ES1CHR3G Equivalent & Substitute Parts

Part Overview

The ES1CHR3G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 150 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This part is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

The ES1CHR3G features fast recovery characteristics with a reverse recovery time of 35 nanoseconds, automotive-grade qualification per AEC-Q101, and operates across a junction temperature range of -55°C to 150°C. ROHS3 compliance and unlimited moisture sensitivity level (MSL 1) support broad application deployment.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	150	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 1 A	mV
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	5	µA @ 150 V
Capacitance @ Vr, F	16	pF @ 4V, 1MHz
Package / Case	DO-214AC, SMA	—
Operating Temperature - Junction	-55 to 150	°C
Grade	Automotive	—
Qualification	AEC-Q101	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the ES1CHR3G is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): 150 V minimum
Current - Average Rectified (Io): 1 A minimum
Package / Case: DO-214AC or SMA compatible
Mounting Type: Surface Mount
Operating Temperature Range: Must encompass -55°C to 150°C minimum

Secondary Compatibility Factors:

Forward voltage (Vf) at rated current
Reverse recovery time (trr)
Reverse leakage current
Capacitance characteristics
Compliance certifications (ROHS3, AEC-Q101 for automotive applications)

Parts are grouped into three categories:

Parametric Equivalents: Identical electrical specifications and automotive qualification, manufactured by Taiwan Semiconductor Corporation or equivalent suppliers.

Similar Parts: Meet or exceed primary substitution criteria with minor variations in secondary parameters (forward voltage, recovery time, leakage current) or different semiconductor technology (Super Barrier vs. Standard).

Functional Alternatives: Higher current ratings or extended temperature ranges that provide design margin while maintaining voltage and package compatibility.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [mV]	trr [ns]	Ir @ Vr [µA]	Package	Grade	Product Status
ES1CHR3G	Taiwan Semiconductor	150	1	950 @ 1A	35	5 @ 150V	DO-214AC (SMA)	Automotive	Discontinued
ES1C	Taiwan Semiconductor	150	1	950 @ 1A	35	5 @ 150V	DO-214AC (SMA)	Standard	Active
ES1CH	Taiwan Semiconductor	150	1	950 @ 1A	35	5 @ 150V	DO-214AC (SMA)	Automotive	Active
ES1C-13-F	Diodes Incorporated	150	1	920 @ 1A	25	5 @ 150V	DO-214AC (SMA)	Standard	Active
SBR1U150SA-13	Diodes Incorporated	150	1	700 @ 1A	≤500	100 @ 150V	DO-214AC (SMA)	Automotive	Active
SBR1U150SAQ-13	Diodes Incorporated	150	1	700 @ 1A	>500	100 @ 150V	DO-214AC (SMA)	Automotive	Active
SBR2U150SA-13	Diodes Incorporated	150	2	800 @ 2A	>500	75 @ 150V	DO-214AC (SMA)	Standard	Active
UH1CHE3_A/H	Vishay General Semiconductor	150	1	1050 @ 1A	25	1 @ 150V	DO-214AC (SMA)	Automotive	Obsolete
UH1CHE3_A/I	Vishay General Semiconductor	150	1	1050 @ 1A	25	1 @ 150V	DO-214AC (SMA)	Automotive	Obsolete
ES1C_R1_00001	Panjit International Inc.	150	1	950 @ 1A	35	1 @ 150V	DO-214AC (SMA)	Standard	Active

Engineering Selection Recommendations

First Priority - Parametric Equivalents:

ES1CH (Taiwan Semiconductor Corporation) is the primary recommended substitute. This part maintains identical electrical specifications to the ES1CHR3G across all critical parameters: 150 V reverse voltage, 1 A average rectified current, 950 mV forward voltage at 1 A, and 35 ns reverse recovery time. ES1CH carries automotive-grade qualification per AEC-Q101 and is currently in active production status with 983 units in stock. The part is ROHS3 compliant with unlimited moisture sensitivity level.

ES1C (Taiwan Semiconductor Corporation) provides parametric equivalence with identical electrical performance. This part is in active production with significantly higher inventory (26,800 units). ES1C lacks automotive-grade designation but maintains all electrical specifications and compliance certifications. Selection of ES1C is appropriate for non-automotive applications or where automotive qualification is not contractually required.

ES1C_R1_00001 (Panjit International Inc.) offers parametric equivalence manufactured by an alternative supplier. Electrical specifications match the ES1CHR3G across voltage, current, and recovery time parameters. Reverse leakage current is reduced to 1 µA at 150 V, providing improved performance margin. This part is in active production with 5,693 units available.

Secondary Priority - Similar Parts with Performance Advantages:

ES1C-13-F (Diodes Incorporated) meets all primary substitution criteria with improved reverse recovery time of 25 ns (versus 35 ns) and slightly reduced forward voltage of 920 mV at 1 A. This part is packaged in Tape & Reel format with 10,300 units in stock and active production status.

SBR1U150SA-13 (Diodes Incorporated) employs Super Barrier technology, delivering significantly reduced forward voltage of 700 mV at 1 A compared to 950 mV for the ES1CHR3G. This represents a 26% reduction in forward voltage drop, reducing power dissipation in rectification circuits. The part maintains 150 V reverse voltage and 1 A current rating with automotive-grade qualification per AEC-Q101. Reverse leakage current is elevated to 100 µA at 150 V. SBR1U150SA-13 is in active production with 67,818 units available.

Tertiary Priority - Functional Alternatives:

SBR2U150SA-13 (Diodes Incorporated) provides a 2 A current rating in the same DO-214AC package, offering design margin for applications approaching 1 A operation. Forward voltage is 800 mV at 2 A. This part is in active production with 30,300 units in stock.

Not Recommended:

UH1CHE3_A/H and UH1CHE3_A/I (Vishay General Semiconductor) are classified as obsolete. Although these parts meet electrical specifications, their discontinued status creates long-term supply risk. Forward voltage is elevated to 1.05 V at 1 A, increasing power dissipation by 10% compared to the ES1CHR3G.

SBR1U150SAQ-13 exhibits standard recovery characteristics (>500 ns) versus fast recovery (≤500 ns) specified for the ES1CHR3G, making it unsuitable for applications requiring fast switching performance.

Frequently Asked Questions (FAQ)

Q: Can ES1C be used as a direct replacement for ES1CHR3G in automotive applications?

A: ES1C provides identical electrical specifications but lacks automotive-grade designation. For applications requiring AEC-Q101 qualification, ES1CH is the appropriate substitute. ES1C is suitable for non-automotive or non-regulated applications.

Q: What is the primary advantage of SBR1U150SA-13 over ES1CHR3G?

A: SBR1U150SA-13 employs Super Barrier technology, reducing forward voltage from 950 mV to 700 mV at 1 A. This 26% reduction decreases power dissipation and heat generation in rectification circuits. Both parts maintain 150 V reverse voltage and 1 A current rating with automotive qualification.

Q: Are there any electrical parameter differences between ES1CHR3G and ES1CH?

A: No. ES1CH and ES1CHR3G are electrically identical across all specified parameters: 150 V reverse voltage, 1 A average rectified current, 950 mV forward voltage at 1 A, 35 ns reverse recovery time, and 5 µA reverse leakage current at 150 V. Both are automotive-grade with AEC-Q101 qualification.

Q: Can SBR2U150SA-13 be used in place of ES1CHR3G?

A: SBR2U150SA-13 meets the voltage and package requirements but is rated for 2 A average rectified current versus 1 A for the ES1CHR3G. This part is suitable for applications where higher current capacity provides design margin. The 150 V reverse voltage rating is identical. Forward voltage is 800 mV at 2 A.

Q: What is the difference between ES1C_R1_00001 and ES1CHR3G?

A: ES1C_R1_00001 is manufactured by Panjit International Inc. versus Taiwan Semiconductor Corporation for the ES1CHR3G. Electrical specifications are identical except reverse leakage current is reduced to 1 µA at 150 V (versus 5 µA). Both parts are rated 150 V, 1 A with 950 mV forward voltage and 35 ns recovery time. ES1C_R1_00001 is packaged in Tape & Reel format.

Q: Why is ES1C-13-F classified as a similar part rather than a parametric equivalent?

A: ES1C-13-F is manufactured by Diodes Incorporated versus Taiwan Semiconductor Corporation. Reverse recovery time is improved to 25 ns (versus 35 ns), and forward voltage is reduced to 920 mV at 1 A (versus 950 mV). These secondary parameter variations, while beneficial, distinguish it from strict parametric equivalence. All primary substitution criteria are met.

Q: Are the Vishay UH1CHE3 parts suitable for new designs?

A: UH1CHE3_A/H and UH1CHE3_A/I are classified as obsolete. Although they meet electrical specifications, their discontinued status creates procurement risk for ongoing production. Active alternatives such as ES1CH, ES1C, or SBR1U150SA-13 are recommended for new designs.

Q: What packaging formats are available for substitute parts?

A: Substitute parts are available in multiple packaging formats: Cut Tape (CT) & Digi-Reel®, Tape & Reel (TR), and standard packaging. ES1CH and ES1C are available in standard surface mount packaging. ES1C-13-F and SBR1U150SA-13 are available in Tape & Reel and Cut Tape formats suitable for automated assembly. All parts use the DO-214AC (SMA) package footprint.

Q: Do all substitute parts meet ROHS3 compliance?

A: Yes. All substitute parts listed are ROHS3 compliant. All parts maintain unlimited moisture sensitivity level (MSL 1), supporting storage and handling without desiccant requirements.

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