ES1JLW RVG Equivalent & Substitute Parts

Part Overview

The ES1JLW RVG is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 1 A average rectified current in a surface mount SOD-123W package. This component is classified as Active product status and complies with RoHS3 and REACH regulations. Substitute parts are identified based on matching electrical specifications, package compatibility, and thermal operating range to ensure direct functional equivalence in circuit applications.

Substiute Parts

ES1JLW RVG
Taiwan Semiconductor CorporationIn Stock: 1071ES1JLW RVG Datasheet
ES1JLW RVG
Current Part
ES1JLW
Taiwan Semiconductor CorporationIn Stock: 62430ES1JLW Datasheet
ES1JLW
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.7 @ 1 A V
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 5 @ 600 V µA
Capacitance @ Vr, F 20 @ 4V, 1MHz pF
Package / Case SOD-123W
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 175 °C
Technology Standard
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)

Substitute Part Grouping Explanation

Substitute parts for the ES1JLW RVG are identified through parametric equivalence. The substitution logic is based on the following critical parameters that must match or exceed the main part specifications:

  • Reverse Voltage Rating: 600 V DC minimum
  • Average Rectified Current: 1 A minimum
  • Forward Voltage Drop: 1.7 V maximum at 1 A
  • Reverse Recovery Time: 35 ns maximum
  • Reverse Leakage Current: 5 µA maximum at 600 V
  • Junction Capacitance: 20 pF maximum at 4 V, 1 MHz
  • Package Type: SOD-123W surface mount
  • Operating Temperature Range: -55°C to 175°C minimum
  • Compliance: RoHS3 and REACH status alignment

Parts meeting all these criteria are classified as direct parametric equivalents and may be substituted without circuit redesign.

Parameter Comparison

Parameter ES1JLW RVG (Main Part) ES1JLW (Substitute) Match Status
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Identical
Category Diodes, Rectifiers Diodes, Rectifiers Identical
Voltage - DC Reverse (Vr) (Max) 600 V 600 V Identical
Current - Average Rectified (Io) 1 A 1 A Identical
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A 1.7 V @ 1 A Identical
Reverse Recovery Time (trr) 35 ns 35 ns Identical
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V Identical
Capacitance @ Vr, F 20 pF @ 4V, 1MHz 20 pF @ 4V, 1MHz Identical
Package / Case SOD-123W SOD-123W Identical
Mounting Type Surface Mount Surface Mount Identical
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C Identical
Technology Standard Standard Identical
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Identical
Product Status Active Active Identical
RoHS Status ROHS3 Compliant ROHS3 Compliant Identical
REACH Status REACH Unaffected REACH Unaffected Identical

Engineering Selection Recommendations

The ES1JLW substitute part is a direct parametric equivalent to the ES1JLW RVG main part. Both components are manufactured by Taiwan Semiconductor Corporation and share identical electrical specifications, package configuration, and compliance certifications.

Selection Basis:

  • Both parts maintain Active product status, ensuring continued manufacturing support and supply chain availability.
  • Electrical parameters are identical across all critical specifications: reverse voltage, forward voltage, current ratings, recovery time, leakage current, and capacitance.
  • Package and mounting type are identical (SOD-123W surface mount), permitting direct PCB layout compatibility without modification.
  • Operating temperature range is identical (-55°C to 175°C), ensuring equivalent thermal performance in target applications.
  • Both parts comply with RoHS3 and REACH regulations, maintaining regulatory alignment for end-use applications.

The ES1JLW part is suitable for direct substitution in applications where the ES1JLW RVG is specified, with no circuit redesign or validation required.

Frequently Asked Questions (FAQ)

Q: Can the ES1JLW be used as a direct replacement for the ES1JLW RVG?

A: Yes. The ES1JLW meets all parametric requirements for direct substitution. Electrical specifications, package type, mounting configuration, and compliance certifications are identical between the two parts.

Q: Are there any differences in the SOD-123W package between these parts?

A: No. Both parts use the SOD-123W surface mount package with identical mechanical and electrical interface specifications. PCB footprints and reflow soldering profiles are compatible.

Q: Do both parts have the same operating temperature range?

A: Yes. Both the ES1JLW RVG and ES1JLW operate across the junction temperature range of -55°C to 175°C, providing equivalent thermal performance in circuit applications.

Q: What are the key electrical parameters that determine substitution eligibility?

A: Substitution eligibility is determined by matching: reverse voltage rating (600 V), average rectified current (1 A), forward voltage drop (1.7 V @ 1 A), reverse recovery time (35 ns), reverse leakage current (5 µA @ 600 V), and junction capacitance (20 pF @ 4V, 1MHz).

Q: Are both parts RoHS3 and REACH compliant?

A: Yes. Both the ES1JLW RVG and ES1JLW are ROHS3 Compliant and REACH Unaffected, meeting regulatory requirements for restricted substance use and chemical safety.

Q: What is the difference between ES1JLW RVG and ES1JLW part numbers?

A: The ES1JLW RVG and ES1JLW are parametrically equivalent parts from Taiwan Semiconductor Corporation. The designation difference reflects packaging or supplier configuration variants, but electrical and mechanical specifications are identical.

Q: Can these parts be used in high-frequency switching applications?

A: Both parts are classified as Fast Recovery diodes with a reverse recovery time of 35 ns, suitable for applications requiring switching speeds up to 500 ns with currents exceeding 200 mA.

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