ES1GH Equivalent & Substitute Parts

Part Overview

The ES1GH is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 400 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This component is classified as a fast recovery diode with a reverse recovery time of 35 ns and is qualified to AEC-Q101 automotive standards. The part is currently active in production with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified when design requirements permit component changes due to manufacturing availability, supply chain optimization, or design flexibility within specified electrical and mechanical parameters.

Substiute Parts

ES1GH
Taiwan Semiconductor CorporationIn Stock: 1173ES1GH Datasheet
ES1GH
Current Part
ES1G
Good-Ark SemiconductorIn Stock: 415377ES1G Datasheet
ES1G
Parametric Equivalent
HS1G
SURGEIn Stock: 7297HS1G Datasheet
HS1G
Parametric Equivalent
RS1G
Taiwan Semiconductor CorporationIn Stock: 25431RS1G Datasheet
RS1G
Parametric Equivalent
RS1G R3G
Taiwan Semiconductor CorporationIn Stock: 265557RS1G R3G Datasheet
RS1G R3G
Parametric Equivalent
RS1GH
Taiwan Semiconductor CorporationIn Stock: 16067RS1GH Datasheet
RS1GH
Parametric Equivalent
CGRA4004-G
Comchip TechnologyIn Stock: 20203CGRA4004-G Datasheet
CGRA4004-G
Similar
ES1G-13-F
Diodes IncorporatedIn Stock: 420370ES1G-13-F Datasheet
ES1G-13-F
Similar
ES2G-LTP
Micro Commercial CoIn Stock: 783ES2G-LTP Datasheet
ES2G-LTP
Similar
GS1G-LTP
Micro Commercial CoIn Stock: 14366GS1G-LTP Datasheet
GS1G-LTP
Similar
GS2G-LTP
Micro Commercial CoIn Stock: 30669GS2G-LTP Datasheet
GS2G-LTP
Similar
RS1G-13-F
Diodes IncorporatedIn Stock: 115102RS1G-13-F Datasheet
RS1G-13-F
Similar
RS1GB-13-F
Diodes IncorporatedIn Stock: 1912RS1GB-13-F Datasheet
RS1GB-13-F
Similar
S1G-13-F
Diodes IncorporatedIn Stock: 156110S1G-13-F Datasheet
S1G-13-F
Similar
S1GB-13-F
Diodes IncorporatedIn Stock: 69736S1GB-13-F Datasheet
S1GB-13-F
Similar
SA2G-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 21656SA2G-E3/5AT Datasheet
SA2G-E3/5AT
Similar
STTH1R04AY
STMicroelectronicsIn Stock: 26262STTH1R04AY Datasheet
STTH1R04AY
Similar
US1G-13-F
Diodes IncorporatedIn Stock: 155328US1G-13-F Datasheet
US1G-13-F
Similar
US1G-TP
Micro Commercial CoIn Stock: 19143US1G-TP Datasheet
US1G-TP
Similar
US2GA-TP
Micro Commercial CoIn Stock: 2323US2GA-TP Datasheet
US2GA-TP
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ES1G
Good-Ark SemiconductorIn Stock: 415377ES1G Datasheet
ES1G
Parametric Equivalent
ES1G
Good-Ark SemiconductorIn Stock: 415377ES1G Datasheet
ES1G
Parametric Equivalent
RS1G
Taiwan Semiconductor CorporationIn Stock: 25431RS1G Datasheet
RS1G
Parametric Equivalent
RS1G-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 20115RS1G-E3/5AT Datasheet
RS1G-E3/5AT
Parametric Equivalent
RS1G-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 24212RS1G-E3/61T Datasheet
RS1G-E3/61T
Parametric Equivalent
RS1G-HF
Comchip TechnologyIn Stock: 716RS1G-HF Datasheet
RS1G-HF
Parametric Equivalent
RS1G_R1_00001
Panjit International Inc.In Stock: 4964RS1G_R1_00001 Datasheet
RS1G_R1_00001
Parametric Equivalent
RS1GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 8993RS1GHE3_A/H Datasheet
RS1GHE3_A/H
Parametric Equivalent
RS1GHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 5816RS1GHE3_A/I Datasheet
RS1GHE3_A/I
Parametric Equivalent
US1G_R1_00001
Panjit International Inc.In Stock: 505747US1G_R1_00001 Datasheet
US1G_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) Maximum 400 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) Maximum @ If 1.3 V @ 1 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 400 V
Capacitance @ Vr, F 16 pF @ 4V, 1MHz
Package / Case DO-214AC, SMA
Operating Temperature - Junction -55 to 150 °C
Grade Automotive
Qualification AEC-Q101
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the ES1GH are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalent Parts share all critical electrical specifications with the main part: 400 V reverse voltage rating, 1 A average rectified current, 1.3 V forward voltage at 1 A, fast recovery speed classification (≤ 500ns), DO-214AC (SMA) surface mount package, and operating temperature range of -55°C to 150°C. These parts are direct functional replacements within the specified parameter envelope.

Similar Parts maintain the same voltage and current ratings, package type, and operating temperature range but differ in one or more secondary parameters such as reverse recovery time, forward voltage characteristics, speed classification, or capacitance values. These parts are suitable for applications where the specific parameter variance does not impact circuit performance.

The following parameters determine substitution eligibility:

  • Voltage - DC Reverse (Vr) Maximum: 400 V (required)
  • Current - Average Rectified (Io): 1 A (required)
  • Package / Case: DO-214AC, SMA (required)
  • Operating Temperature - Junction: -55°C to 150°C minimum (required)
  • Mounting Type: Surface Mount (required)

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) V Io (A) Vf (Max) @ If (V) Speed trr (ns) Ir @ Vr (µA) C @ Vr (pF) Temp Range (°C) Grade Status
ES1GH Taiwan Semiconductor Corporation 400 1 1.3 @ 1 A Fast Recovery ≤ 500ns 35 5 @ 400 V 16 @ 4V, 1MHz -55 to 150 Automotive AEC-Q101 Active
ES1G Good-Ark Semiconductor 400 1 1.3 @ 1 A Fast Recovery ≤ 500ns 35 5 @ 400 V 8 @ 4V, 1MHz -55 to 125 Active
HS1G SURGE 400 1 1.3 @ 1 A Fast Recovery ≤ 500ns 50 5 @ 400 V 20 @ 4V, 1MHz -55 to 150 Active
RS1G Taiwan Semiconductor Corporation 400 1 1.3 @ 1 A Fast Recovery ≤ 500ns 150 5 @ 400 V 10 @ 4V, 1MHz -55 to 150 Active
RS1G R3G Taiwan Semiconductor Corporation 400 1 1.3 @ 1 A Fast Recovery ≤ 500ns 150 5 @ 400 V 10 @ 4V, 1MHz -55 to 150 Discontinued at DiGi Electronics
RS1GH Taiwan Semiconductor Corporation 400 1 1.3 @ 1 A Fast Recovery ≤ 500ns 150 5 @ 400 V 10 @ 4V, 1MHz -55 to 150 Automotive AEC-Q101 Active
CGRA4004-G Comchip Technology 400 1 1.1 @ 1 A Standard Recovery >500ns 5 @ 400 V -55 to 150 Active
ES1G-13-F Diodes Incorporated 400 1 1.25 @ 1 A Fast Recovery ≤ 500ns 25 5 @ 400 V 20 @ 4V, 1MHz -55 to 150 Active
ES2G-LTP Micro Commercial Co 400 2 1.25 @ 2 A Fast Recovery ≤ 500ns 35 5 @ 400 V 15 @ 4V, 1MHz -65 to 175 Active
GS1G-LTP Micro Commercial Co 400 1 1.0 @ 1 A Standard Recovery >500ns 10 @ 400 V 15 @ 4V, 1MHz -55 to 150 Not For New Designs
GS2G-LTP Micro Commercial Co 400 2 1.1 @ 2 A Standard Recovery >500ns 5 @ 400 V 20 @ 4V, 1MHz -55 to 150 Not For New Designs

Engineering Selection Recommendations

Parametric Equivalent Selection (Direct Replacement)

RS1GH is the recommended parametric equivalent for the ES1GH. Both parts are manufactured by Taiwan Semiconductor Corporation, carry AEC-Q101 automotive qualification, maintain identical voltage and current ratings (400 V, 1 A), and operate across the -55°C to 150°C temperature range. The primary difference is reverse recovery time: RS1GH exhibits 150 ns compared to ES1GH's 35 ns. This variance is acceptable in applications where switching speed is not a critical constraint. RS1GH is actively produced and ROHS3 compliant.

ES1G (Good-Ark Semiconductor) is a parametric equivalent with identical electrical specifications except for a reduced maximum operating temperature of 125°C versus 150°C. This part is suitable for applications operating within the -55°C to 125°C range. The lower capacitance value (8 pF versus 16 pF) may provide improved high-frequency performance in certain circuit topologies.

Similar Part Selection (Application-Dependent)

ES1G-13-F (Diodes Incorporated) maintains fast recovery characteristics with a faster reverse recovery time of 25 ns, making it suitable for high-frequency switching applications. The forward voltage is slightly lower at 1.25 V versus 1.3 V, resulting in reduced power dissipation. This part is actively produced and ROHS3 compliant.

HS1G (SURGE) is suitable for applications where the 50 ns reverse recovery time and higher capacitance (20 pF) do not present circuit constraints. This part maintains the full -55°C to 150°C operating range and is actively produced.

Parts Not Recommended for New Designs

GS1G-LTP and GS2G-LTP are marked "Not For New Designs" and should not be selected for new circuit development. These parts employ standard recovery speed classification (>500ns) rather than fast recovery, making them unsuitable for applications requiring fast switching performance.

RS1G R3G is discontinued at DiGi Electronics and should not be selected for new designs or production applications.

Current Rating Variance

ES2G-LTP and GS2G-LTP are rated for 2 A average rectified current, exceeding the 1 A requirement of the ES1GH. These parts are oversized for 1 A applications and should not be selected unless circuit design specifically requires the higher current rating.

Frequently Asked Questions (FAQ)

Q: Can ES1G (Good-Ark Semiconductor) replace ES1GH in all applications?

A: ES1G is a parametric equivalent with identical voltage, current, and speed ratings. The maximum operating temperature is reduced from 150°C to 125°C. If your application operates within -55°C to 125°C, ES1G is a direct replacement. If junction temperatures exceed 125°C, ES1G is not suitable.

Q: What is the significance of reverse recovery time (trr) differences between substitute parts?

A: Reverse recovery time affects switching speed and electromagnetic interference (EMI) characteristics. ES1GH has 35 ns trr, while RS1GH has 150 ns. In low-frequency rectification circuits, this difference is negligible. In high-frequency switching applications (>100 kHz), the faster ES1GH or ES1G-13-F (25 ns) may be required to minimize switching losses and EMI.

Q: Are GS1G-LTP and GS2G-LTP suitable replacements?

A: No. These parts are classified as "Not For New Designs" and employ standard recovery speed (>500ns) rather than fast recovery. They are unsuitable for applications requiring fast switching performance and should not be selected for new circuit development.

Q: Can I use ES2G-LTP or GS2G-LTP in place of ES1GH?

A: These parts are rated for 2 A average rectified current, exceeding the 1 A specification of ES1GH. While electrically compatible at 1 A operation, they are oversized for this application. Use only if circuit design specifically requires the higher current rating or if 1 A-rated parts are unavailable.

Q: What is the difference between ES1GH and RS1GH?

A: Both parts are manufactured by Taiwan Semiconductor Corporation and carry AEC-Q101 automotive qualification. The primary difference is reverse recovery time: ES1GH is 35 ns (fast recovery), while RS1GH is 150 ns. Both maintain 400 V, 1 A ratings and -55°C to 150°C operating range. RS1GH is suitable for applications where switching speed is not critical.

Q: Is CGRA4004-G a suitable replacement?

A: CGRA4004-G maintains the 400 V, 1 A ratings and DO-214AC package. However, it employs standard recovery speed (>500ns) rather than fast recovery, and forward voltage is lower at 1.1 V. This part is suitable only for low-frequency rectification applications where fast switching is not required.

Q: What packaging options are available for equivalent parts?

A: All substitute parts listed are supplied in DO-214AC (SMA) surface mount package. Packaging formats vary by supplier: Tape & Reel (TR), Cut Tape (CT), Cut Tape & Digi-Reel, and Bag. Select the packaging format compatible with your assembly process.

Q: Are all substitute parts ROHS3 compliant?

A: All substitute parts listed are ROHS3 compliant. All parts carry MSL 1 (Unlimited) moisture sensitivity level, permitting standard storage and handling without desiccant requirements.

Q: Which substitute part has the lowest forward voltage drop?

A: GS1G-LTP has the lowest forward voltage at 1.0 V @ 1 A, followed by CGRA4004-G at 1.1 V. However, GS1G-LTP is marked "Not For New Designs." ES1G-13-F offers 1.25 V with active production status and fast recovery characteristics.

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