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ES1LDH Equivalent & Substitute Parts
Part Overview
The ES1LDH is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This part is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. The ES1LDH meets automotive-grade specifications with AEC-Q101 qualification and is RoHS3 compliant.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Current - Average Rectified (Io) | 1 A |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
| Package / Case | DO-214AC, SMA |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Surface Mount |
| RoHS Status | RoHS3 Compliant |
| Grade | Automotive |
| Qualification | AEC-Q101 |
Substitute Part Grouping Explanation
Substitution of the ES1LDH is determined by strict equivalence in the following electrical and mechanical parameters:
Critical Parameters for Substitution:
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1 A
- Package / Case: DO-214AC, SMA (surface mount)
- Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Operating Temperature Range: -55°C minimum to 150°C maximum
- Mounting Type: Surface Mount
Parametric Equivalents are parts that match all critical electrical parameters and package specifications. These parts are direct functional replacements with identical performance characteristics.
Similar Parts are components that meet the core voltage and current ratings and package type but may differ in secondary parameters such as forward voltage, reverse recovery time, or temperature range. These parts are suitable for applications where the specific performance variation does not impact circuit operation.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Vr (Max) | Io | Vf (Max) @ If | trr | Package | Temp Range | Product Status |
|---|---|---|---|---|---|---|---|---|
| ES1LDH | Taiwan Semiconductor Corporation | 200 V | 1 A | 950 mV @ 1 A | 35 ns | DO-214AC (SMA) | -55°C ~ 150°C | Obsolete |
| ES1D | EVVO Semi | 200 V | 1 A | 1 V @ 1 A | 35 ns | DO-214AC (SMA) | -55°C ~ 150°C | Active |
| ES1D R3G | Taiwan Semiconductor Corporation | 200 V | 1 A | 950 mV @ 1 A | 35 ns | DO-214AC (SMA) | -55°C ~ 150°C | Discontinued at DiGi Electronics |
| ES1DH | Taiwan Semiconductor Corporation | 200 V | 1 A | 950 mV @ 1 A | 35 ns | DO-214AC (SMA) | -55°C ~ 150°C | Active |
| CGRA4003-G | Comchip Technology | 200 V | 1 A | 1.1 V @ 1 A | Not specified | DO-214AC (SMA) | -55°C ~ 150°C | Active |
| ES1D-13-F | Diodes Incorporated | 200 V | 1 A | 920 mV @ 1 A | 25 ns | DO-214AC (SMA) | -55°C ~ 150°C | Active |
| ES1D-LTP | Micro Commercial Co | 200 V | 1 A | 950 mV @ 1 A | 35 ns | DO-214AC (SMA) | -65°C ~ 175°C | Active |
| ES2D-LTP | Micro Commercial Co | 200 V | 2 A | 950 mV @ 2 A | 35 ns | DO-214AC (SMA) | -65°C ~ 175°C | Active |
| RS1D-13-F | Diodes Incorporated | 200 V | 1 A | 1.3 V @ 1 A | 150 ns | DO-214AC (SMA) | -65°C ~ 150°C | Active |
| RS1DB-13-F | Diodes Incorporated | 200 V | 1 A | 1.3 V @ 1 A | 150 ns | DO-214AA (SMB) | -65°C ~ 150°C | Active |
| S1D-13-F | Diodes Incorporated | 200 V | 1 A | 1.1 V @ 1 A | 3 µs | DO-214AC (SMA) | -65°C ~ 150°C | Active |
Engineering Selection Recommendations
Parametric Equivalents (Direct Replacements):
The ES1DH manufactured by Taiwan Semiconductor Corporation is the primary parametric equivalent to the ES1LDH. Both parts share identical electrical specifications (200 V, 1 A, 950 mV forward voltage, 35 ns reverse recovery time) and package configuration (DO-214AC SMA). The ES1DH is currently active in production and maintains the same automotive-grade AEC-Q101 qualification. This part is the recommended first choice for direct substitution.
The ES1D manufactured by EVVO Semi provides parametric equivalence with matching voltage, current, and recovery time specifications. The forward voltage specification is 1 V at 1 A, representing a 50 mV increase from the ES1LDH. This part is active and widely available.
The ES1D R3G from Taiwan Semiconductor Corporation is discontinued at DiGi Electronics but matches all electrical parameters of the ES1LDH. This part should be considered only when ES1DH availability is constrained.
Similar Parts (Functional Alternatives):
The ES1D-13-F from Diodes Incorporated meets the 200 V, 1 A core specifications with a lower forward voltage (920 mV) and faster reverse recovery time (25 ns). This part is suitable for applications where improved switching performance is beneficial.
The ES1D-LTP from Micro Commercial Co provides identical electrical performance to the ES1LDH with an extended operating temperature range (-65°C to 175°C). This part is appropriate for applications requiring enhanced thermal performance.
The CGRA4003-G from Comchip Technology meets voltage and current specifications with a slightly elevated forward voltage (1.1 V). This part is active and available in volume quantities.
The RS1D-13-F from Diodes Incorporated meets voltage and current specifications but exhibits higher forward voltage (1.3 V) and significantly longer reverse recovery time (150 ns). This part is classified as standard recovery rather than fast recovery and is suitable only for applications where switching speed is not critical.
The RS1DB-13-F from Diodes Incorporated uses the SMB package (DO-214AA) rather than the SMA package (DO-214AC) of the ES1LDH. This part requires PCB layout modification and is not recommended as a direct substitute without design review.
The S1D-13-F from Diodes Incorporated is classified as standard recovery (3 µs reverse recovery time) rather than fast recovery. This part is suitable only for low-frequency rectification applications where switching speed is not a design constraint.
Current Rating Consideration:
The ES2D-LTP from Micro Commercial Co is rated for 2 A average rectified current, exceeding the 1 A specification of the ES1LDH. This part is suitable for applications requiring higher current capacity but should not be used as a direct substitute in circuits designed for 1 A operation without thermal analysis.
Frequently Asked Questions (FAQ)
Q: Can the ES1DH be used as a direct replacement for the ES1LDH?
A: Yes. The ES1DH is a parametric equivalent with identical voltage (200 V), current (1 A), forward voltage (950 mV @ 1 A), reverse recovery time (35 ns), and package specifications (DO-214AC SMA). Both parts maintain automotive-grade AEC-Q101 qualification. The ES1DH is currently in active production.
Q: What is the difference between the ES1D and ES1D-13-F?
A: Both parts meet the 200 V, 1 A specifications and use the DO-214AC SMA package. The ES1D is manufactured by EVVO Semi with a forward voltage of 1 V at 1 A. The ES1D-13-F is manufactured by Diodes Incorporated with a lower forward voltage of 920 mV at 1 A and faster reverse recovery time of 25 ns. The ES1D-13-F offers improved switching performance.
Q: Why is the RS1DB-13-F not recommended as a substitute?
A: The RS1DB-13-F uses the SMB package (DO-214AA) instead of the SMA package (DO-214AC) specified for the ES1LDH. This package difference requires PCB layout modification and is not a direct mechanical substitute. Additionally, the RS1DB-13-F exhibits higher forward voltage (1.3 V) and longer reverse recovery time (150 ns).
Q: Can the ES2D-LTP be used in place of the ES1LDH?
A: The ES2D-LTP is rated for 2 A average rectified current, which exceeds the 1 A specification of the ES1LDH. While the part meets voltage and package requirements, using a higher-rated component in a 1 A circuit does not provide functional benefit and may introduce unnecessary cost. The ES2D-LTP is appropriate only when higher current capacity is required by the application.
Q: What is the significance of fast recovery versus standard recovery classification?
A: Fast recovery diodes (≤ 500 ns reverse recovery time) are designed for high-frequency switching applications. Standard recovery diodes (> 500 ns reverse recovery time) are suitable for low-frequency rectification. The ES1LDH is classified as fast recovery with 35 ns reverse recovery time. The S1D-13-F is standard recovery with 3 µs reverse recovery time and should not be used in applications requiring fast switching performance.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed in this reference are RoHS3 compliant and meet REACH requirements. All parts carry EAR99 export classification and HTSUS code 8541.10.0080.
Q: What is the operating temperature range difference between ES1D-LTP and ES1LDH?
A: The ES1LDH operates from -55°C to 150°C junction temperature. The ES1D-LTP operates from -65°C to 175°C, providing a 10°C lower minimum and 25°C higher maximum operating temperature. The extended range of the ES1D-LTP is beneficial for applications in extreme thermal environments.
Q: Can the CGRA4003-G be used as a direct substitute?
A: The CGRA4003-G meets the 200 V, 1 A core specifications and uses the DO-214AC SMA package. The forward voltage is specified at 1.1 V at 1 A, which is 150 mV higher than the ES1LDH specification of 950 mV. This difference is within typical design margins for general-purpose rectification but should be verified in applications with tight voltage drop constraints.
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