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ES1C-HF Equivalent & Substitute Parts
Part Overview
The ES1C-HF is a general-purpose rectifier diode manufactured by Comchip Technology, rated for 200 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This fast recovery diode with 35 ns reverse recovery time is designed for standard rectification applications requiring compact form factors and reliable performance across industrial temperature ranges.
The ES1C-HF is classified as an active product with ROHS3 compliance and unlimited moisture sensitivity rating. Equivalent and substitute parts become necessary when the primary part experiences supply constraints, inventory limitations, or when design flexibility across multiple manufacturers is required for production optimization.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) Maximum | 200 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) Maximum @ If | 1 | V @ 1 A |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA | — |
| Reverse Recovery Time (trr) | 35 | ns |
| Current - Reverse Leakage @ Vr | 5 | µA @ 150 V |
| Capacitance @ Vr, F | 15 | pF @ 4V, 1MHz |
| Package / Case | DO-214AC, SMA | — |
| Mounting Type | Surface Mount | — |
| Operating Temperature - Junction | -55 to 150 | °C |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the ES1C-HF is determined by strict equivalence across the following critical parameters:
Primary Equivalence Criteria:
- Voltage - DC Reverse (Vr) Maximum: 200 V
- Current - Average Rectified (Io): 1 A
- Voltage - Forward (Vf) Maximum @ If: 1 V @ 1 A
- Package / Case: DO-214AC, SMA
- Mounting Type: Surface Mount
- Operating Temperature - Junction: -55°C to 150°C
- Technology: Standard
- RoHS Status: ROHS3 Compliant
Secondary Equivalence Parameters:
- Speed Classification: Fast Recovery ≤ 500ns, > 200mA
- Reverse Recovery Time (trr): 35 ns or 50 ns (acceptable variance)
- Current - Reverse Leakage @ Vr: 5 µA to 10 µA @ 150 V to 200 V
- Capacitance @ Vr, F: 15 pF to 20 pF @ 4V, 1MHz
All substitute parts listed maintain the core electrical specifications required for direct functional replacement. Variations in reverse recovery time (35 ns versus 50 ns) and reverse leakage current (5 µA versus 10 µA) remain within acceptable operating margins for general-purpose rectification applications.
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) V | Io (A) | Vf (Max) @ If (V) | trr (ns) | Ir @ Vr (µA) | C @ Vr (pF) | Package | Status |
|---|---|---|---|---|---|---|---|---|---|
| ES1C-HF | Comchip Technology | 200 | 1 | 1 @ 1A | 35 | 5 @ 150V | 15 @ 4V | DO-214AC | Active |
| ES1D-HF | Comchip Technology | 200 | 1 | 1 @ 1A | 35 | 5 @ 200V | 15 @ 4V | DO-214AC | Active |
| ES1D | EVVO Semi | 200 | 1 | 1 @ 1A | 35 | 5 @ 200V | 15 @ 4V | DO-214AC | Active |
| HS1D | SURGE | 200 | 1 | 1 @ 1A | 50 | 5 @ 200V | 20 @ 4V | DO-214AC | Active |
| HS1D R3G | Taiwan Semiconductor Corporation | 200 | 1 | 1 @ 1A | 50 | 5 @ 200V | 15 @ 4V | DO-214AC | Discontinued at DiGi Electronics |
| US1D | SMC Diode Solutions | 200 | 1 | 1 @ 1A | — | — | — | DO-214AC | Active |
| US1D R3G | Taiwan Semiconductor Corporation | 200 | 1 | 1 @ 1A | 50 | 5 @ 200V | 15 @ 4V | DO-214AC | Discontinued at DiGi Electronics |
| US1D-E3/5AT | Vishay General Semiconductor - Diodes Division | 200 | 1 | 1 @ 1A | 50 | 10 @ 200V | 15 @ 4V | DO-214AC | Active |
| US1D-E3/61T | Vishay General Semiconductor - Diodes Division | 200 | 1 | 1 @ 1A | 50 | 10 @ 200V | 15 @ 4V | DO-214AC | Active |
| US1DH | Taiwan Semiconductor Corporation | 200 | 1 | 1 @ 1A | 50 | 5 @ 200V | 15 @ 4V | DO-214AC | Active |
| US1DHE3_A/H | Vishay General Semiconductor - Diodes Division | 200 | 1 | 1 @ 1A | 50 | 10 @ 200V | 15 @ 4V | DO-214AC | Active |
Engineering Selection Recommendations
Tier 1 - Direct Equivalents (Preferred for Drop-In Replacement):
ES1D-HF and ES1D from EVVO Semi are the closest functional equivalents to the ES1C-HF. Both maintain the 35 ns reverse recovery time specification and identical electrical characteristics. ES1D-HF is available in Tape & Reel packaging matching the original specification, while ES1D is available in Cut Tape and Digi-Reel formats. Both are active products with ROHS3 compliance.
Tier 2 - Acceptable Substitutes (50 ns Reverse Recovery Time):
HS1D, HS1D R3G, US1D R3G, US1D-E3/5AT, US1D-E3/61T, US1DH, and US1DHE3_A/H all meet the core electrical requirements with a 50 ns reverse recovery time specification. This represents a 15 ns increase from the ES1C-HF baseline but remains within fast recovery diode classification. These parts are suitable for applications where the extended recovery time does not impact circuit performance.
US1D-E3/5AT, US1D-E3/61T, and US1DHE3_A/H specify 10 µA reverse leakage current at 200 V, compared to 5 µA in the ES1C-HF. This doubling of leakage current remains acceptable for general-purpose rectification but should be evaluated in applications with stringent leakage requirements.
US1DH and US1DHE3_A/H carry AEC-Q101 automotive qualification, making them suitable for automotive-grade applications requiring enhanced reliability documentation.
Tier 3 - Limited Availability:
HS1D R3G and US1D R3G are discontinued at DiGi Electronics and should be considered only when existing inventory is available and long-term supply is not required.
Packaging Considerations:
The ES1C-HF is supplied in Tape & Reel (TR) format. Equivalent parts are available in multiple packaging formats: Tape & Reel (ES1D-HF, US1D R3G, US1DHE3_A/H), Cut Tape (ES1D, US1D-E3/61T, HS1D R3G), and Bag (HS1D). Selection should account for assembly line requirements and minimum order quantities.
Frequently Asked Questions (FAQ)
Q: Can ES1D-HF be used as a direct replacement for ES1C-HF?
A: Yes. ES1D-HF is a parametric equivalent with identical voltage, current, forward voltage, and reverse recovery time specifications. Both are manufactured by Comchip Technology in DO-214AC packaging with ROHS3 compliance. The primary difference is the reverse leakage measurement point (200 V versus 150 V), which does not affect functional compatibility.
Q: What is the significance of the 35 ns versus 50 ns reverse recovery time difference?
A: The ES1C-HF specifies 35 ns reverse recovery time, while most substitute parts specify 50 ns. Both classifications fall within the fast recovery diode category (≤ 500 ns). The 15 ns difference affects switching speed in high-frequency applications. For standard rectification at line frequencies (50/60 Hz) or moderate switching frequencies, this difference is not functionally significant. Applications operating above 100 kHz should evaluate the impact on circuit performance.
Q: Are US1D-E3/61T and US1D-E3/5AT interchangeable?
A: Both parts are manufactured by Vishay General Semiconductor - Diodes Division with identical electrical specifications. The primary difference is packaging format: US1D-E3/61T is supplied in Cut Tape (CT), while US1D-E3/5AT is supplied in Tape & Reel (TR). Selection depends on assembly equipment compatibility and supply chain requirements.
Q: Can automotive-qualified parts (US1DH, US1DHE3_A/H) be used in non-automotive applications?
A: Yes. Automotive-qualified parts exceed the reliability and testing requirements of standard industrial applications. AEC-Q101 qualification indicates enhanced screening, burn-in testing, and documentation. These parts are suitable for any application requiring the 200 V, 1 A, DO-214AC specifications, with the added benefit of automotive-grade reliability.
Q: What is the difference between ES1D from EVVO Semi and ES1D-HF from Comchip Technology?
A: Both parts are parametric equivalents with identical electrical specifications. The primary difference is manufacturer and packaging format. ES1D from EVVO Semi is available in Cut Tape and Digi-Reel formats with significantly higher inventory (140,400 pcs). ES1D-HF from Comchip Technology is available in Tape & Reel format with lower inventory (8,300 pcs). Selection should consider supply chain stability and packaging requirements.
Q: Why do some substitute parts specify 10 µA reverse leakage instead of 5 µA?
A: Reverse leakage current varies by manufacturer process and quality grade. US1D-E3/5AT, US1D-E3/61T, and US1DHE3_A/H specify 10 µA at 200 V, which is within acceptable limits for general-purpose rectification. The doubling of leakage current is not functionally significant in most applications but should be evaluated in circuits with strict leakage requirements or high-impedance nodes.
Q: Are discontinued parts (HS1D R3G, US1D R3G) still acceptable for new designs?
A: Discontinued parts should not be selected for new designs requiring long-term supply assurance. These parts are suitable only for repair, rework, or short-term production runs where existing inventory is available. For new product development, select from active status parts: ES1D-HF, ES1D, HS1D, US1D, US1D-E3/5AT, US1D-E3/61T, US1DH, or US1DHE3_A/H.
Q: What packaging format should be selected for high-volume surface mount assembly?
A: Tape & Reel (TR) format is standard for automated pick-and-place assembly. ES1C-HF, ES1D-HF, US1D R3G, US1DH, and US1DHE3_A/H are supplied in Tape & Reel format. Cut Tape (CT) format is suitable for lower-volume production or manual assembly. Bag format (HS1D) is not recommended for automated assembly.
Q: Can HS1D from SURGE be used as a substitute despite the 20 pF capacitance specification?
A: HS1D specifies 20 pF capacitance at 4 V, 1 MHz, compared to 15 pF in the ES1C-HF. This 5 pF difference is within acceptable tolerance for general-purpose rectification applications. However, in high-frequency switching circuits or applications with strict capacitance requirements, this difference should be evaluated against circuit performance specifications.
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