Equivalent & Substitute Parts for EMX52T2R

Part Overview

EMX52T2R is a dual NPN Bipolar Junction Transistor (BJT) array manufactured by Rohm Semiconductor, categorized under Transistors, Bipolar (BJT), and designed for surface mount applications (SOT-563/SOT-666, EMT6). It is intended for signal amplification and switching, supporting a collector current up to 100mA, a collector-emitter voltage up to 50V, and a transition frequency of 350MHz. The product is currently in active production status with 4972 units in stock.

The need to identify alternative models arises from inventory limitations, procurement flexibility, or supply chain management for assemblies requiring 2 NPN (Dual) arrays with similar electrical and mechanical parameters.

Substiute Parts

EMX52T2R
Rohm SemiconductorIn Stock: 5080EMX52T2R Datasheet
EMX52T2R
Current Part
BC847BV-TP
Micro Commercial CoIn Stock: 9757BC847BV-TP Datasheet
BC847BV-TP
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BC847BVC-7
Diodes IncorporatedIn Stock: 71004BC847BVC-7 Datasheet
BC847BVC-7
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CMLT5088E TR PBFREE
Central Semiconductor CorpIn Stock: 15292CMLT5088E TR PBFREE Datasheet
CMLT5088E TR PBFREE
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CMLT5088EM TR PBFREE
Central Semiconductor CorpIn Stock: 3113CMLT5088EM TR PBFREE Datasheet
CMLT5088EM TR PBFREE
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EMX1DXV6T5G
onsemiIn Stock: 10421EMX1DXV6T5G Datasheet
EMX1DXV6T5G
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Key Parameters

Parameter Value
Manufacturer Part Number EMX52T2R
Manufacturer Rohm Semiconductor
Category Transistors, Bipolar (BJT)
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V
Power - Max 150mW
Frequency - Transition 350MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package EMT6
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected

Substitute Part Grouping Explanation

Substitute part selection for the EMX52T2R is strictly based on:

  • Transistor Type (2 NPN Dual)
  • Maximum Collector Current (Ic)
  • Maximum Collector-Emitter Breakdown Voltage (Vce)
  • Vce Saturation
  • Maximum Collector Cutoff Current (ICBO)
  • Minimum DC Current Gain (hFE)
  • Maximum Power Dissipation
  • Transition Frequency
  • Package Compatibility (SOT-563, SOT-666, EMT6)
  • Mounting Type (Surface Mount)
  • Environmental Compliance (RoHS, REACH)
  • Moisture Sensitivity Level (MSL)
  • Operating Temperature Range

These parameters ensure the substitute transistors are functionally and mechanically compatible with designs using EMX52T2R.

Parameter Comparison

Manufacturer Part Number Manufacturer Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Operating Temperature Mounting Type Package / Case Supplier Device Package RoHS Status MSL REACH Status
EMX52T2R Rohm Semiconductor 2 NPN (Dual) 100mA 50V 300mV @ 5mA, 50mA 100nA (ICBO) 120 @ 1mA, 6V 150mW 350MHz 150°C (TJ) Surface Mount SOT-563, SOT-666 EMT6 ROHS3 Compliant 1 (Unlimited) REACH Unaffected
BC847BV-TP Micro Commercial Co 2 NPN (Dual) 100mA 45V 300mV @ 5mA, 100mA 15nA (ICBO) 200 @ 2mA, 5V 150mW 100MHz -55°C ~ 150°C (TJ) Surface Mount SOT-563, SOT-666 SOT-563 ROHS3 Compliant 1 (Unlimited) REACH Unaffected
BC847BVC-7 Diodes Incorporated 2 NPN (Dual) 100mA 45V 300mV @ 5mA, 100mA 15nA (ICBO) 200 @ 2mA, 5V 150mW 100MHz -55°C ~ 150°C (TJ) Surface Mount SOT-563, SOT-666 SOT-563 ROHS3 Compliant 1 (Unlimited) REACH Unaffected
CMLT5088E TR PBFREE Central Semiconductor Corp 2 NPN (Dual) 100mA 50V 400mV @ 10mA, 100mA 50nA (ICBO) 300 @ 100µA, 5V 350mW 100MHz -65°C ~ 150°C (TJ) Surface Mount SOT-563, SOT-666 SOT-563 ROHS3 Compliant 1 (Unlimited) REACH Unaffected
CMLT5088EM TR PBFREE Central Semiconductor Corp 2 NPN (Dual) 100mA 50V 400mV @ 10mA, 100mA 50nA (ICBO) 300 @ 10mA, 5V 350mW 100MHz -65°C ~ 150°C (TJ) Surface Mount SOT-563, SOT-666 SOT-563 ROHS3 Compliant 1 (Unlimited) REACH Unaffected
EMX1DXV6T5G onsemi 2 NPN (Dual) 100mA 50V 400mV @ 5mA, 50mA 500nA (ICBO) 120 @ 1mA, 6V 500mW 180MHz -55°C ~ 150°C (TJ) Surface Mount SOT-563, SOT-666 SOT-563 ROHS3 Compliant 1 (Unlimited) REACH Unaffected

Engineering Selection Recommendations

All listed substitute parts are RoHS3 compliant, REACH unaffected, MSL 1 (unlimited), and classified under the same ECCN and HTSUS. Substitute selection for EMX52T2R should consider product status. EMX1DXV6T5G is marked as obsolete; all other listed substitutes are active.

Frequently Asked Questions (FAQ)

Q1: Which package styles are compatible with EMX52T2R?
A1: Suitable packages include SOT-563, SOT-666, and EMT6 for surface mount applications.

Q2: What electrical criteria must be matched for a valid substitute?
A2: Substitutes must match transistor type (2 NPN Dual), collector current, collector-emitter breakdown voltage, Vce saturation, DC gain, power dissipation, and transition frequency.

Q3: How does environmental compliance affect part selection?
A3: Parts must be ROHS3 compliant, REACH unaffected, and meet MSL 1 for compatibility with environmentally regulated manufacturing processes.

Q4: Are obsolete models suitable as direct replacements?
A4: Substitutes with "active" product status are preferred over any marked "obsolete" for continuity of supply.

Q5: Do all substitutes have the same mounting and mechanical compatibility?
A5: All substitutes listed are for surface mount applications and specified with industry-standard SOT-563/SOT-666 compatibility.

Q6: Is transition frequency a critical selection factor?
A6: Transition frequency is a matching parameter; select substitutes that provide equal or suitable transition frequency for the application environment as per the provided values.

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