EMT3T2R Equivalent & Substitute Parts Reference

Part Overview

The Rohm Semiconductor EMT3T2R is a Bipolar Junction Transistor (BJT) array featuring two PNP transistors (dual), housed in a SOT-563/SOT-666 surface mount package. This component is actively manufactured and compliant with ROHS3, REACH, and other global standards. The key parameters for substitution include transistor type, maximum collector current and voltage, DC current gain, frequency, cutoff current, power dissipation, saturation voltage, package type, and compliance certifications. Finding alternative models is essential for managing supply chain risks and ensuring continuous availability for designs utilizing transistor arrays within these specified parameters.

Substiute Parts

EMT3T2R
Rohm SemiconductorIn Stock: 21361EMT3T2R Datasheet
EMT3T2R
Current Part
EMT1T2R
Rohm SemiconductorIn Stock: 85483EMT1T2R Datasheet
EMT1T2R
Similar
HN1A01FE-Y,LF
Toshiba Semiconductor and StorageIn Stock: 5206HN1A01FE-Y,LF Datasheet
HN1A01FE-Y,LF
Similar

Key Parameters

Parameter EMT3T2R Value Notes
Transistor Type 2 PNP (Dual) Transistor array configuration
Current - Collector (Ic) (Max) 150mA Maximum collector current
Voltage - Collector Emitter Breakdown (Max) 50V Maximum collector-emitter voltage
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA Collector-emitter saturation voltage
Current - Collector Cutoff (Max) 100nA (ICBO) Maximum collector cutoff current
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V Minimum hFE at specified conditions
Power - Max 150mW Maximum power dissipation
Frequency - Transition 140MHz Gain bandwidth product
Operating Temperature 150°C (TJ) Maximum junction temperature
Mounting Type Surface Mount PCB mounting style
Package / Case SOT-563, SOT-666 Physical package type
Supplier Device Package EMT6 Device footprint
RoHS Status ROHS3 Compliant Environmental compliance
REACH Status REACH Unaffected Environmental compliance
Product Status Active Availability

Substitute Part Grouping Explanation

Substitute parts have been selected based on strict correspondence to the following key electrical, mechanical, and compliance parameters: transistor type and array configuration, maximum collector current, collector-emitter breakdown voltage, DC current gain, cutoff current, power dissipation, saturation voltage, transition frequency, operating temperature, surface mount package compatibility, RoHS/REACH compliance, and active product status. Only parts matching all critical attributes within the same component category (Transistors, Bipolar (BJT), dual PNP, SOT-563/SOT-666/EMT6/ES6 footprints) are included as equivalents or substitutes.

Parameter Comparison

Parameter EMT3T2R (Rohm) EMT1T2R (Rohm) HN1A01FE-Y,LF (Toshiba)
Transistor Type 2 PNP (Dual) 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 150mA 150mA 150mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA 500mV @ 5mA, 50mA 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V 120 @ 1mA, 6V 120 @ 2mA, 6V
Power - Max 150mW 150mW 100mW
Frequency - Transition 140MHz 140MHz 80MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package EMT6 EMT6 ES6
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
Product Status Active Active Active

Engineering Selection Recommendations

The EMT3T2R, EMT1T2R, and HN1A01FE-Y,LF transistor arrays are all listed as active products with ROHS3 and REACH compliance. These substitute parts are suitable for direct selection when supply chain flexibility is required, as they fulfill all stated compliance and status requirements for ongoing engineering use and regulatory conformity.

Frequently Asked Questions (FAQ)

Q: What criteria are used to determine substitute parts for EMT3T2R?
A: Substitute parts are selected strictly based on equivalent electrical ratings (transistor configuration, collector current, collector-emitter voltage, DC current gain, cutoff current, dissipation, transition frequency), mechanical compatibility (surface mount type, SOT-563/SOT-666/EMT6/ES6 package), and environmental compliance (RoHS, REACH).

Q: Are there differences in package or form factor among substitutes?
A: All listed substitutes share SOT-563/SOT-666 compatible package types with equivalent mounting modes (surface mount). Supplier device packages are EMT6 for Rohm and ES6 for Toshiba.

Q: How should I choose between EMT1T2R and HN1A01FE-Y,LF?
A: Selection should be made based on matching electrical parameters, package compatibility, and required compliance for the specific application. Refer to the provided comparison table for parameter matching.

Q: Do all substitutes meet current environmental and safety standards?
A: Yes, all listed substitute transistor arrays are ROHS3 compliant and REACH unaffected.

Q: Is the performance (frequency, gain, power) the same across all substitutes?
A: The electrical parameters are provided in the comparison table. For parameters that differ, refer to the table to ensure suitability for the intended design.

Q: Are all parts active and available for ongoing procurement?
A: All parts listed have active product status based on provided information.

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