ES1C-M3/5AT Equivalent & Substitute Parts

Part Overview

The ES1C-M3/5AT is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This surface mount component operates at 150 V DC reverse voltage with 1 A average rectified current in a DO-214AC (SMA) package. The part is Active in product status and ROHS3 compliant. Equivalent and substitute parts are identified to support procurement flexibility, inventory management, and design continuity when the primary part number becomes unavailable or when alternative sourcing is required.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	150	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	920	mV @ 1 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	-
Reverse Recovery Time (trr)	25	ns
Current - Reverse Leakage @ Vr	5	µA @ 150 V
Capacitance @ Vr, F	10	pF @ 4V, 1MHz
Mounting Type	Surface Mount	-
Package / Case	DO-214AC, SMA	-
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution of the ES1C-M3/5AT is determined by electrical and mechanical parameter compatibility. The critical parameters that define substitutability are:

Voltage Rating: 150 V DC reverse voltage (Vr)
Current Rating: 1 A average rectified current (Io)
Package Type: DO-214AC (SMA) surface mount
Speed Classification: Fast Recovery ≤ 500ns, > 200mA
Forward Voltage: Maximum 920 mV @ 1 A (with tolerance for minor variations)
Reverse Recovery Time: 25 ns nominal
Reverse Leakage Current: 5 µA @ 150 V
Compliance: ROHS3 Compliant, MSL 1

Substitute parts are grouped into two categories:

Parametric Equivalents: Parts that match all critical electrical parameters and package specifications. These include ES1C-E3/5AT, ES1C-E3/61T, ES1CHE3_A/H, ES1C-13-F, and ES1C (Taiwan Semiconductor Corporation variant). These parts differ only in packaging format (Tape & Reel variants, Cut Tape & Digi-Reel®) or minor manufacturing designations.

Manufacturer Recommended Alternatives: Parts that meet the core voltage, current, and package requirements but may exhibit variations in secondary parameters such as forward voltage, reverse recovery time, or reverse leakage current. These include ESH1C (Taiwan Semiconductor Corporation) and SBR1U150SA-13 (Diodes Incorporated). These alternatives are suitable when the primary part is unavailable and the application tolerates the specified parameter variations.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ 1A [mV]	trr [ns]	Ir @ 150V [µA]	Capacitance @ 4V [pF]	Tj (Max) [°C]	Package	Technology
ES1C-M3/5AT	Vishay	150	1	920	25	5	10	150	DO-214AC (SMA)	Standard
ES1C-E3/5AT	Vishay	150	1	920	25	5	10	150	DO-214AC (SMA)	Standard
ES1C-E3/61T	Vishay	150	1	920	25	5	10	150	DO-214AC (SMA)	Standard
ES1CHE3_A/H	Vishay	150	1	920	25	5	10	150	DO-214AC (SMA)	Standard
ES1C-13-F	Diodes Incorporated	150	1	920	25	5	10	150	DO-214AC (SMA)	Standard
ES1C	Taiwan Semiconductor	150	1	950	35	5	16	150	DO-214AC (SMA)	Standard
ESH1C	Taiwan Semiconductor	150	1	950	15	1	16	175	DO-214AC (SMA)	Standard
SBR1U150SA-13	Diodes Incorporated	150	1	700	≤500	100	-	150	DO-214AC (SMA)	Super Barrier

Engineering Selection Recommendations

Direct Parametric Equivalents: ES1C-E3/5AT, ES1C-E3/61T, ES1CHE3_A/H, and ES1C-13-F are direct electrical and mechanical equivalents to the ES1C-M3/5AT. These parts share identical voltage ratings, current ratings, forward voltage characteristics, reverse recovery time, and reverse leakage specifications. Selection among these equivalents is based on packaging format availability (Tape & Reel vs. Cut Tape & Digi-Reel®) and inventory status. ES1CHE3_A/H includes AEC-Q101 automotive qualification, suitable for applications requiring automotive-grade components.

Alternative with Enhanced Performance: ESH1C (Taiwan Semiconductor Corporation) meets the core voltage and current requirements with improved reverse recovery time (15 ns vs. 25 ns) and lower reverse leakage current (1 µA vs. 5 µA). This part operates at a higher maximum junction temperature (175°C vs. 150°C). Forward voltage is slightly elevated at 950 mV. This alternative is suitable for applications where faster switching or lower leakage is beneficial and the forward voltage increase is acceptable.

Super Barrier Technology Alternative: SBR1U150SA-13 (Diodes Incorporated) employs Super Barrier technology and delivers significantly lower forward voltage (700 mV vs. 920 mV), reducing power dissipation. However, reverse leakage current is substantially higher (100 µA vs. 5 µA). This part includes AEC-Q101 automotive qualification. Selection of this alternative is appropriate when forward voltage reduction and power efficiency are prioritized and the higher reverse leakage is acceptable for the application.

Taiwan Semiconductor Variant: ES1C (Taiwan Semiconductor Corporation) is a parametric equivalent with slightly higher forward voltage (950 mV) and reverse recovery time (35 ns). This part is suitable as a secondary alternative when Vishay or Diodes Incorporated sources are unavailable.

All substitute parts maintain ROHS3 compliance, MSL 1 rating, and surface mount DO-214AC (SMA) package compatibility with the primary part.

Frequently Asked Questions (FAQ)

Q: Can ES1C-E3/5AT be used as a direct replacement for ES1C-M3/5AT?

A: Yes. ES1C-E3/5AT is a parametric equivalent with identical electrical specifications (150 V, 1 A, 920 mV forward voltage, 25 ns reverse recovery time, 5 µA reverse leakage). The difference is packaging format (Cut Tape & Digi-Reel® vs. Tape & Reel). Both are ROHS3 compliant and operate within -55°C to 150°C junction temperature range.

Q: What is the difference between ES1CHE3_A/H and the standard ES1C-M3/5AT?

A: ES1CHE3_A/H is electrically identical to ES1C-M3/5AT but includes AEC-Q101 automotive qualification. This certification is required for automotive applications. All other electrical and mechanical parameters are equivalent.

Q: When should SBR1U150SA-13 be selected instead of ES1C-M3/5AT?

A: SBR1U150SA-13 should be selected when forward voltage reduction is critical for power efficiency. This part delivers 700 mV forward voltage compared to 920 mV, reducing power dissipation by approximately 24%. However, reverse leakage current is 100 µA versus 5 µA. This trade-off is acceptable in applications where leakage current is not a limiting factor and power efficiency is prioritized.

Q: Are all substitute parts available in the same DO-214AC (SMA) package?

A: Yes. All listed substitute parts are packaged in DO-214AC (SMA) surface mount format, ensuring mechanical and footprint compatibility with the ES1C-M3/5AT.

Q: What is the difference between parametric equivalents and manufacturer recommended alternatives?

A: Parametric equivalents (ES1C-E3/5AT, ES1C-E3/61T, ES1CHE3_A/H, ES1C-13-F) match all critical electrical specifications of the primary part. Manufacturer recommended alternatives (ESH1C, SBR1U150SA-13) meet core voltage and current requirements but exhibit variations in secondary parameters such as forward voltage, reverse recovery time, or reverse leakage current. Parametric equivalents are preferred for direct substitution; alternatives are selected when specific performance improvements or trade-offs align with application requirements.

Q: Is ESH1C suitable for high-temperature applications?

A: ESH1C operates at a maximum junction temperature of 175°C, compared to 150°C for ES1C-M3/5AT. This 25°C advantage makes ESH1C suitable for applications with elevated ambient or junction temperature requirements. All other electrical parameters must be evaluated for application compatibility.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating. SBR1U150SA-13 and ES1CHE3_A/H include AEC-Q101 automotive qualification. REACH status is unaffected for all parts.

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