EMH3T2R Equivalent & Substitute Parts Reference

Part Overview

The EMH3T2R from Rohm Semiconductor is a pre-biased bipolar transistor (BJT) comprising 2 NPN devices in a dual configuration. It is designed for surface-mount applications and is supplied in an EMT6 package (equivalent to SOT-563, SOT-666). The device features key parameters such as a maximum collector current of 100mA, a collector-emitter voltage of 50V, a minimum DC current gain (hFE) of 100, and a transition frequency of 250MHz. This model is currently active. Identifying substitute models is essential for supply chain robustness, design resilience, and second-sourcing, especially when considering inventory fluctuations or lifecycle changes of the original part.

Substiute Parts

EMH3T2R

Rohm SemiconductorIn Stock: 106694EMH3T2R Datasheet

Current PartRFQ

PEMD6,115

Nexperia USA Inc.In Stock: 4789PEMD6,115 Datasheet

SimilarRFQ

RN1910FE,LF(CT

Toshiba Semiconductor and StorageIn Stock: 5575RN1910FE,LF(CT Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Direct substitution within the transistors, bipolar (BJT), pre-biased, dual NPN category is based strictly on matching or exceeding the following key parameters: transistor type, maximum collector current, maximum collector-emitter voltage, base resistor value, minimum DC current gain, maximum Vce saturation, transition frequency, maximum power dissipation, surface-mount compatibility, package / case, compliance certifications (RoHS, MSL, REACH), and product availability status.

Parameter Comparison

Engineering Selection Recommendations

For engineering selection, both EMH3T2R and RN1910FE,LF(CT are listed as active products, fully RoHS3 compliant, and have a Moisture Sensitivity Level (MSL) of 1 (unlimited), as well as REACH unaffected certification. PEMD6,115 is not for new designs. Only models with matching product status and full compliance should be selected for ongoing or new applications.

Frequently Asked Questions (FAQ)

Q1. What are the strict substitution criteria for the EMH3T2R?
A1. Substitution requires identical or superior spec in transistor type (dual NPN, or at minimum dual pre-biased operation), maximum collector current, voltage ratings, base resistor values, surface-mount package compatibility, and environmental compliance.

Q2. Is package compatibility assured among listed substitutes?
A2. All compared substitutes use SOT-563 or SOT-666 (or compatible equivalents such as EMT6, ES6), which ensures surface-mount footprint compatibility within this product group.

Q3. Are supply chain and compliance considerations met?
A3. Both the EMH3T2R and RN1910FE,LF(CT are RoHS3 compliant, MSL 1 (unlimited), and REACH unaffected. PEMD6,115 shares compliance but is not for new designs.

Q4. Is there a difference in transistor type among substitutes?
A4. PEMD6,115 contains 1 NPN and 1 PNP device, while EMH3T2R and RN1910FE,LF(CT use two NPN devices in dual configuration. Application requirements must match the transistor type.

Q5. Do all substitutes meet or exceed the electrical ratings of the main part?
A5. Maximum collector current, collector-emitter voltage, and base resistor values are identical in all parts. Secondary characteristics, such as DC gain or power dissipation, may vary and must be matched to application needs using only supplied data.