Equivalent & Substitute Parts for EMX3T2R – Bipolar (BJT) Transistor Array (Rohm Semiconductor)

Part Overview

EMX3T2R from Rohm Semiconductor is a Bipolar (BJT) Transistor Array consisting of 2 NPN (Dual) transistors, operating up to 50V collector-emitter voltage and 150mA collector current. The part features 180MHz transition frequency and is supplied in a surface-mount EMT6 package (compatible with SOT-563, SOT-666 case outlines). This product is currently active, ROHS3 compliant, and REACH unaffected.

Due to market dynamics, supply chain optimization, or specific project requirements, engineers may need to identify equivalent or substitute transistor array models meeting identical or highly similar functional and mechanical parameters.

Key Parameters

Parameter	EMX3T2R Value	Category Relevance
Transistor Type	2 NPN (Dual)	Core Functional Description
Current - Collector (Ic) (Max)	150mA	Maximum Load Current
Voltage - Collector Emitter Breakdown (Max)	50V	Maximum Operating Voltage
Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 50mA	Saturation Voltage
Current - Collector Cutoff (Max)	100nA (ICBO)	Leakage Characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V	Gain Performance
Power - Max	150mW	Power Handling
Frequency - Transition	180MHz	Frequency Response
Mounting Type / Package	Surface Mount / SOT-563, SOT-666, EMT6	Mechanical Compatibility
Operating Temperature (TJ)	150°C	Thermal Tolerance
RoHS / REACH / ECCN	ROHS3 Compliant, REACH Unaffected, EAR99	Compliance / Certification

Substitute Part Grouping Explanation

Substitute selection for Bipolar (BJT) Transistor Arrays is strictly limited to products matching the following parameters: Transistor Type (2 NPN Dual), Maximum Collector Current (Ic), Maximum Collector-Emitter Breakdown Voltage (Vce), Saturation Voltage, Collector Cutoff Current, Minimum DC Current Gain (hFE), Power Dissipation, Transition Frequency (ft), Mounting Type, Package Outline, Operating Temperature, and compliance attributes (RoHS, REACH, ECCN).

Only parts matching all or substantially equal electrical and mechanical specifications are considered as valid substitutes.

Parameter Comparison

Parameter	EMX3T2R	EMX1T2R	EMX1DXV6T1G
Manufacturer	Rohm Semiconductor	Rohm Semiconductor	onsemi
Transistor Type	2 NPN (Dual)	2 NPN (Dual)	2 NPN (Dual)
Current - Collector (Ic) (Max)	150mA	150mA	100mA
Voltage - Collector Emitter Breakdown (Max)	50V	50V	50V
Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 50mA	400mV @ 5mA, 50mA	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) (ICBO)	100nA	100nA	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V	120 @ 1mA, 6V	120 @ 1mA, 6V
Power - Max	150mW	150mW	500mW
Frequency - Transition (ft)	180MHz	180MHz	180MHz
Operating Temperature (TJ)	150°C	150°C	-55°C ~ 150°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99	EAR99
Product Status	Active	Active	Active

Engineering Selection Recommendations

All listed substitute part numbers—EMX1T2R (Rohm Semiconductor), and EMX1DXV6T1G (onsemi)—are active and meet the provided ROHS3, REACH, and ECCN compliance requirements. These substitutes are suitable for applications governed by strict certification and status criteria.

Frequently Asked Questions (FAQ)

Q: What electrical parameters must match for a valid substitute in BJT transistor arrays?
A: Required matching parameters include: transistor type, maximum collector current, maximum collector-emitter breakdown voltage, saturation voltage, collector cutoff current, DC current gain, power dissipation, and transition frequency.

Q: Are package and mounting types critical when selecting a substitute?
A: Yes, all substitutes must conform to identical or compatible package outlines (SOT-563, SOT-666, EMT6) and support surface mount installation.

Q: Is environmental compliance (RoHS/REACH) mandatory for substitution?
A: For many regulated applications, ROHS3 compliance and REACH unaffected status are mandatory and are fully met by the listed substitutes.

Q: Can the substitute part have a higher power dissipation rating?
A: The substitute EMX1DXV6T1G has a power rating of 500mW, which is higher than the main part. Provided all other key parameters are met, a higher rating is within acceptable substitution criteria if supported by application requirements.

Q: Are substitutes from different manufacturers considered equivalent?
A: Substitution is valid provided all specified electrical, mechanical, and compliance parameters match, regardless of manufacturer.

Q: Is the operating temperature range fully compatible among the listed substitutes?
A: All substitutes feature a maximum junction temperature of 150°C, conforming to the main part’s requirements.

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