EMH2801-TL-H Equivalent & Substitute Parts

Part Overview

The EMH2801-TL-H is a P-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 3A continuous drain current at 25°C. This device features an isolated Schottky diode and is housed in an 8-SMD flat lead surface mount package. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Substiute Parts

EMH2801-TL-H
onsemiIn Stock: 904EMH2801-TL-H Datasheet
EMH2801-TL-H
Current Part
NTHD3101FT1G
onsemiIn Stock: 29205NTHD3101FT1G Datasheet
NTHD3101FT1G
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Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3 A
Rds On (Max) @ Id, Vgs 85 mOhm @ 1.5A, 4.5V
Power Dissipation (Max) 1 W
Gate Charge (Qg) (Max) @ Vgs 4 nC @ 4.5V
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the EMH2801-TL-H is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • FET Type: P-Channel topology must be maintained
  • Drain to Source Voltage (Vdss): Minimum 20V rating required
  • Continuous Drain Current (Id): Minimum 3A at 25°C required
  • On-State Resistance (Rds On): Must not exceed 85 mOhm at specified conditions
  • Power Dissipation: Minimum 1W capability required
  • Gate Charge (Qg): Lower values preferred for switching efficiency
  • Operating Temperature: Minimum 150°C junction temperature required

Mechanical Compatibility Criteria:

  • Mounting Type: Surface Mount required
  • Package Configuration: 8-SMD, Flat Lead required
  • Moisture Sensitivity Level: MSL 1 (Unlimited) required

The NTHD3101FT1G meets all substitution criteria with equivalent or superior electrical performance and identical mechanical packaging.

Parameter Comparison

Parameter EMH2801-TL-H NTHD3101FT1G Unit
Manufacturer onsemi onsemi
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 20 V
Current - Continuous Drain (Id) @ 25°C 3 3.2 A
Rds On (Max) @ Id, Vgs 85 mOhm @ 1.5A, 4.5V 80 mOhm @ 3.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs 4 7.4 nC @ 4.5V
Power Dissipation (Max) 1 1.1 W
Operating Temperature (TJ) 150 -55 ~ 150 °C
Mounting Type Surface Mount Surface Mount
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated)
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99

Engineering Selection Recommendations

The NTHD3101FT1G is a direct functional equivalent for the obsolete EMH2801-TL-H. Both devices are manufactured by onsemi and share identical electrical ratings for drain-to-source voltage, FET topology, and package configuration.

Substitution Basis:

The NTHD3101FT1G exceeds the minimum electrical requirements of the EMH2801-TL-H:

  • Continuous drain current is 3.2A versus 3A required
  • On-state resistance is 80 mOhm versus 85 mOhm maximum
  • Power dissipation capability is 1.1W versus 1W required
  • Operating temperature range extends to -55°C, providing enhanced low-temperature performance

Both parts maintain identical mechanical compatibility with 8-SMD flat lead surface mount packaging and MSL 1 moisture sensitivity classification. Both devices feature isolated Schottky diodes and are REACH unaffected with EAR99 ECCN classification.

The NTHD3101FT1G is available in Tape & Reel packaging with RoHS3 compliance, providing enhanced supply chain availability and regulatory alignment for new designs.

Frequently Asked Questions (FAQ)

Q: Can the NTHD3101FT1G directly replace the EMH2801-TL-H in existing designs?

A: Yes. Both devices share identical drain-to-source voltage ratings, P-Channel topology, and 8-SMD flat lead package configuration. The NTHD3101FT1G meets or exceeds all electrical specifications of the EMH2801-TL-H.

Q: What are the key differences between these two parts?

A: The NTHD3101FT1G provides higher continuous drain current (3.2A versus 3A), lower on-state resistance (80 mOhm versus 85 mOhm), and extended operating temperature range (-55°C to 150°C versus 150°C maximum). Gate charge is higher at 7.4 nC versus 4 nC, and input capacitance is higher at 680 pF versus 320 pF.

Q: Are the package dimensions identical?

A: Yes. Both parts use 8-SMD flat lead surface mount packaging with identical mechanical footprints and pin configurations.

Q: What is the significance of the higher gate charge in the NTHD3101FT1G?

A: Higher gate charge (7.4 nC versus 4 nC) requires additional driver current during switching transitions. This affects gate driver circuit design but does not prevent direct substitution in applications where the gate driver has sufficient current capability.

Q: Does the NTHD3101FT1G have better regulatory compliance?

A: The NTHD3101FT1G carries RoHS3 compliance certification, whereas the EMH2801-TL-H does not specify RoHS status. Both parts are REACH unaffected and carry EAR99 ECCN classification.

Q: What is the moisture sensitivity level for both parts?

A: Both the EMH2801-TL-H and NTHD3101FT1G are classified as MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage or handling.

Q: Can the NTHD3101FT1G be used in applications requiring the lower gate charge of the original part?

A: The NTHD3101FT1G has higher gate charge (7.4 nC versus 4 nC). Applications with marginal gate driver current capacity must verify that the driver can supply the additional charge without exceeding maximum current ratings.

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