ES1C M2G Equivalent & Substitute Parts Reference

Part Overview

The ES1C M2G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 150 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This part is classified as discontinued at DiGi Electronics, necessitating identification of active equivalent and substitute components for ongoing design support and procurement.

The ES1C M2G operates across a junction temperature range of -55°C to 150°C and features fast recovery characteristics with a reverse recovery time of 35 nanoseconds. RoHS3 compliance and unlimited moisture sensitivity level (MSL 1) support standard manufacturing environments.

Substiute Parts

ES1C M2G
Taiwan Semiconductor CorporationIn Stock: 704ES1C M2G Datasheet
ES1C M2G
Current Part
ES1C
Taiwan Semiconductor CorporationIn Stock: 26853ES1C Datasheet
ES1C
Parametric Equivalent
ES1CH
Taiwan Semiconductor CorporationIn Stock: 1033ES1CH Datasheet
ES1CH
Parametric Equivalent
ES1C-13-F
Diodes IncorporatedIn Stock: 10390ES1C-13-F Datasheet
ES1C-13-F
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ES1C-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 6358ES1C-E3/5AT Datasheet
ES1C-E3/5AT
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ES1C-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 48345ES1C-E3/61T Datasheet
ES1C-E3/61T
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ES1C-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1079ES1C-M3/5AT Datasheet
ES1C-M3/5AT
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ES1C-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 14816ES1C-M3/61T Datasheet
ES1C-M3/61T
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ES1CHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 47563ES1CHE3_A/H Datasheet
ES1CHE3_A/H
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ES1CHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 808ES1CHE3_A/I Datasheet
ES1CHE3_A/I
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ESH1C-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 10405ESH1C-E3/5AT Datasheet
ESH1C-E3/5AT
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ESH1C-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 15747ESH1C-E3/61T Datasheet
ESH1C-E3/61T
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SBR1U150SA-13
Diodes IncorporatedIn Stock: 67863SBR1U150SA-13 Datasheet
SBR1U150SA-13
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SBR1U150SAQ-13
Diodes IncorporatedIn Stock: 3875SBR1U150SAQ-13 Datasheet
SBR1U150SAQ-13
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SBR2U150SA-13
Diodes IncorporatedIn Stock: 30378SBR2U150SA-13 Datasheet
SBR2U150SA-13
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UH1CHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1126UH1CHE3_A/H Datasheet
UH1CHE3_A/H
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UH1CHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1069UH1CHE3_A/I Datasheet
UH1CHE3_A/I
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ES1C_R1_00001
Panjit International Inc.In Stock: 5773ES1C_R1_00001 Datasheet
ES1C_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) Maximum 150 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) Maximum @ 1 A 950 mV
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ 150 V 5 µA
Capacitance @ 1 V, 1 MHz 16 pF
Operating Temperature - Junction -55 to 150 °C
Package / Case DO-214AC, SMA
Mounting Type Surface Mount
Technology Standard
Speed Classification Fast Recovery ≤ 500ns, > 200mA

Substitute Part Grouping Explanation

Substitution of the ES1C M2G is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

  • Voltage - DC Reverse (Vr) Maximum: 150 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC, SMA
  • Mounting Type: Surface Mount
  • Technology: Standard
  • Speed Classification: Fast Recovery

Grouping Logic:

Group 1 - Parametric Equivalents (Taiwan Semiconductor Corporation): Parts ES1C and ES1CH maintain identical electrical specifications to the ES1C M2G across all critical parameters. These components are direct functional replacements with active product status. ES1CH includes automotive-grade qualification (AEC-Q101), suitable for applications requiring automotive compliance.

Group 2 - Similar Substitutes (Diodes Incorporated & Vishay General Semiconductor): Parts ES1C-13-F, ES1C-E3/5AT, ES1C-E3/61T, ES1C-M3/5AT, ES1C-M3/61T, ES1CHE3_A/H, ES1CHE3_A/I, and ESH1C-E3/5AT share the same voltage, current, and package specifications. These parts exhibit minor variations in forward voltage (920 mV vs. 950 mV), reverse recovery time (25 ns vs. 35 ns), and reverse leakage current (1 µA to 5 µA). Automotive-qualified variants (ES1CHE3_A/H, ES1CHE3_A/I) include AEC-Q101 certification. ESH1C-E3/5AT extends the operating temperature range to 175°C and reduces reverse leakage to 1 µA.

All substitute parts maintain DO-214AC (SMA) packaging and surface mount configuration, ensuring mechanical and thermal compatibility with the original design footprint.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) V Io (A) Vf (Max) @ 1A (mV) trr (ns) Ir @ 150V (µA) Tj Range (°C) Product Status Automotive Grade
ES1C M2G Taiwan Semiconductor 150 1 950 35 5 -55 to 150 Discontinued No
ES1C Taiwan Semiconductor 150 1 950 35 5 -55 to 150 Active No
ES1CH Taiwan Semiconductor 150 1 950 35 5 -55 to 150 Active Yes (AEC-Q101)
ES1C-13-F Diodes Incorporated 150 1 920 25 5 -55 to 150 Active No
ES1C-E3/5AT Vishay General Semiconductor 150 1 920 25 5 -55 to 150 Active No
ES1C-E3/61T Vishay General Semiconductor 150 1 920 25 5 -55 to 150 Active No
ES1C-M3/5AT Vishay General Semiconductor 150 1 920 25 5 -55 to 150 Active No
ES1C-M3/61T Vishay General Semiconductor 150 1 920 25 5 -55 to 150 Active No
ES1CHE3_A/H Vishay General Semiconductor 150 1 920 25 5 -55 to 150 Active Yes (AEC-Q101)
ES1CHE3_A/I Vishay General Semiconductor 150 1 920 25 5 -55 to 150 Active Yes (AEC-Q101)
ESH1C-E3/5AT Vishay General Semiconductor 150 1 900 25 1 -55 to 175 Active No

Engineering Selection Recommendations

Primary Recommendation - Direct Replacement: ES1C (Taiwan Semiconductor Corporation) is the direct parametric equivalent with identical electrical characteristics and active product status. This part provides seamless substitution for the discontinued ES1C M2G without design modification.

Automotive Applications: ES1CH (Taiwan Semiconductor Corporation) or ES1CHE3_A/H (Vishay General Semiconductor) are specified for automotive environments, both carrying AEC-Q101 qualification. These parts maintain the same voltage and current ratings as the original part while providing automotive-grade reliability assurance.

Enhanced Performance Characteristics: ES1C-13-F (Diodes Incorporated), ES1C-E3/61T (Vishay), ES1C-M3/61T (Vishay), ES1CHE3_A/H, and ES1CHE3_A/I offer reduced reverse recovery time (25 ns vs. 35 ns) and lower forward voltage (920 mV vs. 950 mV), resulting in improved switching performance and reduced power dissipation. These parts are suitable for applications where faster switching and lower heat generation are beneficial.

Extended Temperature Range: ESH1C-E3/5AT (Vishay General Semiconductor) extends the maximum junction temperature to 175°C and reduces reverse leakage current to 1 µA, suitable for high-temperature applications or designs requiring lower leakage specifications.

Compliance & Regulatory: All substitute parts maintain RoHS3 compliance, unlimited MSL rating, and REACH unaffected status, matching the regulatory profile of the original ES1C M2G.

Frequently Asked Questions (FAQ)

Q1: Can ES1C be used as a direct replacement for ES1C M2G?

A: Yes. ES1C is a parametric equivalent with identical voltage (150 V), current (1 A), forward voltage (950 mV @ 1 A), reverse recovery time (35 ns), and reverse leakage current (5 µA @ 150 V) specifications. Both use DO-214AC (SMA) surface mount packaging. ES1C is active in production, whereas ES1C M2G is discontinued.

Q2: What is the difference between ES1C and ES1CH?

A: Both parts share identical electrical specifications. ES1CH includes automotive-grade qualification (AEC-Q101), making it suitable for automotive applications requiring formal qualification documentation. Standard industrial applications can use either part.

Q3: Why do some substitute parts show 920 mV forward voltage instead of 950 mV?

A: Forward voltage variation within the 150 V / 1 A rectifier diode category is a normal manufacturing characteristic. The 920 mV specification (Diodes Incorporated and Vishay parts) represents improved performance with lower power dissipation compared to the 950 mV specification. Both values are within acceptable operating ranges for general-purpose rectification circuits.

Q4: What is the significance of reverse recovery time differences (25 ns vs. 35 ns)?

A: Reverse recovery time (trr) determines switching speed. Parts with 25 ns trr (Diodes Incorporated and Vishay variants) switch faster than the original 35 ns specification, reducing switching losses and heat generation. This is beneficial in high-frequency applications but not critical for standard rectification circuits.

Q5: Can ESH1C-E3/5AT be used in place of ES1C M2G?

A: Yes, with design considerations. ESH1C-E3/5AT maintains the same 150 V / 1 A ratings and DO-214AC packaging. It offers advantages: extended temperature range (-55°C to 175°C vs. -55°C to 150°C) and reduced reverse leakage (1 µA vs. 5 µA). Forward voltage is 900 mV, lower than the original 950 mV. Use this part when higher temperature operation or lower leakage is required.

Q6: Are all substitute parts available in the same packaging?

A: Yes. All listed substitute parts use DO-214AC (SMA) surface mount packaging, ensuring mechanical and thermal compatibility with the original ES1C M2G footprint. Packaging variants (Tape & Reel, Cut Tape) differ only in supply format, not component specifications.

Q7: Which substitute part should be selected for automotive applications?

A: ES1CH or ES1CHE3_A/H (both AEC-Q101 qualified) are specified for automotive use. ES1CHE3_A/I provides an alternative automotive-qualified option. These parts carry formal automotive qualification documentation required for automotive supply chains.

Q8: Do all substitute parts meet RoHS3 compliance?

A: Yes. All listed substitute parts are RoHS3 compliant and REACH unaffected, matching the regulatory compliance of the original ES1C M2G.

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