ES1AHM2G Equivalent & Substitute Parts

Part Overview

The ES1AHM2G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 50 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design requirements and production needs. The diode features fast recovery characteristics with a reverse recovery time of 35 nanoseconds and operates across a junction temperature range of -55°C to 150°C.

Substiute Parts

ES1AHM2G
Taiwan Semiconductor CorporationIn Stock: 762ES1AHM2G Datasheet
ES1AHM2G
Current Part
ES1A
YAGEOIn Stock: 80303ES1A Datasheet
ES1A
Parametric Equivalent
ES1AH
Taiwan Semiconductor CorporationIn Stock: 1141ES1AH Datasheet
ES1AH
Parametric Equivalent
CGRA4001-G
Comchip TechnologyIn Stock: 10292CGRA4001-G Datasheet
CGRA4001-G
Similar
ES1A-13-F
Diodes IncorporatedIn Stock: 70327ES1A-13-F Datasheet
ES1A-13-F
Similar
ES1A-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 20190ES1A-E3/5AT Datasheet
ES1A-E3/5AT
Similar
ES1A-LTP
Micro Commercial CoIn Stock: 5443ES1A-LTP Datasheet
ES1A-LTP
Similar
ES2A-LTP
Micro Commercial CoIn Stock: 6311ES2A-LTP Datasheet
ES2A-LTP
Similar
GS2A-LTP
Micro Commercial CoIn Stock: 1213GS2A-LTP Datasheet
GS2A-LTP
Similar
RS1A-13-F
Diodes IncorporatedIn Stock: 10435RS1A-13-F Datasheet
RS1A-13-F
Similar
RS1AB-13-F
Diodes IncorporatedIn Stock: 15312RS1AB-13-F Datasheet
RS1AB-13-F
Similar
S1A-13-F
Diodes IncorporatedIn Stock: 100403S1A-13-F Datasheet
S1A-13-F
Similar
S1AB-13-F
Diodes IncorporatedIn Stock: 39805S1AB-13-F Datasheet
S1AB-13-F
Similar
US1A-13-F
Diodes IncorporatedIn Stock: 25367US1A-13-F Datasheet
US1A-13-F
Similar
US1A-TP
Micro Commercial CoIn Stock: 4028US1A-TP Datasheet
US1A-TP
Similar
ES1A_R1_00001
Panjit International Inc.In Stock: 2372ES1A_R1_00001 Datasheet
ES1A_R1_00001
Parametric Equivalent
ES1AWG_R1_00001
Panjit International Inc.In Stock: 849ES1AWG_R1_00001 Datasheet
ES1AWG_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 1 A mV
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 50 V
Capacitance @ Vr, F 16 pF @ 4V, 1MHz
Package / Case DO-214AC, SMA
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the ES1AHM2G is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC, SMA (surface mount)
  • Operating Temperature - Junction: minimum -55°C, minimum 150°C upper limit
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Secondary Compatibility Factors:

  • Voltage - Forward (Vf) (Max) @ If: tolerance range 920 mV to 1.1 V @ 1 A
  • Speed Classification: Fast Recovery (≤ 500ns) or Standard Recovery (>500ns)
  • Reverse Recovery Time (trr): 25 ns to 35 ns for fast recovery devices
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V

Parts are classified as Parametric Equivalent when all primary criteria and secondary factors match the main part specifications. Parts are classified as Similar when primary criteria match but secondary factors (forward voltage, recovery speed, or recovery time) differ within acceptable operational ranges.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [mV] Speed trr [ns] Package Tj Range [°C] Product Status
ES1AHM2G Taiwan Semiconductor Corporation 50 1 950 @ 1 A Fast Recovery ≤ 500ns 35 DO-214AC (SMA) -55 to 150 Discontinued
ES1AH Taiwan Semiconductor Corporation 50 1 950 @ 1 A Fast Recovery ≤ 500ns 35 DO-214AC (SMA) -55 to 150 Active
ES1A YAGEO 50 1 950 @ 1 A DO-214AC (SMA) Active
ES1A-13-F Diodes Incorporated 50 1 920 @ 1 A Fast Recovery ≤ 500ns 25 DO-214AC (SMA) -55 to 150 Active
ES1A-E3/5AT Vishay General Semiconductor - Diodes Division 50 1 920 @ 1 A Fast Recovery ≤ 500ns 25 DO-214AC (SMA) -55 to 155 Active
ES1A-LTP Micro Commercial Co 50 1 950 @ 1 A Fast Recovery ≤ 500ns 35 DO-214AC (SMA) -65 to 175 Not For New Designs
CGRA4001-G Comchip Technology 50 1 1100 @ 1 A Standard Recovery >500ns DO-214AC (SMA) -55 to 150 Active
RS1A-13-F Diodes Incorporated 50 1 1300 @ 1 A Fast Recovery ≤ 500ns 150 DO-214AC (SMA) -65 to 150 Active
RS1AB-13-F Diodes Incorporated 50 1 1300 @ 1 A Fast Recovery ≤ 500ns 150 DO-214AA (SMB) -65 to 150 Active

Engineering Selection Recommendations

Parametric Equivalent - Recommended for Direct Substitution:

The ES1AH (Taiwan Semiconductor Corporation) is the primary parametric equivalent. This part maintains identical electrical specifications to the ES1AHM2G across all critical parameters: 50 V reverse voltage, 1 A average rectified current, 950 mV forward voltage at 1 A, 35 ns reverse recovery time, and identical operating temperature range (-55°C to 150°C). The ES1AH is currently Active in product status and carries ROHS3 compliance with MSL 1 rating. This part provides direct functional replacement without design modification.

Active Equivalent Options - Suitable for Substitution:

The ES1A-13-F (Diodes Incorporated) and ES1A-E3/5AT (Vishay General Semiconductor - Diodes Division) are active equivalent options. Both maintain the 50 V / 1 A rating and DO-214AC package. These parts feature improved fast recovery characteristics with 25 ns reverse recovery time (compared to 35 ns in the main part) and slightly lower forward voltage (920 mV at 1 A). The ES1A-E3/5AT extends the upper operating temperature to 155°C. Both parts are ROHS3 compliant with MSL 1 rating and suitable for new designs.

The ES1A (YAGEO) is an active parametric equivalent with high inventory availability (80,200 pieces). This part is ROHS3 compliant and MSL 1 rated, providing a cost-effective alternative with established supply chain presence.

Similar Parts - Application-Dependent Substitution:

The CGRA4001-G (Comchip Technology) maintains the 50 V / 1 A rating and DO-214AC package but features standard recovery characteristics (>500ns) with higher forward voltage (1.1 V at 1 A). This part is suitable for applications where recovery speed is not critical and forward voltage tolerance is acceptable.

The RS1A-13-F and RS1AB-13-F (Diodes Incorporated) maintain the 50 V / 1 A rating but exhibit significantly higher forward voltage (1.3 V at 1 A) and longer reverse recovery time (150 ns). The RS1AB-13-F uses a DO-214AA (SMB) package rather than DO-214AC (SMA), requiring PCB layout modification. These parts are suitable only for applications with relaxed recovery speed and forward voltage requirements.

Not Recommended for New Designs:

The ES1A-LTP (Micro Commercial Co) carries a "Not For New Designs" product status designation, despite meeting electrical specifications. This status indicates manufacturer discontinuation trajectory and should be avoided for new product development.

Frequently Asked Questions (FAQ)

Q: Can the ES1AH directly replace the ES1AHM2G without circuit modification?

A: Yes. The ES1AH is a parametric equivalent with identical voltage rating (50 V), current rating (1 A), forward voltage (950 mV @ 1 A), recovery time (35 ns), and operating temperature range (-55°C to 150°C). The part uses the same DO-214AC (SMA) package. Direct substitution is supported without design changes.

Q: What is the difference between the ES1A-13-F and the ES1AHM2G?

A: The ES1A-13-F maintains the same 50 V / 1 A rating and DO-214AC package but features improved fast recovery characteristics (25 ns versus 35 ns) and slightly lower forward voltage (920 mV versus 950 mV at 1 A). These differences represent performance improvements suitable for high-frequency switching applications. Both parts are ROHS3 compliant and MSL 1 rated.

Q: Why does the RS1AB-13-F have a different package designation (SMB instead of SMA)?

A: The RS1AB-13-F uses the DO-214AA (SMB) package, which is physically larger than the DO-214AC (SMA) package used in the ES1AHM2G. SMB packages have different pin spacing and footprint dimensions, requiring PCB layout modification. This part is not a direct mechanical substitute without redesign.

Q: Can I use the CGRA4001-G as a substitute?

A: The CGRA4001-G maintains the 50 V / 1 A rating and DO-214AC package but uses standard recovery technology (>500ns) with higher forward voltage (1.1 V at 1 A). Substitution is possible only in applications where fast recovery characteristics are not required and the higher forward voltage is acceptable within circuit design margins.

Q: What does "Not For New Designs" mean for the ES1A-LTP?

A: This product status indicates that the manufacturer is discontinuing the part and does not recommend its use in new product development. While the part may still be available in inventory, it should not be selected for designs intended for long-term production or future product generations.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All parts listed in this reference maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, consistent with the ES1AHM2G specifications.

Q: What is the significance of reverse recovery time in selecting a substitute?

A: Reverse recovery time (trr) determines how quickly the diode transitions from conducting to blocking state. Fast recovery devices (≤ 500ns, typically 25-35 ns) are required for high-frequency switching applications and power factor correction circuits. Standard recovery devices (>500ns) are suitable for lower-frequency rectification. The ES1AHM2G specifies 35 ns fast recovery; substitutes with 25 ns offer improved performance, while standard recovery parts require application-specific evaluation.

Q: Can forward voltage differences affect circuit performance?

A: Yes. Forward voltage differences directly impact voltage drop across the diode and power dissipation. The ES1AHM2G specifies 950 mV at 1 A. Substitutes with 920 mV (ES1A-13-F, ES1A-E3/5AT) reduce voltage drop by 30 mV, while parts with 1.1 V (CGRA4001-G) or 1.3 V (RS1A-13-F) increase voltage drop. Circuit design margins must accommodate these variations, particularly in low-voltage applications.

Request Quote (Ships tomorrow)