ER3D-TP Equivalent & Substitute Parts

Part Overview

The ER3D-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 200 V DC reverse voltage and 3 A average rectified current in a surface mount SMC (DO-214AB) package. This part is classified as Active and complies with ROHS3 standards. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required for design flexibility, supply chain alternatives, or specific application requirements within the same voltage and current ratings.

Substiute Parts

ER3D-TP
Micro Commercial CoIn Stock: 16893ER3D-TP Datasheet
ER3D-TP
Current Part
CURC303-G
Comchip TechnologyIn Stock: 4185CURC303-G Datasheet
CURC303-G
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ES3D
Diotec SemiconductorIn Stock: 131217ES3D Datasheet
ES3D
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ES3D-13-F
Diodes IncorporatedIn Stock: 45290ES3D-13-F Datasheet
ES3D-13-F
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ES3D-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 110462ES3D-E3/9AT Datasheet
ES3D-E3/9AT
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ES3DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1775ES3DHE3_A/H Datasheet
ES3DHE3_A/H
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ES3DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 55193ES3DHE3_A/I Datasheet
ES3DHE3_A/I
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ESH3DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 2671ESH3DHE3_A/H Datasheet
ESH3DHE3_A/H
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MURS320-13-F
Diodes IncorporatedIn Stock: 7725MURS320-13-F Datasheet
MURS320-13-F
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S3D-13-F
Diodes IncorporatedIn Stock: 295114S3D-13-F Datasheet
S3D-13-F
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STTH3R02S
STMicroelectronicsIn Stock: 10149STTH3R02S Datasheet
STTH3R02S
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STTH4R02S
STMicroelectronicsIn Stock: 17612STTH4R02S Datasheet
STTH4R02S
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STTH4R02SY
STMicroelectronicsIn Stock: 3203STTH4R02SY Datasheet
STTH4R02SY
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 3 A mV
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Mounting Type Surface Mount
Package / Case DO-214AB, SMC
Operating Temperature - Junction -50°C ~ 175°C °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the ER3D-TP are qualified based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3 A
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • RoHS Status: ROHS3 Compliant

Secondary Compatibility Factors:

  • Reverse Recovery Time (trr): Acceptable range 20 ns to 50 ns
  • Voltage - Forward (Vf) (Max) @ If: Acceptable range 875 mV to 1.0 V @ 3 A
  • Current - Reverse Leakage @ Vr: Acceptable range 3 µA to 10 µA @ 200 V
  • Operating Temperature - Junction: Minimum -50°C, Maximum 175°C

All substitute parts listed maintain the core electrical specifications and package compatibility required for direct replacement in applications designed for the ER3D-TP.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [mV] trr [ns] Ir @ Vr [µA] Tj (Max) [°C] Package Speed
ER3D-TP Micro Commercial Co 200 3 950 @ 3A 35 5 @ 200V 175 DO-214AB, SMC Fast Recovery ≤ 500ns
CURC303-G Comchip Technology 200 3 1000 @ 3A 50 5 @ 200V 150 DO-214AB, SMC Fast Recovery ≤ 500ns
ES3D Diotec Semiconductor 200 3 900 @ 3A 20 5 @ 200V 150 DO-214AB, SMC Fast Recovery ≤ 500ns
ES3D-13-F Diodes Incorporated 200 3 900 @ 3A 25 10 @ 200V 150 DO-214AB, SMC Fast Recovery ≤ 500ns
ES3D-E3/9AT Vishay General Semiconductor - Diodes Division 200 3 900 @ 3A 30 10 @ 200V 150 DO-214AB, SMC Fast Recovery ≤ 500ns
ES3DHE3_A/H Vishay General Semiconductor - Diodes Division 200 3 900 @ 3A 30 10 @ 200V 150 DO-214AB, SMC Fast Recovery ≤ 500ns
ES3DHE3_A/I Vishay General Semiconductor - Diodes Division 200 3 900 @ 3A 30 10 @ 200V 150 DO-214AB, SMC Fast Recovery ≤ 500ns
ESH3DHE3_A/H Vishay General Semiconductor - Diodes Division 200 3 900 @ 3A 40 5 @ 200V 175 DO-214AB, SMC Fast Recovery ≤ 500ns
MURS320-13-F Diodes Incorporated 200 3 875 @ 3A 25 5 @ 200V 175 DO-214AB, SMC Fast Recovery ≤ 500ns
S3D-13-F Diodes Incorporated 200 3 1150 @ 3A 10 @ 200V 150 DO-214AB, SMC Standard Recovery >500ns
STTH3R02S STMicroelectronics 200 3 1000 @ 3A 30 3 @ 200V 175 DO-214AB, SMC Fast Recovery ≤ 500ns

Engineering Selection Recommendations

Direct Substitutes (Preferred):

The following parts maintain full electrical and thermal compatibility with the ER3D-TP and are suitable for direct replacement:

  • MURS320-13-F (Diodes Incorporated): Matches forward voltage specification (875 mV vs. 950 mV), maintains fast recovery speed, and extends operating temperature range to 175°C. ROHS3 compliant.

  • ESH3DHE3_A/H (Vishay General Semiconductor - Diodes Division): Matches operating temperature range (-55°C ~ 175°C), maintains fast recovery speed, and provides automotive-grade qualification (AEC-Q101). ROHS3 compliant.

  • ES3D (Diotec Semiconductor): Provides superior reverse recovery time (20 ns vs. 35 ns), maintains fast recovery speed classification, and offers high inventory availability. ROHS3 compliant.

Secondary Substitutes (Application-Dependent):

The following parts meet core electrical specifications but with noted parameter variations:

  • ES3D-13-F (Diodes Incorporated): Fast recovery speed maintained, reverse recovery time 25 ns. Reverse leakage current elevated to 10 µA. Maximum junction temperature limited to 150°C. ROHS3 compliant.

  • ES3D-E3/9AT (Vishay General Semiconductor - Diodes Division): Fast recovery speed maintained, reverse recovery time 30 ns. Reverse leakage current elevated to 10 µA. Maximum junction temperature limited to 150°C. ROHS3 compliant.

  • ES3DHE3_A/I (Vishay General Semiconductor - Diodes Division): Automotive-grade qualification (AEC-Q101), fast recovery speed maintained. Reverse leakage current elevated to 10 µA. Maximum junction temperature limited to 150°C. ROHS3 compliant.

  • STTH3R02S (STMicroelectronics): Matches operating temperature range (175°C max), maintains fast recovery speed, and provides superior reverse leakage current (3 µA). ROHS3 compliant.

Limited Compatibility:

  • CURC303-G (Comchip Technology): Meets electrical specifications but maximum junction temperature limited to 150°C. Reverse recovery time extended to 50 ns. ROHS3 compliant.

  • S3D-13-F (Diodes Incorporated): Standard recovery speed (>500ns) differs from fast recovery classification. Forward voltage elevated to 1150 mV. Not recommended for applications requiring fast recovery characteristics.

Frequently Asked Questions (FAQ)

Q: Can I use S3D-13-F as a direct replacement for ER3D-TP?

A: S3D-13-F is not recommended as a direct replacement. While it maintains the 200 V / 3 A ratings and DO-214AB package, it uses standard recovery speed (>500ns) instead of fast recovery (≤500ns). Forward voltage is also elevated to 1150 mV compared to 950 mV. Applications requiring fast recovery characteristics will not function properly with this substitute.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes have reverse recovery times ≤500ns and are designed for high-frequency switching applications. Standard recovery diodes have reverse recovery times >500ns and are suitable for lower-frequency rectification. The ER3D-TP is classified as fast recovery; substitutes must maintain this classification unless the application permits standard recovery operation.

Q: Are automotive-grade parts (AEC-Q101) compatible with non-automotive applications?

A: Yes. Automotive-grade parts such as ES3DHE3_A/H and ES3DHE3_A/I meet or exceed the electrical specifications of the ER3D-TP and are fully compatible with non-automotive applications. Automotive qualification indicates additional quality and reliability testing but does not restrict use in other applications.

Q: Why do some substitutes have lower maximum junction temperatures?

A: Maximum junction temperature is a design characteristic of each manufacturer's process. Parts with 150°C maximum (such as ES3D-13-F and ES3D-E3/9AT) are suitable for applications where ambient and operating conditions do not exceed this limit. For applications requiring the full -50°C ~ 175°C range of the ER3D-TP, select substitutes with matching or higher temperature ratings.

Q: What is the significance of reverse leakage current variation?

A: Reverse leakage current (Ir) represents the small current flowing through the diode in reverse bias. The ER3D-TP specifies 5 µA @ 200 V. Substitutes with higher leakage (10 µA) are acceptable for most applications but may introduce slightly higher power dissipation in high-voltage, low-current circuits. STTH3R02S offers superior leakage performance at 3 µA.

Q: Can I substitute based on package type alone?

A: No. While all listed substitutes use the DO-214AB (SMC) package, electrical parameters must also be verified. Package compatibility is necessary but not sufficient for substitution. All electrical ratings, speed classification, and temperature range must be evaluated for the specific application.

Q: What packaging options are available for substitutes?

A: Substitutes are available in Tape & Reel (TR) and Cut Tape (CT) & Digi-Reel® formats. The ER3D-TP is supplied in Tape & Reel. Verify packaging format compatibility with your assembly process before selection.

Q: Is MURS320-13-F a better choice than ER3D-TP?

A: MURS320-13-F offers lower forward voltage (875 mV vs. 950 mV), which reduces power dissipation and heat generation. It maintains the full operating temperature range (-65°C ~ 175°C) and fast recovery speed. For applications sensitive to forward voltage drop or operating at elevated temperatures, MURS320-13-F is a suitable alternative.

Q: Are all listed substitutes ROHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant, matching the compliance status of the ER3D-TP. All parts are also REACH unaffected and classified as EAR99 for export control purposes.

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