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EMH2801-TL-H Equivalent & Substitute Parts
Part Overview
The EMH2801-TL-H is a P-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 3A continuous drain current at 25°C. This device features an isolated Schottky diode and is housed in an 8-SMD flat lead surface mount package. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | P-Channel | — |
| Drain to Source Voltage (Vdss) | 20 | V |
| Current - Continuous Drain (Id) @ 25°C | 3 | A |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 1.5A, 4.5V | — |
| Power Dissipation (Max) | 1 | W |
| Gate Charge (Qg) (Max) @ Vgs | 4 | nC @ 4.5V |
| Operating Temperature (TJ) | 150 | °C |
| Mounting Type | Surface Mount | — |
| Package / Case | 8-SMD, Flat Lead | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the EMH2801-TL-H is determined by the following critical electrical and mechanical parameters:
Electrical Compatibility Criteria:
- FET Type: P-Channel topology must be maintained
- Drain to Source Voltage (Vdss): Minimum 20V rating required
- Continuous Drain Current (Id): Minimum 3A at 25°C required
- On-State Resistance (Rds On): Must not exceed 85 mOhm at specified conditions
- Power Dissipation: Minimum 1W capability required
- Gate Charge (Qg): Lower values preferred for switching efficiency
- Operating Temperature: Minimum 150°C junction temperature required
Mechanical Compatibility Criteria:
- Mounting Type: Surface Mount required
- Package Configuration: 8-SMD, Flat Lead required
- Moisture Sensitivity Level: MSL 1 (Unlimited) required
The NTHD3101FT1G meets all substitution criteria with equivalent or superior electrical performance and identical mechanical packaging.
Parameter Comparison
| Parameter | EMH2801-TL-H | NTHD3101FT1G | Unit |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | — |
| FET Type | P-Channel | P-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 20 | 20 | V |
| Current - Continuous Drain (Id) @ 25°C | 3 | 3.2 | A |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 1.5A, 4.5V | 80 mOhm @ 3.2A, 4.5V | — |
| Gate Charge (Qg) (Max) @ Vgs | 4 | 7.4 | nC @ 4.5V |
| Power Dissipation (Max) | 1 | 1.1 | W |
| Operating Temperature (TJ) | 150 | -55 ~ 150 | °C |
| Mounting Type | Surface Mount | Surface Mount | — |
| Package / Case | 8-SMD, Flat Lead | 8-SMD, Flat Lead | — |
| FET Feature | Schottky Diode (Isolated) | Schottky Diode (Isolated) | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
| ECCN | EAR99 | EAR99 | — |
Engineering Selection Recommendations
The NTHD3101FT1G is a direct functional equivalent for the obsolete EMH2801-TL-H. Both devices are manufactured by onsemi and share identical electrical ratings for drain-to-source voltage, FET topology, and package configuration.
Substitution Basis:
The NTHD3101FT1G exceeds the minimum electrical requirements of the EMH2801-TL-H:
- Continuous drain current is 3.2A versus 3A required
- On-state resistance is 80 mOhm versus 85 mOhm maximum
- Power dissipation capability is 1.1W versus 1W required
- Operating temperature range extends to -55°C, providing enhanced low-temperature performance
Both parts maintain identical mechanical compatibility with 8-SMD flat lead surface mount packaging and MSL 1 moisture sensitivity classification. Both devices feature isolated Schottky diodes and are REACH unaffected with EAR99 ECCN classification.
The NTHD3101FT1G is available in Tape & Reel packaging with RoHS3 compliance, providing enhanced supply chain availability and regulatory alignment for new designs.
Frequently Asked Questions (FAQ)
Q: Can the NTHD3101FT1G directly replace the EMH2801-TL-H in existing designs?
A: Yes. Both devices share identical drain-to-source voltage ratings, P-Channel topology, and 8-SMD flat lead package configuration. The NTHD3101FT1G meets or exceeds all electrical specifications of the EMH2801-TL-H.
Q: What are the key differences between these two parts?
A: The NTHD3101FT1G provides higher continuous drain current (3.2A versus 3A), lower on-state resistance (80 mOhm versus 85 mOhm), and extended operating temperature range (-55°C to 150°C versus 150°C maximum). Gate charge is higher at 7.4 nC versus 4 nC, and input capacitance is higher at 680 pF versus 320 pF.
Q: Are the package dimensions identical?
A: Yes. Both parts use 8-SMD flat lead surface mount packaging with identical mechanical footprints and pin configurations.
Q: What is the significance of the higher gate charge in the NTHD3101FT1G?
A: Higher gate charge (7.4 nC versus 4 nC) requires additional driver current during switching transitions. This affects gate driver circuit design but does not prevent direct substitution in applications where the gate driver has sufficient current capability.
Q: Does the NTHD3101FT1G have better regulatory compliance?
A: The NTHD3101FT1G carries RoHS3 compliance certification, whereas the EMH2801-TL-H does not specify RoHS status. Both parts are REACH unaffected and carry EAR99 ECCN classification.
Q: What is the moisture sensitivity level for both parts?
A: Both the EMH2801-TL-H and NTHD3101FT1G are classified as MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage or handling.
Q: Can the NTHD3101FT1G be used in applications requiring the lower gate charge of the original part?
A: The NTHD3101FT1G has higher gate charge (7.4 nC versus 4 nC). Applications with marginal gate driver current capacity must verify that the driver can supply the additional charge without exceeding maximum current ratings.
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