ES1JL MHG Equivalent & Substitute Parts

Part Overview

The ES1JL MHG is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 1 A average rectified current. This Surface Mount Sub SMA device features fast recovery characteristics with a reverse recovery time of 35 ns and is housed in a DO-219AB package. The part is currently Active in product status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified to provide design flexibility, accommodate supply chain variations, and support applications requiring alternative sourcing options while maintaining electrical and mechanical compatibility within specified parameters.

Substiute Parts

ES1JL MHG
Taiwan Semiconductor CorporationIn Stock: 992ES1JL MHG Datasheet
ES1JL MHG
Current Part
ES1JL
Taiwan Semiconductor CorporationIn Stock: 84529ES1JL Datasheet
ES1JL
Parametric Equivalent
HS1JL RVG
Taiwan Semiconductor CorporationIn Stock: 1088HS1JL RVG Datasheet
HS1JL RVG
Parametric Equivalent
VS-1EFU06HM3/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 36349VS-1EFU06HM3/I Datasheet
VS-1EFU06HM3/I
Similar
VS-2EFU06HM3/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 10260VS-2EFU06HM3/I Datasheet
VS-2EFU06HM3/I
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.7 @ 1 A V
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 5 @ 600 V µA
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Package / Case DO-219AB
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the ES1JL MHG are classified into two categories based on electrical parameter alignment:

Parametric Equivalents maintain identical or functionally equivalent electrical specifications across all critical parameters: 600 V reverse voltage rating, 1 A average rectified current, fast recovery speed classification, and DO-219AB package format. These parts satisfy direct replacement requirements in applications where the original specification must be preserved.

Similar Parts share the same voltage and package specifications but differ in one or more electrical parameters. These parts are suitable for applications where the design permits parameter variation within acceptable tolerances.

The following parameters determine substitution eligibility:

  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1 A or higher
  • Package / Case: DO-219AB
  • Mounting Type: Surface Mount
  • Speed Classification: Fast Recovery

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [ns] Ir @ Vr [µA] Package Product Status
ES1JL MHG Taiwan Semiconductor Corporation 600 1 1.7 @ 1 A 35 5 @ 600 V DO-219AB Active
ES1JL Taiwan Semiconductor Corporation 600 1 1.7 @ 1 A 35 5 @ 600 V DO-219AB Not For New Designs
HS1JL RVG Taiwan Semiconductor Corporation 600 1 1.7 @ 1 A 75 5 @ 600 V DO-219AB Active
VS-1EFU06HM3/I Vishay General Semiconductor - Diodes Division 600 1 1.2 @ 1 A 32 3 @ 600 V DO-219AB Active
VS-2EFU06HM3/I Vishay General Semiconductor - Diodes Division 600 2 1.35 @ 2 A 55 3 @ 600 V DO-219AB Active

Engineering Selection Recommendations

ES1JL (Taiwan Semiconductor Corporation) is a parametric equivalent offering identical electrical specifications to the ES1JL MHG. However, this part carries a "Not For New Designs" product status designation. Selection of this part is limited to legacy system support, maintenance applications, or situations where existing inventory must be utilized. New design implementations should prioritize Active status alternatives.

HS1JL RVG (Taiwan Semiconductor Corporation) is an Active parametric equivalent with identical voltage, current, and package specifications. The reverse recovery time of 75 ns exceeds the ES1JL MHG specification of 35 ns. This part is suitable for applications where extended reverse recovery time does not compromise circuit performance or where slower recovery characteristics are acceptable.

VS-1EFU06HM3/I (Vishay General Semiconductor - Diodes Division) is an Active similar part rated for 600 V and 1 A with DO-219AB packaging. This part features lower forward voltage (1.2 V versus 1.7 V) and lower reverse leakage current (3 µA versus 5 µA). The reverse recovery time of 32 ns is faster than the ES1JL MHG. This part includes AEC-Q101 automotive qualification and operates to 175°C junction temperature. Selection is appropriate for applications benefiting from improved thermal performance and reduced power dissipation.

VS-2EFU06HM3/I (Vishay General Semiconductor - Diodes Division) is an Active similar part with 600 V rating and DO-219AB packaging. The 2 A current rating exceeds the 1 A specification of the ES1JL MHG. This part is suitable for applications requiring higher current capacity or where design margin for current handling is required. AEC-Q101 automotive qualification and 175°C junction temperature operation are provided.

All substitute parts maintain ROHS3 compliance, MSL 1 (Unlimited) moisture sensitivity level, and EAR99 export classification consistent with the main part.

Frequently Asked Questions (FAQ)

Q: Can ES1JL be used as a direct replacement for ES1JL MHG?

A: ES1JL shares identical electrical parameters with ES1JL MHG and is mechanically compatible in the DO-219AB package. However, ES1JL carries "Not For New Designs" product status. Direct replacement is limited to legacy applications or maintenance scenarios. For new designs, Active status alternatives such as HS1JL RVG or VS-1EFU06HM3/I are recommended.

Q: What is the difference between HS1JL RVG and ES1JL MHG?

A: Both parts are rated for 600 V, 1 A, and use the DO-219AB package. The primary difference is reverse recovery time: HS1JL RVG specifies 75 ns compared to 35 ns for ES1JL MHG. HS1JL RVG is Active status. Selection depends on whether the application circuit can tolerate the longer recovery time without performance degradation.

Q: Why would I select VS-1EFU06HM3/I over ES1JL MHG?

A: VS-1EFU06HM3/I offers several advantages: lower forward voltage drop (1.2 V versus 1.7 V), lower reverse leakage current (3 µA versus 5 µA), faster reverse recovery time (32 ns versus 35 ns), and extended junction temperature rating to 175°C. These characteristics reduce power dissipation and improve thermal performance. AEC-Q101 automotive qualification is included. Selection is appropriate for applications where these performance improvements provide design benefit.

Q: When should VS-2EFU06HM3/I be selected?

A: VS-2EFU06HM3/I is rated for 2 A average rectified current, double the 1 A rating of ES1JL MHG. This part is selected when the application requires higher current capacity, when design margin for current handling is necessary, or when a single part can serve multiple current-rated applications. The 600 V voltage rating and DO-219AB package remain compatible with ES1JL MHG footprints.

Q: Are all substitute parts RoHS compliant?

A: Yes. All listed substitute parts maintain ROHS3 compliance consistent with ES1JL MHG. All parts are REACH Unaffected and carry EAR99 export classification.

Q: What is the moisture sensitivity level for these parts?

A: All parts, including ES1JL MHG and all substitutes, are rated MSL 1 (Unlimited). This classification indicates unlimited shelf life under normal storage conditions without moisture bake requirements prior to soldering.

Q: Can these parts be used interchangeably in existing PCB designs?

A: All substitute parts use the DO-219AB package and Surface Mount mounting type, providing mechanical compatibility with ES1JL MHG PCB footprints. Electrical interchangeability depends on circuit design tolerances for forward voltage, reverse leakage current, and reverse recovery time. Circuit simulation or testing is necessary to confirm functional equivalence in specific applications.

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