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ES1A M2G Equivalent & Substitute Parts
Part Overview
The ES1A M2G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 50 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement.
The ES1A M2G operates across a junction temperature range of -55°C to 150°C and features fast recovery characteristics with a reverse recovery time of 35 nanoseconds. It is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1) and is suitable for general rectification applications requiring standard diode performance.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) Maximum | 50 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) Maximum @ If | 950 mV @ 1 A | mV |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) | — |
| Reverse Recovery Time (trr) | 35 | ns |
| Current - Reverse Leakage @ Vr | 5 | µA @ 50 V |
| Capacitance @ Vr, F | 16 | pF @ 1V, 1MHz |
| Package / Case | DO-214AC, SMA | — |
| Mounting Type | Surface Mount | — |
| Operating Temperature - Junction | -55 to 150 | °C |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the ES1A M2G is determined by strict equivalence across the following critical parameters:
Mandatory Equivalence Parameters:
- Voltage - DC Reverse (Vr) Maximum: 50 V
- Current - Average Rectified (Io): 1 A
- Package / Case: DO-214AC, SMA
- Mounting Type: Surface Mount
- RoHS Status: ROHS3 Compliant
- Moisture Sensitivity Level: 1 (Unlimited)
Performance Parameters (Allowable Variation):
- Voltage - Forward (Vf) Maximum @ If: 920–950 mV @ 1 A
- Speed Classification: Fast Recovery (≤ 500ns) or Standard Recovery (> 500ns)
- Reverse Recovery Time (trr): 25–35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Operating Temperature - Junction: -55°C minimum to 150°C minimum
Substitute parts are classified into three categories:
Parametric Equivalent: Parts with identical electrical specifications and active product status, suitable for direct replacement in new designs.
Direct Manufacturer Equivalent: Parts from the same manufacturer with matching specifications but different product status or packaging format.
Similar Specification: Parts meeting all mandatory parameters with minor variations in performance characteristics (forward voltage, recovery time, or temperature range) that remain within functional tolerance for general-purpose rectification applications.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Vr (Max) V | Io (A) | Vf (Max) @ 1A (mV) | Speed | trr (ns) | Ir @ Vr (µA) | Package | Product Status | Temp Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|
| ES1A M2G | Taiwan Semiconductor Corporation | 50 | 1 | 950 | Fast Recovery ≤ 500ns | 35 | 5 @ 50V | DO-214AC, SMA | Discontinued | -55 to 150 |
| ES1A | YAGEO | 50 | 1 | 950 | — | — | 5 @ 50V | DO-214AC, SMA | Active | — |
| ES1AH | Taiwan Semiconductor Corporation | 50 | 1 | 950 | Fast Recovery ≤ 500ns | 35 | 5 @ 50V | DO-214AC, SMA | Active | -55 to 150 |
| ES1A-LTP | Micro Commercial Co | 50 | 1 | 950 | Fast Recovery ≤ 500ns | 35 | 5 @ 50V | DO-214AC, SMA | Not For New Designs | -65 to 175 |
| CGRA4001-G | Comchip Technology | 50 | 1 | 1100 | Standard Recovery > 500ns | — | 5 @ 50V | DO-214AC, SMA | Active | -55 to 150 |
| ES1A-13-F | Diodes Incorporated | 50 | 1 | 920 | Fast Recovery ≤ 500ns | 25 | 5 @ 50V | DO-214AC, SMA | Active | -55 to 150 |
| ES1A-E3/5AT | Vishay General Semiconductor - Diodes Division | 50 | 1 | 920 | Fast Recovery ≤ 500ns | 25 | 5 @ 50V | DO-214AC, SMA | Active | -55 to 155 |
| ES1A-M3/5AT | Vishay General Semiconductor - Diodes Division | 50 | 1 | 920 | Fast Recovery ≤ 500ns | 25 | 5 @ 50V | DO-214AC, SMA | Active | -55 to 150 |
| ES1A-M3/61T | Vishay General Semiconductor - Diodes Division | 50 | 1 | 920 | Fast Recovery ≤ 500ns | 25 | 5 @ 50V | DO-214AC, SMA | Active | -55 to 150 |
| ES1AHE3_A/H | Vishay General Semiconductor - Diodes Division | 50 | 1 | 920 | Fast Recovery ≤ 500ns | 25 | 5 @ 50V | DO-214AC, SMA | Active | -55 to 150 |
| ES1AHE3_A/I | Vishay General Semiconductor - Diodes Division | 50 | 1 | 920 | Fast Recovery ≤ 500ns | 25 | 5 @ 50V | DO-214AC, SMA | Active | -55 to 150 |
Engineering Selection Recommendations
Parametric Equivalent - Recommended for Direct Replacement:
The ES1AH (Taiwan Semiconductor Corporation) is the primary parametric equivalent. It maintains identical electrical specifications to the ES1A M2G, including 50 V reverse voltage, 1 A average rectified current, 950 mV forward voltage at 1 A, 35 ns reverse recovery time, and -55°C to 150°C operating temperature range. The ES1AH is active in production and RoHS3 compliant. This part is suitable for direct substitution in existing designs without circuit modification.
The ES1A (YAGEO) is a parametric equivalent with matching voltage and current ratings and 950 mV forward voltage specification. YAGEO maintains high inventory levels (80,200 pieces) and active product status. This part is suitable for applications where the original manufacturer source is not critical.
Active Alternatives with Minor Performance Variation:
The ES1A-13-F (Diodes Incorporated), ES1A-E3/5AT (Vishay), ES1A-M3/5AT (Vishay), ES1A-M3/61T (Vishay), ES1AHE3_A/H (Vishay), and ES1AHE3_A/I (Vishay) all meet mandatory electrical parameters with improved performance characteristics. These parts feature 920 mV forward voltage (30 mV lower than the original) and 25 ns reverse recovery time (10 ns faster than the original). All are active in production, RoHS3 compliant, and operate across -55°C to 150°C or -55°C to 155°C temperature ranges. These parts are suitable for new designs and provide enhanced switching performance.
The ES1AHE3_A/H and ES1AHE3_A/I variants include automotive-grade qualification (AEC-Q101) and are suitable for automotive applications requiring enhanced reliability.
Not Recommended for New Designs:
The ES1A-LTP (Micro Commercial Co) is marked "Not For New Designs" and should be used only for legacy system support or repair applications where original part compatibility is mandatory.
Limited Substitution - Performance Trade-off:
The CGRA4001-G (Comchip Technology) meets all mandatory parameters but features standard recovery speed (> 500ns) and 1100 mV forward voltage. This part is suitable only for applications where switching speed is not critical and higher forward voltage drop is acceptable.
Frequently Asked Questions (FAQ)
Q: Can the ES1A M2G be directly replaced with the ES1AH?
A: Yes. The ES1AH is a parametric equivalent manufactured by the same company (Taiwan Semiconductor Corporation) with identical electrical specifications, package type (DO-214AC, SMA), and operating temperature range (-55°C to 150°C). The ES1AH is active in production and suitable for direct substitution.
Q: What is the difference between the ES1A-13-F and the original ES1A M2G?
A: The ES1A-13-F (Diodes Incorporated) meets all mandatory parameters but features improved performance: forward voltage of 920 mV (versus 950 mV) and reverse recovery time of 25 ns (versus 35 ns). Both are fast recovery diodes in DO-214AC packages. The lower forward voltage and faster recovery time result in reduced power dissipation and improved switching characteristics. The ES1A-13-F is active in production and suitable for new designs.
Q: Are the Vishay parts (ES1A-E3/5AT, ES1A-M3/5AT, ES1A-M3/61T) interchangeable with the ES1A M2G?
A: Yes, with performance improvement. All Vishay parts meet the mandatory electrical parameters (50 V, 1 A, DO-214AC package) and feature identical reverse leakage current (5 µA @ 50 V). The Vishay parts offer 920 mV forward voltage and 25 ns reverse recovery time, both superior to the original specification. All are active in production and RoHS3 compliant.
Q: What is the difference between ES1AHE3_A/H and ES1AHE3_A/I?
A: Both parts are manufactured by Vishay General Semiconductor - Diodes Division and share identical electrical specifications, package type, and operating temperature range. The suffix designations (_A/H and _A/I) indicate different manufacturing or qualification batches. Both include automotive-grade qualification (AEC-Q101) and are suitable for automotive applications. Selection between these variants depends on specific procurement or supply chain requirements.
Q: Can the CGRA4001-G be used as a substitute for the ES1A M2G?
A: The CGRA4001-G meets mandatory voltage and current parameters but has two significant differences: standard recovery speed (> 500ns versus fast recovery ≤ 500ns) and higher forward voltage (1100 mV versus 950 mV). This part is suitable only for applications where switching speed is not critical and the additional forward voltage drop (150 mV) does not impact circuit performance. For general-purpose rectification with standard switching requirements, faster recovery alternatives are preferred.
Q: What does "Not For New Designs" mean for the ES1A-LTP?
A: This designation indicates the part is in mature or end-of-life status and is not recommended for incorporation into new product designs. The ES1A-LTP should be used only for repair, maintenance, or legacy system support where original part compatibility is mandatory. For new designs, select from active alternatives such as ES1AH, ES1A-13-F, or Vishay variants.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed in this reference are RoHS3 compliant and have unlimited moisture sensitivity level (MSL 1), matching the compliance profile of the original ES1A M2G.
Q: What is the significance of the DO-214AC (SMA) package designation?
A: DO-214AC and SMA are equivalent designations for the same surface mount diode package. All substitute parts use this identical package, ensuring mechanical and electrical compatibility with existing PCB layouts and assembly processes. No board redesign or rework is required when substituting between parts with this package specification.
Q: Which substitute offers the best performance improvement over the ES1A M2G?
A: The Diodes Incorporated ES1A-13-F and all Vishay variants (ES1A-E3/5AT, ES1A-M3/5AT, ES1A-M3/61T, ES1AHE3_A/H, ES1AHE3_A/I) offer identical performance improvements: 30 mV lower forward voltage (920 mV versus 950 mV) and 10 ns faster reverse recovery time (25 ns versus 35 ns). These improvements reduce power dissipation and enable faster switching. All are active in production and suitable for new designs.
Q: Can automotive-qualified parts (ES1AHE3_A/H, ES1AHE3_A/I) be used in non-automotive applications?
A: Yes. Automotive-qualified parts exceed the reliability and qualification requirements of general-purpose applications. The AEC-Q101 qualification ensures enhanced testing and quality assurance. These parts are suitable for any application requiring the specified electrical parameters, including non-automotive uses.
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