ES1JF R3G Equivalent & Substitute Parts

Part Overview

The ES1JF R3G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 1 A average rectified current in a surface mount SMA-FL package. This component is classified as obsolete, indicating that direct procurement from the original manufacturer may be limited or unavailable. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production requirements for applications utilizing this rectifier diode specification.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	600	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.7 @ 1 A	V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	5	µA @ 600 V
Capacitance @ Vr, F	9	pF @ 4V, 1MHz
Package / Case	DO-221AC, SMA Flat Leads	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the ES1JF R3G are classified based on electrical parameter equivalence and mechanical compatibility. The primary substitution criteria are:

Critical Parameters for Substitution:

Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1 A
Package / Case: DO-221AC, SMA Flat Leads
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns (primary specification)
Operating Temperature Range: -55°C to 150°C minimum

Parametric Equivalent Parts maintain all critical electrical specifications and are direct functional replacements. These parts share identical voltage, current, and thermal ratings with minor variations in secondary parameters such as reverse leakage current or junction capacitance that do not affect circuit performance within the specified operating envelope.

Similar Parts meet the primary voltage and current requirements but may differ in recovery time characteristics or current ratings. The SE30AFJHM3/6A, for example, operates at 1.4 A (higher current capability) and exhibits standard recovery characteristics (>500ns) rather than fast recovery, making it suitable for applications where the higher current rating provides design margin but recovery time is not performance-critical.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	trr [ns]	Ir @ Vr [µA]	C @ Vr [pF]	Package	Temp Range [°C]	Product Status
ES1JF R3G	Taiwan Semiconductor Corporation	600	1	1.7 @ 1 A	35	5 @ 600 V	9 @ 4V, 1MHz	DO-221AC, SMA-FL	-55 to 150	Obsolete
ES1JAL	Taiwan Semiconductor Corporation	600	1	1.7 @ 1 A	35	1 @ 600 V	15 @ 4V, 1MHz	DO-221AC, SMA Flat Leads	-55 to 150	Active
ES1JF R2G	Taiwan Semiconductor Corporation	600	1	1.7 @ 1 A	35	5 @ 600 V	9 @ 4V, 1MHz	DO-221AC, SMA Flat Leads	-55 to 150	Active
HS1JAL	Taiwan Semiconductor Corporation	600	1	1.7 @ 1 A	75	1 @ 600 V	13 @ 4V, 1MHz	DO-221AC, SMA Flat Leads	-55 to 150	Active
SE30AFJHM3/6A	Vishay General Semiconductor - Diodes Division	600	1.4	1.1 @ 3 A	1500	10 @ 600 V	19 @ 4V, 1MHz	DO-221AC, SMA Flat Leads	-55 to 175	Active
ER1J_R1_00001	Panjit International Inc.	600	1	1.7 @ 1 A	35	1 @ 600 V	15 @ 4V, 1MHz	DO-221AC, SMA Flat Leads	-55 to 150	Active
ER1JAFC_R1_00001	Panjit International Inc.	600	1	1.7 @ 1 A	35	1 @ 600 V	15 @ 4V, 1MHz	DO-221AC, SMA Flat Leads	-55 to 150	Active
ES1JF	MDD	600	1	1.7 @ 1 A	35	5 @ 600 V	15 @ 4V, 1MHz	DO-221AC, SMA Flat Leads	-55 to 150	Active
US1JAFC_R1_00001	Panjit International Inc.	600	1	1.7 @ 1 A	100	1 @ 600 V	10 @ 4V, 1MHz	DO-221AC, SMA Flat Leads	-55 to 150	Active

Engineering Selection Recommendations

Parametric Equivalent Selection (Direct Replacement):

The following parts are recommended as direct replacements for the ES1JF R3G based on matching electrical specifications and active product status:

ES1JF R2G (Taiwan Semiconductor Corporation): Identical electrical parameters to the main part with active product status. Maintains 600 V reverse voltage, 1 A current rating, 35 ns recovery time, and -55°C to 150°C operating range. ROHS3 compliant.
ES1JAL (Taiwan Semiconductor Corporation): Meets all critical electrical specifications with improved reverse leakage current (1 µA vs. 5 µA). Active product status with ROHS3 compliance. Thin SMA package variant.
ER1J_R1_00001 (Panjit International Inc.): Parametric equivalent with 600 V, 1 A, 35 ns recovery time. Active status, ROHS3 compliant. SMAF-C package configuration.
ER1JAFC_R1_00001 (Panjit International Inc.): Identical specifications to ER1J_R1_00001. Active status, ROHS3 compliant.
ES1JF (MDD): Matches primary electrical specifications with active product status. ROHS compliant. SMAF package variant with high inventory availability (45,300 pcs).

Alternative Selection (Modified Specifications):

HS1JAL (Taiwan Semiconductor Corporation): Suitable where recovery time tolerance permits. Reverse recovery time of 75 ns (vs. 35 ns) represents a 2.1× increase. Improved reverse leakage (1 µA). Active status, ROHS3 compliant. Appropriate for applications where switching speed is not performance-limiting.
US1JAFC_R1_00001 (Panjit International Inc.): Acceptable where recovery time tolerance permits. Reverse recovery time of 100 ns (vs. 35 ns) represents a 2.9× increase. Improved reverse leakage (1 µA). Active status, ROHS3 compliant.

Similar Part Selection (Higher Current Rating):

SE30AFJHM3/6A (Vishay General Semiconductor - Diodes Division): Suitable for applications requiring higher current capacity (1.4 A vs. 1 A). Standard recovery characteristics (1500 ns) indicate this part is not suitable for fast-switching applications. Extended operating temperature range (-55°C to 175°C). AEC-Q101 automotive qualified. ROHS3 compliant. Use only where circuit design accommodates slower recovery time and higher current rating provides necessary design margin.

All recommended substitutes maintain DO-221AC (SMA Flat Leads) package compatibility, ROHS3 compliance, and MSL 1 (unlimited) moisture sensitivity rating.

Frequently Asked Questions (FAQ)

Q: Can ES1JAL be used as a direct replacement for ES1JF R3G?

A: Yes. ES1JAL meets all critical electrical specifications: 600 V reverse voltage, 1 A average rectified current, 1.7 V forward voltage at 1 A, and 35 ns reverse recovery time. The part is active and ROHS3 compliant. The primary difference is improved reverse leakage current (1 µA vs. 5 µA), which represents a performance improvement. Package compatibility is maintained (DO-221AC, SMA Flat Leads).

Q: What is the difference between ES1JF R2G and ES1JF R3G?

A: Both parts share identical electrical specifications: 600 V, 1 A, 1.7 V forward voltage, and 35 ns recovery time. ES1JF R2G is active, while ES1JF R3G is obsolete. ES1JF R2G is the recommended replacement for the obsolete R3G variant.

Q: Can HS1JAL be substituted for ES1JF R3G?

A: HS1JAL is suitable only if the application circuit tolerates a 2.1× increase in reverse recovery time (75 ns vs. 35 ns). All other electrical parameters match: 600 V, 1 A, 1.7 V forward voltage. The part is active and ROHS3 compliant. Use only where switching speed is not performance-critical.

Q: Is SE30AFJHM3/6A compatible with ES1JF R3G?

A: SE30AFJHM3/6A is compatible only if the circuit design accommodates a higher current rating (1.4 A vs. 1 A) and significantly slower recovery time (1500 ns vs. 35 ns). This part is suitable for applications where fast switching is not required and the higher current capacity provides design margin. The part is AEC-Q101 automotive qualified and ROHS3 compliant.

Q: What does "Fast Recovery ≤ 500ns, > 200mA (Io)" mean?

A: This specification indicates that the diode exhibits fast recovery characteristics with reverse recovery time not exceeding 500 ns when the reverse current exceeds 200 mA. The ES1JF R3G achieves 35 ns recovery time, well within this classification. Parts with recovery times exceeding 500 ns (such as SE30AFJHM3/6A at 1500 ns) are classified as standard recovery and are not suitable for high-frequency switching applications.

Q: Are all substitute parts ROHS3 compliant?

A: All recommended substitute parts are ROHS3 compliant except ES1JF (MDD), which is listed as ROHS compliant. All parts maintain MSL 1 (unlimited) moisture sensitivity rating and are suitable for standard PCB assembly processes.

Q: What is the significance of the package designation "SMA-FL" vs. "Thin SMA"?

A: Both designations refer to variants of the DO-221AC package with SMA Flat Leads. "SMA-FL" and "Thin SMA" are package form factor variants. All parts in this comparison maintain mechanical compatibility with the DO-221AC footprint and are interchangeable from a PCB layout perspective.

Q: Which substitute part has the highest inventory availability?

A: ES1JF (MDD) has the highest inventory availability at 45,300 pieces. HS1JAL (Taiwan Semiconductor Corporation) has 7,069 pieces available. Both parts are active and suitable for immediate procurement.

Q: Can multiple substitute parts be used interchangeably in the same design?

A: Yes, provided the circuit design accommodates the parameter variations. For applications where recovery time is not performance-critical, HS1JAL and US1JAFC_R1_00001 are interchangeable with the primary equivalents. For applications requiring fast recovery characteristics, ES1JF R2G, ES1JAL, ER1J_R1_00001, and ER1JAFC_R1_00001 are directly interchangeable. SE30AFJHM3/6A should be used only in designs specifically validated for its higher current rating and slower recovery time.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message