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ES1BL RFG Equivalent & Substitute Parts
Part Overview
The ES1BL RFG is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 1 A average rectified current in a Sub SMA surface mount package (DO-219AB). This component is classified as Active product status and is RoHS3 compliant with AEC-Q101 automotive qualification available in variant forms.
Substitute parts are necessary when the ES1BL RFG reaches end-of-life status, when specific packaging formats are required, or when design requirements demand enhanced electrical performance characteristics such as lower reverse recovery time or reduced reverse leakage current.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A | mV |
| Reverse Recovery Time (trr) | 35 | ns |
| Current - Reverse Leakage @ Vr | 5 | µA @ 100 V |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) | — |
| Package / Case | DO-219AB | — |
| Mounting Type | Surface Mount | — |
| Operating Temperature - Junction | -55°C ~ 150°C | °C |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the ES1BL RFG is determined by strict equivalence across the following critical parameters:
Primary Substitution Criteria:
- Voltage - DC Reverse (Vr) (Max): 100 V minimum
- Current - Average Rectified (Io): 1 A minimum
- Package / Case: DO-219AB (Sub SMA or SMF variants)
- Mounting Type: Surface Mount
- Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
- Operating Temperature Range: -55°C minimum to 150°C minimum
- RoHS Status: ROHS3 Compliant
Parametric Equivalent Parts (ES1BL, ES1BLH) maintain identical electrical specifications and are direct functional replacements with differences limited to packaging format (Tape & Reel) and product status designation.
Similar Parts (ES07B-GS08, ES07B-GS18, VS-2EFH01HM3/I) share the same package and voltage rating but differ in current rating, reverse recovery time, or reverse leakage characteristics. These parts are suitable for applications where the specified current or performance parameters exceed the minimum requirements of the ES1BL RFG design.
Parameter Comparison
| Parameter | ES1BL RFG | ES1BL | ES1BLH | ES07B-GS08 | ES07B-GS18 | VS-2EFH01HM3/I |
|---|---|---|---|---|---|---|
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor | Vishay | Vishay | Vishay |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Current - Average Rectified (Io) | 1 A | 1 A | 1 A | 500 mA | 1.2 A | 2 A |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A | 950 mV @ 1 A | 950 mV @ 1 A | 980 mV @ 1 A | 980 mV @ 1 A | 950 mV @ 2 A |
| Reverse Recovery Time (trr) | 35 ns | 35 ns | 35 ns | 25 ns | 25 ns | 16 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V | 5 µA @ 100 V | 5 µA @ 100 V | 10 µA @ 100 V | 10 µA @ 100 V | 2 µA @ 100 V |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA |
| Package / Case | DO-219AB | DO-219AB | DO-219AB | DO-219AB | DO-219AB | DO-219AB |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -65°C ~ 175°C |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Product Status | Active | Not For New Designs | Not For New Designs | Active | Active | Active |
| AEC-Q101 Qualification | — | — | Yes | Yes | — | Yes |
Engineering Selection Recommendations
Direct Parametric Equivalents:
ES1BL and ES1BLH are parametric equivalents of the ES1BL RFG with identical electrical specifications. ES1BL is designated "Not For New Designs" and is suitable for legacy system maintenance and repair applications. ES1BLH carries AEC-Q101 automotive qualification and is appropriate for automotive applications requiring formal qualification documentation.
Active Product Alternatives:
ES07B-GS18 (Vishay) is an active product offering 1.2 A current rating with identical 100 V reverse voltage and fast recovery characteristics. This part is suitable for designs requiring higher current capacity within the same package footprint.
ES07B-GS08 (Vishay) is an active product with 500 mA current rating and AEC-Q101 qualification. This part is suitable for applications with reduced current requirements and automotive qualification mandates.
VS-2EFH01HM3/I (Vishay FRED Pt® series) is an active product offering 2 A current rating with superior reverse recovery time (16 ns) and lower reverse leakage current (2 µA). This part is suitable for high-performance applications requiring enhanced switching characteristics and extended operating temperature range (-65°C ~ 175°C). AEC-Q101 qualification is available.
Product Status Consideration:
The ES1BL RFG maintains Active product status. For new designs, ES07B-GS18 or VS-2EFH01HM3/I are recommended as they provide active product status with enhanced performance characteristics.
Frequently Asked Questions (FAQ)
Q: Can ES1BL (without the "H" suffix) be used as a direct replacement for ES1BL RFG?
A: ES1BL is a parametric equivalent with identical electrical specifications (100 V, 1 A, 35 ns reverse recovery time, 5 µA reverse leakage). The primary difference is product status designation ("Not For New Designs") and packaging format (Tape & Reel). Functional compatibility is confirmed for existing applications.
Q: What is the difference between ES1BLH and ES1BL?
A: ES1BLH includes AEC-Q101 automotive qualification and is designated for automotive applications. Both parts share identical electrical parameters. ES1BLH is appropriate when automotive qualification documentation is required.
Q: Can ES07B-GS08 replace ES1BL RFG in all applications?
A: ES07B-GS08 has a lower current rating (500 mA versus 1 A). It is suitable only for applications where the design current does not exceed 500 mA. The 100 V reverse voltage rating and fast recovery characteristics are equivalent. Reverse leakage current is higher (10 µA versus 5 µA).
Q: Why would I select VS-2EFH01HM3/I over ES1BL RFG?
A: VS-2EFH01HM3/I offers superior performance: 2 A current rating, faster reverse recovery time (16 ns versus 35 ns), lower reverse leakage current (2 µA versus 5 µA), and extended operating temperature range (-65°C ~ 175°C versus -55°C ~ 150°C). Selection is appropriate for high-performance switching applications and automotive designs requiring enhanced specifications.
Q: Are all substitute parts available in the same DO-219AB package?
A: All listed substitute parts use the DO-219AB package (Sub SMA or SMF variants). Mechanical compatibility with existing PCB layouts is confirmed. Supplier device package designations may differ (Sub SMA versus SMF) but represent equivalent physical packages.
Q: What is the significance of "Fast Recovery ≤ 500ns, > 200mA (Io)" classification?
A: This classification indicates the diode exhibits fast recovery characteristics with reverse recovery time not exceeding 500 nanoseconds at currents greater than 200 mA. All listed parts meet this specification, confirming suitability for high-frequency switching applications.
Q: Is RoHS3 compliance maintained across all substitute parts?
A: All listed substitute parts are RoHS3 compliant. Compliance status is consistent across the ES1BL RFG and all parametric and similar equivalents.
Q: Can ES07B-GS18 be used in applications designed for ES1BL RFG?
A: ES07B-GS18 is suitable for applications designed for ES1BL RFG. The 1.2 A current rating exceeds the 1 A requirement, providing design margin. Reverse voltage (100 V), package (DO-219AB), and fast recovery characteristics are equivalent. Reverse recovery time is improved (25 ns versus 35 ns), and reverse leakage is higher (10 µA versus 5 µA).
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