ES1G-TP Equivalent & Substitute Parts

Part Overview

The ES1G-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 400 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (HSMA) package. This part is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement continuity. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives with comparable or enhanced performance characteristics within the same application category.

Substiute Parts

ES1G-TP
Micro Commercial CoIn Stock: 1104ES1G-TP Datasheet
ES1G-TP
Current Part
ES1G-LTP
Micro Commercial CoIn Stock: 13588ES1G-LTP Datasheet
ES1G-LTP
Direct
MURA140T3G
onsemiIn Stock: 30120MURA140T3G Datasheet
MURA140T3G
Direct
CGRA4004-G
Comchip TechnologyIn Stock: 20203CGRA4004-G Datasheet
CGRA4004-G
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ES1G
Good-Ark SemiconductorIn Stock: 415377ES1G Datasheet
ES1G
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ES1G-13-F
Diodes IncorporatedIn Stock: 420370ES1G-13-F Datasheet
ES1G-13-F
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GF1G
onsemiIn Stock: 6698GF1G Datasheet
GF1G
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GF1G-E3/5CA
Vishay General Semiconductor - Diodes DivisionIn Stock: 15152GF1G-E3/5CA Datasheet
GF1G-E3/5CA
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GF1G-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 5247GF1G-E3/67A Datasheet
GF1G-E3/67A
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MRA4004T3G
onsemiIn Stock: 155426MRA4004T3G Datasheet
MRA4004T3G
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NRVA4004T3G
onsemiIn Stock: 55311NRVA4004T3G Datasheet
NRVA4004T3G
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RGF1G-E3/5CA
Vishay General Semiconductor - Diodes DivisionIn Stock: 15330RGF1G-E3/5CA Datasheet
RGF1G-E3/5CA
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RR2L4SDDTE25
Rohm SemiconductorIn Stock: 2975RR2L4SDDTE25 Datasheet
RR2L4SDDTE25
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RS1G
Taiwan Semiconductor CorporationIn Stock: 25431RS1G Datasheet
RS1G
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RS1G-13-F
Diodes IncorporatedIn Stock: 115102RS1G-13-F Datasheet
RS1G-13-F
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RS1G-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 839RS1G-M3/5AT Datasheet
RS1G-M3/5AT
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RS1G-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 890RS1G-M3/61T Datasheet
RS1G-M3/61T
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S1G-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 757S1G-M3/5AT Datasheet
S1G-M3/5AT
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S1G-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 14760S1G-M3/61T Datasheet
S1G-M3/61T
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S1GT-04LC-F
Diodes IncorporatedIn Stock: 37259S1GT-04LC-F Datasheet
S1GT-04LC-F
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STTH1R04A
STMicroelectronicsIn Stock: 19331STTH1R04A Datasheet
STTH1R04A
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STTH1R04AY
STMicroelectronicsIn Stock: 26262STTH1R04AY Datasheet
STTH1R04AY
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US1G-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 16224US1G-M3/5AT Datasheet
US1G-M3/5AT
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US1G-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 9486US1G-M3/61T Datasheet
US1G-M3/61T
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US1GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 59196US1GHE3_A/H Datasheet
US1GHE3_A/H
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US1GHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 26827US1GHE3_A/I Datasheet
US1GHE3_A/I
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 400 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.35 V @ 1 A V
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 400 V
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Operating Temperature - Junction -50 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the ES1G-TP is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1 A minimum
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC or compatible SMA variant
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level: 1 (Unlimited)

Performance Characteristics:

  • Voltage - Forward (Vf) (Max) @ If: ≤ 1.35 V @ 1 A
  • Speed: Fast Recovery ≤ 500ns or Standard Recovery > 500ns
  • Reverse Recovery Time (trr): ≤ 75 ns (fast recovery) or ≤ 2 µs (standard recovery)
  • Current - Reverse Leakage @ Vr: ≤ 5 µA @ 400 V

Substitute parts are classified into two categories: Direct Equivalents maintain identical electrical specifications and packaging, while Similar Alternatives provide equivalent voltage and current ratings with variations in recovery characteristics, forward voltage, or package configuration that remain functionally compatible within the application envelope.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 1A [V] Speed trr [ns/µs] Package Status
ES1G-TP Micro Commercial Co 400 1 1.35 Fast Recovery ≤ 500ns 75 ns DO-214AC (HSMA) Obsolete
ES1G-LTP Micro Commercial Co 400 1 1.25 Fast Recovery ≤ 500ns 35 ns DO-214AC (SMA) Active
MURA140T3G onsemi 400 2 1.1 Fast Recovery ≤ 500ns 65 ns DO-214AC (SMA) Active
CGRA4004-G Comchip Technology 400 1 1.1 Standard Recovery > 500ns DO-214AC (SMA) Active
ES1G Good-Ark Semiconductor 400 1 1.3 Fast Recovery ≤ 500ns 35 ns DO-214AC (SMA) Active
ES1G-13-F Diodes Incorporated 400 1 1.25 Fast Recovery ≤ 500ns 25 ns DO-214AC (SMA) Active
GF1G onsemi 400 1 1.0 Standard Recovery > 500ns 2 µs DO-214AC (SMA) Not For New Designs
GF1G-E3/5CA Vishay General Semiconductor 400 1 1.1 Standard Recovery > 500ns 2 µs DO-214BA (GF1) Active
GF1G-E3/67A Vishay General Semiconductor 400 1 1.1 Standard Recovery > 500ns 2 µs DO-214BA (GF1) Active
MRA4004T3G onsemi 400 1 1.1 Standard Recovery > 500ns DO-214AC (SMA) Not For New Designs
NRVA4004T3G onsemi 400 1 1.1 Standard Recovery > 500ns DO-214AC (SMA) Not For New Designs

Engineering Selection Recommendations

Direct Equivalent (Recommended Primary Substitute):

ES1G-LTP (Micro Commercial Co) is the direct equivalent replacement for ES1G-TP. Both parts share the same manufacturer base product number (ES1G), identical voltage and current ratings (400 V, 1 A), and compatible DO-214AC SMA packaging. ES1G-LTP is in active production status with superior performance characteristics: lower forward voltage (1.25 V vs. 1.35 V), faster recovery time (35 ns vs. 75 ns), and extended operating temperature range (-65°C to 175°C vs. -50°C to 150°C). Both parts maintain ROHS3 compliance and MSL 1 rating.

Active Production Alternatives (Fast Recovery):

ES1G-13-F (Diodes Incorporated) and ES1G (Good-Ark Semiconductor) provide fast recovery performance with 1 A current rating and 400 V voltage rating. ES1G-13-F offers the fastest recovery time (25 ns) and is in active production. Both maintain full compliance with RoHS3 and MSL 1 specifications.

Active Production Alternatives (Standard Recovery):

CGRA4004-G (Comchip Technology), GF1G-E3/5CA, and GF1G-E3/67A (Vishay General Semiconductor) provide standard recovery characteristics with 1 A current rating and 400 V voltage rating. These parts are in active production status and suitable for applications where recovery speed is not a critical constraint. Vishay parts are designated as SUPERECTIFIER® series.

Higher Current Alternative:

MURA140T3G (onsemi) provides 2 A current rating at 400 V with fast recovery characteristics (65 ns). This part is suitable for applications requiring higher current capacity while maintaining the same voltage specification.

Obsolete Status Parts (Not Recommended for New Designs):

GF1G, MRA4004T3G, and NRVA4004T3G are designated as "Not For New Designs" or obsolete. These parts should not be selected for new circuit designs. NRVA4004T3G carries automotive qualification (AEC-Q101) and may be retained only for existing automotive applications requiring this certification.

Frequently Asked Questions (FAQ)

Q: Can ES1G-LTP directly replace ES1G-TP in existing designs?

A: Yes. ES1G-LTP is the direct equivalent with identical voltage (400 V) and current (1 A) ratings, compatible DO-214AC SMA packaging, and superior performance characteristics. The lower forward voltage and faster recovery time present no compatibility issues and improve circuit performance.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes have reverse recovery times ≤ 500 ns (ES1G-TP: 75 ns), while standard recovery diodes exceed 500 ns (GF1G: 2 µs). Fast recovery diodes are preferred in high-frequency switching applications to minimize switching losses and electromagnetic interference. Standard recovery diodes are suitable for lower-frequency rectification applications.

Q: Can I use MURA140T3G (2 A) instead of ES1G-TP (1 A)?

A: Yes, with circuit verification. MURA140T3G maintains the same 400 V voltage rating and provides double the current capacity (2 A vs. 1 A). The lower forward voltage (1.1 V vs. 1.35 V) and faster recovery time (65 ns vs. 75 ns) are advantageous. Verify that the higher current rating does not introduce unintended circuit behavior in current-limiting applications.

Q: Are there package compatibility issues between DO-214AC (HSMA) and DO-214AC (SMA)?

A: Both designations refer to the same DO-214AC package footprint. HSMA and SMA are supplier-specific package identifiers for the same physical form factor. All listed substitutes with DO-214AC or SMA designation are mechanically and electrically compatible.

Q: Why should I avoid GF1G, MRA4004T3G, and NRVA4004T3G?

A: These parts are designated as "Not For New Designs" or obsolete by their manufacturers. While functionally compatible, they are no longer recommended for new circuit development. Active production alternatives provide superior availability, support, and performance characteristics.

Q: What is the significance of the NRVA4004T3G automotive qualification?

A: NRVA4004T3G carries AEC-Q101 automotive qualification, indicating compliance with automotive industry reliability and testing standards. This part is retained only for existing automotive applications requiring this specific certification. For new automotive designs, select active production alternatives with appropriate automotive qualification.

Q: How do forward voltage differences affect circuit design?

A: Forward voltage (Vf) determines the voltage drop across the diode during conduction. ES1G-TP specifies 1.35 V @ 1 A, while alternatives range from 1.0 V to 1.3 V. Lower forward voltage reduces power dissipation and heat generation. In precision rectification circuits, verify that the selected part's forward voltage remains within the application's tolerance band.

Q: Can I use standard recovery diodes in high-frequency switching applications?

A: Standard recovery diodes (trr > 500 ns) are not recommended for high-frequency switching applications. The extended recovery time increases switching losses, generates electromagnetic interference, and may cause circuit instability. Fast recovery diodes (trr ≤ 500 ns) are required for switching frequencies above approximately 100 kHz.

Q: What does MSL 1 (Unlimited) mean for moisture sensitivity?

A: MSL 1 indicates the lowest moisture sensitivity level. Parts with MSL 1 require no special moisture control during storage, handling, or assembly. Standard warehouse conditions and standard PCB assembly processes are acceptable without additional precautions.

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