EMH52T2R Equivalent & Substitute Parts

Part Overview

The EMH52T2R is a pre-biased dual NPN bipolar junction transistor (BJT) manufactured by Rohm Semiconductor. This surface mount component operates at 50V maximum collector-emitter breakdown voltage with a maximum collector current of 100mA and transition frequency of 250MHz. The device integrates internal base and emitter-base resistors (47kOhms each) for simplified circuit design and reduced component count in digital switching applications.

The EMH52T2R is classified as an active product with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1). Equivalent and substitute parts are necessary when the primary part experiences supply constraints, extended lead times, or when design requirements permit functional alternatives with compatible electrical and mechanical characteristics.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 NPN - Pre-Biased (Dual)	—
Maximum Collector Current (Ic)	100	mA
Collector-Emitter Breakdown Voltage (VCEO)	50	V
Base Resistor (R1)	47	kOhms
Emitter-Base Resistor (R2)	47	kOhms
DC Current Gain (hFE) @ Ic, Vce	80 @ 5mA, 10V	—
Vce Saturation (Max) @ Ib, Ic	150	mV @ 500µA, 5mA
Collector Cutoff Current (Max)	500	nA
Transition Frequency	250	MHz
Maximum Power Dissipation	150	mW
Package Type	SOT-563, SOT-666	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the EMH52T2R is determined by strict alignment of electrical and mechanical parameters. The following criteria establish functional equivalence:

Primary Substitution Criteria:

Transistor configuration: 2 NPN - Pre-Biased (Dual) or 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum collector current: 100mA
Collector-emitter breakdown voltage: 50V
Base resistor value: 47kOhms
Emitter-base resistor value: 47kOhms
DC current gain (hFE): minimum 80 at specified test conditions
Collector cutoff current: 500nA or lower
Transition frequency: 250MHz or higher (when specified)
Maximum power dissipation: 150mW or greater
Package compatibility: SOT-563 or SOT-666
Surface mount configuration

Secondary Considerations:

Vce saturation characteristics
RoHS3 compliance
Moisture sensitivity level (MSL 1)
Product status (Active preferred; Not For New Designs acceptable; Obsolete not recommended)

Parts meeting all primary criteria are classified as direct substitutes. Parts with enhanced power ratings (500mW) or alternative transistor configurations (NPN/PNP combinations) are classified as functional alternatives with design flexibility.

Parameter Comparison

Parameter	EMH52T2R (Rohm)	DCX144EH-7 (Diodes)	NSBC144EDXV6T1G (onsemi)	RN4984FE,LF(CT (Toshiba)	PEMD12,115 (NXP)	PEMD12,315 (Nexperia)	PEMH2,115 (Nexperia)
Transistor Type	2 NPN	1 NPN, 1 PNP	2 NPN	1 NPN, 1 PNP	1 NPN, 1 PNP	1 NPN, 1 PNP	2 NPN
Ic (Max) [mA]	100	100	100	100	100	100	100
VCEO (Max) [V]	50	50	50	50	50	50	50
R1 [kOhms]	47	47	47	47	47	47	47
R2 [kOhms]	47	47	47	47	47	47	47
hFE (Min) @ Ic, Vce	80 @ 5mA, 10V	68 @ 5mA, 5V	80 @ 5mA, 10V	80 @ 10mA, 5V	80 @ 5mA, 5V	80 @ 5mA, 5V	80 @ 5mA, 5V
Vce Sat (Max) [mV]	150 @ 500µA, 5mA	300 @ 500µA, 10mA	250 @ 300µA, 10mA	300 @ 250µA, 5mA	150 @ 500µA, 10mA	150 @ 500µA, 10mA	150 @ 500µA, 10mA
ICBO (Max) [nA]	500	500	500	100	1000	1000	1000
Frequency - Transition [MHz]	250	250	—	250	—	—	—
Power - Max [mW]	150	150	500	100	300	300	300
Package	SOT-563, SOT-666	SOT-563	SOT-563	ES6	SOT-666	SOT-666	SOT-666
Product Status	Active	Active	Active	Active	Active	Not For New Designs	Not For New Designs
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3
MSL	1	1	1	1	1	1	1

Engineering Selection Recommendations

Direct Substitutes (Preferred for New Designs):

The NSBC144EDXV6T1G (onsemi) is the primary direct substitute for the EMH52T2R. Both devices feature identical 2 NPN pre-biased dual transistor configuration, 100mA maximum collector current, 50V breakdown voltage, and 47kOhms internal resistor values. The NSBC144EDXV6T1G provides enhanced power dissipation capability (500mW versus 150mW), ensuring superior thermal performance in high-current switching applications. The device maintains ROHS3 compliance, MSL 1 rating, and active product status. The SOT-563 package is mechanically compatible with the EMH52T2R.

Functional Alternatives (Configuration Flexibility):

The DCX144EH-7 (Diodes Incorporated) and RN4984FE,LF(CT (Toshiba Semiconductor) provide 1 NPN, 1 PNP pre-biased dual transistor configurations. These alternatives maintain electrical parameter alignment (100mA Ic, 50V VCEO, 47kOhms resistors, 250MHz transition frequency) while offering complementary transistor pairs for applications requiring both NPN and PNP switching functions. Both devices are active products with ROHS3 compliance and MSL 1 rating. The RN4984FE,LF(CT exhibits superior collector cutoff current performance (100nA versus 500nA), reducing leakage in precision switching circuits.

Enhanced Power Rating Alternative:

The PEMD12,115 and PEMD12,315 (NXP/Nexperia) offer 1 NPN, 1 PNP configurations with 300mW power dissipation (double the EMH52T2R rating). These devices maintain all critical electrical parameters and are available in SOT-666 package format. PEMD12,315 carries "Not For New Designs" status; PEMD12,115 remains active. Both provide ROHS3 compliance and MSL 1 rating.

The PEMH2,115 (Nexperia) matches the EMH52T2R's 2 NPN configuration with 300mW power rating and SOT-666 package compatibility. This device carries "Not For New Designs" status but remains available for legacy system support.

Obsolete Part Consideration:

The NSBC144EDXV6T5G (onsemi) is classified as obsolete and is not recommended for new designs despite electrical parameter compatibility. Existing inventory (7050 units) may support legacy production requirements only.

Frequently Asked Questions (FAQ)

Q: Can the DCX144EH-7 replace the EMH52T2R in all applications?

A: The DCX144EH-7 provides functional substitution with electrical parameter compatibility. However, the transistor configuration differs: DCX144EH-7 integrates 1 NPN and 1 PNP transistor pair, while EMH52T2R contains 2 NPN transistors. Circuit designs utilizing both NPN and PNP functions benefit from this configuration. Designs requiring dual NPN switching require the NSBC144EDXV6T1G or PEMH2,115 instead.

Q: What is the significance of the 500mW power rating on the NSBC144EDXV6T1G?

A: The NSBC144EDXV6T1G provides 500mW maximum power dissipation compared to the EMH52T2R's 150mW rating. This enhanced thermal capability accommodates higher continuous current or duty cycle applications without exceeding junction temperature limits. The device remains electrically compatible across all switching parameters.

Q: Are SOT-563 and SOT-666 packages interchangeable?

A: SOT-563 and SOT-666 are distinct surface mount packages with different pin configurations and footprints. PCB layout modifications are required when transitioning between packages. The EMH52T2R is available in both package options; substitute selection must match the target package requirement.

Q: Why do some substitute parts show lower transition frequency specifications?

A: The PEMD12,115, PEMD12,315, and PEMH2,115 do not specify transition frequency in the provided data. These devices maintain 250MHz or higher performance through design but do not publish this parameter in standard datasheets. Electrical performance remains compatible with the EMH52T2R's 250MHz specification for digital switching applications.

Q: What does "Not For New Designs" product status mean?

A: "Not For New Designs" indicates the manufacturer no longer recommends these parts for new circuit development. PEMD12,315 and PEMH2,115 carry this status but remain available for existing production support and legacy system maintenance. Active product alternatives (NSBC144EDXV6T1G, DCX144EH-7, RN4984FE,LF(CT) are preferred for new designs.

Q: How do internal resistor values affect substitution compatibility?

A: The internal base resistor (R1) and emitter-base resistor (R2) determine switching speed and input impedance characteristics. All listed substitutes maintain 47kOhms for both R1 and R2, ensuring identical biasing behavior and circuit performance. Deviations from these values require circuit redesign and are not acceptable substitutes.

Q: Is the RN4904FE,LF(CT a suitable substitute?

A: The RN4904FE,LF(CT is not listed as a direct substitute in the provided data. While it shares similar electrical characteristics (1 NPN, 1 PNP configuration, 100mA Ic, 50V VCEO, 47kOhms resistors), it is not included in the qualified substitute list and should not be selected without additional design verification.

Q: What compliance certifications apply to all substitute parts?

A: All listed substitute parts maintain ROHS3 compliance and MSL 1 (unlimited moisture sensitivity) rating, matching the EMH52T2R's environmental and regulatory status. REACH compliance is confirmed for all active products. ECCN classification (EAR99) and HTSUS codes are consistent across the substitute group.

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