging format (Cut Tape, Tape & Reel, Bag): Interchangeable for component selection

Substitute parts are grouped into three categories: parametric equivalents (matching all critical specifications), direct manufacturer equivalents (alternative part numbers from the same or equivalent manufacturers), and similar parts (meeting core electrical requirements with minor parameter variations).

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V @ A] trr [ns] Ir @ Vr [µA @ V] Package Product Status
ES1LG Taiwan Semiconductor Corporation 400 1 1.3 @ 1 35 5 @ 400 DO-214AC, SMA Obsolete
ES1G Good-Ark Semiconductor 400 1 1.3 @ 1 35 5 @ 400 DO-214AC, SMA Active
ES1GH Taiwan Semiconductor Corporation 400 1 1.3 @ 1 35 5 @ 400 DO-214AC, SMA Active
HS1G SURGE 400 1 1.3 @ 1 50 5 @ 400 DO-214AC, SMA Active
RS1G Taiwan Semiconductor Corporation 400 1 1.3 @ 1 150 5 @ 400 DO-214AC, SMA Active
RS1G R3G Taiwan Semiconductor Corporation 400 1 1.3 @ 1 150 5 @ 400 DO-214AC, SMA Discontinued at DiGi Electronics
RS1GH Taiwan Semiconductor Corporation 400 1 1.3 @ 1 150 5 @ 400 DO-214AC, SMA Active
CSFA104-G Comchip Technology 400 1 1.25 @ 1 35 5 @ 400 DO-214AC, SMA Active
CGRA4004-G Comchip Technology 400 1 1.1 @ 1 Not specified 5 @ 400 DO-214AC, SMA Active
ES1G-13-F Diodes Incorporated 400 1 1.25 @ 1 25 5 @ 400 DO-214AC, SMA Active

Engineering Selection Recommendations

Parametric Equivalents (Recommended Primary Substitutes):

ES1G (Good-Ark Semiconductor) and ES1GH (Taiwan Semiconductor Corporation) provide direct parametric equivalence to the ES1LG across all critical electrical specifications. ES1GH carries automotive-grade qualification (AEC-Q101) and is available in active product status with Tape & Reel packaging. ES1G is available in Cut Tape & Digi-Reel format with high inventory availability (415,300 units). Both parts maintain identical voltage, current, forward voltage, and reverse recovery time specifications.

Fast Recovery Equivalents:

CSFA104-G (Comchip Technology) and ES1G-13-F (Diodes Incorporated) meet fast recovery specifications with reverse recovery times of 35 ns and 25 ns respectively. CSFA104-G exhibits forward voltage of 1.25 V, while ES1G-13-F operates at 1.25 V with superior reverse recovery performance (25 ns). Both are in active product status.

Extended Recovery Time Alternatives:

RS1G, RS1G R3G, and RS1GH (Taiwan Semiconductor Corporation) provide functional equivalence with extended reverse recovery times of 150 ns, remaining within fast recovery classification (≤ 500 ns). RS1GH carries automotive qualification (AEC-Q101) and is available in active status. These parts are suitable for applications where extended recovery time does not impact circuit performance.

Standard Recovery Alternative:

CGRA4004-G (Comchip Technology) operates with standard recovery characteristics (>500 ns) and exhibits the lowest forward voltage specification (1.1 V @ 1 A). This part is suitable only for applications where fast recovery is not a design requirement.

Compliance and Availability:

All substitute parts maintain ROHS3 compliance, MSL Level 1 (Unlimited), and EAR99 export classification. Parts in active product status are preferred for new designs and ongoing production. Taiwan Semiconductor Corporation parts (ES1GH, RS1GH) provide continuity with the original manufacturer ecosystem.

Frequently Asked Questions (FAQ)

Q: Can ES1G be used as a direct replacement for ES1LG?

A: Yes. ES1G meets all mandatory electrical parameters: 400 V reverse voltage, 1 A average rectified current, 1.3 V forward voltage at 1 A, 35 ns reverse recovery time, and identical package specification (DO-214AC, SMA). The primary difference is manufacturer (Good-Ark Semiconductor versus Taiwan Semiconductor Corporation) and product status (Active versus Obsolete). Inventory availability for ES1G is significantly higher (415,300 units).

Q: What is the difference between ES1GH and RS1GH?

A: Both parts are manufactured by Taiwan Semiconductor Corporation and carry AEC-Q101 automotive qualification. The primary difference is reverse recovery time: ES1GH operates at 35 ns (fast recovery), while RS1GH operates at 150 ns (extended recovery, still within fast recovery classification). ES1GH is preferred for applications requiring faster switching performance. Both are available in Tape & Reel packaging and active product status.

Q: Is CGRA4004-G suitable for the ES1LG application?

A: CGRA4004-G meets voltage and current specifications but operates with standard recovery characteristics (>500 ns) rather than fast recovery (≤ 500 ns). This part is suitable only if the original application does not require fast recovery performance. Forward voltage is lower (1.1 V), which may provide thermal benefits in some circuits but does not constitute a performance advantage for rectification.

Q: What packaging options are available for substitutes?

A: Substitute parts are available in three packaging formats: Cut Tape (CT) & Digi-Reel, Tape & Reel (TR), and Bag. All formats contain identical components in DO-214AC (SMA) surface mount package. Selection depends on production volume and assembly process requirements. Cut Tape and Digi-Reel formats are suitable for lower-volume production; Tape & Reel is standard for high-volume automated assembly.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain ROHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity rating, matching the original ES1LG specification.

Q: Which substitute offers the fastest reverse recovery time?

A: ES1G-13-F (Diodes Incorporated) provides the fastest reverse recovery time at 25 ns, compared to 35 ns for ES1LG. This part is suitable for applications requiring maximum switching speed. It is available in active product status with high inventory (420,300 units).

Q: Can I use RS1G instead of ES1LG in a high-speed switching application?

A: RS1G operates with 150 ns reverse recovery time, which is significantly longer than ES1LG (35 ns). While both are classified as fast recovery (≤ 500 ns), the extended recovery time of RS1G may impact switching frequency performance. Use RS1G only if circuit analysis confirms that 150 ns recovery time is acceptable for the intended application frequency.

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