ES1D Equivalent & Substitute Parts

Part Overview

The ES1D is a general-purpose rectifier diode manufactured by onsemi, rated for 200 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This part is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product portfolio. Identification of equivalent and substitute parts is necessary for applications requiring continued support, legacy system maintenance, or when the primary part becomes unavailable.

Substiute Parts

ES1D
onsemiIn Stock: 140477ES1D Datasheet
ES1D
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MURA120T3G
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S1D
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ES1D-E3/61T
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EGF1D-E3/5CA
Vishay General Semiconductor - Diodes DivisionIn Stock: 15349EGF1D-E3/5CA Datasheet
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EGF1D-E3/67A
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ES1D-LTP
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ES1D_R1_00001
Panjit International Inc.In Stock: 166225ES1D_R1_00001 Datasheet
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ESH1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 9509ESH1DHE3_A/H Datasheet
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ESH1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 7842ESH1DHE3_A/I Datasheet
ESH1DHE3_A/I
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FS1DE-TP
Micro Commercial CoIn Stock: 918FS1DE-TP Datasheet
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GF1D-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 9688GF1D-E3/67A Datasheet
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GF1D/1754
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GF1D/1754
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MURS1D-TP
Micro Commercial CoIn Stock: 1050MURS1D-TP Datasheet
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RGF1D-E3/5CA
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RS1D-M3/5AT
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RS1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1450RS1D-M3/61T Datasheet
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RS1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 7752RS1DHE3_A/H Datasheet
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RS1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 7271RS1DHE3_A/I Datasheet
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S1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1035S1D-M3/5AT Datasheet
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S1D-M3/61T
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S1DHE3_A/H
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S1DHE3_A/I
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STTH102A
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STTH1R02A
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STTH2R02A
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ES1D-13-F
Diodes IncorporatedIn Stock: 550426ES1D-13-F Datasheet
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ES1D-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 20111ES1D-E3/5AT Datasheet
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ES1D-M3/5AT
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ES1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 3252ES1D-M3/61T Datasheet
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ES1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 24818ES1DHE3_A/H Datasheet
ES1DHE3_A/H
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ES1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 20305ES1DHE3_A/I Datasheet
ES1DHE3_A/I
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ES1DHM3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1119ES1DHM3_A/H Datasheet
ES1DHM3_A/H
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ES1DHM3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1066ES1DHM3_A/I Datasheet
ES1DHM3_A/I
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ES1DV
Taiwan Semiconductor CorporationIn Stock: 15797ES1DV Datasheet
ES1DV
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ES1DVH
Taiwan Semiconductor CorporationIn Stock: 15805ES1DVH Datasheet
ES1DVH
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SES1D
SMC Diode SolutionsIn Stock: 9295SES1D Datasheet
SES1D
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U1D-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 8410U1D-E3/5AT Datasheet
U1D-E3/5AT
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U1D-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 34418U1D-E3/61T Datasheet
U1D-E3/61T
Parametric Equivalent
U1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 14293U1D-M3/5AT Datasheet
U1D-M3/5AT
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U1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1188U1D-M3/61T Datasheet
U1D-M3/61T
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 920 mV @ 1 A mV
Reverse Recovery Time (trr) 15 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Package / Case DO-214AC, SMA
Mounting Type Surface Mount
Operating Temperature - Junction -55°C ~ 150°C °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the ES1D is determined by strict equivalence in the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC (SMA) or compatible surface mount package
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Mounting Type: Surface Mount

Secondary Compatibility Factors:

  • Voltage - Forward (Vf) (Max) @ If: Within acceptable operating range
  • Reverse Recovery Time (trr): Performance characteristic
  • Current - Reverse Leakage @ Vr: Leakage specification
  • Operating Temperature - Junction: Application temperature range
  • RoHS and MSL Compliance: Regulatory and handling requirements

Substitute parts are grouped into two categories:

Direct Substitutes (Same Package DO-214AC/SMA): Parts meeting all primary criteria with identical or compatible package geometry, enabling direct PCB replacement without layout modification.

Functional Equivalents (Alternative Package DO-214BA/GF1): Parts meeting all electrical criteria but with different surface mount package geometry, requiring PCB layout adjustment but providing equivalent electrical performance.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 1A [mV] trr [ns] Ir @ 200V [µA] Package Product Status Temp Range [°C]
ES1D onsemi 200 1 920 15 5 DO-214AC (SMA) Not For New Designs -55 ~ 150
MURA120T3G onsemi 200 1 875 35 2 DO-214AC (SMA) Active -65 ~ 175
S1D YAGEO 200 1.1 DO-214AC Active
ES1D-E3/61T Vishay General Semiconductor - Diodes Division 200 1 920 25 5 DO-214AC (SMA) Active -55 ~ 150
EGF1D-E3/5CA Vishay General Semiconductor - Diodes Division 200 1 1000 50 5 DO-214BA (GF1) Active -65 ~ 175
EGF1D-E3/67A Vishay General Semiconductor - Diodes Division 200 1 1000 50 5 DO-214BA (GF1) Active -65 ~ 175
ES1D-LTP Micro Commercial Co 200 1 950 35 5 DO-214AC (SMA) Active -65 ~ 175
ES1D_R1_00001 Panjit International Inc. 200 1 950 35 1 DO-214AC (SMA) Active -55 ~ 150
ESH1DHE3_A/H Vishay General Semiconductor - Diodes Division 200 1 900 25 1 DO-214AC (SMA) Active -55 ~ 175
ESH1DHE3_A/I Vishay General Semiconductor - Diodes Division 200 1 900 25 1 DO-214AC (SMA) Active -55 ~ 175
FS1DE-TP Micro Commercial Co 200 1 1300 150 5 DO-214AC (SMA) Obsolete -50 ~ 150

Engineering Selection Recommendations

Direct Package Substitutes (DO-214AC/SMA):

The following parts provide direct electrical and mechanical compatibility with the ES1D and are suitable for PCB-level replacement without layout modification:

  • ES1D-E3/61T (Vishay General Semiconductor - Diodes Division): Active product status with identical electrical specifications to the ES1D. Reverse recovery time of 25 ns provides improved switching performance compared to the original 15 ns specification. Recommended for new applications requiring ES1D-equivalent performance.

  • MURA120T3G (onsemi): Active product from the original manufacturer. Forward voltage of 875 mV is lower than the ES1D specification, reducing power dissipation. Extended operating temperature range (-65°C ~ 175°C) supports broader application environments. Reverse recovery time of 35 ns is acceptable for standard rectification applications.

  • ES1D-LTP (Micro Commercial Co): Active product with DO-214AC (SMA) package compatibility. Forward voltage of 950 mV and reverse recovery time of 35 ns are within acceptable operating parameters. Extended temperature range (-65°C ~ 175°C) provides thermal margin.

  • ES1D_R1_00001 (Panjit International Inc.): Active product with identical package and electrical ratings. Reverse leakage current of 1 µA is superior to the ES1D specification of 5 µA, indicating lower leakage performance.

  • ESH1DHE3_A/H and ESH1DHE3_A/I (Vishay General Semiconductor - Diodes Division): Active automotive-grade products with AEC-Q101 qualification. Forward voltage of 900 mV and reverse recovery time of 25 ns provide performance equivalent to or better than the ES1D. Extended temperature range (-55°C ~ 175°C) and automotive qualification support mission-critical applications.

Functional Equivalents (DO-214BA/GF1 Package):

The following parts meet all electrical criteria but require PCB layout modification due to different package geometry:

  • EGF1D-E3/5CA and EGF1D-E3/67A (Vishay General Semiconductor - Diodes Division): Active SUPERECTIFIER® series products with 200 V / 1 A ratings. DO-214BA (GF1) package requires PCB footprint redesign. Forward voltage of 1000 mV and reverse recovery time of 50 ns are acceptable for general-purpose rectification. Extended temperature range (-65°C ~ 175°C) supports demanding environments.

Parts Not Recommended:

  • FS1DE-TP (Micro Commercial Co): Obsolete product status. Forward voltage of 1.3 V and reverse recovery time of 150 ns indicate inferior performance characteristics compared to the ES1D and active alternatives.

Compliance Verification:

All recommended substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing and handling processes.

Frequently Asked Questions (FAQ)

Q: Can ES1D-E3/61T be used as a direct replacement for ES1D?

A: Yes. ES1D-E3/61T is manufactured by Vishay General Semiconductor - Diodes Division and meets all electrical specifications of the ES1D. Both parts are rated for 200 V reverse voltage, 1 A average rectified current, and use the DO-214AC (SMA) surface mount package. The part is Active status, making it suitable for new designs and legacy system support. No PCB layout modification is required.

Q: What is the difference between DO-214AC (SMA) and DO-214BA (GF1) packages?

A: DO-214AC (SMA) and DO-214BA (GF1) are distinct surface mount package geometries with different footprint dimensions. Parts specified for DO-214AC (SMA), such as the ES1D, cannot be directly substituted with DO-214BA (GF1) parts without PCB layout redesign. The EGF1D series uses DO-214BA (GF1) package and requires new PCB footprint design.

Q: Why does MURA120T3G have lower forward voltage than ES1D?

A: Forward voltage variation is a normal characteristic of diode manufacturing and design. MURA120T3G specifies 875 mV at 1 A compared to ES1D at 920 mV at 1 A. Lower forward voltage reduces power dissipation in the diode during operation, which can improve overall circuit efficiency. Both values are within acceptable operating parameters for 200 V / 1 A rectifier applications.

Q: Are automotive-grade parts like ESH1DHE3_A/H suitable for non-automotive applications?

A: Yes. Automotive-grade parts with AEC-Q101 qualification meet or exceed standard industrial specifications. ESH1DHE3_A/H and ESH1DHE3_A/I can be used in any application requiring 200 V / 1 A rectification. The automotive qualification indicates enhanced reliability testing and stricter manufacturing controls, making these parts suitable for mission-critical applications across all industries.

Q: What does "Not For New Designs" status mean for the ES1D?

A: "Not For New Designs" indicates that onsemi has superseded the ES1D in its product portfolio. While existing inventory may be available, the manufacturer recommends using alternative parts for new circuit designs. Active substitute parts such as MURA120T3G, ES1D-E3/61T, or ES1D-LTP are recommended for new applications.

Q: Can reverse recovery time differences affect circuit performance?

A: Yes. Reverse recovery time (trr) affects switching speed and electromagnetic interference (EMI) characteristics. The ES1D specifies 15 ns, while substitutes range from 25 ns to 150 ns. For standard rectification applications, differences within 50 ns are generally acceptable. Applications requiring minimal EMI or high-frequency switching should prioritize parts with lower trr values, such as ES1D-E3/61T (25 ns) or ESH1DHE3_A/H (25 ns).

Q: Is reverse leakage current important for my application?

A: Reverse leakage current becomes significant in high-impedance circuits or applications with extended reverse voltage exposure. The ES1D specifies 5 µA at 200 V. Substitutes with lower leakage, such as ES1D_R1_00001 (1 µA) or ESH1DHE3_A/H (1 µA), provide superior performance in sensitive analog circuits. For standard power rectification, the difference is typically negligible.

Q: What is the significance of extended temperature range in substitute parts?

A: Extended operating temperature ranges, such as -65°C ~ 175°C offered by MURA120T3G and EGF1D series, provide thermal margin for applications operating in extreme environments. The ES1D specifies -55°C ~ 150°C. If your application operates near these limits, selecting a substitute with extended range reduces thermal stress and improves long-term reliability.

Q: Why is S1D listed as a substitute if specifications are incomplete?

A: S1D by YAGEO is listed as an available substitute based on matching primary electrical criteria: 200 V reverse voltage, 1 A (1.1 A rated) average rectified current, and DO-214AC package. However, incomplete specification data limits detailed performance comparison. Verification with the manufacturer datasheet is necessary before selection for critical applications.

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