EPC2018 GaNFET N-Channel 150V 12A Die - Equivalent & Substitute Parts

Part Overview

The EPC2018 is an N-Channel GaNFET (Gallium Nitride Field Effect Transistor) rated for 150V drain-to-source voltage with 12A continuous drain current at 25°C. This surface mount die package component is designed for high-efficiency switching applications requiring compact form factors and low on-resistance characteristics.

The EPC2018 is currently discontinued at DiGi Electronics. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and evaluate performance trade-offs for ongoing production and new design implementations.

Substiute Parts

EPC2018

EPCIn Stock: 922EPC2018 Datasheet

Current PartRFQ

EPC2010C

EPCIn Stock: 17649EPC2010C Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the EPC2018 GaNFET is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: Must be N-Channel
• Technology: Must be GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 150V
• Continuous Drain Current (Id): Substitute must equal or exceed 12A at 25°C
• On-Resistance (Rds On): Substitute must maintain equivalent or superior performance at specified gate voltage
• Gate Threshold Voltage (Vgs(th)): Must be compatible with 5V drive voltage
• Operating Temperature Range: Substitute must support minimum -40°C to 125°C

Mechanical Compatibility Criteria:

• Package Type: Die format required
• Mounting Type: Surface Mount
• Compliance: RoHS3 Compliant, REACH Unaffected

The EPC2010C qualifies as a substitute based on these parameters, with enhanced voltage and current ratings that provide design margin while maintaining the same die package format and GaNFET technology platform.

Parameter Comparison

Engineering Selection Recommendations

EPC2010C as Substitute for EPC2018:

The EPC2010C is a direct substitute for the discontinued EPC2018 within the same eGaN® product family. Both components share identical die package format, surface mount configuration, and GaNFET technology platform.

Electrical Performance: The EPC2010C provides enhanced electrical specifications: 200V Vdss (versus 150V), 22A continuous drain current (versus 12A), and reduced gate charge of 5.3 nC (versus 7.5 nC). The on-resistance specification of 25 mOhm is maintained at higher current levels (12A versus 6A), indicating improved performance density. Both devices operate with identical 5V drive voltage and 2.5V gate threshold voltage.

Thermal Performance: The EPC2010C supports an extended operating temperature range to 150°C (versus 125°C maximum for EPC2018), providing additional thermal margin for high-temperature applications.

Compliance and Availability: Both components maintain ROHS3 compliance, REACH unaffected status, and MSL 1 (unlimited) moisture sensitivity rating. The EPC2010C has significantly higher inventory availability (17,600 pieces) compared to the discontinued EPC2018 status. However, the EPC2010C is designated as "Not For New Designs" by the manufacturer, indicating potential future discontinuation.

Design Considerations: The EPC2010C is electrically and mechanically compatible with EPC2018 applications. The higher voltage and current ratings provide design margin without requiring circuit modifications. The reduced gate charge improves switching speed and reduces driver power dissipation. The extended temperature range supports broader operating environments.

Frequently Asked Questions (FAQ)

Q: Can the EPC2010C directly replace the EPC2018 in existing designs?

A: Yes. The EPC2010C is electrically and mechanically compatible with the EPC2018. Both components use identical die package format, surface mount configuration, and share the same 5V drive voltage and gate threshold characteristics. The EPC2010C's higher voltage and current ratings provide design margin without requiring circuit modifications.

Q: What are the key differences between EPC2018 and EPC2010C?

A: The EPC2010C provides enhanced specifications: 200V Vdss (versus 150V), 22A continuous drain current (versus 12A), reduced gate charge of 5.3 nC (versus 7.5 nC), and extended operating temperature to 150°C (versus 125°C). On-resistance remains at 25 mOhm but is specified at higher current levels, indicating improved performance density.

Q: Are there any compatibility concerns with the EPC2010C substitute?

A: No compatibility concerns exist for electrical or mechanical integration. Both components are GaNFET N-Channel devices in die package format with identical drive voltage requirements and gate threshold specifications. The EPC2010C's reduced gate charge may improve switching performance and reduce driver power dissipation compared to the original EPC2018.

Q: What is the product status of the EPC2010C?

A: The EPC2010C is designated as "Not For New Designs" by the manufacturer, indicating potential future discontinuation. However, current inventory availability is substantial at 17,600 pieces. For long-term production requirements, alternative GaNFET solutions from the current eGaN® product portfolio should be evaluated.

Q: Are compliance certifications identical between EPC2018 and EPC2010C?

A: Yes. Both components are ROHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited) moisture sensitivity rating. Both are classified under ECCN EAR99 and HTSUS 8541.29.0040.

Q: What is the package format for both components?

A: Both EPC2018 and EPC2010C are supplied as surface mount die packages. The EPC2010C is available in Cut Tape (CT) and Digi-Reel® packaging options, while the EPC2018 was discontinued. Die packages require specialized handling and assembly equipment for integration into hybrid circuits or custom modules.