ES1ALHMHG Equivalent & Substitute Parts

Part Overview

The ES1ALHMHG is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 50 V DC reverse voltage and 1 A average rectified current in a Sub SMA surface mount package. This component is classified as Active product status and meets automotive-grade qualification standards under AEC-Q101. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, supply chain considerations, or design flexibility needs.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	50	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 1 A	mV
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	5	µA @ 50 V
Package / Case	DO-219AB	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-55 to 150	°C
Grade	Automotive	—
Qualification	AEC-Q101	—

Substitute Part Grouping Explanation

Substitute parts for the ES1ALHMHG are identified based on strict equivalence across the following critical parameters:

Voltage Rating: DC reverse voltage of 50 V (maximum)
Current Rating: Average rectified current of 1 A
Forward Voltage Drop: 950 mV maximum at 1 A forward current
Package Type: DO-219AB Sub SMA surface mount configuration
Mounting Technology: Surface mount assembly compatibility
Operating Temperature Range: -55°C to 150°C junction temperature
Automotive Compliance: AEC-Q101 qualification and automotive-grade classification
RoHS Status: ROHS3 compliance requirement

The HS1AL RVG meets all these critical parameters and is therefore classified as a parametric equivalent substitute. Both parts share identical voltage and current ratings, forward voltage characteristics, package designation, temperature range, and automotive qualification status.

Parameter Comparison

Parameter	ES1ALHMHG	HS1AL RVG	Unit
Manufacturer	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	—
Category	Diodes, Rectifiers	Diodes, Rectifiers	—
Voltage - DC Reverse (Vr) (Max)	50	50	V
Current - Average Rectified (Io)	1	1	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 1 A	950 mV @ 1 A	mV
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	35	50	ns
Current - Reverse Leakage @ Vr	5	5	µA @ 50 V
Capacitance @ Vr, F	10pF @ 4V, 1MHz	20pF @ 4V, 1MHz	pF
Package / Case	DO-219AB	DO-219AB	—
Mounting Type	Surface Mount	Surface Mount	—
Operating Temperature - Junction	-55 to 150	-55 to 150	°C
Grade	Automotive	Automotive	—
Qualification	AEC-Q101	AEC-Q101	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	—
Product Status	Active	Active	—

Engineering Selection Recommendations

Both the ES1ALHMHG and HS1AL RVG are Active product status components manufactured by Taiwan Semiconductor Corporation with identical automotive-grade qualification under AEC-Q101. Both parts satisfy ROHS3 compliance and REACH unaffected status requirements.

The primary difference between these parts is the reverse recovery time specification: the ES1ALHMHG exhibits 35 ns trr while the HS1AL RVG exhibits 50 ns trr. Both values fall within the Fast Recovery classification (≤ 500 ns for currents > 200 mA). Additionally, the HS1AL RVG demonstrates higher junction capacitance at 20 pF compared to 10 pF for the ES1ALHMHG, both measured at 4 V and 1 MHz.

Component selection between these two parts depends on circuit-specific requirements for switching speed and capacitive loading. Both parts are suitable for general-purpose rectification applications within the specified voltage and current ratings.

Frequently Asked Questions (FAQ)

Q: Can the HS1AL RVG be used as a direct replacement for the ES1ALHMHG?

A: Yes. Both parts share identical voltage ratings (50 V), current ratings (1 A), forward voltage characteristics (950 mV @ 1 A), package type (DO-219AB Sub SMA), operating temperature range (-55°C to 150°C), and automotive qualification (AEC-Q101). Both are Active product status components from the same manufacturer.

Q: What is the difference in reverse recovery time between these parts?

A: The ES1ALHMHG specifies 35 ns reverse recovery time, while the HS1AL RVG specifies 50 ns. Both values classify as Fast Recovery (≤ 500 ns for Io > 200 mA). The selection between these parts depends on circuit requirements for switching speed performance.

Q: Are there differences in capacitance specifications?

A: Yes. The ES1ALHMHG specifies 10 pF junction capacitance at 4 V and 1 MHz, while the HS1AL RVG specifies 20 pF under identical measurement conditions. This difference may affect high-frequency circuit performance and should be evaluated against specific application requirements.

Q: Do both parts meet automotive compliance requirements?

A: Yes. Both the ES1ALHMHG and HS1AL RVG carry automotive-grade classification with AEC-Q101 qualification. Both are ROHS3 compliant and REACH unaffected.

Q: What is the packaging difference between these parts?

A: Both parts use the DO-219AB Sub SMA surface mount package. The ES1ALHMHG is supplied in standard packaging, while the HS1AL RVG is supplied in Cut Tape (CT) packaging. Both are compatible with identical PCB footprints and assembly processes.

Q: Are there inventory considerations for these parts?

A: The ES1ALHMHG has 1168 pieces in stock, while the HS1AL RVG has 2549 pieces in stock. Both are listed as New Original inventory.

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