ER2K Equivalent & Substitute Parts Reference

Part Overview

The ER2K is a superfast rectifier diode manufactured by Diotec Semiconductor, rated for 800 V DC reverse voltage with 2 A average rectified current. The device is packaged in DO-214AA (SMB) surface mount configuration and features fast recovery characteristics with a reverse recovery time of 75 ns. This component is currently active in production and maintains 1900 pieces in new original inventory stock.

Substitute parts are identified when design requirements permit higher current ratings, alternative compliance certifications, or when primary part availability becomes constrained. The ER2K operates across a junction temperature range of -50°C to 150°C and is suitable for general-purpose rectification applications requiring fast switching performance.

Substiute Parts

ER2K
Diotec SemiconductorIn Stock: 1970ER2K Datasheet
ER2K
Current Part
HS3KB R5G
Taiwan Semiconductor CorporationIn Stock: 1022HS3KB R5G Datasheet
HS3KB R5G
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 800 V
Current - Average Rectified (Io) 2 A
Voltage - Forward (Vf) (Max) @ If 1.7 @ 2 V @ A
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 800 V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Package / Case DO-214AA, SMB
Mounting Type Surface Mount
Operating Temperature - Junction -50 to 150 °C
Product Status Active

Substitute Part Grouping Explanation

Substitution of the ER2K is permissible when the following conditions are met:

Mandatory Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Package / Case: DO-214AA, SMB
  • Mounting Type: Surface Mount
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns

Allowable Variation Parameters:

  • Current - Average Rectified (Io): Equal to or greater than 2 A
  • Voltage - Forward (Vf) (Max): Equal to or less than 1.7 V at the substitute part's rated current
  • Current - Reverse Leakage @ Vr: Equal to or less than 5 µA @ 800 V
  • Operating Temperature - Junction: Range must encompass or exceed -50°C to 150°C

The HS3KB R5G manufactured by Taiwan Semiconductor Corporation qualifies as a direct substitute based on these criteria. This part maintains identical reverse voltage, package configuration, and recovery characteristics while offering increased current capacity of 3 A, making it suitable for applications where the ER2K current rating is marginal or where design margin is required.

Parameter Comparison

Parameter ER2K (Diotec) HS3KB R5G (Taiwan Semiconductor) Compatibility
Voltage - DC Reverse (Vr) (Max) 800 V 800 V Identical
Current - Average Rectified (Io) 2 A 3 A Substitute rated higher
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 2 A 1.7 V @ 3 A Equivalent at rated current
Reverse Recovery Time (trr) 75 ns 75 ns Identical
Current - Reverse Leakage @ Vr 5 µA @ 800 V 10 µA @ 800 V Substitute higher leakage
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Identical
Package / Case DO-214AA, SMB DO-214AA, SMB Identical
Mounting Type Surface Mount Surface Mount Identical
Operating Temperature - Junction -50 to 150°C -55 to 150°C Substitute range wider

Engineering Selection Recommendations

ER2K Selection Criteria: The ER2K remains the primary choice for applications where current demand is strictly limited to 2 A or below and where Diotec Semiconductor supply chain continuity is established. The part is active in production with substantial inventory availability (1900 pieces). RoHS compliance status is not applicable for this component.

HS3KB R5G Selection Criteria: The HS3KB R5G is suitable as a substitute when design specifications permit 3 A operation or when higher current margin is required. This part carries ROHS3 compliance certification and REACH unaffected status, providing enhanced environmental regulatory alignment. However, the HS3KB R5G is listed as discontinued at DiGi Electronics, indicating potential future supply constraints. The substitute exhibits higher reverse leakage current (10 µA versus 5 µA at 800 V), which may impact applications with stringent leakage requirements. The wider operating temperature range (-55°C to 150°C) provides additional thermal margin compared to the ER2K.

Compliance Considerations: Both parts share identical ECCN (EAR99) and HTSUS (8541.10.xxxx) classifications. The HS3KB R5G provides superior RoHS and REACH documentation, while the ER2K's compliance status is vendor-undefined. Selection should account for end-product regulatory requirements and supply chain documentation needs.

Frequently Asked Questions (FAQ)

Q: Can the HS3KB R5G directly replace the ER2K in existing designs?

A: Direct replacement is permissible when the application circuit can tolerate 3 A rated current and 10 µA reverse leakage current. The identical 800 V reverse voltage, DO-214AA package, 75 ns recovery time, and fast recovery classification ensure functional compatibility. PCB layout and thermal management remain unchanged due to identical package geometry.

Q: What is the primary difference between these two diodes?

A: The HS3KB R5G provides 50% higher current capacity (3 A versus 2 A) and operates across a wider temperature range (-55°C to 150°C versus -50°C to 150°C). The trade-off is doubled reverse leakage current (10 µA versus 5 µA at 800 V). Both devices maintain identical forward voltage drop and recovery characteristics.

Q: Are there package compatibility concerns?

A: No. Both the ER2K and HS3KB R5G use the DO-214AA (SMB) surface mount package. Footprint, solder pad configuration, and thermal characteristics are identical. No PCB redesign is required for substitution.

Q: Why is the HS3KB R5G listed as discontinued?

A: The HS3KB R5G is discontinued at DiGi Electronics, a specific distributor. This does not indicate manufacturer discontinuation. Taiwan Semiconductor Corporation may continue production through alternative distribution channels. Verify current availability through direct manufacturer contacts or secondary distributors before design commitment.

Q: How does reverse leakage current affect circuit performance?

A: Reverse leakage current flows when the diode is reverse-biased at 800 V. The ER2K exhibits 5 µA leakage while the HS3KB R5G exhibits 10 µA. In high-impedance circuits or precision applications, this difference may be significant. In standard rectification applications, both values are negligible.

Q: What compliance certifications should I verify for my application?

A: The HS3KB R5G carries ROHS3 compliance and REACH unaffected status. The ER2K compliance status is vendor-undefined. Confirm regulatory requirements for your end product and request formal compliance documentation from the selected manufacturer before production commitment.

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