EPC2012 GaNFET N-Channel 200V 3A Die Equivalent & Substitute Parts

Part Overview

The EPC2012 is an N-Channel GaNFET (Gallium Nitride Field Effect Transistor) rated for 200V drain-to-source voltage with 3A continuous drain current at 25°C. This surface mount die is part of EPC's eGaN® series and is designed for high-efficiency switching applications requiring compact form factors and low on-resistance characteristics.

The EPC2012 has been discontinued at DiGi Electronics. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

EPC2012
EPCIn Stock: 1157EPC2012 Datasheet
EPC2012
Current Part
EPC2012C
EPCIn Stock: 17725EPC2012C Datasheet
EPC2012C
Direct

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 3 A
On-Resistance (Rds On) @ 3A, 5V 100 mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA 2.5 V
Gate Charge (Qg) @ 5V 1.8 nC
Input Capacitance (Ciss) @ 100V 145 pF
Operating Temperature Range -40 to 125 °C
Technology GaNFET
Package Type Die

Substitute Part Grouping Explanation

Substitution eligibility for the EPC2012 is determined by the following critical parameters:

Voltage Rating: The substitute part must maintain the 200V Vdss specification to ensure safe operation within the same voltage domain.

Current Rating: The substitute part must support a continuous drain current equal to or greater than 3A at 25°C to handle the same load conditions.

On-Resistance: The substitute part must maintain the 100 mOhm Rds On specification at 3A and 5V gate drive to preserve switching efficiency and thermal characteristics.

Gate Threshold Voltage: The substitute part must maintain the 2.5V Vgs(th) specification to ensure compatible gate drive requirements.

Package Type: The substitute part must be supplied as a die in surface mount configuration to maintain mechanical and thermal interface compatibility.

Technology: The substitute part must utilize GaNFET technology to preserve the performance characteristics of the eGaN® series.

The EPC2012C qualifies as a direct substitute based on these parameters. While the EPC2012C offers enhanced specifications in certain areas (5A current rating, lower gate charge, extended temperature range), it maintains full backward compatibility with the EPC2012 in all critical substitution criteria.

Parameter Comparison

Parameter EPC2012 EPC2012C Unit
Manufacturer EPC EPC
Series eGaN® eGaN®
FET Type N-Channel N-Channel
Technology GaNFET GaNFET
Drain to Source Voltage (Vdss) 200 200 V
Continuous Drain Current (Id) @ 25°C 3 5 A
On-Resistance (Rds On) @ 3A, 5V 100 100 mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA 2.5 2.5 V
Gate Charge (Qg) @ 5V 1.8 1.3 nC
Input Capacitance (Ciss) @ 100V 145 140 pF
Operating Temperature Range -40 to 125 -40 to 150 °C
Mounting Type Surface Mount Surface Mount
Package / Case Die Die
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
Product Status Discontinued at DiGi Electronics Active

Engineering Selection Recommendations

EPC2012C as Primary Substitute

The EPC2012C is the direct manufacturer substitute for the discontinued EPC2012. Both parts are manufactured by EPC and share identical core electrical specifications: 200V Vdss, 100 mOhm Rds On at 3A and 5V gate drive, and 2.5V gate threshold voltage.

The EPC2012C maintains full compliance with ROHS3, REACH Unaffected, and MSL 1 (Unlimited) standards, ensuring regulatory and environmental compatibility with the original part.

The EPC2012C is currently in active production with 17,700 pieces in stock, providing reliable supply chain availability compared to the discontinued EPC2012 (1,057 pieces remaining).

Enhanced Specifications

The EPC2012C offers performance improvements over the EPC2012 without compromising backward compatibility:

The continuous drain current rating increases from 3A to 5A, providing additional current handling capacity for the same thermal and electrical footprint.

Gate charge reduces from 1.8 nC to 1.3 nC, resulting in lower switching losses and improved efficiency in high-frequency applications.

Operating temperature range extends from 125°C to 150°C maximum junction temperature, enabling operation in higher ambient or junction temperature environments.

Input capacitance decreases marginally from 145 pF to 140 pF, contributing to faster switching transitions.

Compliance and Certification

Both parts carry identical regulatory certifications: ROHS3 Compliant, REACH Unaffected status, and ECCN EAR99 classification. No additional compliance verification is required when transitioning from EPC2012 to EPC2012C.

Both parts maintain MSL 1 (Unlimited) moisture sensitivity level, indicating no moisture-related handling restrictions during storage, transport, or assembly.

Frequently Asked Questions (FAQ)

Q: Can the EPC2012C directly replace the EPC2012 in existing designs?

A: Yes. The EPC2012C maintains identical electrical specifications for all critical parameters: 200V Vdss, 100 mOhm Rds On at 3A and 5V, and 2.5V gate threshold voltage. Both parts are N-Channel GaNFETs supplied as surface mount dies with identical package configurations. No circuit modifications are required.

Q: What are the key differences between EPC2012 and EPC2012C?

A: The EPC2012C offers three enhancements: increased continuous drain current rating (5A versus 3A), reduced gate charge (1.3 nC versus 1.8 nC), and extended operating temperature range (-40°C to 150°C versus -40°C to 125°C). On-resistance, voltage rating, and gate threshold voltage remain identical.

Q: Why is the EPC2012 discontinued?

A: The EPC2012 has been discontinued at DiGi Electronics. The EPC2012C represents the current production equivalent from the manufacturer, offering improved specifications while maintaining full backward compatibility.

Q: Are there any thermal or mechanical considerations when substituting EPC2012 with EPC2012C?

A: Both parts are supplied as dies with identical package types and mounting configurations. Thermal and mechanical interfaces remain unchanged. The extended temperature range of the EPC2012C (150°C versus 125°C) provides additional margin in high-temperature applications but does not alter thermal interface requirements.

Q: What is the inventory status for substitution?

A: The EPC2012 has 1,057 pieces remaining in stock. The EPC2012C is in active production with 17,700 pieces in stock, ensuring reliable supply availability for new orders and production continuity.

Q: Do both parts require the same gate drive voltage?

A: Yes. Both the EPC2012 and EPC2012C specify 5V gate drive for maximum on-resistance performance. Gate threshold voltage is identical at 2.5V @ 1mA. Maximum gate voltage ratings differ slightly (EPC2012: +6V/-5V; EPC2012C: +6V/-4V), but standard 5V gate drive circuits are compatible with both parts.

Q: Are there any compliance or certification differences?

A: No. Both parts carry identical regulatory certifications: ROHS3 Compliant, REACH Unaffected, MSL 1 (Unlimited), and ECCN EAR99 classification. No additional compliance documentation or verification is required when substituting EPC2012 with EPC2012C.

Q: What is the base product number for both parts?

A: Both the EPC2012 and EPC2012C share the base product number EPC20, indicating they are part of the same product family within EPC's eGaN® GaNFET series.

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