ES1D-13 Equivalent & Substitute Parts

Part Overview

The ES1D-13 is a general-purpose rectifier diode manufactured by Diodes Incorporated, rated for 200 V DC reverse voltage and 1 A average rectified current in a surface mount SMA package. This part is classified as discontinued at DiGi Electronics, which necessitates identification of functionally equivalent alternatives for ongoing design support and procurement.

The ES1D-13 operates across a junction temperature range of -55°C to 150°C and features fast recovery characteristics with a reverse recovery time of 25 nanoseconds. The part is RoHS non-compliant and carries an MSL rating of 1 (unlimited moisture sensitivity level).

Substiute Parts

ES1D-13
Diodes IncorporatedIn Stock: 804ES1D-13 Datasheet
ES1D-13
Current Part
ES1D-13-F
Diodes IncorporatedIn Stock: 550426ES1D-13-F Datasheet
ES1D-13-F
Direct
CSFA103-G
Comchip TechnologyIn Stock: 19985CSFA103-G Datasheet
CSFA103-G
MFR Recommended
CURA103-G
Comchip TechnologyIn Stock: 28976CURA103-G Datasheet
CURA103-G
MFR Recommended
EGF1D
onsemiIn Stock: 300362EGF1D Datasheet
EGF1D
MFR Recommended
ES1D-LTP
Micro Commercial CoIn Stock: 335351ES1D-LTP Datasheet
ES1D-LTP
MFR Recommended
ESH1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 9509ESH1DHE3_A/H Datasheet
ESH1DHE3_A/H
MFR Recommended
ESH1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 7842ESH1DHE3_A/I Datasheet
ESH1DHE3_A/I
MFR Recommended
FS1DE-TP
Micro Commercial CoIn Stock: 918FS1DE-TP Datasheet
FS1DE-TP
MFR Recommended
GF1D
Fairchild SemiconductorIn Stock: 18487GF1D Datasheet
GF1D
MFR Recommended
RGF1D
onsemiIn Stock: 53315RGF1D Datasheet
RGF1D
MFR Recommended
RS1D
Taiwan Semiconductor CorporationIn Stock: 20226RS1D Datasheet
RS1D
MFR Recommended
RS1D-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 2231RS1D-E3/61T Datasheet
RS1D-E3/61T
MFR Recommended
RS1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 7752RS1DHE3_A/H Datasheet
RS1DHE3_A/H
MFR Recommended
RS1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 7271RS1DHE3_A/I Datasheet
RS1DHE3_A/I
MFR Recommended
S1D
YAGEOIn Stock: 6087S1D Datasheet
S1D
MFR Recommended
S1D-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1027S1D-E3/5AT Datasheet
S1D-E3/5AT
MFR Recommended
S1D-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 126135S1D-E3/61T Datasheet
S1D-E3/61T
MFR Recommended
S1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 2957S1DHE3_A/H Datasheet
S1DHE3_A/H
MFR Recommended
S1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 6250S1DHE3_A/I Datasheet
S1DHE3_A/I
MFR Recommended
STTH102A
STMicroelectronicsIn Stock: 10338STTH102A Datasheet
STTH102A
MFR Recommended
STTH102AY
STMicroelectronicsIn Stock: 31268STTH102AY Datasheet
STTH102AY
MFR Recommended
STTH1R02A
STMicroelectronicsIn Stock: 1738STTH1R02A Datasheet
STTH1R02A
MFR Recommended
STTH2R02A
STMicroelectronicsIn Stock: 116772STTH2R02A Datasheet
STTH2R02A
MFR Recommended
US1D-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 6012US1D-E3/5AT Datasheet
US1D-E3/5AT
MFR Recommended
US1D-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 83907US1D-E3/61T Datasheet
US1D-E3/61T
MFR Recommended
US1D-TP
Micro Commercial CoIn Stock: 3497US1D-TP Datasheet
US1D-TP
MFR Recommended
ES1D
EVVO SemiIn Stock: 140421ES1D Datasheet
ES1D
Parametric Equivalent
ES1D-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 20111ES1D-E3/5AT Datasheet
ES1D-E3/5AT
Parametric Equivalent
ES1D-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 2328676ES1D-E3/61T Datasheet
ES1D-E3/61T
Parametric Equivalent
ES1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 3252ES1D-M3/61T Datasheet
ES1D-M3/61T
Parametric Equivalent
ES1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 24818ES1DHE3_A/H Datasheet
ES1DHE3_A/H
Parametric Equivalent
ES1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 20305ES1DHE3_A/I Datasheet
ES1DHE3_A/I
Parametric Equivalent
ES1DV
Taiwan Semiconductor CorporationIn Stock: 15797ES1DV Datasheet
ES1DV
Parametric Equivalent
ES1DVH
Taiwan Semiconductor CorporationIn Stock: 15805ES1DVH Datasheet
ES1DVH
Parametric Equivalent
SES1D
SMC Diode SolutionsIn Stock: 9295SES1D Datasheet
SES1D
Parametric Equivalent
U1D-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 8410U1D-E3/5AT Datasheet
U1D-E3/5AT
Parametric Equivalent
U1D-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 34418U1D-E3/61T Datasheet
U1D-E3/61T
Parametric Equivalent
U1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 14293U1D-M3/5AT Datasheet
U1D-M3/5AT
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 920 mV @ 1 A mV
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Capacitance @ Vr, F 20 pF @ 4V, 1MHz
Package / Case DO-214AC, SMA
Operating Temperature - Junction -55 to 150 °C
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the ES1D-13 is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Criteria:

  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC, SMA
  • Mounting Type: Surface Mount
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Acceptable Variation Ranges:

  • Voltage - Forward (Vf) (Max) @ If: 900 mV to 1.3 V @ 1 A
  • Reverse Recovery Time (trr): 25 ns to 150 ns
  • Current - Reverse Leakage @ Vr: 1 µA to 10 µA @ 200 V
  • Operating Temperature - Junction: Minimum -65°C, Maximum 150°C or higher
  • Capacitance @ Vr, F: 8.5 pF to 25 pF @ 4V, 1MHz

Substitute parts are grouped into two categories: Direct Manufacturer Equivalents (same base product number with different packaging or compliance variants) and Cross-Manufacturer Alternatives (functionally equivalent parts from different manufacturers meeting all mandatory criteria).

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 1A [mV] trr [ns] Ir @ 200V [µA] Cj @ 4V [pF] Tj (Min-Max) [°C] Product Status RoHS Status
ES1D-13 Diodes Incorporated 200 1 920 25 5 20 -55 to 150 Discontinued Non-compliant
ES1D-13-F Diodes Incorporated 200 1 920 25 5 20 -55 to 150 Active ROHS3 Compliant
CSFA103-G Comchip Technology 200 1 950 35 5 -55 to 150 Active ROHS3 Compliant
CURA103-G Comchip Technology 200 1 1000 50 5 -55 to 150 Active ROHS3 Compliant
EGF1D onsemi 200 1 1000 50 10 15 -65 to 175 Not For New Designs ROHS3 Compliant
ES1D-LTP Micro Commercial Co 200 1 950 35 5 15 -65 to 175 Active ROHS3 Compliant
ESH1DHE3_A/H Vishay General Semiconductor - Diodes Division 200 1 900 25 1 25 -55 to 175 Active ROHS3 Compliant
ESH1DHE3_A/I Vishay General Semiconductor - Diodes Division 200 1 900 25 1 25 -55 to 175 Active ROHS3 Compliant
FS1DE-TP Micro Commercial Co 200 1 1300 150 5 15 -50 to 150 Obsolete ROHS3 Compliant
GF1D Fairchild Semiconductor 200 1 1000 2000 5 15 -65 to 175 Active
RGF1D onsemi 200 1 1300 150 5 8.5 -65 to 175 Not For New Designs ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: ES1D-13-F

The ES1D-13-F is the direct successor to the ES1D-13, manufactured by Diodes Incorporated under the same base product number. This part maintains identical electrical specifications including forward voltage (920 mV @ 1 A), reverse recovery time (25 ns), and reverse leakage current (5 µA @ 200 V). The ES1D-13-F is currently active in production and carries ROHS3 compliance, addressing the regulatory limitation of the discontinued ES1D-13. Packaging is available in both Cut Tape and Digi-Reel formats with 550,400 units in stock.

Secondary Recommendations for Active Production:

ESH1DHE3_A/H and ESH1DHE3_A/I (Vishay General Semiconductor - Diodes Division) provide the closest electrical match to the ES1D-13 with superior reverse leakage performance (1 µA @ 200 V versus 5 µA). Both variants maintain the 25 ns reverse recovery time and feature automotive-grade qualification (AEC-Q101). Operating temperature range extends to 175°C. These parts are actively produced with ROHS3 compliance.

ES1D-LTP (Micro Commercial Co) offers active production status with extended operating temperature range (-65°C to 175°C) and ROHS3 compliance. Forward voltage is 950 mV @ 1 A with 35 ns reverse recovery time, representing acceptable variation within specified parameters.

Alternative for Extended Temperature Applications:

EGF1D (onsemi) provides extended operating temperature to 175°C and is ROHS3 compliant. However, this part carries a "Not For New Designs" status, limiting its suitability for new development. Reverse leakage current is elevated at 10 µA @ 200 V.

Not Recommended for New Designs:

FS1DE-TP is classified as obsolete and exhibits forward voltage of 1.3 V @ 1 A with significantly extended reverse recovery time of 150 ns, representing substantial deviation from the ES1D-13 baseline.

GF1D (Fairchild Semiconductor) exhibits standard recovery characteristics (2 µs reverse recovery time) rather than fast recovery, making it unsuitable for applications requiring the fast recovery performance of the ES1D-13.

RGF1D (onsemi) is classified as "Not For New Designs" and exhibits forward voltage of 1.3 V @ 1 A with 150 ns reverse recovery time.

Frequently Asked Questions (FAQ)

Q: Can ES1D-13-F be used as a direct replacement for ES1D-13?

A: Yes. The ES1D-13-F maintains identical electrical specifications across all critical parameters: 200 V reverse voltage, 1 A average rectified current, 920 mV forward voltage @ 1 A, and 25 ns reverse recovery time. The primary difference is product status (active versus discontinued) and RoHS compliance (ROHS3 versus non-compliant). Both use the same DO-214AC SMA package.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Recovery speed is determined by reverse recovery time (trr). The ES1D-13 specifies fast recovery with trr ≤ 500 ns (actual value 25 ns). Standard recovery diodes exhibit trr > 500 ns. Fast recovery diodes are required in switching applications where rapid reverse bias transition is necessary. The GF1D, for example, exhibits 2 µs recovery time and is unsuitable for applications requiring fast recovery performance.

Q: Are Vishay ESH1DHE3 variants interchangeable with ES1D-13?

A: The ESH1DHE3_A/H and ESH1DHE3_A/I variants are electrically compatible with ES1D-13 across all mandatory parameters. Both maintain 200 V reverse voltage, 1 A current rating, and 25 ns reverse recovery time. Forward voltage is 900 mV @ 1 A (versus 920 mV), representing a 20 mV improvement. Reverse leakage is superior at 1 µA @ 200 V (versus 5 µA). Both variants carry automotive-grade qualification (AEC-Q101) and extended operating temperature to 175°C. The primary distinction is packaging format (Tape & Reel) and manufacturer.

Q: Why is FS1DE-TP not recommended as a substitute?

A: The FS1DE-TP is classified as obsolete and exhibits significant parameter deviations: forward voltage of 1.3 V @ 1 A (versus 920 mV) and reverse recovery time of 150 ns (versus 25 ns). These deviations exceed acceptable variation ranges and indicate fundamentally different device characteristics unsuitable for direct substitution.

Q: What is the significance of RoHS compliance status?

A: The ES1D-13 is RoHS non-compliant, while all active substitute parts (ES1D-13-F, CSFA103-G, CURA103-G, ES1D-LTP, ESH1DHE3 variants) carry ROHS3 compliance. RoHS compliance indicates the part does not contain restricted substances (lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls, or polybrominated diphenyl ethers) above specified thresholds. For applications subject to RoHS regulations or customer requirements, compliant alternatives are mandatory.

Q: Can Comchip CSFA103-G and CURA103-G be used interchangeably?

A: Both parts meet the mandatory substitution criteria (200 V, 1 A, DO-214AC SMA package, fast recovery). However, they exhibit different electrical characteristics. CSFA103-G specifies 950 mV forward voltage @ 1 A with 35 ns reverse recovery time. CURA103-G specifies 1000 mV forward voltage @ 1 A with 50 ns reverse recovery time. Selection depends on application requirements for forward voltage drop and switching speed. Both are ROHS3 compliant and actively produced.

Q: What is the operating temperature range significance?

A: The ES1D-13 operates from -55°C to 150°C junction temperature. Several substitutes extend this range to -65°C minimum and/or 175°C maximum (ES1D-LTP, EGF1D, ESH1DHE3 variants, RGF1D). Extended temperature range is beneficial for applications operating in extreme thermal environments. However, the ES1D-13-F maintains the original -55°C to 150°C range, making it the most direct replacement for existing designs with established thermal specifications.

Q: Is packaging format (Cut Tape versus Tape & Reel) significant for substitution?

A: Packaging format affects procurement and assembly processes but does not impact electrical performance. ES1D-13-F is available in both Cut Tape (CT) and Digi-Reel formats. Vishay ESH1DHE3 variants are supplied in Tape & Reel (TR) format. Selection depends on manufacturing process requirements and volume. All parts use the same DO-214AC SMA physical package suitable for surface mount assembly.

Q: Why are some parts marked "Not For New Designs"?

A: Parts designated "Not For New Designs" (EGF1D, RGF1D) are in mature or declining production phases. While electrically functional and available in inventory, manufacturers recommend against incorporating these parts into new product designs. For new development, active production parts (ES1D-13-F, CSFA103-G, CURA103-G, ES1D-LTP, ESH1DHE3 variants) are preferred to ensure long-term supply continuity and manufacturer support.

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