ES1GLWHRVG Equivalent & Substitute Parts

Part Overview

The ES1GLWHRVG is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 400 V DC reverse voltage and 1 A average rectified current in a surface mount SOD-123W package. This component is classified as Active and compliant with ROHS3 and REACH standards. The part is suitable for applications requiring fast recovery rectification with a reverse recovery time of 35 nanoseconds.

Alternative models become necessary when inventory constraints exist, when specific performance characteristics are required for application optimization, or when design flexibility permits selection from equivalent device families within the same electrical and mechanical specifications.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	400	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.3 @ 1 A	V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	5	µA @ 400 V
Capacitance @ Vr, F	20	pF @ 4V, 1MHz
Package / Case	SOD-123W	—
Operating Temperature - Junction	-55 to 175	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution eligibility for the ES1GLWHRVG is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Parameters:

Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Operating Temperature - Junction: -55°C to 175°C minimum
RoHS Status: ROHS3 Compliant

Parametric Equivalent Parts maintain all mandatory equivalence parameters and are interchangeable within the same electrical and thermal operating envelope. These parts are classified as direct substitutes.

Similar Parts share the core electrical ratings but differ in package designation (SOD-123FL versus SOD-123W) or product status classification. These parts require physical verification of board layout compatibility and are subject to design status constraints.

Parameter Comparison

Parameter	ES1GLWHRVG	ES1GLW RVG	HS1GLW RVG	RS1GLW	RS1GLWHRVG	US1GFA
Manufacturer	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	onsemi
Voltage - DC Reverse (Vr) (Max)	400 V	400 V	400 V	400 V	400 V	400 V
Current - Average Rectified (Io)	1 A	1 A	1 A	1 A	1 A	1 A
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 1 A	1.3 V @ 1 A	1.3 V @ 1 A	1.3 V @ 1 A	1.3 V @ 1 A	1.3 V @ 1 A
Reverse Recovery Time (trr)	35 ns	35 ns	50 ns	150 ns	150 ns	50 ns
Current - Reverse Leakage @ Vr	5 µA @ 400 V	5 µA @ 400 V	1 µA @ 400 V	5 µA @ 400 V	5 µA @ 400 V	5 µA @ 400 V
Capacitance @ Vr, F	20 pF @ 4V, 1MHz	20 pF @ 4V, 1MHz	16 pF @ 4V, 1MHz	Not specified	Not specified	20 pF @ 4V, 1MHz
Package / Case	SOD-123W	SOD-123W	SOD-123W	SOD-123W	SOD-123W	SOD-123F
Operating Temperature - Junction	-55 to 175°C	-55 to 175°C	-55 to 175°C	-55 to 175°C	-55 to 175°C	-55 to 150°C
Product Status	Active	Active	Active	Active	Active	Not For New Designs
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalent Selection (ES1GLW RVG): ES1GLW RVG is a direct parametric equivalent to ES1GLWHRVG with identical electrical specifications, including reverse recovery time of 35 nanoseconds, forward voltage of 1.3 V at 1 A, and reverse leakage current of 5 µA at 400 V. Both parts are manufactured by Taiwan Semiconductor Corporation, carry Active product status, and are ROHS3 compliant. This part is suitable for direct substitution in applications where the original specification is maintained.

Parametric Equivalent Selection (HS1GLW RVG): HS1GLW RVG maintains all core electrical ratings of 400 V reverse voltage and 1 A average rectified current. This part exhibits improved reverse leakage characteristics at 1 µA (versus 5 µA) and lower capacitance at 16 pF. The reverse recovery time is 50 nanoseconds, representing a trade-off in switching speed. This part is suitable for applications where lower leakage current is beneficial and switching speed requirements permit the extended recovery time. Active product status and ROHS3 compliance are maintained.

Parametric Equivalent Selection (RS1GLW and RS1GLWHRVG): Both RS1GLW and RS1GLWHRVG maintain the 400 V / 1 A electrical envelope with identical forward voltage and reverse leakage specifications. These parts feature a reverse recovery time of 150 nanoseconds, representing a significant trade-off in switching speed compared to the ES1GLWHRVG. Capacitance data is not specified for these parts. Selection is appropriate for applications where switching speed is not a critical constraint and where inventory availability or cost considerations justify the extended recovery time. Both parts are Active and ROHS3 compliant.

Similar Part Selection (US1GFA): US1GFA is manufactured by onsemi and shares the core electrical specifications of 400 V reverse voltage and 1 A average rectified current. This part differs in package designation (SOD-123FL versus SOD-123W) and carries a product status classification of "Not For New Designs." The operating temperature range is limited to -55°C to 150°C (versus -55°C to 175°C for the main part). Selection of this part is restricted to legacy design maintenance or applications where the reduced temperature range is acceptable. Physical board layout verification is required due to package differences.

Frequently Asked Questions (FAQ)

Q: Can ES1GLW RVG be used as a direct replacement for ES1GLWHRVG?

A: Yes. ES1GLW RVG is a parametric equivalent with identical voltage ratings (400 V), current rating (1 A), forward voltage (1.3 V @ 1 A), reverse recovery time (35 ns), and reverse leakage current (5 µA @ 400 V). Both parts use the SOD-123W package and operate across the same temperature range (-55°C to 175°C). No circuit modifications are required.

Q: What is the difference between ES1GLWHRVG and HS1GLW RVG?

A: Both parts share the same voltage and current ratings. HS1GLW RVG offers lower reverse leakage current (1 µA versus 5 µA) and lower capacitance (16 pF versus 20 pF). However, HS1GLW RVG has a longer reverse recovery time of 50 nanoseconds compared to 35 nanoseconds for ES1GLWHRVG. Selection depends on whether the application prioritizes leakage current reduction or switching speed performance.

Q: Why do RS1GLW and RS1GLWHRVG have longer reverse recovery times?

A: Reverse recovery time is a characteristic of the diode's internal structure and manufacturing process. RS1GLW and RS1GLWHRVG are designed with a reverse recovery time of 150 nanoseconds, which is longer than the 35 nanoseconds of ES1GLWHRVG. This trade-off is inherent to the device design and does not indicate a defect. These parts are suitable for applications where switching speed is not a limiting factor.

Q: Can US1GFA replace ES1GLWHRVG in new designs?

A: US1GFA carries a product status of "Not For New Designs," which indicates that onsemi has discontinued active development and support for this part. While the electrical specifications are compatible, this part is not recommended for new design implementations. Use of US1GFA is restricted to legacy design maintenance or replacement scenarios where the original part is no longer available.

Q: What is the significance of the SOD-123W versus SOD-123F package difference?

A: SOD-123W and SOD-123F are distinct surface mount package designations with different physical dimensions and lead configurations. While both are classified as SOD-123 variants, they are not mechanically interchangeable. Board layout, footprint design, and pick-and-place equipment compatibility must be verified before substituting between these package types. US1GFA uses SOD-123FL packaging and requires physical layout confirmation.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All parts listed—ES1GLW RVG, HS1GLW RVG, RS1GLW, RS1GLWHRVG, and US1GFA—carry ROHS3 compliance certification. All parts also maintain Moisture Sensitivity Level (MSL) 1 classification, indicating unlimited shelf life without special moisture control requirements.

Q: What is the operating temperature range difference between ES1GLWHRVG and US1GFA?

A: ES1GLWHRVG operates across a junction temperature range of -55°C to 175°C, while US1GFA is limited to -55°C to 150°C. Applications requiring operation above 150°C junction temperature must use ES1GLWHRVG or other Taiwan Semiconductor Corporation alternatives. This temperature limitation is an additional constraint for US1GFA selection in new designs.

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