ES1B Equivalent & Substitute Parts Reference

Part Overview

The ES1B is a superfast recovery rectifier diode manufactured by onsemi, rated for 100 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This component is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product portfolio. Equivalent and substitute parts are necessary for legacy system support, design continuity, and procurement flexibility when the primary part becomes unavailable or when alternative electrical characteristics better suit specific application requirements.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	920 mV @ 1 A	mV
Reverse Recovery Time (trr)	15	ns
Current - Reverse Leakage @ Vr	5	µA @ 100 V
Package / Case	DO-214AC, SMA	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the ES1B is determined by strict alignment of electrical and mechanical parameters. The primary substitution criteria are:

Mandatory Matching Parameters:

Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1 A
Mounting Type: Surface Mount
RoHS Compliance: ROHS3 Compliant

Package Compatibility: Substitutes are grouped into two categories based on package type:

DO-214AC (SMA) Package: Direct mechanical and electrical equivalents with identical footprint
DO-214BA (GF1) Package: Electrical equivalents with different surface mount footprint; requires PCB layout modification

Recovery Speed Considerations: The ES1B features fast recovery with reverse recovery time (trr) of 15 ns. Substitutes are classified as:

Fast Recovery (≤500 ns, >200 mA): Suitable for high-frequency switching applications
Standard Recovery (>500 ns, >200 mA): Acceptable for general-purpose rectification with lower switching frequency requirements

Forward Voltage Characteristics: Forward voltage drop ranges from 875 mV to 1.1 V across substitute options. Selection depends on power dissipation and thermal management constraints in the target application.

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io	Vf @ 1A	trr	Package	Product Status	Temp Range
ES1B	onsemi	100 V	1 A	920 mV	15 ns	DO-214AC (SMA)	Not For New Designs	-55 to 150°C
MURA110T3G	onsemi	100 V	1 A	875 mV	30 ns	DO-214AC (SMA)	Active	-65 to 175°C
S1B	YAGEO	100 V	1.1 A	—	—	DO-214AC (SMA)	Active	—
EGF1B-E3/5CA	Vishay General Semiconductor - Diodes Division	100 V	1 A	1 V	50 ns	DO-214BA (GF1)	Active	-65 to 175°C
EGF1B-E3/67A	Vishay General Semiconductor - Diodes Division	100 V	1 A	1 V	50 ns	DO-214BA (GF1)	Not For New Designs	-65 to 175°C
ES1B-LTP	Micro Commercial Co	100 V	1 A	950 mV	35 ns	DO-214AC (SMA)	Not For New Designs	-65 to 175°C
ESH1BHE3_A/H	Vishay General Semiconductor - Diodes Division	100 V	1 A	900 mV	25 ns	DO-214AC (SMA)	Active	-55 to 175°C
ESH1BHE3_A/I	Vishay General Semiconductor - Diodes Division	100 V	1 A	900 mV	25 ns	DO-214AC (SMA)	Active	-55 to 175°C
GF1B-E3/5CA	Vishay General Semiconductor - Diodes Division	100 V	1 A	1.1 V	2 µs	DO-214BA (GF1)	Active	-65 to 175°C
GF1B-E3/67A	Vishay General Semiconductor - Diodes Division	100 V	1 A	1.1 V	2 µs	DO-214BA (GF1)	Not For New Designs	-65 to 175°C
GS1B-LTP	Micro Commercial Co	100 V	1 A	1 V	—	DO-214AC (SMA)	Not For New Designs	-55 to 150°C

Engineering Selection Recommendations

For Direct Replacement (DO-214AC/SMA Package):

MURA110T3G is the primary active substitute from onsemi. It maintains identical package geometry and voltage/current ratings while offering improved temperature range (-65 to 175°C versus -55 to 150°C). Forward voltage is lower at 875 mV, reducing power dissipation. Reverse recovery time is 30 ns, acceptable for most general-purpose rectification circuits.

ESH1BHE3_A/H and ESH1BHE3_A/I are active Vishay alternatives with automotive-grade qualification (AEC-Q101). These parts feature 25 ns reverse recovery time and 900 mV forward voltage, providing performance between the ES1B and MURA110T3G. Automotive qualification is relevant only for applications requiring AEC-Q101 compliance.

ES1B-LTP and GS1B-LTP are legacy parts marked "Not For New Designs" and should be used only for legacy system maintenance.

For Package-Compatible Alternatives (DO-214BA/GF1 Package):

EGF1B-E3/5CA is an active Vishay substitute with DO-214BA package. It requires PCB layout modification but offers 50 ns recovery time and extended temperature range. This part is suitable when PCB redesign is acceptable and Vishay component qualification is required.

GF1B-E3/5CA is an active general-purpose alternative with standard recovery characteristics (2 µs recovery time). This part is appropriate only for low-frequency rectification where fast recovery is not required.

Product Status Considerations:

Parts marked "Active" (MURA110T3G, S1B, EGF1B-E3/5CA, ESH1BHE3_A/H, ESH1BHE3_A/I, GF1B-E3/5CA) are recommended for new designs and long-term procurement. Parts marked "Not For New Designs" should be reserved for legacy system support only.

Frequently Asked Questions (FAQ)

Q: Can MURA110T3G replace ES1B in existing designs without PCB modification?

A: Yes. MURA110T3G is pin-compatible and package-compatible with ES1B in DO-214AC (SMA) configuration. No PCB layout changes are required. Electrical parameters are within acceptable ranges for general-purpose rectification applications.

Q: What is the difference between DO-214AC and DO-214BA packages?

A: DO-214AC (SMA) and DO-214BA (GF1) are different surface mount package outlines with different footprints. Substitution between these packages requires PCB redesign. DO-214AC is smaller and more commonly used in compact designs. DO-214BA is larger and used in some legacy designs.

Q: Why does ES1B have a 15 ns recovery time while MURA110T3G has 30 ns?

A: Recovery time is a function of diode semiconductor design and doping profile. The ES1B uses a superfast recovery design optimized for high-frequency switching. MURA110T3G uses a standard fast recovery design suitable for general-purpose rectification. For applications operating below 1 MHz, the difference is not significant. For switching frequencies above 1 MHz, ES1B or ESH1BHE3 variants are preferred.

Q: Are ESH1BHE3_A/H and ESH1BHE3_A/I interchangeable?

A: Yes. Both parts have identical electrical specifications and package configuration. The suffix designations (_A/H and _A/I) indicate different manufacturing date codes or tape reel configurations. They are functionally equivalent for circuit design purposes.

Q: What is the significance of AEC-Q101 qualification on ESH1BHE3 parts?

A: AEC-Q101 is an automotive industry qualification standard. ESH1BHE3_A/H and ESH1BHE3_A/I meet this qualification, making them suitable for automotive applications requiring supplier component certification. Non-automotive applications do not require this qualification.

Q: Can GF1B-E3/5CA be used in high-frequency switching applications?

A: No. GF1B-E3/5CA has a 2 µs (2000 ns) recovery time, classified as standard recovery. This part is suitable only for low-frequency rectification (below 100 kHz). For high-frequency switching, use fast recovery parts: MURA110T3G, EGF1B-E3/5CA, or ESH1BHE3 variants.

Q: What is the temperature range difference between ES1B and MURA110T3G?

A: ES1B operates from -55°C to 150°C junction temperature. MURA110T3G operates from -65°C to 175°C. MURA110T3G provides 10°C lower minimum and 25°C higher maximum operating temperature, offering broader thermal operating range for industrial and extended-temperature applications.

Q: Is forward voltage drop a critical parameter for substitution?

A: Forward voltage drop affects power dissipation and thermal management. ES1B has 920 mV drop, while MURA110T3G has 875 mV. The 45 mV difference results in approximately 4.5% lower power dissipation in MURA110T3G at 1 A. For high-current or thermally constrained designs, lower forward voltage is beneficial. For general-purpose applications, the difference is negligible.

Q: Why are some parts listed as "Not For New Designs"?

A: Manufacturers designate parts as "Not For New Designs" when they have been superseded by improved alternatives or when production is being phased out. These parts remain available for legacy system support but should not be selected for new product development. Active alternatives should be used for new designs to ensure long-term supply availability and access to manufacturing improvements.

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