ES1DE-TP Equivalent & Substitute Parts

Part Overview

The ES1DE-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 200 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMAE) surface mount package. This part is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement continuity. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives within the same application category with comparable performance characteristics.

Substiute Parts

ES1DE-TP
Micro Commercial CoIn Stock: 905ES1DE-TP Datasheet
ES1DE-TP
Current Part
ES1D-LTP
Micro Commercial CoIn Stock: 335351ES1D-LTP Datasheet
ES1D-LTP
MFR Recommended
ES1D-TP
Micro Commercial CoIn Stock: 52667ES1D-TP Datasheet
ES1D-TP
Parametric Equivalent
CGRA4003-G
Comchip TechnologyIn Stock: 989CGRA4003-G Datasheet
CGRA4003-G
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CURA103-G
Comchip TechnologyIn Stock: 28976CURA103-G Datasheet
CURA103-G
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CURM103-G
Comchip TechnologyIn Stock: 6278CURM103-G Datasheet
CURM103-G
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EGF1D
onsemiIn Stock: 300362EGF1D Datasheet
EGF1D
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EGF1D-E3/5CA
Vishay General Semiconductor - Diodes DivisionIn Stock: 15349EGF1D-E3/5CA Datasheet
EGF1D-E3/5CA
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EGF1D-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 30174EGF1D-E3/67A Datasheet
EGF1D-E3/67A
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ES1D
EVVO SemiIn Stock: 140421ES1D Datasheet
ES1D
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ES1D-13-F
Diodes IncorporatedIn Stock: 550426ES1D-13-F Datasheet
ES1D-13-F
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ESH1D-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10257ESH1D-E3/61T Datasheet
ESH1D-E3/61T
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ESH1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1153ESH1D-M3/5AT Datasheet
ESH1D-M3/5AT
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ESH1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1041ESH1D-M3/61T Datasheet
ESH1D-M3/61T
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ESH1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 9509ESH1DHE3_A/H Datasheet
ESH1DHE3_A/H
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ESH1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 7842ESH1DHE3_A/I Datasheet
ESH1DHE3_A/I
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GF1D
Fairchild SemiconductorIn Stock: 18487GF1D Datasheet
GF1D
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GF1D-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 9688GF1D-E3/67A Datasheet
GF1D-E3/67A
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GF1D/1754
Vishay General Semiconductor - Diodes DivisionIn Stock: 1026GF1D/1754 Datasheet
GF1D/1754
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RGF1D-E3/5CA
Vishay General Semiconductor - Diodes DivisionIn Stock: 15215RGF1D-E3/5CA Datasheet
RGF1D-E3/5CA
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RS1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1137RS1D-M3/5AT Datasheet
RS1D-M3/5AT
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RS1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1450RS1D-M3/61T Datasheet
RS1D-M3/61T
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RS1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 7752RS1DHE3_A/H Datasheet
RS1DHE3_A/H
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RS1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 7271RS1DHE3_A/I Datasheet
RS1DHE3_A/I
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S1D
YAGEOIn Stock: 6087S1D Datasheet
S1D
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S1D-13-F
Diodes IncorporatedIn Stock: 300326S1D-13-F Datasheet
S1D-13-F
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S1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1035S1D-M3/5AT Datasheet
S1D-M3/5AT
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S1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 12778S1D-M3/61T Datasheet
S1D-M3/61T
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S1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 2957S1DHE3_A/H Datasheet
S1DHE3_A/H
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S1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 6250S1DHE3_A/I Datasheet
S1DHE3_A/I
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STTH102A
STMicroelectronicsIn Stock: 10338STTH102A Datasheet
STTH102A
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STTH102AY
STMicroelectronicsIn Stock: 31268STTH102AY Datasheet
STTH102AY
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U1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 14293U1D-M3/5AT Datasheet
U1D-M3/5AT
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U1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1188U1D-M3/61T Datasheet
U1D-M3/61T
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US1D-13-F
Diodes IncorporatedIn Stock: 155307US1D-13-F Datasheet
US1D-13-F
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 975 mV @ 1 A mV
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Operating Temperature - Junction -50°C ~ 150°C °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the ES1DE-TP is determined by the following critical parameters:

  • Voltage Rating: All substitute parts must maintain 200 V DC reverse voltage (Vr) maximum
  • Current Rating: All substitute parts must support 1 A average rectified current (Io)
  • Package Type: Primary substitutes use DO-214AC (SMA) surface mount package; alternative packages (DO-214BA, SOD-123) are listed as similar parts with package differences noted
  • Recovery Characteristics: Fast recovery technology with reverse recovery time (trr) ≤ 500 ns for > 200 mA
  • Reverse Leakage: Maximum 5 µA @ 200 V
  • Compliance: ROHS3 compliance and MSL 1 rating required for equivalent substitution
  • Temperature Range: Operating junction temperature range -50°C to 150°C (minimum requirement)

Parts are grouped into three categories: MFR Recommended (active status, preferred), Parametric Equivalent (same electrical specifications, different package variant), and Similar (functionally compatible with minor parameter variations or package differences).

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 1A [mV] trr [ns] Ir @ 200V [µA] Package Status
ES1DE-TP Micro Commercial Co 200 1 975 50 5 DO-214AC (SMAE) Obsolete
ES1D-LTP Micro Commercial Co 200 1 950 35 5 DO-214AC (SMA) Active
ES1D-TP Micro Commercial Co 200 1 975 50 5 DO-214AC (HSMA) Obsolete
CGRA4003-G Comchip Technology 200 1 1100 5 DO-214AC (SMA) Active
CURA103-G Comchip Technology 200 1 1000 50 5 DO-214AC (SMA) Active
CURM103-G Comchip Technology 200 1 1000 50 5 SOD-123T Active
EGF1D onsemi 200 1 1000 50 10 DO-214AC (SMA) Not For New Designs
EGF1D-E3/5CA Vishay General Semiconductor 200 1 1000 50 5 DO-214BA Active
EGF1D-E3/67A Vishay General Semiconductor 200 1 1000 50 5 DO-214BA Active
ES1D EVVO Semi 200 1 1000 35 5 DO-214AC (SMA) Active
ES1D-13-F Diodes Incorporated 200 1 920 25 5 DO-214AC (SMA) Active

Engineering Selection Recommendations

Primary Recommendation: ES1D-LTP (Micro Commercial Co)

The ES1D-LTP is the manufacturer-recommended substitute, produced by the same manufacturer as the obsolete ES1DE-TP. This part maintains identical voltage and current ratings (200 V, 1 A) with improved electrical performance: forward voltage reduced to 950 mV (versus 975 mV) and reverse recovery time improved to 35 ns (versus 50 ns). The part is in active production status with extensive inventory availability (335,300 units). Operating temperature range extends to -65°C to 175°C, providing broader thermal coverage. Package variant is DO-214AC (SMA) with standard tape and reel packaging. ROHS3 compliance and MSL 1 rating are maintained.

Secondary Recommendations (Active Status, DO-214AC SMA Package):

  • ES1D-13-F (Diodes Incorporated): Lowest forward voltage (920 mV) and fastest recovery time (25 ns) among active alternatives. Highest inventory availability (550,400 units). Identical voltage/current ratings and package type.

  • ES1D (EVVO Semi): Active production with 140,400 units in stock. Forward voltage 1000 mV, recovery time 35 ns. Maintains all critical electrical parameters.

  • CURA103-G (Comchip Technology): Active status with 28,880 units available. Forward voltage 1000 mV, recovery time 50 ns. Identical to original specifications in these parameters.

Alternative Package Consideration:

  • EGF1D-E3/5CA and EGF1D-E3/67A (Vishay General Semiconductor): Both active production, SUPERECTIFIER® series. Use DO-214BA package instead of DO-214AC. Electrical specifications identical to primary recommendations. Select only if DO-214BA footprint compatibility exists in design.

Not Recommended for New Designs:

  • EGF1D (onsemi): Marked "Not For New Designs" despite active inventory. Reverse leakage current elevated to 10 µA (versus 5 µA specification).

  • ES1D-TP (Micro Commercial Co): Parametric equivalent but obsolete status. Use ES1D-LTP instead.

Frequently Asked Questions (FAQ)

Q: Can ES1D-LTP directly replace ES1DE-TP without PCB modification?

A: Yes. Both parts use DO-214AC (SMA) surface mount package with identical pinout and footprint. The package variant difference (SMAE versus SMA) refers to tape reel configuration, not physical dimensions. No PCB layout changes are required.

Q: What is the difference between DO-214AC (SMAE), DO-214AC (SMA), and DO-214AC (HSMA)?

A: These designations refer to tape and reel packaging configurations used during manufacturing and shipping, not the component itself. SMAE, SMA, and HSMA all represent the same physical DO-214AC package. Component performance and PCB footprint are identical. Selection between these variants depends on supplier availability and packaging requirements.

Q: Why does ES1D-13-F have a lower forward voltage (920 mV) than the original (975 mV)?

A: Forward voltage variation within the 200 V, 1 A rectifier diode category is normal across manufacturers and production batches. The ES1D-13-F specification of 920 mV is within acceptable limits and represents improved efficiency (lower power dissipation) compared to the original 975 mV specification. This is a beneficial characteristic for thermal management.

Q: Can CURM103-G (SOD-123T package) be used as a substitute?

A: CURM103-G is electrically equivalent (200 V, 1 A, fast recovery) but uses SOD-123T package instead of DO-214AC (SMA). This requires PCB footprint redesign and cannot be used as a direct drop-in replacement. Select only if design layout permits package change.

Q: What is the significance of "Not For New Designs" status on EGF1D?

A: This designation indicates the part is in production but the manufacturer recommends against using it in new circuit designs. Existing inventory may be available, but long-term supply cannot be guaranteed. Use active-status alternatives (ES1D-LTP, ES1D-13-F, or ES1D) for new designs.

Q: Are all listed substitutes ROHS3 compliant?

A: Yes. All parts in this reference list maintain ROHS3 compliance and MSL 1 (unlimited moisture sensitivity) rating, matching the original ES1DE-TP specifications.

Q: What is the practical difference between 35 ns and 50 ns reverse recovery time?

A: Reverse recovery time (trr) affects switching speed and electromagnetic interference characteristics. The 35 ns specification (ES1D-LTP, ES1D) represents faster switching compared to 50 ns (ES1DE-TP, CURA103-G). For most general-purpose rectification applications, both values are acceptable. Faster recovery time reduces switching losses in high-frequency circuits.

Q: Which substitute offers the best thermal performance?

A: ES1D-13-F offers the lowest forward voltage (920 mV) at 1 A, resulting in minimum power dissipation and heat generation. ES1D-LTP and ES1D (both 950 mV and 1000 mV respectively) provide secondary options. Lower forward voltage directly correlates to reduced thermal load in the application circuit.

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