ES1G Equivalent & Substitute Parts

Part Overview

The ES1G is a general-purpose rectifier diode manufactured by onsemi, rated for 400 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This component is classified as "Not For New Designs," indicating it has been superseded in onsemi's product portfolio. Identifying equivalent and substitute parts is necessary for applications requiring continued support, legacy system maintenance, or when the primary part becomes unavailable. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating packaging and recovery speed variations.

Key Parameters

Parameter	ES1G Value	Unit
Voltage - DC Reverse (Vr) (Max)	400	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.3 @ 1 A	V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	5	µA @ 400 V
Capacitance @ Vr, F	10	pF @ 4V, 1MHz
Package / Case	DO-214AC, SMA	—
Operating Temperature - Junction (Max)	150	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the ES1G are grouped based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Mandatory Matching Criteria:

Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1 A
Package / Case: DO-214AC, SMA (surface mount)
Mounting Type: Surface Mount

Secondary Compatibility Factors:

Voltage - Forward (Vf) (Max) @ If: Must not exceed 1.3 V @ 1 A for direct drop-in replacement
Speed Classification: Fast Recovery (≤ 500ns) preferred for timing-critical applications; Standard Recovery (> 500ns) acceptable for non-critical applications
Reverse Recovery Time (trr): Lower values (25–35 ns) preferred; higher values (65–150 ns) acceptable depending on circuit requirements
Current - Reverse Leakage @ Vr: 1–10 µA @ 400 V acceptable range
Operating Temperature - Junction: Minimum -55°C to maximum 150°C required

Packaging Variants:

Cut Tape (CT) & Digi-Reel® and Tape & Reel (TR) packaging are functionally equivalent for component selection
Bulk packaging is acceptable for non-production environments

Parts meeting all mandatory criteria and RoHS3 compliance are classified as direct substitutes. Parts with higher current ratings (2 A) are listed for reference but are not direct substitutes due to different electrical characteristics.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	Speed Classification	trr [ns]	Ir @ Vr [µA]	Package	Tj (Max) [°C]	Product Status
ES1G	onsemi	400	1	1.3 @ 1 A	Fast Recovery ≤ 500ns	35	5 @ 400 V	DO-214AC (SMA)	150	Not For New Designs
MRA4004T3G	onsemi	400	1	1.1 @ 1 A	Standard Recovery > 500ns	—	10 @ 400 V	DO-214AC (SMA)	175	Not For New Designs
NRVA4004T3G	onsemi	400	1	1.1 @ 1 A	Standard Recovery > 500ns	—	10 @ 400 V	DO-214AC (SMA)	175	Not For New Designs
RS1G	Taiwan Semiconductor Corporation	400	1	1.3 @ 1 A	Fast Recovery ≤ 500ns	150	5 @ 400 V	DO-214AC (SMA)	150	Active
S1G	Diotec Semiconductor	400	1	1.1 @ 1 A	Standard Recovery > 500ns	1500	1 @ 400 V	DO-214AC (SMA)	150	Active
CGRA4004-G	Comchip Technology	400	1	1.1 @ 1 A	Standard Recovery > 500ns	—	5 @ 400 V	DO-214AC (SMA)	150	Active
CMR1-04M BK PBFREE	Central Semiconductor Corp	400	1	1.1 @ 1 A	Standard Recovery > 500ns	—	10 @ 400 V	DO-214AC (SMA)	150	Active
CMR1-04M TR13 PBFREE	Central Semiconductor Corp	400	1	1.1 @ 1 A	Standard Recovery > 500ns	—	5 @ 400 V	DO-214AC (SMA)	150	Active
ES1G-13-F	Diodes Incorporated	400	1	1.25 @ 1 A	Fast Recovery ≤ 500ns	25	5 @ 400 V	DO-214AC (SMA)	150	Active
ES1G_R1_00001	Panjit International Inc.	400	1	1.25 @ 1 A	Fast Recovery ≤ 500ns	35	1 @ 400 V	DO-214AC (SMA)	150	Active
MURA140T3G	onsemi	400	2	1.1 @ 1 A	Fast Recovery ≤ 500ns	65	5 @ 400 V	DO-214AC (SMA)	175	Active

Engineering Selection Recommendations

Direct Substitutes (Electrical and Mechanical Equivalence):

Parts meeting all mandatory criteria with active product status are preferred for new applications and ongoing support:

ES1G-13-F (Diodes Incorporated): Active status, fast recovery characteristics (25 ns trr), forward voltage 1.25 V @ 1 A, identical thermal rating (150°C). Highest inventory availability (420,300 pcs). Recommended for direct replacement in timing-sensitive applications.
ES1G_R1_00001 (Panjit International Inc.): Active status, fast recovery characteristics (35 ns trr matching original), forward voltage 1.25 V @ 1 A, lowest reverse leakage (1 µA @ 400 V). Suitable for applications requiring minimal leakage current.
RS1G (Taiwan Semiconductor Corporation): Active status, fast recovery characteristics, forward voltage 1.3 V @ 1 A (matching original), identical thermal rating (150°C). Longer reverse recovery time (150 ns) acceptable for non-critical timing applications.

Functional Substitutes (Electrical Compatibility with Trade-offs):

Parts with standard recovery characteristics (> 500ns) are suitable for applications where switching speed is not critical:

CGRA4004-G (Comchip Technology): Active status, standard recovery, forward voltage 1.1 V @ 1 A (lower than original), reverse leakage 5 µA @ 400 V. Suitable for low-speed rectification circuits.
CMR1-04M TR13 PBFREE (Central Semiconductor Corp): Active status, standard recovery, forward voltage 1.1 V @ 1 A, reverse leakage 5 µA @ 400 V, capacitance data provided (8 pF @ 4V, 1MHz). Recommended for applications with detailed capacitance requirements.
S1G (Diotec Semiconductor): Active status, standard recovery with extended reverse recovery time (1500 ns), forward voltage 1.1 V @ 1 A, lowest reverse leakage (1 µA @ 400 V). Suitable for low-frequency rectification with minimal leakage requirements.

Not Recommended for Direct Substitution:

MRA4004T3G and NRVA4004T3G (onsemi): Both marked "Not For New Designs," same status as original part. Extended operating temperature range (-55°C to 175°C) does not offset legacy status.
MURA140T3G (onsemi): Higher current rating (2 A) changes electrical characteristics and is not a direct substitute for 1 A applications.

Compliance and Certification:

All listed substitute parts are RoHS3 compliant and REACH unaffected, matching the original ES1G specifications. No automotive-grade qualification is required unless specified in the application. Moisture Sensitivity Level (MSL) 1 (Unlimited) is maintained across all substitutes.

Frequently Asked Questions (FAQ)

Q: Can I use a 2 A rated diode (MURA140T3G) as a substitute for the 1 A ES1G?

A: No. While the MURA140T3G shares the same 400 V reverse voltage rating and DO-214AC package, its 2 A current rating represents a different electrical design. Using a higher-rated component in a 1 A circuit introduces unnecessary cost and may alter circuit behavior due to different junction capacitance and recovery characteristics. Select a 1 A rated substitute instead.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes (trr ≤ 500 ns) switch off more quickly, reducing switching losses and noise in high-frequency applications. Standard recovery diodes (trr > 500 ns) are suitable for low-frequency rectification where switching speed is not critical. The ES1G is fast recovery; substitutes with standard recovery are acceptable only if the application does not require fast switching.

Q: Are Cut Tape (CT) and Tape & Reel (TR) packaging interchangeable?

A: Yes, for component selection purposes. Both packaging formats contain identical diodes in DO-214AC (SMA) packages. The difference is in handling and delivery format. Cut Tape is suitable for manual assembly or small quantities; Tape & Reel is standard for automated pick-and-place assembly. Select based on your assembly process requirements, not electrical performance.

Q: Why is the ES1G marked "Not For New Designs"?

A: This designation indicates that onsemi has superseded the ES1G in its product portfolio. While existing inventory remains available, the manufacturer recommends using newer alternatives for new designs. For legacy system support or when ES1G inventory is depleted, select an active-status substitute such as ES1G-13-F or RS1G.

Q: What does reverse leakage current mean, and why does it vary among substitutes?

A: Reverse leakage current (Ir) is the small current that flows through a reverse-biased diode. Lower values (1–5 µA) indicate better diode quality and lower power dissipation in standby conditions. Higher values (10 µA) are still acceptable for most applications but may increase heat generation in circuits with sustained reverse bias. Select based on your application's power budget.

Q: Can I substitute ES1G with a part having lower forward voltage (1.1 V vs. 1.3 V)?

A: Yes. Lower forward voltage reduces power dissipation and heat generation, which is beneficial. Parts such as CGRA4004-G, CMR1-04M, and S1G with 1.1 V forward voltage are direct substitutes. Verify that your circuit design does not depend on the original 1.3 V forward voltage specification.

Q: Is automotive qualification (AEC-Q101) required for my application?

A: Only if your application is automotive or requires automotive-grade reliability. NRVA4004T3G carries AEC-Q101 qualification; however, it is marked "Not For New Designs." For automotive applications requiring active-status parts, consult the substitute list for parts with automotive certification or contact the manufacturer.

Q: What is the significance of capacitance specifications in the parameter table?

A: Junction capacitance affects high-frequency performance and switching behavior. The ES1G specifies 10 pF @ 4V, 1MHz. Substitutes with similar or lower capacitance (7–20 pF) are compatible. Parts without capacitance data (marked "—") are still suitable unless your circuit requires precise capacitance matching for filtering or timing applications.

Q: How do I determine which substitute is best for my application?

A: Identify your application's critical requirements: (1) switching frequency (fast recovery preferred for high-frequency; standard recovery acceptable for low-frequency), (2) power dissipation constraints (lower forward voltage preferred), (3) reverse leakage sensitivity (lower values preferred for low-power circuits), (4) assembly process (Cut Tape for manual; Tape & Reel for automated). Match these requirements to the substitute part specifications in the parameter comparison table.

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