ES1BL Equivalent & Substitute Parts

Part Overview

The ES1BL is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 1 A average rectified current. The device features fast recovery characteristics with a reverse recovery time of 35 ns and is packaged in the Sub SMA (DO-219AB) surface mount configuration. The ES1BL is classified as "Not For New Designs," indicating it is an obsolete or legacy component. Identifying equivalent and substitute parts is necessary for ongoing maintenance, repair, and production support of existing systems utilizing this diode.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 1 A	mV
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	5 µA @ 100 V	µA
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Package / Case	DO-219AB	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the ES1BL are classified into two categories based on electrical and mechanical compatibility:

Category 1: Parametric Equivalents (Direct Replacements)

Parametric equivalent parts maintain identical electrical specifications across all critical parameters: 100 V reverse voltage rating, 1 A average rectified current, 950 mV forward voltage drop at 1 A, 35 ns reverse recovery time, and 5 µA reverse leakage current at rated voltage. These parts are packaged in the same DO-219AB Sub SMA configuration and operate across the same temperature range (-55°C to 150°C). Parametric equivalents differ only in manufacturing date codes or internal lot designations, indicated by suffixes such as M2G, MHG, MTG, RFG, RHG, RQG, RTG, and RUG. These variants are interchangeable without circuit modification.

Category 2: Functional Substitutes (Enhanced Specifications)

The ES1DLW represents a functional substitute with enhanced voltage rating (200 V versus 100 V) while maintaining identical current capacity (1 A), forward voltage characteristics (950 mV @ 1 A), and recovery speed (35 ns trr). The ES1DLW is packaged in SOD-123W and operates across an extended temperature range (-55°C to 175°C). This substitute is suitable for applications where higher voltage margin is beneficial, though it requires verification of package footprint compatibility with the original DO-219AB Sub SMA layout.

Substitution logic is based strictly on the following allowed parameters:

Voltage - DC Reverse (Vr) (Max): Equal or greater than 100 V
Current - Average Rectified (Io): Equal to or greater than 1 A
Voltage - Forward (Vf) (Max) @ If: Equal to or less than 950 mV @ 1 A
Reverse Recovery Time (trr): Equal to or less than 35 ns
Current - Reverse Leakage @ Vr: Equal to or less than 5 µA
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ 1A [mV]	trr [ns]	Ir @ Vr [µA]	Package	Temp Range [°C]	Product Status
ES1BL	Taiwan Semiconductor Corporation	100	1	950	35	5 @ 100V	DO-219AB (Sub SMA)	-55 to 150	Not For New Designs
ES1BL M2G	Taiwan Semiconductor Corporation	100	1	950	35	5 @ 100V	DO-219AB (Sub SMA)	-55 to 150	Active
ES1BL MHG	Taiwan Semiconductor Corporation	100	1	950	35	5 @ 100V	DO-219AB (Sub SMA)	-55 to 150	Active
ES1BL MTG	Taiwan Semiconductor Corporation	100	1	950	35	5 @ 100V	DO-219AB (Sub SMA)	-55 to 150	Active
ES1BL RFG	Taiwan Semiconductor Corporation	100	1	950	35	5 @ 100V	DO-219AB (Sub SMA)	-55 to 150	Active
ES1BL RHG	Taiwan Semiconductor Corporation	100	1	950	35	5 @ 100V	DO-219AB (Sub SMA)	-55 to 150	Active
ES1BL RQG	Taiwan Semiconductor Corporation	100	1	950	35	5 @ 100V	DO-219AB (Sub SMA)	-55 to 150	Active
ES1BL RTG	Taiwan Semiconductor Corporation	100	1	950	35	5 @ 100V	DO-219AB (Sub SMA)	-55 to 150	Active
ES1BL RUG	Taiwan Semiconductor Corporation	100	1	950	35	5 @ 100V	DO-219AB (Sub SMA)	-55 to 150	Active
ES1DLW	Taiwan Semiconductor Corporation	200	1	950	35	5 @ 200V	SOD-123W	-55 to 175	Active

Engineering Selection Recommendations

For Direct Replacement (Parametric Equivalents)

The ES1BL M2G, ES1BL MHG, ES1BL MTG, ES1BL RFG, ES1BL RHG, ES1BL RQG, ES1BL RTG, and ES1BL RUG are recommended as direct replacements for the obsolete ES1BL. All parametric equivalents maintain identical electrical performance and package configuration. These variants are classified as Active products, ensuring ongoing availability and manufacturing support. All variants comply with ROHS3 and carry MSL 1 (Unlimited) moisture sensitivity ratings, matching the original part's environmental specifications.

For Enhanced Voltage Margin Applications

The ES1DLW is suitable for applications requiring higher reverse voltage headroom. With a 200 V rating compared to the ES1BL's 100 V rating, the ES1DLW provides additional safety margin in circuits subject to voltage transients or overvoltage conditions. The ES1DLW maintains identical forward voltage drop (950 mV @ 1 A) and recovery speed (35 ns), ensuring functional compatibility in rectification circuits. The ES1DLW is packaged in SOD-123W, which differs from the original DO-219AB Sub SMA package. Circuit board layout modification is required to accommodate the different footprint. The ES1DLW operates across an extended temperature range (-55°C to 175°C), providing additional thermal margin compared to the original part's -55°C to 150°C range. The ES1DLW is classified as Active, ensuring long-term availability.

Frequently Asked Questions (FAQ)

Q: Can ES1BL parametric equivalents (M2G, MHG, MTG, RFG, RHG, RQG, RTG, RUG) be used interchangeably without circuit modification?

A: Yes. All parametric equivalents maintain identical electrical specifications and package configuration. The suffixes indicate manufacturing date codes or internal lot designations only. No circuit modification is required for substitution.

Q: What is the primary difference between the ES1BL and ES1DLW?

A: The ES1DLW features a 200 V reverse voltage rating compared to the ES1BL's 100 V rating. Both devices maintain identical 1 A current capacity, 950 mV forward voltage drop, and 35 ns reverse recovery time. The ES1DLW is packaged in SOD-123W instead of DO-219AB Sub SMA, requiring PCB layout modification.

Q: Is the ES1DLW a direct replacement for the ES1BL?

A: The ES1DLW is a functional substitute with enhanced voltage specifications, not a direct replacement. While electrical performance is compatible for rectification applications, the different package (SOD-123W versus DO-219AB Sub SMA) requires PCB footprint verification and potential layout redesign.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts, including parametric equivalents and the ES1DLW, are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings.

Q: What is the inventory status of available substitutes?

A: ES1BL M2G, MHG, MTG, RFG, RHG, RQG, RTG, and RUG are all classified as Active products with current inventory. The ES1DLW is also Active with higher inventory availability. Specific stock quantities should be confirmed with the supplier.

Q: Can the ES1BL be used in new circuit designs?

A: No. The ES1BL is classified as "Not For New Designs." For new applications, select from the Active parametric equivalents (ES1BL M2G, MHG, MTG, RFG, RHG, RQG, RTG, RUG) or the ES1DLW for enhanced voltage margin requirements.

Q: What is the operating temperature range difference between ES1BL and ES1DLW?

A: The ES1BL operates from -55°C to 150°C junction temperature. The ES1DLW extends the upper limit to 175°C, providing an additional 25°C thermal margin for high-temperature applications.

Q: Are there any package compatibility considerations when substituting the ES1BL?

A: Parametric equivalents use the identical DO-219AB Sub SMA package, requiring no layout changes. The ES1DLW uses SOD-123W packaging, which has a different footprint. PCB layout verification is mandatory before substituting with ES1DLW.

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