ES1C-HF Equivalent & Substitute Parts

Part Overview

The ES1C-HF is a general-purpose rectifier diode manufactured by Comchip Technology, rated for 200 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This fast recovery diode with 35 ns reverse recovery time is designed for standard rectification applications requiring compact form factors and reliable performance across industrial temperature ranges.

The ES1C-HF is classified as an active product with ROHS3 compliance and unlimited moisture sensitivity rating. Equivalent and substitute parts become necessary when the primary part experiences supply constraints, inventory limitations, or when design flexibility across multiple manufacturers is required for production optimization.

Substiute Parts

ES1C-HF
Comchip TechnologyIn Stock: 755ES1C-HF Datasheet
ES1C-HF
Current Part
ES1D-HF
Comchip TechnologyIn Stock: 8325ES1D-HF Datasheet
ES1D-HF
Parametric Equivalent
ES1D
EVVO SemiIn Stock: 140421ES1D Datasheet
ES1D
Parametric Equivalent
HS1D
SURGEIn Stock: 18613HS1D Datasheet
HS1D
Parametric Equivalent
HS1D R3G
Taiwan Semiconductor CorporationIn Stock: 5202HS1D R3G Datasheet
HS1D R3G
Parametric Equivalent
US1D
SMC Diode SolutionsIn Stock: 41404US1D Datasheet
US1D
Parametric Equivalent
US1D R3G
Taiwan Semiconductor CorporationIn Stock: 5605US1D R3G Datasheet
US1D R3G
Parametric Equivalent
US1D-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 6012US1D-E3/5AT Datasheet
US1D-E3/5AT
Parametric Equivalent
US1D-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 83907US1D-E3/61T Datasheet
US1D-E3/61T
Parametric Equivalent
US1DH
Taiwan Semiconductor CorporationIn Stock: 15958US1DH Datasheet
US1DH
Parametric Equivalent
US1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 18297US1DHE3_A/H Datasheet
US1DHE3_A/H
Parametric Equivalent
US1D_R1_00001
Panjit International Inc.In Stock: 7215US1D_R1_00001 Datasheet
US1D_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) Maximum 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) Maximum @ If 1 V @ 1 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 150 V
Capacitance @ Vr, F 15 pF @ 4V, 1MHz
Package / Case DO-214AC, SMA
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the ES1C-HF is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

  • Voltage - DC Reverse (Vr) Maximum: 200 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) Maximum @ If: 1 V @ 1 A
  • Package / Case: DO-214AC, SMA
  • Mounting Type: Surface Mount
  • Operating Temperature - Junction: -55°C to 150°C
  • Technology: Standard
  • RoHS Status: ROHS3 Compliant

Secondary Equivalence Parameters:

  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA
  • Reverse Recovery Time (trr): 35 ns or 50 ns (acceptable variance)
  • Current - Reverse Leakage @ Vr: 5 µA to 10 µA @ 150 V to 200 V
  • Capacitance @ Vr, F: 15 pF to 20 pF @ 4V, 1MHz

All substitute parts listed maintain the core electrical specifications required for direct functional replacement. Variations in reverse recovery time (35 ns versus 50 ns) and reverse leakage current (5 µA versus 10 µA) remain within acceptable operating margins for general-purpose rectification applications.

Parameter Comparison

Part Number Manufacturer Vr (Max) V Io (A) Vf (Max) @ If (V) trr (ns) Ir @ Vr (µA) C @ Vr (pF) Package Status
ES1C-HF Comchip Technology 200 1 1 @ 1A 35 5 @ 150V 15 @ 4V DO-214AC Active
ES1D-HF Comchip Technology 200 1 1 @ 1A 35 5 @ 200V 15 @ 4V DO-214AC Active
ES1D EVVO Semi 200 1 1 @ 1A 35 5 @ 200V 15 @ 4V DO-214AC Active
HS1D SURGE 200 1 1 @ 1A 50 5 @ 200V 20 @ 4V DO-214AC Active
HS1D R3G Taiwan Semiconductor Corporation 200 1 1 @ 1A 50 5 @ 200V 15 @ 4V DO-214AC Discontinued at DiGi Electronics
US1D SMC Diode Solutions 200 1 1 @ 1A DO-214AC Active
US1D R3G Taiwan Semiconductor Corporation 200 1 1 @ 1A 50 5 @ 200V 15 @ 4V DO-214AC Discontinued at DiGi Electronics
US1D-E3/5AT Vishay General Semiconductor - Diodes Division 200 1 1 @ 1A 50 10 @ 200V 15 @ 4V DO-214AC Active
US1D-E3/61T Vishay General Semiconductor - Diodes Division 200 1 1 @ 1A 50 10 @ 200V 15 @ 4V DO-214AC Active
US1DH Taiwan Semiconductor Corporation 200 1 1 @ 1A 50 5 @ 200V 15 @ 4V DO-214AC Active
US1DHE3_A/H Vishay General Semiconductor - Diodes Division 200 1 1 @ 1A 50 10 @ 200V 15 @ 4V DO-214AC Active

Engineering Selection Recommendations

Tier 1 - Direct Equivalents (Preferred for Drop-In Replacement):

ES1D-HF and ES1D from EVVO Semi are the closest functional equivalents to the ES1C-HF. Both maintain the 35 ns reverse recovery time specification and identical electrical characteristics. ES1D-HF is available in Tape & Reel packaging matching the original specification, while ES1D is available in Cut Tape and Digi-Reel formats. Both are active products with ROHS3 compliance.

Tier 2 - Acceptable Substitutes (50 ns Reverse Recovery Time):

HS1D, HS1D R3G, US1D R3G, US1D-E3/5AT, US1D-E3/61T, US1DH, and US1DHE3_A/H all meet the core electrical requirements with a 50 ns reverse recovery time specification. This represents a 15 ns increase from the ES1C-HF baseline but remains within fast recovery diode classification. These parts are suitable for applications where the extended recovery time does not impact circuit performance.

US1D-E3/5AT, US1D-E3/61T, and US1DHE3_A/H specify 10 µA reverse leakage current at 200 V, compared to 5 µA in the ES1C-HF. This doubling of leakage current remains acceptable for general-purpose rectification but should be evaluated in applications with stringent leakage requirements.

US1DH and US1DHE3_A/H carry AEC-Q101 automotive qualification, making them suitable for automotive-grade applications requiring enhanced reliability documentation.

Tier 3 - Limited Availability:

HS1D R3G and US1D R3G are discontinued at DiGi Electronics and should be considered only when existing inventory is available and long-term supply is not required.

Packaging Considerations:

The ES1C-HF is supplied in Tape & Reel (TR) format. Equivalent parts are available in multiple packaging formats: Tape & Reel (ES1D-HF, US1D R3G, US1DHE3_A/H), Cut Tape (ES1D, US1D-E3/61T, HS1D R3G), and Bag (HS1D). Selection should account for assembly line requirements and minimum order quantities.

Frequently Asked Questions (FAQ)

Q: Can ES1D-HF be used as a direct replacement for ES1C-HF?

A: Yes. ES1D-HF is a parametric equivalent with identical voltage, current, forward voltage, and reverse recovery time specifications. Both are manufactured by Comchip Technology in DO-214AC packaging with ROHS3 compliance. The primary difference is the reverse leakage measurement point (200 V versus 150 V), which does not affect functional compatibility.

Q: What is the significance of the 35 ns versus 50 ns reverse recovery time difference?

A: The ES1C-HF specifies 35 ns reverse recovery time, while most substitute parts specify 50 ns. Both classifications fall within the fast recovery diode category (≤ 500 ns). The 15 ns difference affects switching speed in high-frequency applications. For standard rectification at line frequencies (50/60 Hz) or moderate switching frequencies, this difference is not functionally significant. Applications operating above 100 kHz should evaluate the impact on circuit performance.

Q: Are US1D-E3/61T and US1D-E3/5AT interchangeable?

A: Both parts are manufactured by Vishay General Semiconductor - Diodes Division with identical electrical specifications. The primary difference is packaging format: US1D-E3/61T is supplied in Cut Tape (CT), while US1D-E3/5AT is supplied in Tape & Reel (TR). Selection depends on assembly equipment compatibility and supply chain requirements.

Q: Can automotive-qualified parts (US1DH, US1DHE3_A/H) be used in non-automotive applications?

A: Yes. Automotive-qualified parts exceed the reliability and testing requirements of standard industrial applications. AEC-Q101 qualification indicates enhanced screening, burn-in testing, and documentation. These parts are suitable for any application requiring the 200 V, 1 A, DO-214AC specifications, with the added benefit of automotive-grade reliability.

Q: What is the difference between ES1D from EVVO Semi and ES1D-HF from Comchip Technology?

A: Both parts are parametric equivalents with identical electrical specifications. The primary difference is manufacturer and packaging format. ES1D from EVVO Semi is available in Cut Tape and Digi-Reel formats with significantly higher inventory (140,400 pcs). ES1D-HF from Comchip Technology is available in Tape & Reel format with lower inventory (8,300 pcs). Selection should consider supply chain stability and packaging requirements.

Q: Why do some substitute parts specify 10 µA reverse leakage instead of 5 µA?

A: Reverse leakage current varies by manufacturer process and quality grade. US1D-E3/5AT, US1D-E3/61T, and US1DHE3_A/H specify 10 µA at 200 V, which is within acceptable limits for general-purpose rectification. The doubling of leakage current is not functionally significant in most applications but should be evaluated in circuits with strict leakage requirements or high-impedance nodes.

Q: Are discontinued parts (HS1D R3G, US1D R3G) still acceptable for new designs?

A: Discontinued parts should not be selected for new designs requiring long-term supply assurance. These parts are suitable only for repair, rework, or short-term production runs where existing inventory is available. For new product development, select from active status parts: ES1D-HF, ES1D, HS1D, US1D, US1D-E3/5AT, US1D-E3/61T, US1DH, or US1DHE3_A/H.

Q: What packaging format should be selected for high-volume surface mount assembly?

A: Tape & Reel (TR) format is standard for automated pick-and-place assembly. ES1C-HF, ES1D-HF, US1D R3G, US1DH, and US1DHE3_A/H are supplied in Tape & Reel format. Cut Tape (CT) format is suitable for lower-volume production or manual assembly. Bag format (HS1D) is not recommended for automated assembly.

Q: Can HS1D from SURGE be used as a substitute despite the 20 pF capacitance specification?

A: HS1D specifies 20 pF capacitance at 4 V, 1 MHz, compared to 15 pF in the ES1C-HF. This 5 pF difference is within acceptable tolerance for general-purpose rectification applications. However, in high-frequency switching circuits or applications with strict capacitance requirements, this difference should be evaluated against circuit performance specifications.

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